DE112020001384A5 - Strahlungsemittierender halbleiterchip und strahlungsemittierendes halbleiterbauelement - Google Patents
Strahlungsemittierender halbleiterchip und strahlungsemittierendes halbleiterbauelement Download PDFInfo
- Publication number
- DE112020001384A5 DE112020001384A5 DE112020001384.7T DE112020001384T DE112020001384A5 DE 112020001384 A5 DE112020001384 A5 DE 112020001384A5 DE 112020001384 T DE112020001384 T DE 112020001384T DE 112020001384 A5 DE112020001384 A5 DE 112020001384A5
- Authority
- DE
- Germany
- Prior art keywords
- radiation
- emitting semiconductor
- semiconductor chip
- semiconductor component
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0239—Combinations of electrical or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06704—Housings; Packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
- H01S5/1085—Oblique facets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102019106805.3 | 2019-03-18 | ||
DE102019106805.3A DE102019106805A1 (de) | 2019-03-18 | 2019-03-18 | Strahlungsemittierender halbleiterchip und strahlungsemittierendes halbleiterbauelement |
PCT/EP2020/055693 WO2020187570A1 (de) | 2019-03-18 | 2020-03-04 | Strahlungsemittierender halbleiterchip und strahlungsemittierendes halbleiterbauelement |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112020001384A5 true DE112020001384A5 (de) | 2021-12-02 |
Family
ID=69810797
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102019106805.3A Withdrawn DE102019106805A1 (de) | 2019-03-18 | 2019-03-18 | Strahlungsemittierender halbleiterchip und strahlungsemittierendes halbleiterbauelement |
DE112020001384.7T Pending DE112020001384A5 (de) | 2019-03-18 | 2020-03-04 | Strahlungsemittierender halbleiterchip und strahlungsemittierendes halbleiterbauelement |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102019106805.3A Withdrawn DE102019106805A1 (de) | 2019-03-18 | 2019-03-18 | Strahlungsemittierender halbleiterchip und strahlungsemittierendes halbleiterbauelement |
Country Status (4)
Country | Link |
---|---|
US (1) | US11948966B2 (de) |
CN (1) | CN113646892A (de) |
DE (2) | DE102019106805A1 (de) |
WO (1) | WO2020187570A1 (de) |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4942366A (en) * | 1989-03-21 | 1990-07-17 | General Electric Company | Amplifier device with coupled surface emitting grating |
JPH09281420A (ja) | 1996-04-10 | 1997-10-31 | Minolta Co Ltd | レーザビーム走査光学装置 |
US20050180482A1 (en) * | 2004-01-23 | 2005-08-18 | Osowski Mark L. | Very low cost surface emitting laser diode arrays |
DE102006002275A1 (de) | 2005-01-19 | 2006-07-20 | Osram Opto Semiconductors Gmbh | Beleuchtungseinrichtung |
US20080198890A1 (en) * | 2007-02-21 | 2008-08-21 | Ungar Jeffrey E | Vertically emitting laser and method of making the same |
US8351020B2 (en) | 2008-11-26 | 2013-01-08 | Micronic Laser Systems | Image reading and writing using a complex two-dimensional interlace scheme |
DE102008061152B4 (de) | 2008-12-09 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
DE102008064073A1 (de) | 2008-12-19 | 2010-06-24 | Osram Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Mehrzahl von LED-Beleuchtungsvorrichtungen und LED-Beleuchtungsvorrichtung |
MX2011009327A (es) * | 2009-03-05 | 2012-01-20 | Pressco Tech Inc | Inyeccion digital de calor por medio de dispositivos semiconductores de emision de superficie. |
DE102014112562A1 (de) * | 2014-09-01 | 2016-03-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
JP6444754B2 (ja) * | 2015-02-05 | 2018-12-26 | 日亜化学工業株式会社 | 発光装置 |
AU2016298390B2 (en) | 2015-07-30 | 2021-09-02 | Optipulse Inc. | Rigid high power and high speed lasing grid structures |
DE102017117135A1 (de) | 2017-07-28 | 2019-01-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl von Laserdioden und Laserdiode |
-
2019
- 2019-03-18 DE DE102019106805.3A patent/DE102019106805A1/de not_active Withdrawn
-
2020
- 2020-03-04 WO PCT/EP2020/055693 patent/WO2020187570A1/de active Application Filing
- 2020-03-04 US US17/434,511 patent/US11948966B2/en active Active
- 2020-03-04 CN CN202080022609.2A patent/CN113646892A/zh active Pending
- 2020-03-04 DE DE112020001384.7T patent/DE112020001384A5/de active Pending
Also Published As
Publication number | Publication date |
---|---|
US20220130893A1 (en) | 2022-04-28 |
CN113646892A (zh) | 2021-11-12 |
WO2020187570A1 (de) | 2020-09-24 |
US11948966B2 (en) | 2024-04-02 |
DE102019106805A1 (de) | 2020-09-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R012 | Request for examination validly filed |