KR102349719B1 - 전계 발광 소자 - Google Patents

전계 발광 소자 Download PDF

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KR102349719B1
KR102349719B1 KR1020167033497A KR20167033497A KR102349719B1 KR 102349719 B1 KR102349719 B1 KR 102349719B1 KR 1020167033497 A KR1020167033497 A KR 1020167033497A KR 20167033497 A KR20167033497 A KR 20167033497A KR 102349719 B1 KR102349719 B1 KR 102349719B1
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charge injection
light emitting
perovskite
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KR20160148675A (ko
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레자 사베리 모가담
헨리 스나이드
마이클 프라이스
펠릭스 데슐러
리차드 헨리 프렌드
파블로 도캄포
메이 링 라이
아디트야 사드하날라
쯔 쿠앙 탄
파비안 하누슈
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캠브리지 엔터프라이즈 리미티드
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KR1020167033497A 2014-04-30 2015-04-29 전계 발광 소자 Active KR102349719B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1407606.1A GB201407606D0 (en) 2014-04-30 2014-04-30 Electroluminescent device
GB1407606.1 2014-04-30
PCT/EP2015/059419 WO2015166006A1 (en) 2014-04-30 2015-04-29 Electroluminescent device

Publications (2)

Publication Number Publication Date
KR20160148675A KR20160148675A (ko) 2016-12-26
KR102349719B1 true KR102349719B1 (ko) 2022-01-11

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US (1) US11258025B2 (enExample)
EP (1) EP3138138B1 (enExample)
JP (1) JP7005345B2 (enExample)
KR (1) KR102349719B1 (enExample)
CN (1) CN106463639B (enExample)
AU (1) AU2015254628A1 (enExample)
CA (1) CA2947381A1 (enExample)
GB (1) GB201407606D0 (enExample)
WO (1) WO2015166006A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6417632B2 (ja) * 2014-05-13 2018-11-07 パナソニックIpマネジメント株式会社 有機発光素子およびその製造方法
EP3595026A1 (en) 2014-05-28 2020-01-15 Alliance for Sustainable Energy, LLC Methods for producing and using perovskite materials and devices therefrom
US9701696B2 (en) 2015-02-27 2017-07-11 Alliance For Sustainable Energy, Llc Methods for producing single crystal mixed halide perovskites
US9711760B2 (en) * 2015-06-30 2017-07-18 Nanyang Technological University Light-emitting device, method of forming and operating the same
JP6952610B2 (ja) 2015-06-30 2021-10-20 ケンブリッジ・エンタープライズ・リミテッドCambridge Enterprise Limited ルミネセントデバイス
US9905765B2 (en) 2015-08-13 2018-02-27 Florida State University Research Foundation, Inc. Polymer-perovskite films, devices, and methods
US10927295B2 (en) * 2015-11-08 2021-02-23 King Abdullah University Of Science And Technology Air-stable surface-passivated perovskite quantum dots (QDS), methods of making these QDS, and methods of using these QDS
KR20170079877A (ko) * 2015-12-31 2017-07-10 주식회사 동진쎄미켐 접착필름의 봉지 기술을 이용한 유기전자소자 및 이의 제조 방법
JP6697406B2 (ja) * 2016-01-21 2020-05-20 株式会社東芝 透明電極、電子デバイス、および電子デバイスの製造方法
KR101755983B1 (ko) * 2016-02-12 2017-07-10 포항공과대학교 산학협력단 금속 할라이드 페로브스카이트 발광소자 및 이의 제조방법
CN105679807B (zh) * 2016-04-15 2020-04-28 深圳市华星光电技术有限公司 Oled显示器件及其制作方法
KR102562899B1 (ko) 2016-06-02 2023-08-04 삼성디스플레이 주식회사 발광 소자
KR102600473B1 (ko) * 2016-06-09 2023-11-13 삼성디스플레이 주식회사 조명장치
KR102586044B1 (ko) * 2016-08-10 2023-10-10 삼성디스플레이 주식회사 발광 소자
CN106229424B (zh) * 2016-08-23 2019-05-03 陕西师范大学 一种基于钙钛矿薄片的发光器件及其制备方法
CN109417108B (zh) * 2016-09-28 2020-10-23 华为技术有限公司 透明电极及其制备方法、显示面板、太阳能电池
CN107146854A (zh) * 2017-05-11 2017-09-08 安徽熙泰智能科技有限公司 一种钙钛矿发光二极管的硅基微显示器件及其制备方法
CN110870088A (zh) * 2017-07-06 2020-03-06 九州有机光材股份有限公司 有机发光元件
FR3073088B1 (fr) * 2017-10-26 2019-11-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif electronique organique ou hybride et son procede de fabrication
CN108258123B (zh) * 2018-01-18 2021-08-27 南方科技大学 一种调控钙钛矿型材料晶相转变温度的方法
CN108258133B (zh) * 2018-01-22 2020-05-01 苏州大学 钙钛矿发光二极管及其制备方法
WO2019164180A1 (ko) * 2018-02-21 2019-08-29 고려대학교 세종산학협력단 유기전계발광소자용 조성물, 이로부터 제조된 정공주입층 재료 및 정공주입층을 포함하는 유기전계발광소자
CN111788511A (zh) * 2018-03-09 2020-10-16 Hrl实验室有限责任公司 使用电场的电可重构的光学设备
US11121339B2 (en) * 2018-05-11 2021-09-14 Nanosys, Inc. Quantum dot LED design based on resonant energy transfer
US20200020671A1 (en) * 2018-07-10 2020-01-16 Kuan-Yu Lu Single-piece multi-frequency infrared light-emitting-diode (led) and multi- frequency high-precision object recognition system formed by using the same
JP7178215B2 (ja) * 2018-08-30 2022-11-25 エルジー ディスプレイ カンパニー リミテッド 無機発光素子
US20210351320A1 (en) * 2018-10-25 2021-11-11 Sharp Kabushiki Kaisha Light-Emitting Element
KR102617709B1 (ko) * 2018-11-30 2023-12-22 엘지디스플레이 주식회사 페로브스카이트 발광 소자
CN109860440A (zh) * 2019-03-29 2019-06-07 合肥工业大学 一种基于摩擦工艺的钙钛矿偏振发光二极管的制备方法
CN109935699B (zh) * 2019-04-02 2020-10-09 北京交通大学 一种倍增型有机光电探测器及其制备方法
JP2022539623A (ja) * 2019-05-13 2022-09-13 京東方科技集團股▲ふん▼有限公司 発光デバイス及びその製造方法
US20220263042A1 (en) * 2019-07-15 2022-08-18 National University Of Singapore Near infra-red light emitting diodes
CN111244283B (zh) * 2020-01-16 2023-05-05 广西大学 一种增益型钙钛矿光电探测器、制备方法及应用
US11988907B1 (en) 2020-05-20 2024-05-21 Hrl Laboratories, Llc Electric field-tunable IR devices with very large modulation of refractive index and methods to fabricate them
CN115443421B (zh) 2020-05-20 2023-10-27 Hrl实验室有限责任公司 固态电动可变焦距透镜
US11788183B2 (en) 2020-05-20 2023-10-17 Hrl Laboratories, Llc Method for growing crystalline optical films on Si substrates which may optionally have an extremely small optical loss in the infra-red spectrum with hydrogenation of the crystalline optical films
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014045021A1 (en) * 2012-09-18 2014-03-27 Isis Innovation Limited Optoelectronic device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093698A (en) * 1991-02-12 1992-03-03 Kabushiki Kaisha Toshiba Organic electroluminescent device
US5882548A (en) * 1997-05-08 1999-03-16 International Business Machines Corporation Luminescent organic-inorganic perovskites with a divalent rare earth metal halide framework
JP3469764B2 (ja) * 1997-12-17 2003-11-25 三洋電機株式会社 有機エレクトロルミネッセンス装置
JP3885412B2 (ja) * 1999-05-25 2007-02-21 松下電器産業株式会社 有機電界発光素子
US6420056B1 (en) * 1999-07-08 2002-07-16 International Business Machines Corporation Electroluminescent device with dye-containing organic-inorganic hybrid materials as an emitting layer
JP2002299063A (ja) 2001-04-03 2002-10-11 Japan Science & Technology Corp 臭化鉛系層状ペロブスカイト化合物を発光層とした電界発光素子
EP1390962B2 (en) * 2001-05-16 2023-07-05 The Trustees Of Princeton University High efficiency multi-color electro-phosphorescent oleds
US7652280B2 (en) * 2007-04-11 2010-01-26 General Electric Company Light-emitting device and article
US8193704B2 (en) 2008-02-19 2012-06-05 National Institute Of Advanced Industrial Science And Technology Perovskite oxide thin film EL element
GB0811199D0 (en) * 2008-06-18 2008-07-23 Cambridge Entpr Ltd Electro-optic diode devices
WO2011071738A2 (en) 2009-12-08 2011-06-16 OmniPV, Inc. Luminescent materials that emit light in the visible range or the near infrared range and methods of forming thereof
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
WO2013171520A1 (en) 2012-05-18 2013-11-21 Isis Innovation Limited Optoelectronic device comprising perovskites
EP2693503A1 (en) 2012-08-03 2014-02-05 Ecole Polytechnique Fédérale de Lausanne (EPFL) Organo metal halide perovskite heterojunction solar cell and fabrication thereof
WO2016009450A2 (en) 2014-07-17 2016-01-21 Indian Institute Of Technology Bombay Photonic devices by organo-metallic halides based perovskites material and its method of preparation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014045021A1 (en) * 2012-09-18 2014-03-27 Isis Innovation Limited Optoelectronic device

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