JP2017516317A5 - - Google Patents

Download PDF

Info

Publication number
JP2017516317A5
JP2017516317A5 JP2017508760A JP2017508760A JP2017516317A5 JP 2017516317 A5 JP2017516317 A5 JP 2017516317A5 JP 2017508760 A JP2017508760 A JP 2017508760A JP 2017508760 A JP2017508760 A JP 2017508760A JP 2017516317 A5 JP2017516317 A5 JP 2017516317A5
Authority
JP
Japan
Prior art keywords
layer
charge injection
injection layer
perovskite
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017508760A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017516317A (ja
JP7005345B2 (ja
Filing date
Publication date
Priority claimed from GBGB1407606.1A external-priority patent/GB201407606D0/en
Application filed filed Critical
Publication of JP2017516317A publication Critical patent/JP2017516317A/ja
Publication of JP2017516317A5 publication Critical patent/JP2017516317A5/ja
Application granted granted Critical
Publication of JP7005345B2 publication Critical patent/JP7005345B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2017508760A 2014-04-30 2015-04-29 エレクトロルミネセンスデバイス Active JP7005345B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1407606.1A GB201407606D0 (en) 2014-04-30 2014-04-30 Electroluminescent device
GB1407606.1 2014-04-30
PCT/EP2015/059419 WO2015166006A1 (en) 2014-04-30 2015-04-29 Electroluminescent device

Publications (3)

Publication Number Publication Date
JP2017516317A JP2017516317A (ja) 2017-06-15
JP2017516317A5 true JP2017516317A5 (enExample) 2018-06-14
JP7005345B2 JP7005345B2 (ja) 2022-02-04

Family

ID=50972111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017508760A Active JP7005345B2 (ja) 2014-04-30 2015-04-29 エレクトロルミネセンスデバイス

Country Status (9)

Country Link
US (1) US11258025B2 (enExample)
EP (1) EP3138138B1 (enExample)
JP (1) JP7005345B2 (enExample)
KR (1) KR102349719B1 (enExample)
CN (1) CN106463639B (enExample)
AU (1) AU2015254628A1 (enExample)
CA (1) CA2947381A1 (enExample)
GB (1) GB201407606D0 (enExample)
WO (1) WO2015166006A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6417632B2 (ja) * 2014-05-13 2018-11-07 パナソニックIpマネジメント株式会社 有機発光素子およびその製造方法
EP3149765B1 (en) 2014-05-28 2019-03-13 Alliance for Sustainable Energy, LLC Methods for producing perovskite materials
US9701696B2 (en) 2015-02-27 2017-07-11 Alliance For Sustainable Energy, Llc Methods for producing single crystal mixed halide perovskites
US9711760B2 (en) * 2015-06-30 2017-07-18 Nanyang Technological University Light-emitting device, method of forming and operating the same
WO2017001542A1 (en) 2015-06-30 2017-01-05 Cambridge Enterprise Limited Luminescent device
US9905765B2 (en) * 2015-08-13 2018-02-27 Florida State University Research Foundation, Inc. Polymer-perovskite films, devices, and methods
JP6725136B2 (ja) * 2015-11-08 2020-07-15 キング アブドラ ユニバーシティ オブ サイエンス アンド テクノロジー 空気中で安定な表面不動態化ペロブスカイト量子ドット(qd)、このqdを作製する方法及びこのqdを使用する方法
KR20170079877A (ko) 2015-12-31 2017-07-10 주식회사 동진쎄미켐 접착필름의 봉지 기술을 이용한 유기전자소자 및 이의 제조 방법
JP6697406B2 (ja) * 2016-01-21 2020-05-20 株式会社東芝 透明電極、電子デバイス、および電子デバイスの製造方法
KR101755983B1 (ko) * 2016-02-12 2017-07-10 포항공과대학교 산학협력단 금속 할라이드 페로브스카이트 발광소자 및 이의 제조방법
CN105679807B (zh) * 2016-04-15 2020-04-28 深圳市华星光电技术有限公司 Oled显示器件及其制作方法
KR102562899B1 (ko) 2016-06-02 2023-08-04 삼성디스플레이 주식회사 발광 소자
KR102600473B1 (ko) * 2016-06-09 2023-11-13 삼성디스플레이 주식회사 조명장치
KR102586044B1 (ko) * 2016-08-10 2023-10-10 삼성디스플레이 주식회사 발광 소자
CN106229424B (zh) * 2016-08-23 2019-05-03 陕西师范大学 一种基于钙钛矿薄片的发光器件及其制备方法
CN109417108B (zh) * 2016-09-28 2020-10-23 华为技术有限公司 透明电极及其制备方法、显示面板、太阳能电池
CN107146854A (zh) * 2017-05-11 2017-09-08 安徽熙泰智能科技有限公司 一种钙钛矿发光二极管的硅基微显示器件及其制备方法
CN116723718A (zh) * 2017-07-06 2023-09-08 九州有机光材股份有限公司 用于抑制来自具有钙钛矿层的有机发光元件的发光的角度依赖性的方法
FR3073088B1 (fr) * 2017-10-26 2019-11-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif electronique organique ou hybride et son procede de fabrication
CN108258123B (zh) * 2018-01-18 2021-08-27 南方科技大学 一种调控钙钛矿型材料晶相转变温度的方法
CN108258133B (zh) * 2018-01-22 2020-05-01 苏州大学 钙钛矿发光二极管及其制备方法
WO2019164180A1 (ko) * 2018-02-21 2019-08-29 고려대학교 세종산학협력단 유기전계발광소자용 조성물, 이로부터 제조된 정공주입층 재료 및 정공주입층을 포함하는 유기전계발광소자
WO2019173643A1 (en) * 2018-03-09 2019-09-12 Hrl Laboratories, Llc Electrically reconfigurable optical apparatus using electric field
US11121339B2 (en) * 2018-05-11 2021-09-14 Nanosys, Inc. Quantum dot LED design based on resonant energy transfer
US20200020671A1 (en) * 2018-07-10 2020-01-16 Kuan-Yu Lu Single-piece multi-frequency infrared light-emitting-diode (led) and multi- frequency high-precision object recognition system formed by using the same
JP7178215B2 (ja) * 2018-08-30 2022-11-25 エルジー ディスプレイ カンパニー リミテッド 無機発光素子
US20210351320A1 (en) * 2018-10-25 2021-11-11 Sharp Kabushiki Kaisha Light-Emitting Element
KR102617709B1 (ko) * 2018-11-30 2023-12-22 엘지디스플레이 주식회사 페로브스카이트 발광 소자
CN109860440A (zh) * 2019-03-29 2019-06-07 合肥工业大学 一种基于摩擦工艺的钙钛矿偏振发光二极管的制备方法
CN109935699B (zh) * 2019-04-02 2020-10-09 北京交通大学 一种倍增型有机光电探测器及其制备方法
EP3972002A4 (en) * 2019-05-13 2022-12-07 Boe Technology Group Co., Ltd. LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
WO2021010897A1 (en) * 2019-07-15 2021-01-21 National University Of Singapore Near infra-red light emitting diodes
CN111244283B (zh) * 2020-01-16 2023-05-05 广西大学 一种增益型钙钛矿光电探测器、制备方法及应用
CN115485422B (zh) 2020-05-20 2024-07-02 Hrl实验室有限责任公司 在硅衬底上生长通过结晶光学膜氢化而在红外光谱中可选地具有极小光损耗的结晶光学膜的方法
US11988907B1 (en) 2020-05-20 2024-05-21 Hrl Laboratories, Llc Electric field-tunable IR devices with very large modulation of refractive index and methods to fabricate them
US11493824B2 (en) 2020-05-20 2022-11-08 Hrl Laboratories, Llc Solid state electrically variable-focal length lens
TWI753551B (zh) * 2020-08-27 2022-01-21 財團法人工業技術研究院 鈣鈦礦膜及其製造方法
CN114665029A (zh) 2020-12-24 2022-06-24 Tcl科技集团股份有限公司 发光二极管及其制备方法
CN112949045B (zh) * 2021-02-06 2022-10-14 四川大学 一种稳态微波等离子体的测算方法
CN113285042A (zh) * 2021-04-22 2021-08-20 北方民族大学 一种基于CsPbI3材料的发光二极管
CN115701227A (zh) * 2021-07-26 2023-02-07 北京京东方技术开发有限公司 量子点发光器件及其制备方法、显示装置
CN114603956A (zh) * 2022-02-16 2022-06-10 闽都创新实验室 一种复合转光膜及其制备方法
CN115872871B (zh) * 2022-09-23 2024-10-01 南方科技大学 一种钙钛矿的合成方法及其应用

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093698A (en) * 1991-02-12 1992-03-03 Kabushiki Kaisha Toshiba Organic electroluminescent device
US5882548A (en) 1997-05-08 1999-03-16 International Business Machines Corporation Luminescent organic-inorganic perovskites with a divalent rare earth metal halide framework
JP3469764B2 (ja) * 1997-12-17 2003-11-25 三洋電機株式会社 有機エレクトロルミネッセンス装置
JP3885412B2 (ja) 1999-05-25 2007-02-21 松下電器産業株式会社 有機電界発光素子
US6420056B1 (en) 1999-07-08 2002-07-16 International Business Machines Corporation Electroluminescent device with dye-containing organic-inorganic hybrid materials as an emitting layer
JP2002299063A (ja) * 2001-04-03 2002-10-11 Japan Science & Technology Corp 臭化鉛系層状ペロブスカイト化合物を発光層とした電界発光素子
KR100888424B1 (ko) * 2001-05-16 2009-03-11 더 트러스티즈 오브 프린스턴 유니버시티 고효율 다칼라 전기 유기 발광 장치
US7652280B2 (en) * 2007-04-11 2010-01-26 General Electric Company Light-emitting device and article
WO2009104595A1 (ja) 2008-02-19 2009-08-27 独立行政法人産業技術総合研究所 酸化物ぺロブスカイト薄膜el素子
GB0811199D0 (en) * 2008-06-18 2008-07-23 Cambridge Entpr Ltd Electro-optic diode devices
WO2011071738A2 (en) 2009-12-08 2011-06-16 OmniPV, Inc. Luminescent materials that emit light in the visible range or the near infrared range and methods of forming thereof
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
PL2850669T3 (pl) 2012-05-18 2016-08-31 Isis Innovation Urządzenie fotowoltaiczne zawierające Perowskity
EP2693503A1 (en) 2012-08-03 2014-02-05 Ecole Polytechnique Fédérale de Lausanne (EPFL) Organo metal halide perovskite heterojunction solar cell and fabrication thereof
EP3413365B2 (en) * 2012-09-18 2025-02-26 Oxford University Innovation Limited Optoelectronic device
WO2016009450A2 (en) 2014-07-17 2016-01-21 Indian Institute Of Technology Bombay Photonic devices by organo-metallic halides based perovskites material and its method of preparation

Similar Documents

Publication Publication Date Title
JP2017516317A5 (enExample)
EP3690969B1 (en) Manufacturing method of an all-solution oled device
JP5821038B2 (ja) 有機エレクトロルミネッセンス素子
CN105206718B (zh) 一种溶液法制备的CsPbX3无机钙钛矿量子点发光二极管
CN110112305B (zh) Qled器件及其制作方法、显示面板及显示装置
CN108886101A (zh) 量子点发光二极管及其制造方法、显示面板和显示装置
JP2018504787A5 (enExample)
US11410818B2 (en) Semiconductor elements and method for manufacturing the same
CN104241540A (zh) 一种有机电致发光显示器件、其制作方法及显示装置
JP2014507782A5 (enExample)
CN105244446B (zh) 有机电致发光器件及其制备方法、显示装置
CN106104840A (zh) 制造堆叠的有机发光二极管的方法和设备及堆叠的oled装置
CN103682152A (zh) 透明导电电极及其形成方法、有机发光二极管(oled)器件及其形成方法
Ohisa et al. Doping of tetraalkylammonium salts in polyethylenimine ethoxylated for efficient electron injection layers in solution-processed organic light-emitting devices
JP2015153864A (ja) 有機膜及びこれを用いた有機電子デバイス
CN104167497A (zh) 有机发光显示器件及其制备方法、显示装置
CN103839971A (zh) 有机发光显示器及其制造方法
TWI629814B (zh) 有機發光裝置、顯示裝置以及照明裝置
TW200428902A (en) Electronic devices
CN108461640A (zh) 晶态有机电致发光二极管及其应用
JP7178215B2 (ja) 無機発光素子
KR20140011681A (ko) 유기태양전지
TWI740036B (zh) 有機發光裝置及其製造方法
CN214068751U (zh) 量子点发光二极管、显示面板和显示装置
JP2019054110A (ja) イオン性化合物キャリア注入材料を用いた有機el素子