JP2017085000A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2017085000A JP2017085000A JP2015212974A JP2015212974A JP2017085000A JP 2017085000 A JP2017085000 A JP 2017085000A JP 2015212974 A JP2015212974 A JP 2015212974A JP 2015212974 A JP2015212974 A JP 2015212974A JP 2017085000 A JP2017085000 A JP 2017085000A
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- 229910001128 Sn alloy Inorganic materials 0.000 claims description 9
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 9
- 238000004891 communication Methods 0.000 abstract description 3
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- 230000006866 deterioration Effects 0.000 description 6
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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Abstract
【解決手段】半導体チップを搭載するためのチップ搭載領域を備える実装部と、前記チップ搭載領域を取り囲むように前記実装部に設けられたフレームと、前記チップ搭載領域及び前記フレームによって囲まれた空間を覆うように、前記フレームに接触して配置されたキャップと、前記フレームと前記キャップの接触面の外側で、前記フレームと前記キャップを接合する接合部と、を備える。
【選択図】図1
Description
図1は、本実施の形態に係る半導体装置10の断面図である。半導体装置10は、実装部12とキャップ41を備える。実装部12において、ヒートシンク16の上面に半導体チップ18を搭載するためのチップ搭載領域20を備える。チップ搭載領域20には、半導体チップ18および回路基板22がはんだ24により実装される。チップ搭載領域20の両側には半導体チップ18の入出力信号を伝送するためのフィールドスルー26が配置される。半導体チップ18および回路基板22はボンディングワイヤにより、フィールドスルー26と接続される。フィールドスルー26の上面には、半導体装置10を外部回路と接続するためのリード端子28が配置される。
図2は、本実施の形態に係る半導体装置10の断面図である。本実施の形態では、溝90を上面に設けたフレーム52が備えられる。キャップ42は、溝90の内部に向かって屈曲する外周部62を備える。接合部72は、外周部62の内側面262と溝90との間に設けられる。キャビティ32と接合部72は、接触面82によって隔てられる。ここで、断面視において、フレーム52とキャップ42とが複数面で接する場合は、キャビティ32に隣接する接触面を介してキャビティ32とは反対側に接合部が形成される。すなわち、キャビティ32に隣接するフレーム52とキャップ42の接触面82を介して、空間(キャビティ32)の外側で、接合部72によってフレーム52とキャップ42が接合される。接合部72からは、めっきから生じる酸化膜および接合時の加熱により融解した金錫合金70が異物として発生する可能性がある。本実施の形態では、接合部72から生じる異物が溝90によってトラップされる。このため、実施の形態1で示した効果に加えて、本実施の形態では、フレーム52の外側部分が異物によって汚染されることを抑制することが可能になる。
図3は、本実施の形態に係る半導体装置10の断面図である。本実施の形態は、接合部73が外周部63の外側面163と溝90との間に設けられること以外、実施の形態2と同様である。
図4は、本実施の形態に係る半導体装置10の断面図である。本実施の形態では、段差94を設けたフレーム54が備えられる。段差94は、フレーム54の上面に向かって幅が狭まる。また、段差94はフレーム54の外側に底面194と側面294を備える。また、キャップ44は、底面194に向かって屈曲する外周部64を備える。接合部74は、外周部64の内側面264と側面294との間に設けられる。キャビティ34と接合部74は、接触面84によって隔てられる。
図5は、本実施の形態に係る半導体装置10の断面図である。本実施の形態では、段差95を設けたフレーム55が備えられる。段差95は、フレーム55の上面に向かって幅が狭まる。また、段差95はフレーム55の内側に底面195と側面295を備える。また、キャップ45は、底面195に向かって屈曲する外周部65を備える。接合部75は、外周部65の外側面165と側面295との間に設けられる。キャビティ35と接合部75は、接触面85によって隔てられる。
図6は、本実施の形態に係る半導体装置10の断面図である。本実施の形態では、段差96を設けたフレーム56が備えられる。段差96は、フレーム56の上面に向かって幅が狭まる。また、段差96はフレーム56の外側に底面196と側面296を備える。また、キャップ46は、底面196に向かって屈曲する外周部66を備える。外周部66は、外側に向けて水平方向にさらに屈曲する先端部466を備える。接合部76は、底面196と先端部466との間に設けられる。キャビティ36と接合部76は、接触面86によって隔てられる。
図7は、本実施の形態に係る半導体装置10の断面図である。本実施の形態では、段差97を設けたフレーム57が備えられる。段差97は、フレーム57の上面に向かって幅が狭まる。また、段差97はフレーム57の内側に底面197と側面297を備える。また、キャップ47は、底面197に向かって屈曲する外周部67を備える。外周部67は、外側に向けて水平方向にさらに屈曲する先端部467を備える。接合部77は、底面197と先端部467との間に設けられる。
図8は、本実施の形態に係る半導体装置10の断面図である。本実施の形態では、フレーム58が備えられる。フレーム58には、上面に向かって幅の狭まる傾斜面358が外側に備えられる。キャップ48は、傾斜面358に向かって傾斜する外周部68を備える。接合部78は、外周部68の内側面268と傾斜面358との間に設けられる。キャビティ38と接合部78は、接触面88によって隔てられる。
Claims (9)
- 半導体チップを搭載するためのチップ搭載領域を備える実装部と、
前記チップ搭載領域を取り囲むように前記実装部に設けられたフレームと、
前記チップ搭載領域及び前記フレームによって囲まれた空間を覆うように、前記フレームに接触して配置されたキャップと、
前記フレームと前記キャップの接触面の外側で、前記フレームと前記キャップを接合する接合部と、
を備えることを特徴とする半導体装置。 - 前記接合部は金錫合金で形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記キャップは、前記フレームの外側で前記実装部に向かって屈曲する外周部を備え、
前記接合部は前記フレームと前記外周部の内側面との間に形成されることを特徴とする請求項1または2に記載の半導体装置。 - 前記フレームは、上面に溝が設けられ、
前記キャップは、前記溝の内部に向かって屈曲する外周部を備え、
前記接合部は、前記外周部の内側面と前記溝との間に設けられることを特徴とする請求項1または2に記載の半導体装置。 - 前記フレームは、上面に溝が設けられ、
前記キャップは、前記溝の内部に向かって屈曲する外周部を備え、
前記接合部は、前記外周部の外側面と前記溝との間に設けられることを特徴とする請求項1または2に記載の半導体装置。 - 前記フレームは、上面に向かって幅が狭まり、外側に底面と側面を備えた段差を備え、
前記キャップは、前記底面に向かって屈曲する外周部を備え、
前記接合部は、前記側面と前記外周部の内側面との間に設けられることを特徴とする請求項1または2に記載の半導体装置。 - 前記フレームは、上面に向かって幅が狭まり、内側に底面と側面を備えた段差を備え、
前記キャップは、前記底面に向かって屈曲する外周部を備え、
前記接合部は、前記側面と前記外周部の外側面との間に設けられることを特徴とする請求項1または2に記載の半導体装置。 - 前記フレームは、上面に向かって幅が狭まり、外側に底面と側面を備えた段差を備え、
前記キャップは、前記底面に向かって屈曲する外周部を備え、
前記外周部は、外側に向けて水平方向にさらに屈曲する先端部を備え、
前記接合部は、前記底面と、前記先端部との間に設けられることを特徴とする請求項1または2に記載の半導体装置。 - 前記フレームは、上面に向かって幅の狭まる傾斜面を外側に備え、
前記キャップは、前記傾斜面に向かって傾斜する外周部を備え、
前記接合部は、前記外周部の内側面と前記傾斜面との間に設けられることを特徴とする請求項1または2に記載の半導体装置。
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DE102016219274.4A DE102016219274A1 (de) | 2015-10-29 | 2016-10-05 | Halbleitervorrichtung |
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WO2023199799A1 (ja) * | 2022-04-12 | 2023-10-19 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および電子機器 |
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CN112086404B (zh) * | 2020-09-19 | 2022-07-05 | 广州华创精密科技有限公司 | 高密度线路芯片封装结构及其制作方法 |
CN114496944A (zh) * | 2020-10-26 | 2022-05-13 | 华为技术有限公司 | 减小芯片电磁噪声的散热组件、芯片封装组件及电子设备 |
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