JP2017112703A - 半導体装置 - Google Patents
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/26—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to difference between voltages or between currents; responsive to phase angle between voltages or between currents
- H02H3/28—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to difference between voltages or between currents; responsive to phase angle between voltages or between currents involving comparison of the voltage or current values at two spaced portions of a single system, e.g. at opposite ends of one line, at input and output of apparatus
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
- G01R19/1659—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 to indicate that the value is within or outside a predetermined range of values (window)
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H1/00—Details of emergency protective circuit arrangements
- H02H1/0007—Details of emergency protective circuit arrangements concerning the detecting means
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Abstract
【解決手段】第1センス抵抗8は、高電位側領域の電源電位VBの第4端子34と接地電位GNDの第1端子31との間に接続される。第2センス抵抗9は、高電位側領域の基準電位VSの第3端子33と第1端子31との間に接続される。コンパレータ4は、低電位領域に配置され、接地電位GNDを基準電位として動作する。コンパレータ4は、第1センス抵抗8の中間電位点8aと第2センス抵抗9の中間電位点9a間の電圧を所定の基準電圧と比較する。コンパレータ4の出力は、制御回路3およびレベルシフト回路5を介して、上アームのIGBT21を駆動するハイサイド駆動回路1に入力される。コンパレータ4の出力は、下アームのIGBT22を駆動するドライバ回路14に入力される。
【選択図】図1
Description
実施の形態1にかかる半導体装置の構造について説明する。図1は、実施の形態1にかかる半導体装置の回路構成を示す回路図である。ここでは、例えば、出力段となるブリッジ回路20の一相分を構成する2つのIGBT(Insulated Gate Bipolar Transistor:絶縁ゲート型バイポーラトランジスタ)21,22を駆動するにあたって、各電位を検出する場合を例に説明する。IGBT21,22は、高電圧電源Vdcと接地電位GNDとの間に直列接続されている。図1に示す実施の形態1にかかる半導体装置10は、同一の半導体チップ上に、ハイサイド駆動回路1、ローサイド駆動回路2、レベルシフト回路5、第1,2センス抵抗8,9および第1〜4端子31〜34を備える。
次に、実施の形態2にかかる半導体装置の構造について説明する。図5は、実施の形態2にかかる半導体装置の要部の平面レイアウトを示す平面図である。実施の形態2にかかる半導体装置が実施の形態1にかかる半導体装置と異なる点は、次の2点である。1つ目の相違点は、第2耐圧領域43bにも蛇行抵抗素子(以下、第1蛇行抵抗素子とする)210が配置されている点である。2つ目の相違点は、第1耐圧領域43aにおける蛇行抵抗素子(以下、第2蛇行抵抗素子とする)220の蛇行パターンが実施の形態1と異なる点である。
次に、実施の形態3にかかる半導体装置の構造について説明する。図6は、実施の形態3にかかる半導体装置の耐圧構造の平面レイアウトを示す平面図である。実施の形態3にかかる半導体装置が実施の形態1にかかる半導体装置と異なる点は、次の3点である。1つ目の相違点は、第1耐圧領域43aに、抵抗素子55の導電膜層が配置されていない点である。抵抗素子55の薄膜抵抗層57は、一部が開口した略矩形状の平面レイアウトに、かつ高電位側領域41の周囲を同心円状に配置されている(それぞれ内周側から符号57a〜57eを付す)。抵抗素子55の各薄膜抵抗層57は等間隔に配置されている。
2 ローサイド駆動回路
3 制御回路
4 コンパレータ
5 レベルシフト回路
6 nchMOSFET
7 レベルシフト抵抗
8,9 センス抵抗
8a,9a センス抵抗の中間電位点
10 半導体装置
11 電圧電源
12 ブートストラップダイオード
13 ブートストラップコンデンサ
14 ドライバ回路
20 ブリッジ回路
23 上アームのIGBTと下アームのIGBTとの接続点
31 第1(GND)端子
32 第2(Vcc)端子
33 第3(VB)端子
34 第4(VS)端子
41 高電位側領域
42 低電位側領域
43 耐圧構造部
43a 第1耐圧領域
43b 第2耐圧領域
44 寄生ダイオード
45 抵抗性フィールドプレート
50 渦巻き抵抗素子
50a,50b 渦巻き抵抗素子の端部
51,51a〜51d 導電膜層
52,52a〜52e,57,57a〜57e 薄膜抵抗層
55 抵抗素子
60,70,210,220,230 蛇行抵抗素子
60a,60b 蛇行抵抗素子の端部
61,61a〜61e,71,71a〜71e,211,211a〜211e,221,221a〜221e,231,231a〜231e 蛇行抵抗素子の薄膜抵抗直線部
62,62a〜62d,72,72〜72d 蛇行抵抗素子の折り返し点
80 p型半導体基板
81,86,88 p型領域
82,83 n型拡散領域
84 p型拡散領域
85 n+型領域
87,89 p+型領域
90〜92 電極
93,94 絶縁膜
95,96 層間絶縁膜
212,212a〜212d,222,232,232a〜232d 導電膜直線部
E1 ブートストラップコンデンサの電圧
GND 接地電位
IN 制御信号
VB 電源電位
Vcc 電源電圧
VS 上アームのIGBTのエミッタ電位
Vdc 高電圧電源
Claims (4)
- 半導体基板に設けられ、基準電位が変動する第1半導体領域と、
前記半導体基板に設けられ、前記第1半導体領域よりも低電位に固定された第2半導体領域と、
前記第1半導体領域と前記第2半導体領域との間に設けられ、両端がそれぞれ前記第1半導体領域および前記第2半導体領域に電気的に接続され、電位差に応じてそれぞれ異なる信号を出力する2つ以上の抵抗素子と、
を備えることを特徴とする半導体装置。 - 2つ以上の前記抵抗素子は、それぞれ高電位側の電位が異なることを特徴とする請求項1に記載の半導体装置。
- 前記第2半導体領域に配置され、前記抵抗素子の信号を所定信号と比較する比較回路をさらに備え、
前記比較回路によりそれぞれ異なる前記抵抗素子の信号を比較し、
前記比較回路による比較結果に基づいて前記第1半導体領域内の電位差を検出することを特徴とする請求項1または2に記載の半導体装置。 - 高電位側が前記第1半導体領域の前記基準電位に接続された前記抵抗素子と、
高電位側が前記第1半導体領域の最高電位に接続された前記抵抗素子と、
を備え、
前記比較回路により前記第1半導体領域の前記基準電位と前記最高電位との間の電位差を検出することを特徴とする請求項3に記載の半導体装置。
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JP2015244685A JP6597269B2 (ja) | 2015-12-15 | 2015-12-15 | 半導体装置 |
US15/340,885 US9762048B2 (en) | 2015-12-15 | 2016-11-01 | Semiconductor device |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020025158A (ja) * | 2018-08-06 | 2020-02-13 | 富士電機株式会社 | 高耐圧集積回路 |
WO2023223679A1 (ja) * | 2022-05-18 | 2023-11-23 | ローム株式会社 | 半導体装置、スイッチング電源 |
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JP6979937B2 (ja) * | 2018-11-22 | 2021-12-15 | 三菱電機株式会社 | ハイサイド駆動回路 |
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JP2000252426A (ja) * | 1999-02-25 | 2000-09-14 | Hitachi Ltd | 半導体装置及びその製造方法 |
WO2009078274A1 (ja) * | 2007-12-14 | 2009-06-25 | Fuji Electric Device Technology Co., Ltd. | 集積回路および半導体装置 |
JP2010147181A (ja) * | 2008-12-17 | 2010-07-01 | Mitsubishi Electric Corp | 半導体装置 |
US20120187934A1 (en) * | 2011-01-25 | 2012-07-26 | Sanken Electric Co., Ltd. | Dc-dc converter |
JP2012256854A (ja) * | 2011-05-13 | 2012-12-27 | Toyota Central R&D Labs Inc | 横型半導体装置 |
JP2014147189A (ja) * | 2013-01-28 | 2014-08-14 | Fuji Electric Co Ltd | 電力変換装置の駆動回路 |
JP2015035618A (ja) * | 2014-10-16 | 2015-02-19 | 三菱電機株式会社 | 半導体装置 |
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JPH1127950A (ja) | 1997-07-04 | 1999-01-29 | Shibaura Eng Works Co Ltd | パルス幅変調方式負荷駆動回路 |
JP3905981B2 (ja) | 1998-06-30 | 2007-04-18 | 株式会社東芝 | 高耐圧半導体装置 |
DE10023956A1 (de) | 2000-05-16 | 2001-11-22 | Bosch Gmbh Robert | Halbleiter-Leistungsbauelement |
JP4894097B2 (ja) | 2001-06-27 | 2012-03-07 | 富士電機株式会社 | 半導体装置 |
JP5827065B2 (ja) * | 2011-08-08 | 2015-12-02 | スパンション エルエルシー | 半導体装置及び分圧回路 |
JP5786629B2 (ja) | 2011-10-12 | 2015-09-30 | トヨタ自動車株式会社 | 電力変換装置 |
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- 2015-12-15 JP JP2015244685A patent/JP6597269B2/ja active Active
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000252426A (ja) * | 1999-02-25 | 2000-09-14 | Hitachi Ltd | 半導体装置及びその製造方法 |
WO2009078274A1 (ja) * | 2007-12-14 | 2009-06-25 | Fuji Electric Device Technology Co., Ltd. | 集積回路および半導体装置 |
JP2010147181A (ja) * | 2008-12-17 | 2010-07-01 | Mitsubishi Electric Corp | 半導体装置 |
US20120187934A1 (en) * | 2011-01-25 | 2012-07-26 | Sanken Electric Co., Ltd. | Dc-dc converter |
JP2012256854A (ja) * | 2011-05-13 | 2012-12-27 | Toyota Central R&D Labs Inc | 横型半導体装置 |
JP2014147189A (ja) * | 2013-01-28 | 2014-08-14 | Fuji Electric Co Ltd | 電力変換装置の駆動回路 |
JP2015035618A (ja) * | 2014-10-16 | 2015-02-19 | 三菱電機株式会社 | 半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2020025158A (ja) * | 2018-08-06 | 2020-02-13 | 富士電機株式会社 | 高耐圧集積回路 |
JP7210928B2 (ja) | 2018-08-06 | 2023-01-24 | 富士電機株式会社 | 高耐圧集積回路 |
WO2023223679A1 (ja) * | 2022-05-18 | 2023-11-23 | ローム株式会社 | 半導体装置、スイッチング電源 |
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