CA2947381A1 - Electroluminescent device - Google Patents

Electroluminescent device Download PDF

Info

Publication number
CA2947381A1
CA2947381A1 CA2947381A CA2947381A CA2947381A1 CA 2947381 A1 CA2947381 A1 CA 2947381A1 CA 2947381 A CA2947381 A CA 2947381A CA 2947381 A CA2947381 A CA 2947381A CA 2947381 A1 CA2947381 A1 CA 2947381A1
Authority
CA
Canada
Prior art keywords
layer
perovskite
solid state
emitting device
state light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2947381A
Other languages
English (en)
French (fr)
Inventor
Richard Henry Friend
Zhi Kuang Tan
Aditya SADHANALA
May Ling LAI
Pablo Docampo
Felix DESCHLER
Michael Price
Fabian HANUSCH
Henry Snaith
Reza Saberi MOGHADDAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambridge Enterprise Ltd
Original Assignee
Cambridge Enterprise Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge Enterprise Ltd filed Critical Cambridge Enterprise Ltd
Publication of CA2947381A1 publication Critical patent/CA2947381A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/10—Definition of the polymer structure
    • C08G2261/14—Side-groups
    • C08G2261/142—Side-chains containing oxygen
    • C08G2261/1424—Side-chains containing oxygen containing ether groups, including alkoxy
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
    • C08G2261/314—Condensed aromatic systems, e.g. perylene, anthracene or pyrene
    • C08G2261/3142—Condensed aromatic systems, e.g. perylene, anthracene or pyrene fluorene-based, e.g. fluorene, indenofluorene, or spirobifluorene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
    • C08G2261/3221—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more nitrogen atoms as the only heteroatom, e.g. pyrrole, pyridine or triazole
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
    • C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/50—Physical properties
    • C08G2261/51—Charge transport
    • C08G2261/512—Hole transport
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/90—Applications
    • C08G2261/95—Use in organic luminescent diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
CA2947381A 2014-04-30 2015-04-29 Electroluminescent device Abandoned CA2947381A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1407606.1A GB201407606D0 (en) 2014-04-30 2014-04-30 Electroluminescent device
GB1407606.1 2014-04-30
PCT/EP2015/059419 WO2015166006A1 (en) 2014-04-30 2015-04-29 Electroluminescent device

Publications (1)

Publication Number Publication Date
CA2947381A1 true CA2947381A1 (en) 2015-11-05

Family

ID=50972111

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2947381A Abandoned CA2947381A1 (en) 2014-04-30 2015-04-29 Electroluminescent device

Country Status (9)

Country Link
US (1) US11258025B2 (enExample)
EP (1) EP3138138B1 (enExample)
JP (1) JP7005345B2 (enExample)
KR (1) KR102349719B1 (enExample)
CN (1) CN106463639B (enExample)
AU (1) AU2015254628A1 (enExample)
CA (1) CA2947381A1 (enExample)
GB (1) GB201407606D0 (enExample)
WO (1) WO2015166006A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6417632B2 (ja) * 2014-05-13 2018-11-07 パナソニックＩｐマネジメント株式会社 有機発光素子およびその製造方法
EP3149765B1 (en) 2014-05-28 2019-03-13 Alliance for Sustainable Energy, LLC Methods for producing perovskite materials
US9701696B2 (en) 2015-02-27 2017-07-11 Alliance For Sustainable Energy, Llc Methods for producing single crystal mixed halide perovskites
US9711760B2 (en) * 2015-06-30 2017-07-18 Nanyang Technological University Light-emitting device, method of forming and operating the same
WO2017001542A1 (en) 2015-06-30 2017-01-05 Cambridge Enterprise Limited Luminescent device
US9905765B2 (en) * 2015-08-13 2018-02-27 Florida State University Research Foundation, Inc. Polymer-perovskite films, devices, and methods
JP6725136B2 (ja) * 2015-11-08 2020-07-15 キング アブドラ ユニバーシティ オブ サイエンス アンド テクノロジー 空気中で安定な表面不動態化ペロブスカイト量子ドット（ｑｄ）、このｑｄを作製する方法及びこのｑｄを使用する方法
KR20170079877A (ko) 2015-12-31 2017-07-10 주식회사 동진쎄미켐 접착필름의 봉지 기술을 이용한 유기전자소자 및 이의 제조 방법
JP6697406B2 (ja) * 2016-01-21 2020-05-20 株式会社東芝 透明電極、電子デバイス、および電子デバイスの製造方法
KR101755983B1 (ko) * 2016-02-12 2017-07-10 포항공과대학교 산학협력단 금속 할라이드 페로브스카이트 발광소자 및 이의 제조방법
CN105679807B (zh) * 2016-04-15 2020-04-28 深圳市华星光电技术有限公司 Oled显示器件及其制作方法
KR102562899B1 (ko) 2016-06-02 2023-08-04 삼성디스플레이 주식회사 발광 소자
KR102600473B1 (ko) * 2016-06-09 2023-11-13 삼성디스플레이 주식회사 조명장치
KR102586044B1 (ko) * 2016-08-10 2023-10-10 삼성디스플레이 주식회사 발광 소자
CN106229424B (zh) * 2016-08-23 2019-05-03 陕西师范大学 一种基于钙钛矿薄片的发光器件及其制备方法
CN109417108B (zh) * 2016-09-28 2020-10-23 华为技术有限公司 透明电极及其制备方法、显示面板、太阳能电池
CN107146854A (zh) * 2017-05-11 2017-09-08 安徽熙泰智能科技有限公司 一种钙钛矿发光二极管的硅基微显示器件及其制备方法
CN116723718A (zh) * 2017-07-06 2023-09-08 九州有机光材股份有限公司 用于抑制来自具有钙钛矿层的有机发光元件的发光的角度依赖性的方法
FR3073088B1 (fr) * 2017-10-26 2019-11-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif electronique organique ou hybride et son procede de fabrication
CN108258123B (zh) * 2018-01-18 2021-08-27 南方科技大学 一种调控钙钛矿型材料晶相转变温度的方法
CN108258133B (zh) * 2018-01-22 2020-05-01 苏州大学 钙钛矿发光二极管及其制备方法
WO2019164180A1 (ko) * 2018-02-21 2019-08-29 고려대학교 세종산학협력단 유기전계발광소자용 조성물, 이로부터 제조된 정공주입층 재료 및 정공주입층을 포함하는 유기전계발광소자
WO2019173643A1 (en) * 2018-03-09 2019-09-12 Hrl Laboratories, Llc Electrically reconfigurable optical apparatus using electric field
US11121339B2 (en) * 2018-05-11 2021-09-14 Nanosys, Inc. Quantum dot LED design based on resonant energy transfer
US20200020671A1 (en) * 2018-07-10 2020-01-16 Kuan-Yu Lu Single-piece multi-frequency infrared light-emitting-diode (led) and multi- frequency high-precision object recognition system formed by using the same
JP7178215B2 (ja) * 2018-08-30 2022-11-25 エルジー ディスプレイ カンパニー リミテッド 無機発光素子
US20210351320A1 (en) * 2018-10-25 2021-11-11 Sharp Kabushiki Kaisha Light-Emitting Element
KR102617709B1 (ko) * 2018-11-30 2023-12-22 엘지디스플레이 주식회사 페로브스카이트 발광 소자
CN109860440A (zh) * 2019-03-29 2019-06-07 合肥工业大学 一种基于摩擦工艺的钙钛矿偏振发光二极管的制备方法
CN109935699B (zh) * 2019-04-02 2020-10-09 北京交通大学 一种倍增型有机光电探测器及其制备方法
EP3972002A4 (en) * 2019-05-13 2022-12-07 Boe Technology Group Co., Ltd. LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
WO2021010897A1 (en) * 2019-07-15 2021-01-21 National University Of Singapore Near infra-red light emitting diodes
CN111244283B (zh) * 2020-01-16 2023-05-05 广西大学 一种增益型钙钛矿光电探测器、制备方法及应用
CN115485422B (zh) 2020-05-20 2024-07-02 Hrl实验室有限责任公司 在硅衬底上生长通过结晶光学膜氢化而在红外光谱中可选地具有极小光损耗的结晶光学膜的方法
US11988907B1 (en) 2020-05-20 2024-05-21 Hrl Laboratories, Llc Electric field-tunable IR devices with very large modulation of refractive index and methods to fabricate them
US11493824B2 (en) 2020-05-20 2022-11-08 Hrl Laboratories, Llc Solid state electrically variable-focal length lens
TWI753551B (zh) * 2020-08-27 2022-01-21 財團法人工業技術研究院 鈣鈦礦膜及其製造方法
CN114665029A (zh) 2020-12-24 2022-06-24 Tcl科技集团股份有限公司 发光二极管及其制备方法
CN112949045B (zh) * 2021-02-06 2022-10-14 四川大学 一种稳态微波等离子体的测算方法
CN113285042A (zh) * 2021-04-22 2021-08-20 北方民族大学 一种基于CsPbI3材料的发光二极管
CN115701227A (zh) * 2021-07-26 2023-02-07 北京京东方技术开发有限公司 量子点发光器件及其制备方法、显示装置
CN114603956A (zh) * 2022-02-16 2022-06-10 闽都创新实验室 一种复合转光膜及其制备方法
CN115872871B (zh) * 2022-09-23 2024-10-01 南方科技大学 一种钙钛矿的合成方法及其应用

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093698A (en) * 1991-02-12 1992-03-03 Kabushiki Kaisha Toshiba Organic electroluminescent device
US5882548A (en) 1997-05-08 1999-03-16 International Business Machines Corporation Luminescent organic-inorganic perovskites with a divalent rare earth metal halide framework
JP3469764B2 (ja) * 1997-12-17 2003-11-25 三洋電機株式会社 有機エレクトロルミネッセンス装置
JP3885412B2 (ja) 1999-05-25 2007-02-21 松下電器産業株式会社 有機電界発光素子
US6420056B1 (en) 1999-07-08 2002-07-16 International Business Machines Corporation Electroluminescent device with dye-containing organic-inorganic hybrid materials as an emitting layer
JP2002299063A (ja) * 2001-04-03 2002-10-11 Japan Science & Technology Corp 臭化鉛系層状ペロブスカイト化合物を発光層とした電界発光素子
KR100888424B1 (ko) * 2001-05-16 2009-03-11 더 트러스티즈 오브 프린스턴 유니버시티 고효율 다칼라 전기 유기 발광 장치
US7652280B2 (en) * 2007-04-11 2010-01-26 General Electric Company Light-emitting device and article
WO2009104595A1 (ja) 2008-02-19 2009-08-27 独立行政法人産業技術総合研究所 酸化物ぺロブスカイト薄膜el素子
GB0811199D0 (en) * 2008-06-18 2008-07-23 Cambridge Entpr Ltd Electro-optic diode devices
WO2011071738A2 (en) 2009-12-08 2011-06-16 OmniPV, Inc. Luminescent materials that emit light in the visible range or the near infrared range and methods of forming thereof
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
PL2850669T3 (pl) 2012-05-18 2016-08-31 Isis Innovation Urządzenie fotowoltaiczne zawierające Perowskity
EP2693503A1 (en) 2012-08-03 2014-02-05 Ecole Polytechnique Fédérale de Lausanne (EPFL) Organo metal halide perovskite heterojunction solar cell and fabrication thereof
EP3413365B2 (en) * 2012-09-18 2025-02-26 Oxford University Innovation Limited Optoelectronic device
WO2016009450A2 (en) 2014-07-17 2016-01-21 Indian Institute Of Technology Bombay Photonic devices by organo-metallic halides based perovskites material and its method of preparation

Also Published As

Publication number Publication date
WO2015166006A1 (en) 2015-11-05
EP3138138A1 (en) 2017-03-08
JP2017516317A (ja) 2017-06-15
KR102349719B1 (ko) 2022-01-11
JP7005345B2 (ja) 2022-02-04
AU2015254628A1 (en) 2016-12-22
US20170054099A1 (en) 2017-02-23
GB201407606D0 (en) 2014-06-11
KR20160148675A (ko) 2016-12-26
CN106463639B (zh) 2019-02-05
CN106463639A (zh) 2017-02-22
US11258025B2 (en) 2022-02-22
EP3138138B1 (en) 2024-05-22

Similar Documents

Publication Publication Date Title
EP3138138B1 (en) Electroluminescent device
JP7063950B2 (ja) 電界発光素子
Shi et al. High-efficiency and air-stable perovskite quantum dots light-emitting diodes with an all-inorganic heterostructure
KR101357045B1 (ko) 그라핀이 결합된 산화물 반도체-그라핀 핵-껍질 양자점과 이를 이용한 튜너블 발광소자 및 그 제조 방법
Tan et al. Bright light-emitting diodes based on organometal halide perovskite
Shi et al. High-performance planar green light-emitting diodes based on a PEDOT: PSS/CH 3 NH 3 PbBr 3/ZnO sandwich structure
US11730047B1 (en) Perovskite based charge transport layers for thin film optoelectronic devices and methods of making
CA3074241C (en) Multiple-layer quantum-dot led and method of fabricating same
Yu et al. Full coverage all-inorganic cesium lead halide perovskite film for high-efficiency light-emitting diodes assisted by 1, 3, 5-tri (m-pyrid-3-yl-phenyl) benzene
Huang et al. Efficient polymer light-emitting diodes with ZnO nanoparticles and interpretation of observed sub-bandgap turn-on phenomenon
TW201712922A (zh) 摻雜有機半導體之方法及摻雜組合物
Qasim et al. Large-area quantum-dot light emitting diode arrays with ZnO nanoparticles as electron transport/injection layer
Friend Organic materials for large area electronics
Park Suppression of Halide Migration for High-Performance Blue Perovskite Light-Emitting Diodes
KR100567220B1 (ko) 개선된 효율을 갖는 유기 전계발광 소자 및 이에 기초한 디스플레이 장치
Kim et al. Electrical aging effect of ZnS based quantum dots for white light-emitting diodes
Jia Material Engineering towards High-Efficiency Perovskite Light-Emitting Diodes

Legal Events

Date Code Title Description
FZDE Discontinued

Effective date: 20211123

FZDE Discontinued

Effective date: 20211123