JP2018010929A5 - - Google Patents

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JP2018010929A5
JP2018010929A5 JP2016137730A JP2016137730A JP2018010929A5 JP 2018010929 A5 JP2018010929 A5 JP 2018010929A5 JP 2016137730 A JP2016137730 A JP 2016137730A JP 2016137730 A JP2016137730 A JP 2016137730A JP 2018010929 A5 JP2018010929 A5 JP 2018010929A5
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Japan
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semiconductor
sic
semiconductor chip
semiconductor chips
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JP2016137730A
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Japanese (ja)
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JP2018010929A (ja
JP6759784B2 (ja
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Priority to JP2016137730A priority Critical patent/JP6759784B2/ja
Priority claimed from JP2016137730A external-priority patent/JP6759784B2/ja
Priority to US15/453,966 priority patent/US10727150B2/en
Priority to DE102017209119.3A priority patent/DE102017209119B4/de
Priority to CN201710565919.9A priority patent/CN107611111B/zh
Publication of JP2018010929A publication Critical patent/JP2018010929A/ja
Publication of JP2018010929A5 publication Critical patent/JP2018010929A5/ja
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JP2016137730A 2016-07-12 2016-07-12 半導体モジュール Active JP6759784B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016137730A JP6759784B2 (ja) 2016-07-12 2016-07-12 半導体モジュール
US15/453,966 US10727150B2 (en) 2016-07-12 2017-03-09 Semiconductor module and power converter
DE102017209119.3A DE102017209119B4 (de) 2016-07-12 2017-05-31 Halbleitermodul und Leistungswandler
CN201710565919.9A CN107611111B (zh) 2016-07-12 2017-07-12 半导体模块、电力转换装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016137730A JP6759784B2 (ja) 2016-07-12 2016-07-12 半導体モジュール

Publications (3)

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JP2018010929A JP2018010929A (ja) 2018-01-18
JP2018010929A5 true JP2018010929A5 (enExample) 2019-01-10
JP6759784B2 JP6759784B2 (ja) 2020-09-23

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JP2016137730A Active JP6759784B2 (ja) 2016-07-12 2016-07-12 半導体モジュール

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US (1) US10727150B2 (enExample)
JP (1) JP6759784B2 (enExample)
CN (1) CN107611111B (enExample)
DE (1) DE102017209119B4 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021049039A1 (ja) * 2019-09-13 2021-03-18 株式会社デンソー 半導体装置
KR102122210B1 (ko) * 2019-10-18 2020-06-12 제엠제코(주) 방열 기판, 그 제조 방법, 그리고 이를 포함하는 반도체 패키지
WO2021079462A1 (ja) * 2019-10-24 2021-04-29 三菱電機株式会社 熱電変換素子モジュールおよび熱電変換素子モジュールの製造方法
JP7178980B2 (ja) * 2019-10-30 2022-11-28 三菱電機株式会社 半導体装置
JP7570298B2 (ja) * 2021-07-26 2024-10-21 三菱電機株式会社 半導体装置
KR20240003596A (ko) * 2022-07-01 2024-01-09 현대자동차주식회사 파워 모듈
CN117650105B (zh) * 2023-12-05 2025-07-25 上海狮门半导体有限公司 一种功率模块及功率模块组装方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE378800T1 (de) * 1999-05-28 2007-11-15 Denki Kagaku Kogyo Kk Schaltungskeramiksubstrat und sein herstellungsverfahren
TW512653B (en) * 1999-11-26 2002-12-01 Ibiden Co Ltd Multilayer circuit board and semiconductor device
JP2001284513A (ja) * 2000-03-29 2001-10-12 Mitsubishi Electric Corp パワー半導体装置
JP2001358263A (ja) * 2000-06-12 2001-12-26 Hitachi Ltd 半導体装置およびその回路形成方法
JP3926141B2 (ja) * 2000-12-27 2007-06-06 日本特殊陶業株式会社 配線基板
US7800222B2 (en) 2007-11-29 2010-09-21 Infineon Technologies Ag Semiconductor module with switching components and driver electronics
US8304660B2 (en) * 2008-02-07 2012-11-06 National Taiwan University Fully reflective and highly thermoconductive electronic module and method of manufacturing the same
JP5434914B2 (ja) 2008-06-12 2014-03-05 株式会社安川電機 パワーモジュールおよびその制御方法
EP2518190A1 (en) * 2009-12-25 2012-10-31 FUJIFILM Corporation Insulated substrate, process for production of insulated substrate, process for formation of wiring line, wiring substrate, and light-emitting element
JP5213884B2 (ja) 2010-01-27 2013-06-19 三菱電機株式会社 半導体装置モジュール
DE112011103926B4 (de) 2010-11-25 2018-03-08 Mitsubishi Electric Corporation Halbleitervorrichtung
JP5626087B2 (ja) * 2011-04-13 2014-11-19 三菱電機株式会社 半導体装置
WO2012157583A1 (ja) * 2011-05-13 2012-11-22 富士電機株式会社 半導体装置とその製造方法
US8963321B2 (en) * 2011-09-12 2015-02-24 Infineon Technologies Ag Semiconductor device including cladded base plate
JP5887901B2 (ja) * 2011-12-14 2016-03-16 富士電機株式会社 半導体装置及び半導体装置の製造方法
US10122293B2 (en) 2012-01-17 2018-11-06 Infineon Technologies Americas Corp. Power module package having a multi-phase inverter and power factor correction
JP5966504B2 (ja) * 2012-03-28 2016-08-10 三菱マテリアル株式会社 はんだ接合構造、パワーモジュール、ヒートシンク付パワーモジュール用基板、並びに、はんだ接合構造の製造方法、パワーモジュールの製造方法、ヒートシンク付パワーモジュール用基板の製造方法
JP6044097B2 (ja) * 2012-03-30 2016-12-14 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板、冷却器付パワーモジュール用基板及びパワーモジュール
WO2013175714A1 (ja) * 2012-05-22 2013-11-28 パナソニック株式会社 半導体装置及びその製造方法
US9196604B2 (en) * 2012-07-19 2015-11-24 Mitsubishi Electric Corporation Power semiconductor module having pattern laminated region
WO2014030659A1 (ja) * 2012-08-23 2014-02-27 日産自動車株式会社 絶縁基板、多層セラミック絶縁基板、パワー半導体装置と絶縁基板の接合構造体、及びパワー半導体モジュール
EP4293714A3 (en) * 2012-09-20 2024-02-28 Rohm Co., Ltd. Power semiconductor device module
JP6102171B2 (ja) 2012-10-17 2017-03-29 富士電機株式会社 炭化珪素ｍｏｓ型半導体装置の製造方法
JP2014130875A (ja) 2012-12-28 2014-07-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
TWI478479B (zh) * 2013-01-17 2015-03-21 台達電子工業股份有限公司 整合功率模組封裝結構
JP5975911B2 (ja) * 2013-03-15 2016-08-23 ルネサスエレクトロニクス株式会社 半導体装置
JP6265693B2 (ja) 2013-11-12 2018-01-24 三菱電機株式会社 半導体装置およびその製造方法
JP6129090B2 (ja) 2014-01-30 2017-05-17 三菱電機株式会社 パワーモジュール及びパワーモジュールの製造方法
TWI560829B (en) * 2014-03-07 2016-12-01 Xintec Inc Chip package and method thereof
JP2015220295A (ja) 2014-05-15 2015-12-07 三菱電機株式会社 パワーモジュール及びその製造方法
CN105765716B (zh) * 2014-05-15 2018-06-22 富士电机株式会社 功率半导体模块和复合模块
WO2015178296A1 (ja) * 2014-05-20 2015-11-26 三菱電機株式会社 電力用半導体装置

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