JP2017034218A - 半導体発光装置 - Google Patents

半導体発光装置 Download PDF

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Publication number
JP2017034218A
JP2017034218A JP2015237219A JP2015237219A JP2017034218A JP 2017034218 A JP2017034218 A JP 2017034218A JP 2015237219 A JP2015237219 A JP 2015237219A JP 2015237219 A JP2015237219 A JP 2015237219A JP 2017034218 A JP2017034218 A JP 2017034218A
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JP
Japan
Prior art keywords
semiconductor light
electrode
emitting device
light emitting
phosphor
Prior art date
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Ceased
Application number
JP2015237219A
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English (en)
Japanese (ja)
Other versions
JP2017034218A5 (https=
Inventor
直矢 牛山
Naoya Ushiyama
直矢 牛山
小串　昌弘
Masahiro Ogushi
昌弘 小串
一博 田村
Kazuhiro Tamura
一博 田村
秀徳 江越
Hidenori Ekoshi
秀徳 江越
敏宏 黒木
Toshihiro Kuroki
敏宏 黒木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to US15/060,550 priority Critical patent/US10141482B2/en
Priority to TW105107256A priority patent/TWI663751B/zh
Priority to CN201610140817.8A priority patent/CN106410020B/zh
Publication of JP2017034218A publication Critical patent/JP2017034218A/ja
Publication of JP2017034218A5 publication Critical patent/JP2017034218A5/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Device Packages (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2015237219A 2015-08-03 2015-12-04 半導体発光装置 Ceased JP2017034218A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US15/060,550 US10141482B2 (en) 2015-08-03 2016-03-03 Semiconductor light emitting device
TW105107256A TWI663751B (zh) 2015-08-03 2016-03-09 半導體發光裝置
CN201610140817.8A CN106410020B (zh) 2015-08-03 2016-03-11 半导体发光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015153665 2015-08-03
JP2015153665 2015-08-03

Publications (2)

Publication Number Publication Date
JP2017034218A true JP2017034218A (ja) 2017-02-09
JP2017034218A5 JP2017034218A5 (https=) 2019-01-31

Family

ID=57988939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015237219A Ceased JP2017034218A (ja) 2015-08-03 2015-12-04 半導体発光装置

Country Status (4)

Country Link
US (1) US10141482B2 (https=)
JP (1) JP2017034218A (https=)
CN (1) CN106410020B (https=)
TW (1) TWI663751B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021002158A1 (ja) * 2019-07-04 2021-01-07 日亜化学工業株式会社 発光装置の製造方法及び発光モジュールの製造方法、並びに、発光装置及び発光モジュール

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* Cited by examiner, † Cited by third party
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US10193031B2 (en) * 2016-03-11 2019-01-29 Rohinni, LLC Method for applying phosphor to light emitting diodes and apparatus thereof
DE102016112275B4 (de) * 2016-07-05 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen einer optoelektronischen leuchtvorrichtung und optoelektronische leuchtvorrichtung
JP6665872B2 (ja) * 2018-01-15 2020-03-13 日亜化学工業株式会社 発光装置及び発光装置の製造方法
JP6760324B2 (ja) * 2018-03-27 2020-09-23 日亜化学工業株式会社 発光装置
US10974226B2 (en) * 2018-09-24 2021-04-13 Sabic Global Technologies B.V. Catalytic process for oxidative coupling of methane
CN111628066A (zh) * 2020-06-04 2020-09-04 江西鸿利光电有限公司 一种提升led发光亮度的工艺方法
TWM613115U (zh) * 2021-01-20 2021-06-11 長華科技股份有限公司 複合式導線架及高亮度發光二極體的封裝結構
JP7381903B2 (ja) * 2021-03-31 2023-11-16 日亜化学工業株式会社 発光装置

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JP2001237458A (ja) * 1999-12-22 2001-08-31 Lumileds Lighting Us Llc 増加発光能力を持つｉｉｉ族窒化物ｌｅｄの製造方法
JP2002314143A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
JP2006041479A (ja) * 2004-06-24 2006-02-09 Toyoda Gosei Co Ltd 発光素子およびその製造方法
WO2010123052A1 (ja) * 2009-04-22 2010-10-28 シーシーエス株式会社 発光装置
JP2011066047A (ja) * 2009-09-15 2011-03-31 Sharp Corp 窒化物半導体発光素子
US20110291143A1 (en) * 2008-12-30 2011-12-01 Samsung Led Co., Ltd. Light-emitting-device package and a method for producing the same
WO2013011628A1 (ja) * 2011-07-19 2013-01-24 パナソニック株式会社 発光装置及びその製造方法
JP2013191685A (ja) * 2012-03-13 2013-09-26 Panasonic Corp 発光装置及びそれを用いた照明装置
JP2014103148A (ja) * 2012-11-16 2014-06-05 Nichia Chem Ind Ltd 発光装置
JP2014145021A (ja) * 2013-01-29 2014-08-14 Toray Ind Inc 樹脂組成物およびその硬化物
JP2014241341A (ja) * 2013-06-11 2014-12-25 株式会社東芝 半導体発光装置
JP2015041709A (ja) * 2013-08-22 2015-03-02 株式会社東芝 発光装置

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US6650044B1 (en) 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
JP3707688B2 (ja) 2002-05-31 2005-10-19 スタンレー電気株式会社 発光装置およびその製造方法
JP3655267B2 (ja) * 2002-07-17 2005-06-02 株式会社東芝 半導体発光装置
DE102004034166B4 (de) 2003-07-17 2015-08-20 Toyoda Gosei Co., Ltd. Lichtemittierende Vorrichtung
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
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JP5701523B2 (ja) * 2010-06-22 2015-04-15 日東電工株式会社 半導体発光装置
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JP2001237458A (ja) * 1999-12-22 2001-08-31 Lumileds Lighting Us Llc 増加発光能力を持つｉｉｉ族窒化物ｌｅｄの製造方法
JP2002314143A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
JP2006041479A (ja) * 2004-06-24 2006-02-09 Toyoda Gosei Co Ltd 発光素子およびその製造方法
US20110291143A1 (en) * 2008-12-30 2011-12-01 Samsung Led Co., Ltd. Light-emitting-device package and a method for producing the same
WO2010123052A1 (ja) * 2009-04-22 2010-10-28 シーシーエス株式会社 発光装置
JP2011066047A (ja) * 2009-09-15 2011-03-31 Sharp Corp 窒化物半導体発光素子
WO2013011628A1 (ja) * 2011-07-19 2013-01-24 パナソニック株式会社 発光装置及びその製造方法
JP2013191685A (ja) * 2012-03-13 2013-09-26 Panasonic Corp 発光装置及びそれを用いた照明装置
JP2014103148A (ja) * 2012-11-16 2014-06-05 Nichia Chem Ind Ltd 発光装置
JP2014145021A (ja) * 2013-01-29 2014-08-14 Toray Ind Inc 樹脂組成物およびその硬化物
JP2014241341A (ja) * 2013-06-11 2014-12-25 株式会社東芝 半導体発光装置
JP2015041709A (ja) * 2013-08-22 2015-03-02 株式会社東芝 発光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021002158A1 (ja) * 2019-07-04 2021-01-07 日亜化学工業株式会社 発光装置の製造方法及び発光モジュールの製造方法、並びに、発光装置及び発光モジュール

Also Published As

Publication number Publication date
US10141482B2 (en) 2018-11-27
CN106410020B (zh) 2019-08-09
TWI663751B (zh) 2019-06-21
TW201707241A (zh) 2017-02-16
US20170040499A1 (en) 2017-02-09
CN106410020A (zh) 2017-02-15

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