JP1696315S - 電力用半導体素子 - Google Patents

電力用半導体素子

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Publication number
JP1696315S
JP1696315S JP2021006002F JP2021006002F JP1696315S JP 1696315 S JP1696315 S JP 1696315S JP 2021006002 F JP2021006002 F JP 2021006002F JP 2021006002 F JP2021006002 F JP 2021006002F JP 1696315 S JP1696315 S JP 1696315S
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JP
Japan
Prior art keywords
power semiconductor
semiconductor device
semiconductor layer
electrode
gate electrode
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JP2021006002F
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English (en)
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Priority to JP2021006002F priority Critical patent/JP1696315S/ja
Priority to US29/808,484 priority patent/USD994624S1/en
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Abstract

この意匠に係る物品は、平面側にソース電極およびゲート電極を配置し、底面側にドレイン電極を配置した縦型構造のトランジスタとして用いられる電力用半導体素子である。半導体層には例えばＳｉＣ（炭化珪素）を用いることができ、ソース電極、ゲート電極それぞれの周囲にモールド部が配置されていることにより薄型かつ信頼性の高いものとすることができる。
JP2021006002F 2021-03-23 2021-03-23 電力用半導体素子 Active JP1696315S (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021006002F JP1696315S (ja) 2021-03-23 2021-03-23 電力用半導体素子
US29/808,484 USD994624S1 (en) 2021-03-23 2021-09-20 Power semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021006002F JP1696315S (ja) 2021-03-23 2021-03-23 電力用半導体素子

Publications (1)

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JP1696315S true JP1696315S (ja) 2021-10-04

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ID=83402304

Family Applications (1)

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JP2021006002F Active JP1696315S (ja) 2021-03-23 2021-03-23 電力用半導体素子

Country Status (2)

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US (1) USD994624S1 (ja)
JP (1) JP1696315S (ja)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3352726A (en) * 1964-04-13 1967-11-14 Philco Ford Corp Method of fabricating planar semiconductor devices
US7638888B2 (en) * 2007-02-16 2009-12-29 Panasonic Corporation Semiconductor chip mounting substrate, semiconductor chip mounting body, semiconductor chip stacked module, and semiconductor chip mounting substrate manufacturing method
USD642996S1 (en) * 2010-04-09 2011-08-09 Panasonic Electric Works Co., Ltd. Electroluminescence apparatus
USD701843S1 (en) * 2010-12-28 2014-04-01 Sumitomo Electric Industries, Ltd. Semiconductor device
JP1438220S (ja) * 2011-02-04 2015-04-06
JP1463922S (ja) * 2012-05-02 2016-02-29
JP1580899S (ja) * 2016-11-15 2017-07-10
CN110383439B (zh) * 2017-03-08 2023-04-28 三菱电机株式会社 半导体装置、其制造方法以及半导体模块
US10262928B2 (en) * 2017-03-23 2019-04-16 Rohm Co., Ltd. Semiconductor device
JP2019075411A (ja) * 2017-10-12 2019-05-16 株式会社日立製作所 炭化ケイ素半導体装置、パワーモジュールおよび電力変換装置
JP1664282S (ja) 2019-07-24 2020-07-27
JP2021141175A (ja) * 2020-03-04 2021-09-16 ローム株式会社 半導体装置
JP7394038B2 (ja) * 2020-09-11 2023-12-07 株式会社東芝 半導体装置

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USD994624S1 (en) 2023-08-08

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