CN106410020B - 半导体发光装置 - Google Patents

半导体发光装置 Download PDF

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Publication number
CN106410020B
CN106410020B CN201610140817.8A CN201610140817A CN106410020B CN 106410020 B CN106410020 B CN 106410020B CN 201610140817 A CN201610140817 A CN 201610140817A CN 106410020 B CN106410020 B CN 106410020B
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CN
China
Prior art keywords
semiconductor light
electrode
phosphor
resin layer
semiconductor
Prior art date
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Expired - Fee Related
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CN201610140817.8A
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English (en)
Chinese (zh)
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CN106410020A (zh
Inventor
牛山直矢
小串昌弘
田村一博
江越秀德
黑木敏宏
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Toshiba Corp
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Alpha To Kk
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Device Packages (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
CN201610140817.8A 2015-08-03 2016-03-11 半导体发光装置 Expired - Fee Related CN106410020B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015-153665 2015-08-03
JP2015153665 2015-08-03
JP2015237219A JP2017034218A (ja) 2015-08-03 2015-12-04 半導体発光装置
JP2015-237219 2015-12-04

Publications (2)

Publication Number Publication Date
CN106410020A CN106410020A (zh) 2017-02-15
CN106410020B true CN106410020B (zh) 2019-08-09

Family

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CN201610140817.8A Expired - Fee Related CN106410020B (zh) 2015-08-03 2016-03-11 半导体发光装置

Country Status (4)

Country Link
US (1) US10141482B2 (https=)
JP (1) JP2017034218A (https=)
CN (1) CN106410020B (https=)
TW (1) TWI663751B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10193031B2 (en) * 2016-03-11 2019-01-29 Rohinni, LLC Method for applying phosphor to light emitting diodes and apparatus thereof
DE102016112275B4 (de) * 2016-07-05 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen einer optoelektronischen leuchtvorrichtung und optoelektronische leuchtvorrichtung
JP6665872B2 (ja) * 2018-01-15 2020-03-13 日亜化学工業株式会社 発光装置及び発光装置の製造方法
JP6760324B2 (ja) * 2018-03-27 2020-09-23 日亜化学工業株式会社 発光装置
US10974226B2 (en) * 2018-09-24 2021-04-13 Sabic Global Technologies B.V. Catalytic process for oxidative coupling of methane
WO2021002158A1 (ja) * 2019-07-04 2021-01-07 日亜化学工業株式会社 発光装置の製造方法及び発光モジュールの製造方法、並びに、発光装置及び発光モジュール
CN111628066A (zh) * 2020-06-04 2020-09-04 江西鸿利光电有限公司 一种提升led发光亮度的工艺方法
TWM613115U (zh) * 2021-01-20 2021-06-11 長華科技股份有限公司 複合式導線架及高亮度發光二極體的封裝結構
JP7381903B2 (ja) * 2021-03-31 2023-11-16 日亜化学工業株式会社 発光装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1577909A (zh) * 2003-07-17 2005-02-09 丰田合成株式会社 发光器件
US7049159B2 (en) * 2000-10-13 2006-05-23 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6514782B1 (en) * 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
JP2002314143A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
JP3707688B2 (ja) 2002-05-31 2005-10-19 スタンレー電気株式会社 発光装置およびその製造方法
JP3655267B2 (ja) * 2002-07-17 2005-06-02 株式会社東芝 半導体発光装置
JP4857596B2 (ja) * 2004-06-24 2012-01-18 豊田合成株式会社 発光素子の製造方法
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7259402B2 (en) 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
JP2007194525A (ja) 2006-01-23 2007-08-02 Matsushita Electric Ind Co Ltd 半導体発光装置
JP4953846B2 (ja) 2007-02-06 2012-06-13 スタンレー電気株式会社 発光装置およびその製造方法
US8159131B2 (en) 2008-06-30 2012-04-17 Bridgelux, Inc. Light emitting device having a transparent thermally conductive layer
KR20100080423A (ko) * 2008-12-30 2010-07-08 삼성엘이디 주식회사 발광소자 패키지 및 그 제조방법
JPWO2010123052A1 (ja) * 2009-04-22 2012-10-25 シーシーエス株式会社 発光装置
JP2011035198A (ja) 2009-08-03 2011-02-17 Ccs Inc Ｌｅｄ発光デバイスの製造方法
JP2011066047A (ja) * 2009-09-15 2011-03-31 Sharp Corp 窒化物半導体発光素子
KR101055095B1 (ko) 2010-03-09 2011-08-08 엘지이노텍 주식회사 발광장치
JP5701523B2 (ja) * 2010-06-22 2015-04-15 日東電工株式会社 半導体発光装置
US8308982B2 (en) * 2010-08-31 2012-11-13 General Electric Company Alkaline and alkaline earth metal phosphate halides and phosphors
DE102010045403A1 (de) * 2010-09-15 2012-03-15 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
TW201220552A (en) 2010-11-15 2012-05-16 Advanced Optoelectronic Tech LED pakage
JP5840377B2 (ja) 2011-04-14 2016-01-06 日東電工株式会社 反射樹脂シートおよび発光ダイオード装置の製造方法
JPWO2013011628A1 (ja) * 2011-07-19 2015-02-23 パナソニック株式会社 発光装置及びその製造方法
US8917010B2 (en) 2012-02-02 2014-12-23 Citizen Electronics Co., Ltd. Lighting device including phosphor layer and light-transmitting layer that is arranged in contact with the phosphor layer to release static charge to substrate
JP2013191685A (ja) * 2012-03-13 2013-09-26 Panasonic Corp 発光装置及びそれを用いた照明装置
JP6079159B2 (ja) * 2012-11-16 2017-02-15 日亜化学工業株式会社 発光装置
JP6107174B2 (ja) * 2013-01-29 2017-04-05 東レ株式会社 樹脂組成物およびその硬化物
US20140264165A1 (en) 2013-03-15 2014-09-18 Henkel Corporation Oxetane-containing compounds and compositions thereof
JP5931006B2 (ja) 2013-06-03 2016-06-08 日亜化学工業株式会社 発光装置
JP2014241341A (ja) * 2013-06-11 2014-12-25 株式会社東芝 半導体発光装置
JP2015041709A (ja) * 2013-08-22 2015-03-02 株式会社東芝 発光装置
JP2015053361A (ja) 2013-09-06 2015-03-19 株式会社東芝 半導体発光装置及びその製造方法
CN104064635A (zh) 2014-05-04 2014-09-24 易美芯光（北京）科技有限公司 一种垂直结构的led芯片的制备方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7049159B2 (en) * 2000-10-13 2006-05-23 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
CN1577909A (zh) * 2003-07-17 2005-02-09 丰田合成株式会社 发光器件

Also Published As

Publication number Publication date
US10141482B2 (en) 2018-11-27
TWI663751B (zh) 2019-06-21
TW201707241A (zh) 2017-02-16
US20170040499A1 (en) 2017-02-09
JP2017034218A (ja) 2017-02-09
CN106410020A (zh) 2017-02-15

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