JP2017516317A5 - - Google Patents

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Publication number
JP2017516317A5
JP2017516317A5 JP2017508760A JP2017508760A JP2017516317A5 JP 2017516317 A5 JP2017516317 A5 JP 2017516317A5 JP 2017508760 A JP2017508760 A JP 2017508760A JP 2017508760 A JP2017508760 A JP 2017508760A JP 2017516317 A5 JP2017516317 A5 JP 2017516317A5
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JP
Japan
Prior art keywords
layer
charge injection
injection layer
perovskite
emitting device
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JP2017508760A
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English (en)
Japanese (ja)
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JP7005345B2 (ja
JP2017516317A (ja
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Priority claimed from GBGB1407606.1A external-priority patent/GB201407606D0/en
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Publication of JP2017516317A5 publication Critical patent/JP2017516317A5/ja
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JP2017508760A 2014-04-30 2015-04-29 エレクトロルミネセンスデバイス Active JP7005345B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1407606.1 2014-04-30
GBGB1407606.1A GB201407606D0 (en) 2014-04-30 2014-04-30 Electroluminescent device
PCT/EP2015/059419 WO2015166006A1 (en) 2014-04-30 2015-04-29 Electroluminescent device

Publications (3)

Publication Number Publication Date
JP2017516317A JP2017516317A (ja) 2017-06-15
JP2017516317A5 true JP2017516317A5 (enExample) 2018-06-14
JP7005345B2 JP7005345B2 (ja) 2022-02-04

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JP2017508760A Active JP7005345B2 (ja) 2014-04-30 2015-04-29 エレクトロルミネセンスデバイス

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US (1) US11258025B2 (enExample)
EP (1) EP3138138B1 (enExample)
JP (1) JP7005345B2 (enExample)
KR (1) KR102349719B1 (enExample)
CN (1) CN106463639B (enExample)
AU (1) AU2015254628A1 (enExample)
CA (1) CA2947381A1 (enExample)
GB (1) GB201407606D0 (enExample)
WO (1) WO2015166006A1 (enExample)

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CN108258123B (zh) * 2018-01-18 2021-08-27 南方科技大学 一种调控钙钛矿型材料晶相转变温度的方法
CN108258133B (zh) * 2018-01-22 2020-05-01 苏州大学 钙钛矿发光二极管及其制备方法
WO2019164180A1 (ko) * 2018-02-21 2019-08-29 고려대학교 세종산학협력단 유기전계발광소자용 조성물, 이로부터 제조된 정공주입층 재료 및 정공주입층을 포함하는 유기전계발광소자
US10955720B2 (en) * 2018-03-09 2021-03-23 Hrl Laboratories, Llc Electrically reconfigurable optical apparatus using electric field
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KR102617709B1 (ko) * 2018-11-30 2023-12-22 엘지디스플레이 주식회사 페로브스카이트 발광 소자
CN109860440A (zh) * 2019-03-29 2019-06-07 合肥工业大学 一种基于摩擦工艺的钙钛矿偏振发光二极管的制备方法
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WO2021010897A1 (en) * 2019-07-15 2021-01-21 National University Of Singapore Near infra-red light emitting diodes
CN111244283B (zh) * 2020-01-16 2023-05-05 广西大学 一种增益型钙钛矿光电探测器、制备方法及应用
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CN112949045B (zh) * 2021-02-06 2022-10-14 四川大学 一种稳态微波等离子体的测算方法
CN113285042A (zh) * 2021-04-22 2021-08-20 北方民族大学 一种基于CsPbI3材料的发光二极管
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