DE112022001530A5 - Halbleiterchip und bauelement - Google Patents

Halbleiterchip und bauelement Download PDF

Info

Publication number
DE112022001530A5
DE112022001530A5 DE112022001530.6T DE112022001530T DE112022001530A5 DE 112022001530 A5 DE112022001530 A5 DE 112022001530A5 DE 112022001530 T DE112022001530 T DE 112022001530T DE 112022001530 A5 DE112022001530 A5 DE 112022001530A5
Authority
DE
Germany
Prior art keywords
component
semiconductor chip
chip
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022001530.6T
Other languages
English (en)
Inventor
Jörg Erich Sorg
Erik Heinemann
André Somers
Thomas Kippes
Sebastian Schlegl
Matthias Heidemann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Ams Osram International GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102021123015.2A external-priority patent/DE102021123015A1/de
Application filed by Ams Osram International GmbH filed Critical Ams Osram International GmbH
Publication of DE112022001530A5 publication Critical patent/DE112022001530A5/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE112022001530.6T 2021-06-11 2022-06-09 Halbleiterchip und bauelement Pending DE112022001530A5 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102021115231.3 2021-06-11
DE102021115231 2021-06-11
DE102021123015.2 2021-09-06
DE102021123015.2A DE102021123015A1 (de) 2021-06-11 2021-09-06 Halbleiterchip und bauelement
PCT/EP2022/065697 WO2022258756A1 (de) 2021-06-11 2022-06-09 Halbleiterchip und bauelement

Publications (1)

Publication Number Publication Date
DE112022001530A5 true DE112022001530A5 (de) 2023-12-28

Family

ID=82321650

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022001530.6T Pending DE112022001530A5 (de) 2021-06-11 2022-06-09 Halbleiterchip und bauelement

Country Status (2)

Country Link
DE (1) DE112022001530A5 (de)
WO (1) WO2022258756A1 (de)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4461007A (en) * 1982-01-08 1984-07-17 Xerox Corporation Injection lasers with short active regions
JP4189610B2 (ja) * 1998-05-08 2008-12-03 ソニー株式会社 光電変換素子およびその製造方法
JP2003069152A (ja) * 2001-06-15 2003-03-07 Sony Corp マルチビーム半導体レーザ素子
US7310358B2 (en) * 2004-12-17 2007-12-18 Palo Alto Research Center Incorporated Semiconductor lasers
DE102017109812A1 (de) * 2016-05-13 2017-11-16 Osram Opto Semiconductors Gmbh Licht emittierender Halbleiterchip und Verfahren zur Herstellung eines Licht emittierenden Halbleiterchips

Also Published As

Publication number Publication date
WO2022258756A8 (de) 2023-11-09
WO2022258756A1 (de) 2022-12-15
WO2022258756A9 (de) 2023-04-13

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Legal Events

Date Code Title Description
R012 Request for examination validly filed