JP2017208533A - 積層配線膜および薄膜トランジスタ素子 - Google Patents
積層配線膜および薄膜トランジスタ素子 Download PDFInfo
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- JP2017208533A JP2017208533A JP2017078505A JP2017078505A JP2017208533A JP 2017208533 A JP2017208533 A JP 2017208533A JP 2017078505 A JP2017078505 A JP 2017078505A JP 2017078505 A JP2017078505 A JP 2017078505A JP 2017208533 A JP2017208533 A JP 2017208533A
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- film
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- alloy
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- 239000010408 film Substances 0.000 title claims description 205
- 239000010409 thin film Substances 0.000 title claims description 20
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 76
- 239000000956 alloy Substances 0.000 claims abstract description 76
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 29
- 239000000203 mixture Substances 0.000 claims abstract description 26
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 19
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010410 layer Substances 0.000 abstract description 208
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 41
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 41
- 238000010438 heat treatment Methods 0.000 abstract description 32
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 16
- 239000011229 interlayer Substances 0.000 abstract description 8
- 230000032798 delamination Effects 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 64
- 238000000034 method Methods 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 14
- 230000003647 oxidation Effects 0.000 description 14
- 238000007254 oxidation reaction Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000005477 sputtering target Methods 0.000 description 7
- 239000003513 alkali Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910017566 Cu-Mn Inorganic materials 0.000 description 3
- 229910017871 Cu—Mn Inorganic materials 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910017535 Cu-Al-Ni Inorganic materials 0.000 description 2
- 229910000914 Mn alloy Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03C17/3649—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer made of metals other than silver
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- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
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- C03C23/0075—Cleaning of glass
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/34—Nitrides
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
Description
[1]電気抵抗が10μΩcm以下のCuまたはCu合金からなる配線層と、該配線層の上層および下層のうちの少なくとも一方に設けられるCuとX元素を含むCu−X合金層とを備え、前記X元素は、Al、Mn、ZnおよびNiからなるX群から選ばれる少なくとも1種であり、前記Cu−X合金層を構成する金属が、下記(1)〜(5)のいずれか1つの組成系であり、配線パターンの幅が10μm以下であることを特徴とする積層配線膜。
(1)前記X群の元素を1種類のみ含み、その含有量が7at%以上27at%以下である。
(2)Alを4at%以上15at%以下含み、さらにMnを5at%以上10at%以下含む。
(3)Znを5at%以上10at%以下含み、さらにMnを5at%以上26at%以下含む。
(4)Znを4at%以上14at%以下含み、さらにAlを5at%以上15at%以下含む。
(5)Alを5at%以上10at%以下含み、さらにNiを2at%以上10at%以下含む。
[2]前記Cu−X合金層を構成する金属が、下記(1’)〜(5’)のいずれか1つの組成系であり、配線パターンの幅が5μm以下である、前記[1]に記載の積層配線膜。
(1’)前記X群の元素を1種類のみ含み、その含有量が6at%以上14at%以下である。
(2’)Alを4at%以上9at%以下含み、さらにMnを5at%以上10at%以下含む。
(3’)Znを5at%以上10at%以下含み、さらにMnを5at%以上10at%以下含む。
(4’)Znを4at%以上14at%以下含み、さらにAlを5at%以上10at%以下含む。
(5’)Alを5at%以上10at%以下含み、さらにNiを6at%以上10at%以下含む。
[3]基板に積層される積層配線膜であって、前記基板に積層される側の表面に、Tiを含む密着層をさらに有する、前記[1]または[2]に記載の積層配線膜。
[4]前記配線層の膜厚が50nm以上1000nm以下であり、前記Cu−X合金層の膜厚が5nm以上200nm以下である、前記[1]〜[3]のいずれか1に記載の積層配線膜。
[5]前記[1]記載の積層配線膜と、酸化物半導体を含むことを特徴とする薄膜トランジスタ素子。
[6]前記[2]記載の積層配線膜と、低温ポリシリコン半導体または酸化物半導体を含むことを特徴とする薄膜トランジスタ素子。
本発明の積層配線膜は、電気抵抗が10μΩcm以下のCuまたはCu合金からなる配線層と、該配線層の上層および下層のうちの少なくとも一方に設けられるCuとX元素を含むCu−X合金層とを備え、前記X元素は、Al、Mn、ZnおよびNiからなるX群から選ばれる少なくとも1種である。
配線層はCuまたはCu合金からなる膜である。以下、これらの膜を「Cu系膜」ということがある。配線層を導電層として形成する場合、該配線層はCu系膜であって、その電気抵抗は10μΩcm以下である。配線層の電気抵抗が10μΩcm以下であることで、積層配線膜の低電気抵抗を実現することができる。積層配線膜の電気抵抗をより低くし、導電性を改善するため、配線層の電気抵抗は、5μΩcm以下であることが好ましく、4μΩcm以下であることがより好ましい。また、CuはCu合金よりも電気抵抗が低いため、配線層はCuにより形成されることが好ましい。
Cu−X合金層は、キャップ層として配線層の上層および下層のうちの少なくとも一方に設けられる。配線層の少なくとも一方の面にキャップ層を設けることで、400℃以上500℃以下の高温熱処理においてもCu系膜の電気抵抗の上昇を抑え、また、SiOx成膜での膜剥離を抑制することができる。
(1)前記X群の元素を1種類のみ含み、その含有量が7at%以上27at%以下である。
(2)Alを4at%以上15at%以下含み、さらにMnを5at%以上10at%以下含む。
(3)Znを5at%以上10at%以下含み、さらにMnを5at%以上26at%以下含む。
(4)Znを4at%以上14at%以下含み、さらにAlを5at%以上15at%以下含む。
(5)Alを5at%以上10at%以下含み、さらにNiを2at%以上10at%以下含む。
(1’)前記X群の元素を1種類のみ含み、その含有量が6at%以上14at%以下である。
(2’)Alを4at%以上9at%以下含み、さらにMnを5at%以上10at%以下含む。
(3’)Znを5at%以上10at%以下含み、さらにMnを5at%以上10at%以下含む。
(4’)Znを4at%以上14at%以下含み、さらにAlを5at%以上10at%以下含む。
(5’)Alを5at%以上10at%以下含み、さらにNiを6at%以上10at%以下含む。
(スパッタリング条件)
成膜装置:DCマグネトロンスパッタリング装置(ULVAC社製「CS−200」)
基板:無アルカリガラス(コーニング社製「イーグル2000」)
基板温度:室温
成膜ガス:Arガス
ガス圧:2mTorr
スパッタパワー:300W
真空到達度:1×10−6Torr以下
本発明の薄膜トランジスタ素子は、電気抵抗が10μΩcm以下のCuまたはCu合金からなる配線層と、該配線層の上層および下層のうちの少なくとも一方に設けられるCuとX元素を含むCu−X合金層とを備え、前記X元素は、Al、Mn、ZnおよびNiからなるX群から選ばれる少なくとも1種である積層配線膜を用いることを特徴とする。また、TFTの活性層として、酸化物半導体もしくはLTPS半導体が用いられる。
(1)積層配線膜の作製
透明基板として、直径4インチ、板厚が0.7mmの無アルカリ硝子板を用意し、中性洗剤で洗浄後、エキシマUVランプに30分間照射して表面の汚染を除去した。この表面処理した無アルカリ硝子板上に、DCマグネトロンスパッタリング法により、表1に示す配線層とCu−X合金層であるキャップ層を備えた積層配線膜を成膜した。なお、試料No.1の配線膜は配線層のみの単層膜である。
成膜装置:DCマグネトロンスパッタリング装置(ULVAC社製「CS−200」)
基板:無アルカリ硝子板(コーニング社製「イーグル2000」)
基板温度:室温
成膜ガス:Arガス
ガス圧:2mTorr
スパッタパワー:300W
真空到達度:1×10−6Torr以下
積層配線膜の電気抵抗率を、次の通り測定した。即ち、無アルカリ硝子板上に表1に記載のCu系膜上にキャップ層を記載の膜厚で成膜したサンプルを4端子法で電気抵抗を測定した。測定した電気抵抗とCu系膜とキャップ層の膜厚の合計値から電気抵抗率を算出した。次いで、ULVAC社製の赤外線ランプ加熱装置:RTP−6を用い、N2雰囲気下で400℃と500℃のそれぞれで1時間の熱処理を行った後、同様に電気抵抗を測定し、上記同様の方法で電気抵抗率を算出した。
フォトレジストを用いて積層配線膜上にラインおよびスペースからなるレジストパターンを形成した。試料No.2〜39に記載する積層配線膜について、三菱ガス化学株式会社製の過水系エッチング液でエッチング加工を行い、その後、アセトンに浸漬してレジストを除去して透明基板ごと劈開した。次いで、上記エッチング加工を行った試料について、株式会社日立パワーソリューションズ製の電子顕微鏡:S−4000を用いて、その断面形状を観察した。図6(a)に示したように、キャップ層13が配線層12よりも張り出して延出部13aが形成されたものを「延出部有り」、図6(b)に示したように逆テーパー状になっているものを「逆テーsパー形状」、図6(c)に示したように順テーパー状になっているものを「順テーパー形状」と評価した。
Cu単膜に対するテーパー角度の比率(%)=[(Cu単膜のテーパー角度)−(積層配線膜のテーパー角度)]/(Cu単膜のテーパー角度)・・・(1)
積層配線膜のキャップ層上に、サムコ株式会社製のプラズマCVD装置:PD−220MLを用いてSiOx膜を成膜した。成膜にはSiH4とN2Oガスを用い、膜厚250nmのSiOx膜を成膜し、目視により外観を検査し、SiOx膜の剥離の有無を確認した。その結果を表1に示す。なお、耐酸化が不足している場合、SiOx膜の成膜時に膜の表面の酸化が進み、色ムラやさらには界面の体積膨張によってSiOx膜の膜剥がれが生じるため、好ましくない。
Tiを含む密着層を用いた場合の積層配線膜を下記の手順により作製した。具体的には、実施例1の場合と同様に、透明基板としての無アルカリ硝子板上に、DCマグネトロンスパッタリング法により、表2に示す密着層、配線層およびCu−X合金層であるキャップ層を備えた積層配線膜を順次成膜した。なお、試料No.40の配線膜は密着層および配線層のみの積層膜である。密着層、配線層およびキャップ層の成膜条件は、実施例1の場合と同様である。
2 配線層
3 キャップ層(Cu−X合金層)
4 絶縁膜(SiOx)
5 酸化物半導体
6 配線層
7 キャップ層(Cu−X合金層)
8 絶縁膜(SiOx)
11 基板
12 配線層
13 キャップ層
13a 延出部
14 密着層
[1]電気抵抗が10μΩcm以下のCuまたはCu合金からなる配線層と、該配線層の上層および下層のうちの少なくとも一方に設けられるCuとX元素を含むCu−X合金層とを備え、前記X元素は、Al、Mn、ZnおよびNiからなるX群から選ばれる少なくとも1種であり、前記Cu−X合金層を構成する金属が、下記(2)〜(5)のいずれか1つの組成系であり、配線パターンの幅が10μm以下であることを特徴とする積層配線膜。
(2)Alを4at%以上15at%以下含み、さらにMnを5at%以上10at%以下含む。
(3)Znを5at%以上10at%以下含み、さらにMnを5at%以上26at%以下含む。
(4)Znを4at%以上14at%以下含み、さらにAlを5at%以上15at%以下含む。
(5)Alを5at%以上10at%以下含み、さらにNiを2at%以上10at%以下含む。
[2]前記Cu−X合金層を構成する金属が、下記(2’)〜(5’)のいずれか1つの組成系であり、配線パターンの幅が5μm以下である、前記[1]に記載の積層配線膜。
(2’)Alを4at%以上9at%以下含み、さらにMnを5at%以上10at%以下含む。
(3’)Znを5at%以上10at%以下含み、さらにMnを5at%以上10at%以下含む。
(4’)Znを4at%以上14at%以下含み、さらにAlを5at%以上10at%以下含む。
(5’)Alを5at%以上10at%以下含み、さらにNiを6at%以上10at%以下含む。
[3]基板に積層される積層配線膜であって、前記基板に積層される側の表面に、Tiを含む密着層をさらに有する、前記[1]または[2]に記載の積層配線膜。
[4]前記配線層の膜厚が50nm以上1000nm以下であり、前記Cu−X合金層の膜厚が5nm以上200nm以下である、前記[1]〜[3]のいずれか1に記載の積層配線膜。
[5]前記[1]記載の積層配線膜と、酸化物半導体を含むことを特徴とする薄膜トランジスタ素子。
[6]前記[2]記載の積層配線膜と、低温ポリシリコン半導体または酸化物半導体を含むことを特徴とする薄膜トランジスタ素子。
Claims (6)
- 電気抵抗が10μΩcm以下のCuまたはCu合金からなる配線層と、該配線層の上層および下層のうちの少なくとも一方に設けられるCuとX元素を含むCu−X合金層とを備え、
前記X元素は、Al、Mn、ZnおよびNiからなるX群から選ばれる少なくとも1種であり、
前記Cu−X合金層を構成する金属が、下記(1)〜(5)のいずれか1つの組成系であり、
配線パターンの幅が10μm以下であることを特徴とする積層配線膜。
(1)前記X群の元素を1種類のみ含み、その含有量が7at%以上27at%以下である。
(2)Alを4at%以上15at%以下含み、さらにMnを5at%以上10at%以下含む。
(3)Znを5at%以上10at%以下含み、さらにMnを5at%以上26at%以下含む。
(4)Znを4at%以上14at%以下含み、さらにAlを5at%以上15at%以下含む。
(5)Alを5at%以上10at%以下含み、さらにNiを2at%以上10at%以下含む。 - 前記Cu−X合金層を構成する金属が、下記(1’)〜(5’)のいずれか1つの組成系であり、
配線パターンの幅が5μm以下である、請求項1に記載の積層配線膜。
(1’)前記X群の元素を1種類のみ含み、その含有量が6at%以上14at%以下である。
(2’)Alを4at%以上9at%以下含み、さらにMnを5at%以上10at%以下含む。
(3’)Znを5at%以上10at%以下含み、さらにMnを5at%以上10at%以下含む。
(4’)Znを4at%以上14at%以下含み、さらにAlを5at%以上10at%以下含む。
(5’)Alを5at%以上10at%以下含み、さらにNiを6at%以上10at%以下含む。 - 基板に積層される積層配線膜であって、前記基板に積層される側の表面に、Tiを含む密着層をさらに有する、請求項1または2に記載の積層配線膜。
- 前記配線層の膜厚が50nm以上1000nm以下であり、前記Cu−X合金層の膜厚が5nm以上200nm以下である、請求項1〜3のいずれか1項に記載の積層配線膜。
- 請求項1記載の積層配線膜と、酸化物半導体を含むことを特徴とする薄膜トランジスタ素子。
- 請求項2記載の積層配線膜と、低温ポリシリコン半導体または酸化物半導体を含むことを特徴とする薄膜トランジスタ素子。
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JP2019189918A (ja) * | 2018-04-26 | 2019-10-31 | 住友金属鉱山株式会社 | 銅合金ターゲット及びその製造方法 |
JP2020012190A (ja) * | 2018-07-20 | 2020-01-23 | 株式会社アルバック | 密着膜用ターゲット、配線層、半導体装置、液晶表示装置 |
WO2020213232A1 (ja) * | 2019-04-19 | 2020-10-22 | 株式会社アルバック | Cu合金ターゲット |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH088498A (ja) * | 1994-06-21 | 1996-01-12 | Canon Inc | 配線構造、その製造方法および該配線構造を用いた画像形成装置 |
JP2010258346A (ja) * | 2009-04-28 | 2010-11-11 | Kobe Steel Ltd | 表示装置およびこれに用いるCu合金膜 |
JP2011048323A (ja) * | 2009-01-16 | 2011-03-10 | Kobe Steel Ltd | 表示装置用Cu合金膜および表示装置 |
JP2012222166A (ja) * | 2011-04-08 | 2012-11-12 | Ulvac Japan Ltd | 配線膜、薄膜トランジスタ、ターゲット、配線膜の形成方法 |
WO2015029286A1 (ja) * | 2013-08-27 | 2015-03-05 | パナソニック株式会社 | 薄膜トランジスタ基板の製造方法及び薄膜トランジスタ基板 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4589835B2 (ja) * | 2005-07-13 | 2010-12-01 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法及び半導体装置 |
JP4835657B2 (ja) * | 2008-07-11 | 2011-12-14 | カシオ計算機株式会社 | 配線電極構造の製造方法 |
JP5308206B2 (ja) * | 2009-03-27 | 2013-10-09 | 株式会社ジャパンディスプレイ | 表示装置製造方法 |
TWI537400B (zh) * | 2011-12-06 | 2016-06-11 | 神戶製鋼所股份有限公司 | 觸控面板感測器用銅合金配線膜及其之製造方法、以及觸控面板感測器、以及濺鍍靶 |
-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH088498A (ja) * | 1994-06-21 | 1996-01-12 | Canon Inc | 配線構造、その製造方法および該配線構造を用いた画像形成装置 |
JP2011048323A (ja) * | 2009-01-16 | 2011-03-10 | Kobe Steel Ltd | 表示装置用Cu合金膜および表示装置 |
JP2010258346A (ja) * | 2009-04-28 | 2010-11-11 | Kobe Steel Ltd | 表示装置およびこれに用いるCu合金膜 |
JP2012222166A (ja) * | 2011-04-08 | 2012-11-12 | Ulvac Japan Ltd | 配線膜、薄膜トランジスタ、ターゲット、配線膜の形成方法 |
WO2015029286A1 (ja) * | 2013-08-27 | 2015-03-05 | パナソニック株式会社 | 薄膜トランジスタ基板の製造方法及び薄膜トランジスタ基板 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019189918A (ja) * | 2018-04-26 | 2019-10-31 | 住友金属鉱山株式会社 | 銅合金ターゲット及びその製造方法 |
JP2020012190A (ja) * | 2018-07-20 | 2020-01-23 | 株式会社アルバック | 密着膜用ターゲット、配線層、半導体装置、液晶表示装置 |
WO2020213232A1 (ja) * | 2019-04-19 | 2020-10-22 | 株式会社アルバック | Cu合金ターゲット |
KR20200123082A (ko) | 2019-04-19 | 2020-10-28 | 가부시키가이샤 알박 | Cu 합금 타깃 |
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