JP2018166150A - 半導体装置の製造方法及び半導体装置の終端構造 - Google Patents
半導体装置の製造方法及び半導体装置の終端構造 Download PDFInfo
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- JP2018166150A JP2018166150A JP2017062678A JP2017062678A JP2018166150A JP 2018166150 A JP2018166150 A JP 2018166150A JP 2017062678 A JP2017062678 A JP 2017062678A JP 2017062678 A JP2017062678 A JP 2017062678A JP 2018166150 A JP2018166150 A JP 2018166150A
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Abstract
【解決手段】終端部を有する半導体装置の製造方法は、n型不純物を含むn型半導体層の上に、p型不純物を含むp型半導体層を積層する積層工程と、前記終端部に位置するp型半導体層に、n型不純物とp型不純物との少なくとも一方をイオン注入するイオン注入工程と、前記イオン注入した不純物を活性化させるための熱処理を行う熱処理工程と、を備え、前記イオン注入工程及び前記熱処理工程を経ることにより、前記イオン注入がされたp型半導体層の領域の下方であって、前記n型半導体層の少なくとも一部に、前記p型半導体層に含まれるp型不純物が拡散するp型不純物含有領域が形成される。
【選択図】図2
Description
A−1.半導体装置の構成
図1は、第1実施形態における半導体装置100の終端構造付近の構成を模式的に示す断面図である。半導体装置100は、窒化ガリウム(GaN)を用いて形成されたGaN系の半導体装置である。
図2は、第1実施形態における半導体装置100の製造方法を示す工程図である。まず、製造者は、基板110を準備する(工程P100)。本実施形態では、基板110は、窒化ガリウム(GaN)から形成されている。
第1実施形態の半導体装置100の製造方法によれば、n型半導体層112へのp型不純物のイオン注入を行わずに、イオン注入領域形成工程(工程P110)において、終端部に位置するn型半導体層112にp型不純物含有領域118を形成することができる。この結果として、第1実施形態の半導体装置100の製造方法によれば、半導体装置100の耐圧を向上できる。換言すると、第1実施形態の半導体装置100の終端構造によれば、p型不純物含有領域118を備えることにより、半導体装置100の耐圧を向上できる。
図4は、第2実施形態においてイオン注入がされている状態を模式的に示す断面図である。第2実施形態の半導体装置は、第1実施形態の半導体装置100と比較して、さらに、(i)基板110とn型半導体層112との間に、n型半導体層112よりもn型不純物濃度が高いn型半導体層111と、(ii)n型半導体層112の中に、p型不純物含有領域118と交わるように配置されており、n型半導体層112よりもn型不純物濃度が高いn型半導体層113と、(iii)p型半導体層114の上に、n型半導体層112よりもn型不純物濃度が高いn型半導体層115とを備える点で異なるが、それ以外は同じである。なお、n型半導体層113は、p型不純物含有領域118と交わるように図示されているが、p型不純物含有領域118よりも下に配置されていてもよい。また、n型半導体層111と、n型半導体層113と、n型半導体層115との少なくとも一つを備えなくてもよい。n型半導体層111とn型半導体層113とn型半導体層115との不純物濃度は、いずれも1.0×1017cm−3以上であり、厚みは、0.1μmから1μmである。ここで、n型半導体層111は、基板110への電極形成が困難な場合にドレイン電極を形成するためのコンタクト層として利用できる。n型半導体層115は、ソース電極を形成するためのコンタクト層として利用できる。n型半導体層113は、p型不純物含有領域118からの内蔵電位によりn型半導体層112が空乏化して電子が流れにくくなることを抑制できる。
図5は、第3実施形態においてイオン注入がされている状態を模式的に示す断面図である。第3実施形態において、p型不純物含有領域118は、終端部に設けられている。第3実施形態では、p型不純物含有領域118は、トランジスタやダイオードが形成されたアクティブ領域の周りを囲うように多重の環状に設けられおり、本実施形態では、5重の環状に設けられている。なお、5重の環状ではなく、4重以下の環状でもよく、6重以上の環状でもよい。また、p型不純物含有領域118は、環状でなくてもよく、途中に途切れた部分があってもよい。このように多重にすることで、p型不純物含有領域118の数、幅、間隔を変えることができ、所望の特性に応じた終端部を形成することができる。
図6は、第4実施形態においてイオン注入がされている状態を模式的に示す断面図である。第4実施形態は、第3実施形態(図4参照)と比較して、(i)n型半導体層113及びn型半導体層115を備えない点、(ii)マグネシウム(Mg)の変わりにケイ素(Si)がイオン注入されることにより、イオン注入領域116Nの変わりにイオン注入領域116Aを備える点が異なるが、それ以外は同じである。
図8は、第5実施形態においてイオン注入がされている状態を模式的に示す断面図である。第5実施形態は、第4実施形態(図6参照)と比較して、n型半導体層112の間にn型半導体層112よりもn型不純物濃度が大きいn型半導体層113を備える点が異なるが、それ以外は同じである。
図9は、第6実施形態における半導体装置200の構成を模式的に示す断面図である。第6実施形態における半導体装置200は、トレンチゲート構造を有する縦型トレンチMISFET(Metal-Insulator-Semiconductor Field-Effect Transistor)である。なお、「トレンチゲート構造」とは、半導体層にトレンチを形成し、その中にゲート電極の少なくとも一部が埋め込まれている構造を言う。本実施形態の半導体装置200は、電力制御に用いられ、パワーデバイスとも呼ばれる。図9及びそれ以降の図において、素子領域であるアクティブ部R1と、アクティブ部R1の周囲の終端部R2を図示する。
図10は、第7実施形態における半導体装置300の構成を模式的に示す断面図である。第7実施形態の半導体装置300は、第6実施形態の半導体装置200と比較して、終端部において、(i)p型不純物含有領域118Bの変わりにp型不純物含有領域118Dを備え、(ii)イオン注入領域116Bの変わりにイオン注入領域116Dを備える点が異なるが、それ以外は同じである。
図11は、第8実施形態における半導体装置400の構成を模式的に示す断面図である。第8実施形態の半導体装置400は、第6実施形態の半導体装置200と比較して、終端部R2において凹部128を備える点が異なるが、それ以外は同じである。
本発明は、上述の実施形態や実施例に限られるものではなく、その趣旨を逸脱しない範囲において種々の構成で実現することができる。例えば、発明の概要の欄に記載した各形態中の技術的特徴に対応する実施形態、実施例中の技術的特徴は、上述の課題の一部または全部を解決するために、あるいは、上述の効果の一部または全部を達成するために、適宜、差し替えや、組み合わせを行うことが可能である。また、その技術的特徴が本明細書中に必須なものとして説明されていなければ、適宜、削除することが可能である。
110…基板
111…n型半導体層
112…n型半導体層
113…n型半導体層
114…p型半導体層
115…n型半導体層
116…イオン注入領域
116A…イオン注入領域
116B…イオン注入領域
116C…イオン注入領域
116D…イオン注入領域
116N…イオン注入領域
118…p型不純物含有領域
118B…p型不純物含有領域
118C…p型不純物含有領域
118D…p型不純物含有領域
118E…p型不純物含有領域
122…トレンチ
128…凹部
130…絶縁膜
141…ソース電極
144…ボディ電極
200…半導体装置
210…膜
220…マスク
300…半導体装置
400…半導体装置
BS1…底面
BS2…底面
BS3…底面
BS4…底面
R1…アクティブ部
R2…終端部
Claims (4)
- 終端部を有する半導体装置の製造方法であって、
n型不純物を含むn型半導体層の上に、p型不純物を含むp型半導体層を積層する積層工程と、
前記終端部に位置するp型半導体層に、n型不純物とp型不純物との少なくとも一方をイオン注入するイオン注入工程と、
前記イオン注入した不純物を活性化させるための熱処理を行う熱処理工程と、を備え、
前記イオン注入工程及び前記熱処理工程を経ることにより、前記イオン注入がされたp型半導体層の領域の下方であって、前記n型半導体層の少なくとも一部に、前記p型半導体層に含まれるp型不純物が拡散するp型不純物含有領域が形成される、半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、さらに、
前記p型半導体層を貫通して、前記n型半導体層に至るまで落ち込んだトレンチを形成するトレンチ形成工程を備え、
前記n型半導体層と前記p型半導体層との積層の方向において、前記p型不純物含有領域の底面は、前記トレンチの底面と同じか、もしくは前記トレンチの底面より下に位置する、半導体装置の製造方法。 - 請求項1又は請求項2に記載の半導体装置の製造方法であって、
前記n型半導体層及び前記p型半導体層は、III族窒化物により形成されている、半導体装置の製造方法。 - 半導体装置の終端構造であって、
n型不純物を含むn型半導体層と、
前記n型半導体層の上に形成され、p型不純物を含むp型半導体層と、
前記p型半導体層の中に、その他の前記p型半導体層の領域と比較して、n型不純物とp型不純物との少なくとも一方が多い第1の領域を備え、
前記第1の領域の下方であって、前記n型半導体層の中に、前記p型不純物を含むp型不純物含有領域を備える、半導体装置の終端構造。
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