DE112017001125A5 - Optoelektronische Leuchtvorrichtung, Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Leuchtsystem - Google Patents

Optoelektronische Leuchtvorrichtung, Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Leuchtsystem Download PDF

Info

Publication number
DE112017001125A5
DE112017001125A5 DE112017001125.6T DE112017001125T DE112017001125A5 DE 112017001125 A5 DE112017001125 A5 DE 112017001125A5 DE 112017001125 T DE112017001125 T DE 112017001125T DE 112017001125 A5 DE112017001125 A5 DE 112017001125A5
Authority
DE
Germany
Prior art keywords
optoelectronic
carrier
semiconductor chip
lighting device
optoelectronic lighting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112017001125.6T
Other languages
English (en)
Other versions
DE112017001125B4 (de
Inventor
Christoph Eichler
Sven Gerhard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112017001125A5 publication Critical patent/DE112017001125A5/de
Application granted granted Critical
Publication of DE112017001125B4 publication Critical patent/DE112017001125B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)
DE112017001125.6T 2016-03-03 2017-03-03 Optoelektronische Leuchtvorrichtung, Herstellungsverfahren und optoelektronisches Leuchtsystem Active DE112017001125B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102016103862.8 2016-03-03
DE102016103862.8A DE102016103862A1 (de) 2016-03-03 2016-03-03 Optoelektronische Leuchtvorrichtung, Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Leuchtsystem
PCT/EP2017/055008 WO2017149121A1 (de) 2016-03-03 2017-03-03 Optoelektronische leuchtvorrichtung, träger für einen optoelektronischen halbleiterchip und optoelektronisches leuchtsystem

Publications (2)

Publication Number Publication Date
DE112017001125A5 true DE112017001125A5 (de) 2018-11-15
DE112017001125B4 DE112017001125B4 (de) 2022-10-13

Family

ID=58213090

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102016103862.8A Withdrawn DE102016103862A1 (de) 2016-03-03 2016-03-03 Optoelektronische Leuchtvorrichtung, Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Leuchtsystem
DE112017001125.6T Active DE112017001125B4 (de) 2016-03-03 2017-03-03 Optoelektronische Leuchtvorrichtung, Herstellungsverfahren und optoelektronisches Leuchtsystem

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102016103862.8A Withdrawn DE102016103862A1 (de) 2016-03-03 2016-03-03 Optoelektronische Leuchtvorrichtung, Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Leuchtsystem

Country Status (4)

Country Link
US (1) US10833475B2 (de)
CN (1) CN109075233B (de)
DE (2) DE102016103862A1 (de)
WO (1) WO2017149121A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019106546A1 (de) * 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil
CN112825414A (zh) * 2019-11-20 2021-05-21 瑞识科技（深圳）有限公司 一种vcsel激光器件及其制作方法
CN112993121A (zh) * 2020-08-25 2021-06-18 重庆康佳光电技术研究院有限公司 芯片键合方法和微型发光二极管显示器
JP2023107471A (ja) * 2022-01-24 2023-08-03 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置及び半導体レーザ素子の製造方法
WO2023162463A1 (ja) * 2022-02-22 2023-08-31 ソニーセミコンダクタソリューションズ株式会社 発光デバイスおよびＶｏＳ（ＶＣＳＥＬ ｏｎ Ｓｉｌｉｃｏｎ）デバイス
JP2023143314A (ja) * 2022-03-25 2023-10-06 ヌヴォトンテクノロジージャパン株式会社 半導体発光装置、基台、半田付き基台、及び、半導体発光装置の製造方法
CN115632304A (zh) * 2022-09-30 2023-01-20 青岛海信激光显示股份有限公司 发光芯片和激光器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644800A (en) 1969-08-04 1972-02-22 Tokyo Shibaura Electric Co Semiconductor-controlled rectifying device
US5305340A (en) * 1992-12-16 1994-04-19 International Business Machines Corporation Waveguide ridge laser device with improved mounting and ridge protection
US6075800A (en) * 1998-05-05 2000-06-13 Nortel Networks Corporation Bonding ridge structure laser diodes to substrates
JP2005223070A (ja) * 2004-02-04 2005-08-18 Toshiba Corp 半導体発光素子及び半導体発光装置
DE102007053849A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Anordnung umfassend ein optoelektronisches Bauelement
CN101226906A (zh) 2008-02-15 2008-07-23 日月光半导体制造股份有限公司 具有拦坝的芯片承载器
DE102009005709A1 (de) * 2009-01-22 2010-07-29 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
US8564954B2 (en) * 2010-06-15 2013-10-22 Chipmos Technologies Inc. Thermally enhanced electronic package
DE102010025320B4 (de) 2010-06-28 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102010027313A1 (de) * 2010-07-16 2012-01-19 Osram Opto Semiconductors Gmbh Trägervorrichtung für einen Halbleiterchip, elektronisches Bauelement mit einer Trägervorrichtung und optoelektronisches Bauelement mit einer Trägervorrichtung
DE102013212928A1 (de) * 2013-07-03 2015-01-08 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements
CN104347553A (zh) * 2013-07-23 2015-02-11 西安永电电气有限责任公司 一种挖槽阻焊型igbt模块底板
DE102014106074A1 (de) * 2014-04-30 2015-11-19 Osram Opto Semiconductors Gmbh Leuchtvorrichtung und Verfahren zum Herstellen einer Leuchtvorrichtung
DE102014107385A1 (de) 2014-05-26 2015-11-26 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
DE102016103862A1 (de) 2017-09-07
DE112017001125B4 (de) 2022-10-13
US20190089125A1 (en) 2019-03-21
WO2017149121A1 (de) 2017-09-08
CN109075233B (zh) 2023-04-04
CN109075233A (zh) 2018-12-21
US10833475B2 (en) 2020-11-10

Similar Documents

Publication Publication Date Title
DE112017001125A5 (de) Optoelektronische Leuchtvorrichtung, Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Leuchtsystem
JP2019004144A5 (ja) 半導体デバイス
DE112018004026A5 (de) Lagetoleranzunempfindliches kontaktierungsmodul zur kontaktierung optoelektronischer chips
DE112015004033A5 (de) Optoelektronisches Halbleiterbauteil und Blitzlicht
EP3312878A4 (de) Halbleiterbauelement, chipmodul und halbleitermodul
DE112017003450A5 (de) Strahlungsemittierender Halbleiterchip
DE112017007068T8 (de) Halbleitervorrichtung
JP2017199900A5 (ja) 半導体装置の作製方法
DE112015002479A5 (de) Halbleiterbauelement und Beleuchtungsvorrichtung
DE102018212047A8 (de) Halbleitermodul
DE112019001354A5 (de) Optoelektronischer halbleiterchip
EP3125285A4 (de) Pad-array-struktur auf einem substrat zur montage eines ic-chips auf einem substrat und optisches modul mit dieser pad-array-struktur
BR112016001171A2 (pt) módulo semicondutor.
DE112015002796A5 (de) Optoelektronischer Halbleiterchip
DE112018000553A5 (de) Optoelektronischer Halbleiterchip
EP3364465A4 (de) Halbleiterbauelement, halbleiterbauelementgehäuse und beleuchtungssystem damit
DE112018002064A5 (de) Optoelektronisches Halbleiterbauteil und Betriebsverfahren für ein optoelektronisches Halbleiterbauteil
DE112014002623A5 (de) Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil
JPWO2019197946A5 (ja) 半導体装置
DK3284976T3 (da) Planetbærer
DE112017004053A5 (de) Optoelektronischer Halbleiterchip
DE102017110821A8 (de) Halbleitervorrichtung
DE112014003318A5 (de) Optoelektronischer Halbleiterchip
DE112016001422A5 (de) Optoelektronischer Halbleiterchip
DE112014000439A5 (de) Optoelektronischer Halbleiterchip

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final