JP2017174990A - 半導体装置の製造方法及び半導体装置 - Google Patents
半導体装置の製造方法及び半導体装置 Download PDFInfo
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Abstract
Description
A−1.半導体装置の構成
図1は、第1実施形態における半導体装置100の構成を模式的に示す断面図である。半導体装置100は、窒化ガリウム(GaN)を用いて形成されたGaN系の半導体装置である。本実施形態では、半導体装置100は、縦型トレンチMOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)である。本実施形態では、半導体装置100は、電力制御に用いられ、パワーデバイスとも呼ばれる。
図2は、第1実施形態における半導体装置100の製造方法を示す工程図である。まず、製造者は、基板110を用意する。基板110は、窒化物半導体により形成されている。本実施形態では、基板110は、窒化ガリウム(GaN)から主に形成されており、ケイ素(Si)をドナー元素として含有するn型半導体である。
<熱処理の条件>
雰囲気ガス:窒素
加熱温度:1150℃
加熱時間:4分
第1実施形態の半導体装置100の製造方法によれば、n型半導体領域形成工程(工程P120)においてp型不純物拡散領域113が形成されるため、トレンチ122底面の外周付近に電界が集中することを緩和できる。この結果として、第1実施形態の半導体装置100の製造方法によれば、半導体装置の耐圧を向上できる。
評価試験には、以下の試料を用いた。試料1から試料4は実施例であり、試料5から試料6は比較例である。具体的には、試験者は、まず、第1実施形態と同様の方法により、n型半導体層112の形成(工程P105)からイオン注入(P125)まで行った。そして、試験者は、試料1から試料4(実施例)においては、さらに熱処理(工程P130)を行った。なお、試験者は、熱処理(工程P130)を行わない試料5(比較例)についても用意した。試料1から試料5は窒化ガリウム(GaN)基板を用いた。
・1回目
加速電圧:50keV
ドーズ量:1×1015cm−2
・2回目
加速電圧:100keV
ドーズ量:1×1015cm−2
<試料1の熱処理条件>
雰囲気ガス:窒素
加熱温度:1150℃
加熱時間:2分
加速電圧:50keV
ドーズ量:5×1014cm−2
<試料2の熱処理条件>
雰囲気ガス:窒素
加熱温度:1150℃
加熱時間:2分
・1回目
加速電圧:50keV
ドーズ量:5×1014cm−2
・2回目
加速電圧:100keV
ドーズ量:5×1014cm−2
<試料3の熱処理条件>
雰囲気ガス:窒素
加熱温度:1150℃
加熱時間:2分
・1回目
加速電圧:50keV
ドーズ量:5×1014cm−2
・2回目
加速電圧:100keV
ドーズ量:5×1014cm−2
<試料4の熱処理条件>
雰囲気ガス:窒素
加熱温度:1150℃
加熱時間:4分
・1回目
加速電圧:50keV
ドーズ量:5×1014cm−2
・2回目
加速電圧:100keV
ドーズ量:5×1014cm−2
・1回目
加速電圧:50keV
ドーズ量:1×1015cm−2
・2回目
加速電圧:100keV
ドーズ量:1×1015cm−2
<試料6の熱処理条件>
雰囲気ガス:窒素
加熱温度:1150℃
加熱時間:2分
本発明は、上述の実施形態や実施例、変形例に限られるものではなく、その趣旨を逸脱しない範囲において種々の構成で実現することができる。例えば、発明の概要の欄に記載した各形態中の技術的特徴に対応する実施形態、実施例、変形例中の技術的特徴は、上述の課題の一部または全部を解決するために、あるいは、上述の効果の一部または全部を達成するために、適宜、差し替えや、組み合わせを行うことが可能である。また、その技術的特徴が本明細書中に必須なものとして説明されていなければ、適宜、削除することが可能である。
110…基板
112…n型半導体層
113…p型不純物拡散領域
114…p型半導体層
116…n型半導体領域
116A…イオン注入領域
121…コンタクトホール
122…トレンチ
124…コンタクトホール
128…リセス
130…絶縁膜
141…ソース電極
142…ゲート電極
143…ドレイン電極
144…ボディ電極
210…膜
220…マスク
240…キャップ膜
Claims (22)
- 半導体装置の製造方法であって、
n型不純物を含み、転位密度が1.0×107cm−2以下であるn型半導体層の上に、p型不純物を含み、転位密度が1.0×107cm−2以下であるp型半導体層を形成する工程と、
前記p型半導体層にn型不純物をイオン注入し、前記イオン注入したn型不純物を活性化させるための熱処理を行うことによって、前記p型半導体層の少なくとも一部にn型半導体領域を形成するn型半導体領域形成工程と、
前記p型半導体層を貫通して、前記n型半導体層に至るまで落ち込んだトレンチを形成する工程と、を備え、
前記n型半導体領域形成工程において、前記n型半導体領域の下方に位置する前記n型半導体層の少なくとも一部に、前記p型半導体層に含まれるp型不純物が拡散するp型不純物拡散領域が形成される、半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
前記n型半導体領域形成工程後において、前記n型半導体層の平均p型不純物濃度が6.0×1014cm−3から8.0×1014cm−3である、半導体装置の製造方法。 - 請求項1又は請求項2に記載の半導体装置の製造方法であって、さらに、
基板の上に、前記n型半導体層を形成する工程を備え、
前記基板は、主に窒化物半導体により形成されている、半導体装置の製造方法。 - 請求項1から請求項3のいずれか1項に記載の半導体装置の製造方法であって、
前記n型半導体層及び前記p型半導体層は、主に、窒化物半導体により形成されている、半導体装置の製造方法。 - 請求項1から請求項4のいずれか1項に記載の半導体装置の製造方法であって、
前記p型不純物は、ベリリウム、マグネシウム、炭素、亜鉛からなる群より選ばれる少なくとも一つを含む、半導体装置の製造方法。 - 請求項1から請求項5のいずれか1項に記載の半導体装置の製造方法であって、
前記n型不純物は、酸素、ケイ素、ゲルマニウムからなる群より選ばれる少なくとも一つを含む、半導体装置の製造方法。 - 請求項1から請求項6のいずれか1項に記載の半導体装置の製造方法であって、
前記熱処理の温度は、1000℃以上1400℃以下である、半導体装置の製造方法。 - 請求項1から請求項7のいずれか1項に記載の半導体装置の製造方法であって、
前記熱処理の温度は、1050℃以上1250℃以下である、半導体装置の製造方法。 - 請求項1から請求項8のいずれか1項に記載の半導体装置の製造方法であって、
前記熱処理の時間は、1分以上10分以下である、半導体装置の製造方法。 - 請求項1から請求項9のいずれか1項に記載の半導体装置の製造方法であって、
前記熱処理の温度は、1分以上5分以下である、半導体装置の製造方法。 - 請求項1から請求項10のいずれか1項に記載の半導体装置の製造方法であって、
前記イオン注入によって、前記p型半導体層の前記イオン注入された面から深さが0.1μmまでの平均n型不純物濃度が1.0×1018cm−3以上となる、半導体装置の製造方法。 - 請求項1から請求項11のいずれか1項に記載の半導体装置の製造方法であって、
前記p型半導体層に含まれる平均p型不純物濃度は、5.0×1017cm−3以上5.0×1018cm−3以下である、半導体装置の製造方法。 - 請求項1から請求項12のいずれか1項に記載の半導体装置の製造方法であって、
前記p型半導体層の厚さは、0.5μm以上2.0μm以下である、半導体装置の製造方法。 - 請求項1から請求項13のいずれか1項に記載の半導体装置の製造方法であって、
前記p型不純物拡散領域における平均n型不純物濃度Ndと平均p型不純物濃度Naとの比(Nd/Na)が20以下である、半導体装置の製造方法。 - 請求項1から請求項14のいずれか1項に記載の半導体装置の製造方法であって、
前記p型不純物拡散領域における平均n型不純物濃度Ndと平均p型不純物濃度Naとの比(Nd/Na)が1.6以上13以下である、半導体装置の製造方法。 - 請求項3に記載の半導体装置の製造方法であって、
前記基板は、転位密度が5.0×106cm−2以下の窒化物半導体から主に形成されている、半導体装置の製造方法。 - 請求項1から請求項16のいずれか1項に記載の半導体装置の製造方法であって、さらに、
前記トレンチの内側に絶縁膜を形成する工程を備える、半導体装置の製造方法。 - 請求項17に記載の半導体装置の製造方法であって、さらに、
前記絶縁膜の上にゲート電極を形成する工程を備える、半導体装置の製造方法。 - 請求項3に記載の半導体装置の製造方法であって、さらに、
前記基板と接するドレイン電極を形成する工程を備える、半導体装置の製造方法。 - 請求項1から請求項19のいずれか1項に記載の半導体装置の製造方法であって、さらに、
前記n型半導体領域と接するソース電極を形成する工程を備える、半導体装置の製造方法。 - 請求項1から請求項20のいずれか1項に記載の半導体装置の製造方法であって、さらに、
前記p型半導体層と接するボディ電極を形成する工程を備える、半導体装置の製造方法。 - 請求項1から請求項21のいずれか1項に記載の半導体装置の製造方法により製造された半導体装置。
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