JP2018067690A - 半導体装置とその製造方法 - Google Patents

半導体装置とその製造方法 Download PDF

Info

Publication number
JP2018067690A
JP2018067690A JP2016207266A JP2016207266A JP2018067690A JP 2018067690 A JP2018067690 A JP 2018067690A JP 2016207266 A JP2016207266 A JP 2016207266A JP 2016207266 A JP2016207266 A JP 2016207266A JP 2018067690 A JP2018067690 A JP 2018067690A
Authority
JP
Japan
Prior art keywords
region
semiconductor substrate
guard ring
concentration
outer peripheral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016207266A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018067690A5 (enExample
Inventor
金原　啓道
Hiromichi Kanehara
啓道 金原
侑佑 山下
Yusuke Yamashita
侑佑 山下
泰 浦上
Yasushi Uragami
泰 浦上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Toyota Motor Corp
Toyota Central R&D Labs Inc
Original Assignee
Denso Corp
Toyota Motor Corp
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp, Toyota Motor Corp, Toyota Central R&D Labs Inc filed Critical Denso Corp
Priority to JP2016207266A priority Critical patent/JP2018067690A/ja
Priority to PCT/IB2017/001168 priority patent/WO2018073638A1/en
Priority to CN201780062414.9A priority patent/CN109844954B/zh
Priority to US16/339,223 priority patent/US10985241B2/en
Publication of JP2018067690A publication Critical patent/JP2018067690A/ja
Publication of JP2018067690A5 publication Critical patent/JP2018067690A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2016207266A 2016-10-21 2016-10-21 半導体装置とその製造方法 Pending JP2018067690A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016207266A JP2018067690A (ja) 2016-10-21 2016-10-21 半導体装置とその製造方法
PCT/IB2017/001168 WO2018073638A1 (en) 2016-10-21 2017-09-26 Semiconductor device and production method thereof
CN201780062414.9A CN109844954B (zh) 2016-10-21 2017-09-26 半导体器件及其制造方法
US16/339,223 US10985241B2 (en) 2016-10-21 2017-09-26 Semiconductor device and production method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016207266A JP2018067690A (ja) 2016-10-21 2016-10-21 半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
JP2018067690A true JP2018067690A (ja) 2018-04-26
JP2018067690A5 JP2018067690A5 (enExample) 2019-06-13

Family

ID=60782249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016207266A Pending JP2018067690A (ja) 2016-10-21 2016-10-21 半導体装置とその製造方法

Country Status (4)

Country Link
US (1) US10985241B2 (enExample)
JP (1) JP2018067690A (enExample)
CN (1) CN109844954B (enExample)
WO (1) WO2018073638A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111162116A (zh) * 2018-10-19 2020-05-15 株式会社电装 半导体装置及其制造方法
JP2020119922A (ja) * 2019-01-18 2020-08-06 トヨタ自動車株式会社 半導体装置
JP2022044997A (ja) * 2020-09-08 2022-03-18 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2025104236A (ja) * 2023-12-27 2025-07-09 台亞半導體股▲フン▼有限公司 集積回路
US12426301B2 (en) 2022-03-15 2025-09-23 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing semiconductor device
WO2026094733A1 (ja) * 2024-10-28 2026-05-07 ローム株式会社 半導体装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7107284B2 (ja) * 2019-07-08 2022-07-27 株式会社デンソー 半導体装置とその製造方法
JP7605050B2 (ja) * 2021-07-06 2024-12-24 株式会社デンソー 半導体装置と半導体装置の製造方法
CN116525452A (zh) * 2023-06-06 2023-08-01 飞锃半导体（上海）有限公司 半导体结构及其形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094095A (ja) * 1999-09-21 2001-04-06 Denso Corp 炭化珪素半導体装置及びその製造方法
WO2011141981A1 (ja) * 2010-05-10 2011-11-17 株式会社日立製作所 半導体装置
WO2014054319A1 (ja) * 2012-10-02 2014-04-10 三菱電機株式会社 半導体装置およびその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0311816A1 (de) * 1987-10-15 1989-04-19 BBC Brown Boveri AG Halbleiterbauelement und Verfahren zu dessen Herstellung
JP2000114549A (ja) 1998-09-30 2000-04-21 Meidensha Corp 半導体素子
JP2005135972A (ja) 2003-10-28 2005-05-26 Shindengen Electric Mfg Co Ltd 半導体装置の製造方法
JP5358963B2 (ja) * 2008-02-04 2013-12-04 富士電機株式会社 半導体装置およびその製造方法
JP2009289904A (ja) * 2008-05-28 2009-12-10 Toshiba Corp 半導体装置
EP2341528A1 (en) * 2010-01-05 2011-07-06 ABB Technology AG Power Semiconductor Device and its manufacturing method
TWM410990U (en) * 2011-02-11 2011-09-01 Pynmax Technology Co Ltd High Antistatic capability schottky diode
US8937319B2 (en) * 2011-03-07 2015-01-20 Shindengen Electric Manufacturing Co., Ltd. Schottky barrier diode
JP5812029B2 (ja) * 2012-06-13 2015-11-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法
DE112013006681B4 (de) 2013-02-15 2022-01-20 Denso Corporation Halbleitervorrichtung
CN204257659U (zh) * 2014-12-19 2015-04-08 扬州国宇电子有限公司 一种半导体晶体管的终端隔离结构
JP2016201448A (ja) 2015-04-09 2016-12-01 トヨタ自動車株式会社 ダイオード及びダイオードの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094095A (ja) * 1999-09-21 2001-04-06 Denso Corp 炭化珪素半導体装置及びその製造方法
WO2011141981A1 (ja) * 2010-05-10 2011-11-17 株式会社日立製作所 半導体装置
WO2014054319A1 (ja) * 2012-10-02 2014-04-10 三菱電機株式会社 半導体装置およびその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111162116A (zh) * 2018-10-19 2020-05-15 株式会社电装 半导体装置及其制造方法
JP2020119922A (ja) * 2019-01-18 2020-08-06 トヨタ自動車株式会社 半導体装置
JP2022044997A (ja) * 2020-09-08 2022-03-18 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7635524B2 (ja) 2020-09-08 2025-02-26 富士電機株式会社 半導体装置および半導体装置の製造方法
US12426301B2 (en) 2022-03-15 2025-09-23 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing semiconductor device
JP2025104236A (ja) * 2023-12-27 2025-07-09 台亞半導體股▲フン▼有限公司 集積回路
JP7805413B2 (ja) 2023-12-27 2026-01-23 台亞半導體股▲フン▼有限公司 集積回路
WO2026094733A1 (ja) * 2024-10-28 2026-05-07 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
CN109844954B (zh) 2022-05-10
US20200044018A1 (en) 2020-02-06
CN109844954A (zh) 2019-06-04
WO2018073638A1 (en) 2018-04-26
US10985241B2 (en) 2021-04-20

Similar Documents

Publication Publication Date Title
CN109844954B (zh) 半导体器件及其制造方法
JP6728953B2 (ja) 半導体装置及びその製造方法
US8330185B2 (en) Semiconductor device having semiconductor substrate including diode region and IGBT region
JP2016201448A (ja) ダイオード及びダイオードの製造方法
JP2020077674A (ja) 半導体装置および製造方法
JP2008300506A (ja) ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置
US20220059657A1 (en) Silicon carbide semiconductor device and method for manufacturing the same
US11133406B2 (en) Semiconductor device
CN114072922B (zh) 半导体装置及其制造方法
JP5428435B2 (ja) ショットキーバリアダイオードを備えた半導体装置およびその製造方法
WO2014087499A1 (ja) 半導体装置
US10840386B2 (en) Semiconductor apparatus
JP6152861B2 (ja) ダイオードの製造方法
CN111162116A (zh) 半导体装置及其制造方法
KR101490937B1 (ko) 쇼트키 배리어 다이오드 및 그 제조 방법
WO2016114138A1 (ja) 半導体装置
JP2019096732A (ja) 半導体装置
JP2010135526A (ja) 半導体装置
JP2022100379A (ja) 半導体装置とその製造方法
JP2005229070A (ja) ショットキーバリアダイオードおよびその製造方法
JPH06283727A (ja) 電力用半導体素子
JP5230970B2 (ja) 半導体装置
JP2008227113A (ja) 半導体装置およびその製造方法
JP2022139144A (ja) 半導体装置
JP7852457B2 (ja) 半導体装置とその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190426

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190426

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200121

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200319

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200519

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20200611

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20200611

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20200915