JP2018006525A5 - - Google Patents

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Publication number
JP2018006525A5
JP2018006525A5 JP2016130389A JP2016130389A JP2018006525A5 JP 2018006525 A5 JP2018006525 A5 JP 2018006525A5 JP 2016130389 A JP2016130389 A JP 2016130389A JP 2016130389 A JP2016130389 A JP 2016130389A JP 2018006525 A5 JP2018006525 A5 JP 2018006525A5
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JP
Japan
Prior art keywords
reference potential
bit line
vpp1
semiconductor region
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2016130389A
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English (en)
Japanese (ja)
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JP2018006525A (ja
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Publication date
Application filed filed Critical
Priority to JP2016130389A priority Critical patent/JP2018006525A/ja
Priority claimed from JP2016130389A external-priority patent/JP2018006525A/ja
Priority to CN201710386693.6A priority patent/CN107564886A/zh
Priority to TW106119383A priority patent/TW201803079A/zh
Priority to US15/631,263 priority patent/US10403380B2/en
Publication of JP2018006525A publication Critical patent/JP2018006525A/ja
Publication of JP2018006525A5 publication Critical patent/JP2018006525A5/ja
Withdrawn legal-status Critical Current

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JP2016130389A 2016-06-30 2016-06-30 半導体装置 Withdrawn JP2018006525A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016130389A JP2018006525A (ja) 2016-06-30 2016-06-30 半導体装置
CN201710386693.6A CN107564886A (zh) 2016-06-30 2017-05-26 半导体器件
TW106119383A TW201803079A (zh) 2016-06-30 2017-06-12 半導體裝置
US15/631,263 US10403380B2 (en) 2016-06-30 2017-06-23 Semiconductor device having an anti-fuse element and method for suppressing the expansion of the cell current distribution to improve the writing yield thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016130389A JP2018006525A (ja) 2016-06-30 2016-06-30 半導体装置

Publications (2)

Publication Number Publication Date
JP2018006525A JP2018006525A (ja) 2018-01-11
JP2018006525A5 true JP2018006525A5 (enExample) 2018-12-27

Family

ID=60807151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016130389A Withdrawn JP2018006525A (ja) 2016-06-30 2016-06-30 半導体装置

Country Status (4)

Country Link
US (1) US10403380B2 (enExample)
JP (1) JP2018006525A (enExample)
CN (1) CN107564886A (enExample)
TW (1) TW201803079A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102178025B1 (ko) * 2016-08-09 2020-11-13 매그나칩 반도체 유한회사 감소된 레이아웃 면적을 갖는 otp 셀
EP3454318B1 (en) * 2017-09-12 2022-05-11 eMemory Technology Inc. Security system with entropy bits generated by a puf
US10685727B2 (en) * 2018-08-10 2020-06-16 Ememory Technology Inc. Level shifter
WO2020042078A1 (zh) * 2018-08-30 2020-03-05 深圳市为通博科技有限责任公司 存储单元、存储器件以及存储单元的操作方法
US11093684B2 (en) 2018-10-31 2021-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Power rail with non-linear edge
US11030372B2 (en) * 2018-10-31 2021-06-08 Taiwan Semiconductor Manufacturing Company Ltd. Method for generating layout diagram including cell having pin patterns and semiconductor device based on same
US11600626B2 (en) 2019-12-13 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including anti-fuse cell
JP7517683B2 (ja) * 2020-06-25 2024-07-17 株式会社フローディア 半導体記憶装置
WO2021157419A1 (ja) * 2020-02-04 2021-08-12 株式会社フローディア 半導体記憶装置
JP6721205B1 (ja) * 2020-02-04 2020-07-08 株式会社フローディア 半導体記憶装置
US11189356B2 (en) * 2020-02-27 2021-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. One-time-programmable memory
CN115995448A (zh) * 2021-10-20 2023-04-21 中国电子科技集团公司第五十八研究所 一种反熔丝单元结构及其制备方法
TWI795275B (zh) * 2022-04-22 2023-03-01 國立清華大學 低電壓一次性寫入記憶體及其陣列

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6674667B2 (en) * 2001-02-13 2004-01-06 Micron Technology, Inc. Programmable fuse and antifuse and method therefor
FR2843482A1 (fr) * 2002-08-12 2004-02-13 St Microelectronics Sa Procede de programmation d'un anti-fusible, et circuit de programmation associe
US6816427B2 (en) * 2002-11-27 2004-11-09 Novocell Semiconductor, Inc. Method of utilizing a plurality of voltage pulses to program non-volatile memory elements and related embedded memories
US7157782B1 (en) * 2004-02-17 2007-01-02 Altera Corporation Electrically-programmable transistor antifuses
JP4383987B2 (ja) 2004-08-18 2009-12-16 株式会社東芝 Ｍｏｓ型電気ヒューズとそのプログラム方法
US7544968B1 (en) * 2005-08-24 2009-06-09 Xilinx, Inc. Non-volatile memory cell with charge storage element and method of programming
US7671401B2 (en) * 2005-10-28 2010-03-02 Mosys, Inc. Non-volatile memory in CMOS logic process
JP4427534B2 (ja) * 2006-09-29 2010-03-10 株式会社東芝 Ｍｏｓキャパシタ、チャージポンプ回路、及び半導体記憶回路
KR100845407B1 (ko) * 2007-02-16 2008-07-10 매그나칩 반도체 유한회사 원-타임-프로그래머블 셀 및 이를 구비하는 ｏｔｐ 메모리
US7741697B2 (en) * 2007-04-17 2010-06-22 Applied Intellectual Properties Co., Ltd. Semiconductor device structure for anti-fuse
JP2009054662A (ja) * 2007-08-24 2009-03-12 Elpida Memory Inc アンチヒューズ素子及びこれを有する半導体装置
KR101051673B1 (ko) 2008-02-20 2011-07-26 매그나칩 반도체 유한회사 안티퓨즈 및 그 형성방법, 이를 구비한 비휘발성 메모리소자의 단위 셀
JP5590842B2 (ja) * 2009-09-29 2014-09-17 ルネサスエレクトロニクス株式会社 半導体記憶装置および半導体記憶装置の制御方法
JP2011119640A (ja) 2009-11-06 2011-06-16 Renesas Electronics Corp 半導体装置およびその製造方法
JP5466594B2 (ja) * 2010-07-29 2014-04-09 ルネサスエレクトロニクス株式会社 半導体記憶装置及びアンチヒューズのプログラム方法

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