201220552 六、發明說明： 【發明所屬之技術領域】 [0001]本發明涉及一種半導體封裝結構 極體封裝結構。 尤其涉及一種發光二 [0002]201220552 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a semiconductor package structure pole package structure. Especially related to a kind of light-emitting [0002]
【先前技術】 —般發光二極體（Li ght . I 从 g t Emitting Diode, LED)封裝 :構是將螢光粉沉積在封裝材料的底部封裝材料直接 盍在發先一極體晶片上，使得螢光粉與發光二極體晶 片直接接觸’由於發先二極體晶片發光時散發大量的熱 [0003] ，螢光粉受高溫的影響，使得發光亮度減弱。 【發明内容】 有鑒於此，有必要提供一種能夠避免螢光粉受高溫影響 的封裝結構。 [0004] 一種發光二極體封裝結構，包括基板、發光二極體晶片 、透明隔熱層和含有螢光粉的封裝層。所述發光二極體 晶片設於所述基板上，並與所述基板電性速接。所述透 Ο 明隔熱層位於所述發光二極體晶片和所述封裝膚之間。 剛上述發光二極體封裝結構巾，由於透明⑯熱層具有優良 的隔熱效果，使得發光二極體晶片發光時發出的熱望被 有效的阻擒，極大的減少了熱量對封装廣中勞光粉的影 響。因此在發光二極體封裝結構中增力透明隔熱層，得 到了能夠避免螢光粉受高溫影響的封装結構° 【實施方式】 [_以下將結合關對本發明作進-步的#細説明° 099139128 表單蝙號A0101 0992068237-0 第3頁/共9頁 201220552 [0007] 請參閱圖1，本發明實施方式提供的一種發光二極體封裝 結構10包括基板11、發光二極體晶片12、透明隔熱層i 3 及封裝層1 4。 [0008] 所述基板11包括第一表面111。所述基板11用於支撐所述 發光二極體晶片12。 [0009] 所述發光二極體晶片12設置在所述基板11的第一表面1U 上’具體地，該發光二極體晶片12可通過黏著膠固定於 第一表面111上。該發光二極體晶片12與所述基板u電性 連接。β亥發光一極體晶片12可以利用覆晶（flip-chip) 或共晶（eutectic)等方式電性連接所述基板11。所述發 光二極體晶片12可以為藍光LED晶片。 [0010] 所述透明隔熱層13覆蓋於所述發光二極體晶片12上，包 覆所述發光二極體晶片12。所述透明隔熱層13的材料為 透明絕熱材料。優選地，所述透明隔熱層丨3的材料為氣 凝膠材料，如二氧化矽氣凝膠或二氧化軚氣凝膠等。這 種氣凝膠材料具有優良的隔熱效果’可以有效的阻擋所 述發光二極體晶片12發出的熱量α所述透明隔熱層13的 厚度可為1-20微米。 [0011] 所述封裝層14覆蓋在所述透明隔熱層13上。所述封裝層 14用於保護發光二極體晶片12免受灰塵、水氣等影響。 所述封裝層14的材質可以為矽膠（silic〇ne)、環氧樹脂 (epoxy)或其組合物。所述封裝層14中還含有螢光粉15 ，所述螢光粉15受激輻射，產生所需顏色的光。所述螢 光粉15可以為石榴石結構的化合物、硫化物、磷化物、 099139128 表單編號A0101 0992068237-0 201220552 氮化物、氮氧化物、吩酸鹽類、神化物、场化物或碌化 物申的一種。 [0012] Ο [0013] [0014] ❹ [0015] [0016] [0017] 本發明實施方式提供的發光二極體封裝結構中，透明隔 熱層13位於發光二極體晶片12與封裝層14之間，由於透 明隔熱層具有優良的隔熱效果，使得發光二極體晶片發 光時發出的熱量向封裝層14傳遞的部分被有效的阻擋， 極大的減少了熱量對封裝層中螢光粉的影響。因此在發 光二極體封裝結構中增加透明隔熱層，得到了能夠避免 螢光粉受高溫影響的封裝結構。 可以理解地，本發明的透明隔熱層13不局限於附圖所示 的包覆所述發光二極體晶月12，螢光粉15也不局限於附 圖所示的分佈於整個封裝層14，也可以根據出光需求螢 光粉15設置於封裝層14的某一部分，透明隔熱層13則對 應螢光粉15設置於發光二極體晶片12與螢光粉15之間即 〇 另外，本領域技術人員還可在本發明精神内做其他變化 ，當然，這些依據本發明精神所做之變化，都應包含在 本發明所要求保護之範圍之内。 【圖式簡單說明】 圖1是本發明實施方式提供的一種發光二極體封裝結構剖 視圖。 【主要元件符號說明】 發光二極體封裝結構：10 基板：11 099139128 表單編號Α0101 第5頁/共9頁 0992068237-0 201220552 [0018] 第一表面：11 1 [0019] 發光二極體晶片：12 [0020] 透明隔熱層：13 [0021] 封裝層：14 [0022] 螢光粉：1 5 099139128 表單編號A0101 第6頁/共9頁 0992068237-0[Prior Art] A general-purpose LED (Li ght. I from gt Emitting Diode, LED) package: a structure in which a fluorescent powder is deposited on a package material at the bottom of a package material directly on a first-pole wafer, so that The phosphor powder is in direct contact with the light-emitting diode wafer. 'Because the first diode wafer emits a large amount of heat when it emits light [0003], the phosphor powder is affected by the high temperature, so that the luminance of the light is weakened. SUMMARY OF THE INVENTION In view of the above, it is necessary to provide a package structure capable of preventing the phosphor powder from being affected by high temperature. [0004] A light emitting diode package structure comprising a substrate, a light emitting diode chip, a transparent heat insulating layer, and an encapsulating layer containing phosphor powder. The light emitting diode chip is disposed on the substrate and electrically connected to the substrate. The transparent insulating layer is between the light emitting diode wafer and the package skin. Just like the above-mentioned light-emitting diode package structure towel, since the transparent 16 thermal layer has excellent heat insulation effect, the heat generated when the light-emitting diode chip emits light is effectively blocked, and the heat is greatly reduced to the package. The effect of the powder. Therefore, in the light emitting diode package structure, the transparent heat insulating layer is strengthened, and a package structure capable of preventing the fluorescent powder from being affected by the high temperature is obtained. [Embodiment] [The following is a detailed description of the invention. ° 099139128 Form bat number A0101 0992068237-0 Page 3 of 9 201220552 [0007] Referring to FIG. 1 , a light emitting diode package structure 10 according to an embodiment of the present invention includes a substrate 11 and a light emitting diode chip 12 . Transparent insulating layer i 3 and encapsulation layer 14. The substrate 11 includes a first surface 111. The substrate 11 is used to support the light emitting diode chip 12. The light emitting diode chip 12 is disposed on the first surface 1U of the substrate 11. Specifically, the light emitting diode chip 12 may be fixed on the first surface 111 by an adhesive. The LED wafer 12 is electrically connected to the substrate u. The β-light-emitting one-pole wafer 12 can be electrically connected to the substrate 11 by means of flip-chip or eutectic. The light-emitting diode wafer 12 can be a blue LED wafer. [0010] The transparent heat insulation layer 13 covers the light emitting diode chip 12 and covers the light emitting diode chip 12. The material of the transparent heat insulating layer 13 is a transparent heat insulating material. Preferably, the material of the transparent heat insulating layer 3 is an aerogel material such as cerium oxide aerogel or cerium oxide aerogel. The aerogel material has an excellent heat insulating effect, which can effectively block the heat emitted by the light-emitting diode wafer 12. The transparent heat insulating layer 13 can have a thickness of 1 to 20 μm. [0011] The encapsulation layer 14 is covered on the transparent heat insulation layer 13. The encapsulation layer 14 serves to protect the LED wafer 12 from dust, moisture, and the like. The material of the encapsulation layer 14 may be silica gel, epoxy or a combination thereof. The encapsulating layer 14 further contains phosphor powder 15, which is stimulated to generate light of a desired color. The phosphor powder 15 may be a garnet structure compound, sulfide, phosphide, 099139128 Form No. A0101 0992068237-0 201220552 Nitride, oxynitride, phenate, deuteration, field compound or crystallization One. [0012] [0014] In the light emitting diode package structure provided by the embodiment of the present invention, the transparent heat insulating layer 13 is located on the light emitting diode chip 12 and the package layer 14 Between the transparent insulating layer and the transparent heat insulating layer, the portion of the heat emitted by the light emitting diode to the encapsulating layer 14 is effectively blocked, which greatly reduces the amount of heat in the encapsulating layer. Impact. Therefore, a transparent heat insulating layer is added to the light emitting diode package structure, and a package structure capable of avoiding the high temperature of the phosphor powder is obtained. It can be understood that the transparent heat insulation layer 13 of the present invention is not limited to the light-emitting diode crystal 12 shown in the drawing, and the phosphor powder 15 is not limited to the entire package layer as shown in the drawing. 14. The phosphor powder 15 may be disposed on a portion of the encapsulation layer 14 according to the light-emitting requirement, and the transparent heat-insulating layer 13 is disposed between the LED chip 12 and the phosphor powder 15 corresponding to the phosphor powder 15 . Other variations may be made by those skilled in the art in the spirit of the invention, and it is to be understood that these changes are intended to be included within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a light emitting diode package structure according to an embodiment of the present invention. [Description of main component symbols] LED package structure: 10 Substrate: 11 099139128 Form No. 1010101 Page 5 / Total 9 Page 0992068237-0 201220552 [0018] First surface: 11 1 [0019] LED chip: 12 [0020] Transparent heat insulation layer: 13 [0021] Encapsulation layer: 14 [0022] Fluorescent powder: 1 5 099139128 Form number A0101 Page 6 / Total 9 page 0992068237-0