JP1696315S - 電力用半導体素子 - Google Patents
電力用半導体素子Info
- Publication number
- JP1696315S JP1696315S JP2021006002F JP2021006002F JP1696315S JP 1696315 S JP1696315 S JP 1696315S JP 2021006002 F JP2021006002 F JP 2021006002F JP 2021006002 F JP2021006002 F JP 2021006002F JP 1696315 S JP1696315 S JP 1696315S
- Authority
- JP
- Japan
- Prior art keywords
- power semiconductor
- semiconductor device
- semiconductor layer
- electrode
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
Abstract
この意匠に係る物品は、平面側にソース電極およびゲート電極を配置し、底面側にドレイン電極を配置した縦型構造のトランジスタとして用いられる電力用半導体素子である。半導体層には例えばＳｉＣ（炭化珪素）を用いることができ、ソース電極、ゲート電極それぞれの周囲にモールド部が配置されていることにより薄型かつ信頼性の高いものとすることができる。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021006002F JP1696315S (ja) | 2021-03-23 | 2021-03-23 | 電力用半導体素子 |
| US29/808,484 USD994624S1 (en) | 2021-03-23 | 2021-09-20 | Power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021006002F JP1696315S (ja) | 2021-03-23 | 2021-03-23 | 電力用半導体素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP1696315S true JP1696315S (ja) | 2021-10-04 |
Family
ID=83402304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021006002F Active JP1696315S (ja) | 2021-03-23 | 2021-03-23 | 電力用半導体素子 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | USD994624S1 (ja) |
| JP (1) | JP1696315S (ja) |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3352726A (en) * | 1964-04-13 | 1967-11-14 | Philco Ford Corp | Method of fabricating planar semiconductor devices |
| US7638888B2 (en) * | 2007-02-16 | 2009-12-29 | Panasonic Corporation | Semiconductor chip mounting substrate, semiconductor chip mounting body, semiconductor chip stacked module, and semiconductor chip mounting substrate manufacturing method |
| USD642996S1 (en) * | 2010-04-09 | 2011-08-09 | Panasonic Electric Works Co., Ltd. | Electroluminescence apparatus |
| USD701843S1 (en) * | 2010-12-28 | 2014-04-01 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
| JP1438220S (ja) * | 2011-02-04 | 2015-04-06 | ||
| JP1463922S (ja) * | 2012-05-02 | 2016-02-29 | ||
| JP1580899S (ja) * | 2016-11-15 | 2017-07-10 | ||
| DE112018001239T5 (de) * | 2017-03-08 | 2019-12-12 | Mitsubishi Electric Corporation | Halbleiterbauelement, verfahren zur herstellung desselben und halbleitermodul |
| US10262928B2 (en) * | 2017-03-23 | 2019-04-16 | Rohm Co., Ltd. | Semiconductor device |
| JP2019075411A (ja) * | 2017-10-12 | 2019-05-16 | 株式会社日立製作所 | 炭化ケイ素半導体装置、パワーモジュールおよび電力変換装置 |
| JP1664282S (ja) | 2019-07-24 | 2020-07-27 | ||
| JP7526010B2 (ja) * | 2020-03-04 | 2024-07-31 | ローム株式会社 | 半導体装置 |
| JP7394038B2 (ja) * | 2020-09-11 | 2023-12-07 | 株式会社東芝 | 半導体装置 |
-
2021
- 2021-03-23 JP JP2021006002F patent/JP1696315S/ja active Active
- 2021-09-20 US US29/808,484 patent/USD994624S1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| USD994624S1 (en) | 2023-08-08 |
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