JP2017123378A - Mosfet - Google Patents
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- JP2017123378A JP2017123378A JP2016000568A JP2016000568A JP2017123378A JP 2017123378 A JP2017123378 A JP 2017123378A JP 2016000568 A JP2016000568 A JP 2016000568A JP 2016000568 A JP2016000568 A JP 2016000568A JP 2017123378 A JP2017123378 A JP 2017123378A
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- 239000012535 impurity Substances 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 42
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 33
- 239000011777 magnesium Substances 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 13
- 238000013461 design Methods 0.000 abstract description 8
- 239000000969 carrier Substances 0.000 abstract description 2
- 239000012212 insulator Substances 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 41
- 238000004519 manufacturing process Methods 0.000 description 35
- 238000010438 heat treatment Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
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- 238000004458 analytical method Methods 0.000 description 5
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- 229910052751 metal Inorganic materials 0.000 description 4
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- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
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- 229910052719 titanium Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 Cyclopentadienyl Beryllium Chemical compound 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- DZEYGJJYMLPRLL-UHFFFAOYSA-N cyclopenta-1,3-diene;magnesium Chemical compound [Mg].C1C=CC=C1 DZEYGJJYMLPRLL-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
Description
[先行技術文献]
[特許文献]
[特許文献1] 特開2008−243927号公報
[非特許文献]
[非特許文献1] Semiconductor Science and Technology 25 (2010) 125006 (14pp)
[非特許文献2] 1.8mΩ・cm2 vertical GaN‐based trench metal‐oxide‐semiconductor field‐effect‐transistors on a free‐standing GaN substrate for 1.2‐kV‐class operation, Applied Physics Express 8 054101(2015)
Claims (7)
- 窒化ガリウム基板と、
前記窒化ガリウム基板上に設けられた窒化ガリウムのエピタキシャル層と、
前記エピタキシャル層に直接接して設けられたゲート絶縁膜と、
前記ゲート絶縁膜に接して設けられたゲート電極と
を備え、
前記窒化ガリウム基板は1E+6cm−2以下の転位密度を有し、
前記エピタキシャル層は5E+17cm−3以下のp型不純物の濃度を有する領域を含む
MOSFET。 - 前記エピタキシャル層の前記領域は、5E+16cm−3以下の前記p型の不純物濃度を有する
請求項1に記載のMOSFET。 - 前記p型不純物は、マグネシウムを有する
請求項1または2に記載のMOSFET。 - 前記ゲート絶縁膜は、二酸化シリコンおよび酸化アルミニウムのいずれか、または、二酸化シリコンおよび酸化アルミニウムの積層膜を有する
請求項1から3のいずれか一項に記載のMOSFET。 - 前記エピタキシャル層の前記領域はウェル領域である
請求項1から4のいずれか一項に記載のMOSFET。 - 前記ゲート絶縁膜が前記エピタキシャル層の前記領域上に直接接して設けられる、プレーナーゲート型MOSFETである
請求項1から5のいずれか一項に記載のMOSFET。 - 前記エピタキシャル層は、前記ゲート絶縁膜および前記ゲート電極が設けられるトレンチ部を有し、
前記トレンチ部の側壁に接して設けられた前記ゲート絶縁膜が前記エピタキシャル層の前記領域に直接接して設けられる、トレンチゲート型MOSFETである
請求項1から5のいずれか一項に記載のMOSFET。
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JP2020035868A (ja) * | 2018-08-29 | 2020-03-05 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP2020077828A (ja) * | 2018-11-09 | 2020-05-21 | トヨタ自動車株式会社 | スイッチング素子の製造方法 |
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JP2020188085A (ja) * | 2019-05-13 | 2020-11-19 | ローム株式会社 | 半導体装置 |
CN113611746A (zh) * | 2021-08-04 | 2021-11-05 | 济南市半导体元件实验所 | 快恢复平面栅mosfet器件及其加工工艺 |
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JP6657963B2 (ja) * | 2016-01-05 | 2020-03-04 | 富士電機株式会社 | Mosfet |
JP6683044B2 (ja) * | 2016-07-12 | 2020-04-15 | 富士電機株式会社 | 半導体装置の製造方法 |
SK289027B6 (sk) * | 2017-11-24 | 2023-01-11 | Elektrotechnický ústav SAV, v. v. i. | Vertikálny GaN tranzistor s izolačným kanálom a spôsob jeho prípravy |
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CN107017300A (zh) | 2017-08-04 |
US10069003B2 (en) | 2018-09-04 |
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JP6657963B2 (ja) | 2020-03-04 |
CN107017300B (zh) | 2021-11-16 |
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