DE102017209119B4 - Halbleitermodul und Leistungswandler - Google Patents

Halbleitermodul und Leistungswandler Download PDF

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Publication number
DE102017209119B4
DE102017209119B4 DE102017209119.3A DE102017209119A DE102017209119B4 DE 102017209119 B4 DE102017209119 B4 DE 102017209119B4 DE 102017209119 A DE102017209119 A DE 102017209119A DE 102017209119 B4 DE102017209119 B4 DE 102017209119B4
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Prior art keywords
semiconductor chip
insulating layer
metal
semiconductor
equal
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DE102017209119.3A
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German (de)
English (en)
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DE102017209119A1 (de
Inventor
Haruhiko Murakami
Rei YONEYAMA
Takami Otsuki
Akihiko Yamashita
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/136—Containers comprising a conductive base serving as an interconnection having other interconnections perpendicular to the conductive base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/755—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent insulating package substrate, interpose or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
DE102017209119.3A 2016-07-12 2017-05-31 Halbleitermodul und Leistungswandler Active DE102017209119B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-137730 2016-07-12
JP2016137730A JP6759784B2 (ja) 2016-07-12 2016-07-12 半導体モジュール

Publications (2)

Publication Number Publication Date
DE102017209119A1 DE102017209119A1 (de) 2018-01-18
DE102017209119B4 true DE102017209119B4 (de) 2024-02-22

Family

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Family Applications (1)

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DE102017209119.3A Active DE102017209119B4 (de) 2016-07-12 2017-05-31 Halbleitermodul und Leistungswandler

Country Status (4)

Country Link
US (1) US10727150B2 (enExample)
JP (1) JP6759784B2 (enExample)
CN (1) CN107611111B (enExample)
DE (1) DE102017209119B4 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7248133B2 (ja) * 2019-09-13 2023-03-29 株式会社デンソー 半導体装置
KR102122210B1 (ko) * 2019-10-18 2020-06-12 제엠제코(주) 방열 기판, 그 제조 방법, 그리고 이를 포함하는 반도체 패키지
WO2021079462A1 (ja) * 2019-10-24 2021-04-29 三菱電機株式会社 熱電変換素子モジュールおよび熱電変換素子モジュールの製造方法
JP7178980B2 (ja) * 2019-10-30 2022-11-28 三菱電機株式会社 半導体装置
JP7570298B2 (ja) * 2021-07-26 2024-10-21 三菱電機株式会社 半導体装置
JP7707885B2 (ja) * 2021-12-13 2025-07-15 三菱電機株式会社 半導体装置
KR20240003596A (ko) * 2022-07-01 2024-01-09 현대자동차주식회사 파워 모듈
CN117650105B (zh) * 2023-12-05 2025-07-25 上海狮门半导体有限公司 一种功率模块及功率模块组装方法

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US20020037435A1 (en) * 1999-05-28 2002-03-28 Denki Kagaku Kogyo Kabushiki Kaisha Circuit substrate
DE102008052029A1 (de) * 2007-11-29 2009-06-18 Infineon Technologies Ag Halbleitermodul mit Schaltbauteilen und Treiberelektronik
US20110057713A1 (en) * 2008-06-12 2011-03-10 Kabushiki Kaisha Yaskawa Denki Power module
US20110180809A1 (en) 2010-01-27 2011-07-28 Mitsubishi Electric Corporation Semiconductor device module
US20130182470A1 (en) * 2012-01-17 2013-07-18 International Rectifier Corporation Power Module Package Having a Multi-Phase Inverter and Power Factor Correction
US20130240909A1 (en) 2010-11-25 2013-09-19 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing semiconductor device
JP2014082361A (ja) 2012-10-17 2014-05-08 Fuji Electric Co Ltd 炭化珪素ｍｏｓ型半導体装置の製造方法
JP2014130875A (ja) 2012-12-28 2014-07-10 Mitsubishi Electric Corp 半導体装置およびその製造方法

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JP2001358263A (ja) * 2000-06-12 2001-12-26 Hitachi Ltd 半導体装置およびその回路形成方法
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JP5975911B2 (ja) * 2013-03-15 2016-08-23 ルネサスエレクトロニクス株式会社 半導体装置
JP6265693B2 (ja) * 2013-11-12 2018-01-24 三菱電機株式会社 半導体装置およびその製造方法
JP6129090B2 (ja) 2014-01-30 2017-05-17 三菱電機株式会社 パワーモジュール及びパワーモジュールの製造方法
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JP2015220295A (ja) 2014-05-15 2015-12-07 三菱電機株式会社 パワーモジュール及びその製造方法
CN105765716B (zh) * 2014-05-15 2018-06-22 富士电机株式会社 功率半导体模块和复合模块
CN106104779B (zh) * 2014-05-20 2019-05-10 三菱电机株式会社 功率用半导体装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020037435A1 (en) * 1999-05-28 2002-03-28 Denki Kagaku Kogyo Kabushiki Kaisha Circuit substrate
DE102008052029A1 (de) * 2007-11-29 2009-06-18 Infineon Technologies Ag Halbleitermodul mit Schaltbauteilen und Treiberelektronik
US20110057713A1 (en) * 2008-06-12 2011-03-10 Kabushiki Kaisha Yaskawa Denki Power module
US20110180809A1 (en) 2010-01-27 2011-07-28 Mitsubishi Electric Corporation Semiconductor device module
US20130240909A1 (en) 2010-11-25 2013-09-19 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing semiconductor device
US20130182470A1 (en) * 2012-01-17 2013-07-18 International Rectifier Corporation Power Module Package Having a Multi-Phase Inverter and Power Factor Correction
JP2014082361A (ja) 2012-10-17 2014-05-08 Fuji Electric Co Ltd 炭化珪素ｍｏｓ型半導体装置の製造方法
JP2014130875A (ja) 2012-12-28 2014-07-10 Mitsubishi Electric Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
CN107611111A (zh) 2018-01-19
JP2018010929A (ja) 2018-01-18
JP6759784B2 (ja) 2020-09-23
DE102017209119A1 (de) 2018-01-18
US10727150B2 (en) 2020-07-28
US20180019180A1 (en) 2018-01-18
CN107611111B (zh) 2021-09-07

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