JP2017092386A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2017092386A JP2017092386A JP2015224138A JP2015224138A JP2017092386A JP 2017092386 A JP2017092386 A JP 2017092386A JP 2015224138 A JP2015224138 A JP 2015224138A JP 2015224138 A JP2015224138 A JP 2015224138A JP 2017092386 A JP2017092386 A JP 2017092386A
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- Japan
- Prior art keywords
- semiconductor chip
- brazing material
- metal layer
- semiconductor
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 130
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000005219 brazing Methods 0.000 claims abstract description 88
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- 238000002844 melting Methods 0.000 claims abstract description 13
- 230000008018 melting Effects 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000011800 void material Substances 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 239000000945 filler Substances 0.000 abstract 4
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000007712 rapid solidification Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- -1 AlGaN Chemical compound 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/005—Soldering by means of radiant energy
- B23K1/0053—Soldering by means of radiant energy soldering by means of I.R.
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Abstract
【解決手段】本発明は、第1加熱部を用いて、ベース部の上面に設けられたロウ材を、前記ベース部の下面から、前記ロウ材が溶融する熱量を供給することで前記ロウ材を溶融する工程と、第2加熱部を用いて半導体チップを非接触で加熱する工程と、前記第2加熱部により加熱された半導体チップを前記溶融したロウ材と接触させることで、前記半導体チップを前記ベース部の上面に搭載する工程と、を有する半導体装置の製造方法を提供することができる。
【選択図】図2B
Description
(2)前記第2加熱部は赤外線照射装置であり、赤外線を照射することにより前記半導体チップを加熱することが好ましい。これにより、ヒータなどを半導体チップに接触させて加熱する場合よりも半導体チップを均一に加熱することができる。
(3)前記半導体チップの下面に金属層が形成され、前記半導体チップを加熱する工程は、前記赤外線照射装置が前記金属層に赤外線を照射することにより前記半導体チップを加熱する工程であることが好ましい。赤外線の吸収率の高い金属層が赤外線により加熱され、金属層から半導体チップに熱が伝導することにより半導体チップが加熱される。
(4)前記半導体チップは、炭化シリコンにより形成された基板を含むことが好ましい。熱伝導率の高い炭化シリコンを用いる場合でも、ボイドの形成を抑制することができる。この結果、放熱性が高く、かつ高出力の動作が可能な半導体装置を形成することができる。
図1Aは実施例1に係る半導体装置の製造方法に用いる製造装置100を例示する断面図である。図1Aに示すように、製造装置100はヒータブロック10および赤外線照射装置12(第2加熱部)を備える。ヒータブロック10は例えば銅(Cu)などの金属で形成されたブロック状の部材であり、内部にヒータ11(第1加熱部)を備える。ヒータ11は例えば電熱線などの発熱素子である。赤外線照射装置12は例えばヒータブロック10の斜め上方に配置され、赤外線を照射することができる。
図1Bは半導体チップ20を例示する断面図である。図1Bに示すように、半導体チップ20の下面には金属層22が形成されている。半導体チップ20は、例えば電界効果トランジスタ(Field Effect Transistor:FET)を含む。半導体チップ20において、例えば基板は厚さ50〜200μmのSiC、FETのチャネル層は窒化ガリウム(GaN)、電子供給層は窒化アルミニウムガリウム(AlGaN)により形成されている。半導体チップ20の長さは例えば7mm以下である。金属層22は例えばAuなどの金属により形成されており、金属層22の厚さは例えば5〜30μmである。
次に実施例1に係る半導体装置の製造方法を説明する。図2Aから図2Cは実施例1に係る半導体装置の製造方法を例示する断面図である。図2Aおよび図2Cにおいては赤外線照射装置12の図示を省略している。図2Dは図2Cの半導体チップ20付近を拡大した断面図である。
比較例について説明する。図3Aは比較例に係る半導体装置の製造方法を例示する断面図である。図3Bは半導体チップ20付近を拡大した断面図である。
11 ヒータ
12 赤外線照射装置
14 ベース部
16、22 金属層
18 ロウ材
20 半導体チップ
24 ボイド
100 製造装置
Claims (4)
- 第1加熱部を用いて、ベース部の上面に設けられたロウ材を、前記ベース部の下面から、前記ロウ材が溶融する熱量を供給することで前記ロウ材を溶融する工程と、
第2加熱部を用いて半導体チップを非接触で加熱する工程と、
前記第2加熱部により加熱された半導体チップを前記溶融したロウ材と接触させることで、前記半導体チップを前記ベース部の上面に搭載する工程と、を有する半導体装置の製造方法。 - 前記第2加熱部は赤外線照射装置であり、赤外線を照射することにより前記半導体チップを加熱する請求項1に記載の半導体装置の製造方法。
- 前記半導体チップの下面に金属層が形成され、
前記半導体チップを加熱する工程は、前記赤外線照射装置が前記金属層に赤外線を照射することにより前記半導体チップを加熱する工程である請求項2に記載の半導体装置の製造方法。 - 前記半導体チップは、炭化シリコンにより形成された基板を含む請求項1から3のいずれか一項に記載の半導体装置の製造方法。
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CN111816614A (zh) * | 2020-02-28 | 2020-10-23 | 浙江集迈科微电子有限公司 | 一种芯片贴装方式 |
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