JP2014022435A - Light-emitting device and method for manufacturing the same - Google Patents

Light-emitting device and method for manufacturing the same Download PDF

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JP2014022435A
JP2014022435A JP2012157412A JP2012157412A JP2014022435A JP 2014022435 A JP2014022435 A JP 2014022435A JP 2012157412 A JP2012157412 A JP 2012157412A JP 2012157412 A JP2012157412 A JP 2012157412A JP 2014022435 A JP2014022435 A JP 2014022435A
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led chip
dam material
substrate
emitting device
light
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Yosuke Tsuchiya
陽祐 土屋
Shota Shimonishi
正太 下西
Hiroyuki Tajima
博幸 田嶌
Akira Sengoku
昌 仙石
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Toyoda Gosei Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device having a dam material and capable of being downsized, and a method for manufacturing the same.SOLUTION: A method for manufacturing a light-emitting device 10 according to an embodiment of this invention includes the steps of: mounting LED chips 12 on a substrate 11; forming a translucent dam material which surrounds the LED chip 12 on the substrate 11 so as to come into contact with a part of the LED chip 12; and forming a sealing resin 14 which seals the LED chip 12 inside the dam material 13 on the substrate 11.

Description

本発明は、発光装置及びその製造方法に関する。   The present invention relates to a light emitting device and a method for manufacturing the same.

従来の発光装置として、基板上にＬＥＤチップを取り囲むダム材を設け、ダム材の内側にＬＥＤチップを封止する封止樹脂を形成したＬＥＤ装置が知られている（例えば、特許文献１参照）。   As a conventional light emitting device, there is known an LED device in which a dam material surrounding an LED chip is provided on a substrate, and a sealing resin for sealing the LED chip is formed inside the dam material (see, for example, Patent Document 1). .

特許文献１に記載された発光装置によれば、ダム材の内側に液状の樹脂を充填し、加熱して硬化させることにより、封止樹脂を形成することができる。また、ダム材は二酸化チタン等の反射性粒子を含むため、ＬＥＤチップから発せられる光を反射するリフレクターとしての機能も有する。   According to the light-emitting device described in Patent Document 1, a sealing resin can be formed by filling a liquid resin inside the dam material and curing it by heating. Moreover, since the dam material contains reflective particles such as titanium dioxide, it also has a function as a reflector that reflects light emitted from the LED chip.

特開２０１２−５４３８３号公報JP 2012-54383 A

本発明の目的の一つは、ダム材を有する小型化可能な発光装置及びその製造方法を提供することにある。   One of the objects of the present invention is to provide a light-emitting device having a dam material that can be miniaturized and a method for manufacturing the same.

上記目的を達成するため、本発明の一態様において、基板上にＬＥＤチップを搭載する工程と、前記基板上に、前記ＬＥＤチップの一部に接するように、前記ＬＥＤチップを囲む透光性を有するダム材を形成する工程と、前記基板上の前記ダム材の内側に、前記ＬＥＤチップを封止する封止樹脂を形成する工程と、を含む、発光装置の製造方法を提供する。   In order to achieve the above object, in one embodiment of the present invention, a step of mounting an LED chip on a substrate, and a light-transmitting property surrounding the LED chip so as to be in contact with a part of the LED chip on the substrate are provided. There is provided a method for manufacturing a light emitting device, comprising: a step of forming a dam material having; and a step of forming a sealing resin for sealing the LED chip inside the dam material on the substrate.

上記発光装置の製造方法において、前記ダム材は、前記ＬＥＤチップの上面に接するように形成されることが好ましい。   In the method for manufacturing the light emitting device, the dam material is preferably formed so as to be in contact with an upper surface of the LED chip.

上記発光装置の製造方法において、前記ダム材及び前記封止樹脂は蛍光体を含んでもよい。   In the method for manufacturing the light emitting device, the dam material and the sealing resin may include a phosphor.

また、本発明の他の態様において、基板と、前記基板上に搭載されたＬＥＤチップと、前記基板上において、前記ＬＥＤチップの一部に接するように前記ＬＥＤチップを囲む、透光性を有するダム材と、前記基板上の前記ダム材の内側の、前記ＬＥＤチップを封止する封止樹脂と、を有する発光装置を提供する。   In another aspect of the present invention, the substrate, the LED chip mounted on the substrate, and the substrate have translucency surrounding the LED chip so as to be in contact with a part of the LED chip. There is provided a light emitting device having a dam material and a sealing resin for sealing the LED chip inside the dam material on the substrate.

上記発光装置において、前記ダム材は、前記ＬＥＤチップの上面に接することが好ましい。   In the light emitting device, the dam material is preferably in contact with an upper surface of the LED chip.

上記発光装置において、前記ダム材及び前記封止樹脂は蛍光体を含んでもよい。   In the light emitting device, the dam material and the sealing resin may include a phosphor.

本発明によれば、ダム材を有する小型化可能な発光装置及びその製造方法を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the light-emitting device which has a dam material and can be reduced in size, and its manufacturing method can be provided.

図１は、実施の形態に係る発光装置の上面図である。FIG. 1 is a top view of a light emitting device according to an embodiment. 図２は、図１の線分Ａ−Ａに沿った発光装置の垂直断面図である。FIG. 2 is a vertical sectional view of the light emitting device along the line AA in FIG. 図３（ａ）〜（ｃ）は、実施の形態に係る発光装置の製造工程を表す垂直断面図である。3A to 3C are vertical cross-sectional views illustrating manufacturing steps of the light emitting device according to the embodiment.

〔実施の形態〕
図１は、実施の形態に係る発光装置の上面図である。図２は、図１の線分Ａ−Ａに沿った発光装置の垂直断面図である。 Embodiment
FIG. 1 is a top view of a light emitting device according to an embodiment. FIG. 2 is a vertical sectional view of the light emitting device along the line AA in FIG.

発光装置１０は、基板１１と、基板１１上に搭載されたＬＥＤチップ１２と、基板１１上において、ＬＥＤチップ１２の一部に接するようにＬＥＤチップ１２を囲む、透光性を有するダム材１３と、基板１１上のダム材１３の内側の、ＬＥＤチップ１２を封止する封止樹脂１４と、を有する。なお、図１においては、封止樹脂１４の図示を省略する。   The light emitting device 10 includes a substrate 11, an LED chip 12 mounted on the substrate 11, and a translucent dam material 13 surrounding the LED chip 12 so as to be in contact with a part of the LED chip 12 on the substrate 11. And a sealing resin 14 for sealing the LED chip 12 inside the dam material 13 on the substrate 11. In FIG. 1, illustration of the sealing resin 14 is omitted.

基板１１は、例えば、酸化アルミニウム（アルミナ）や窒化アルミニウム等のセラミックや、アルミニウム等の金属からなる。   The substrate 11 is made of, for example, a ceramic such as aluminum oxide (alumina) or aluminum nitride, or a metal such as aluminum.

ＬＥＤチップ１２は、フリップチップ型のＬＥＤチップであり、チップ基板１２ａ及び結晶層１２ｂを有する。チップ基板１２ａは、例えば、サファイア基板である。結晶層１２ｂは、チップ基板１２ａ上にエピタキシャル結晶成長により形成された層であり、ｎ型半導体層とｐ型半導体層に挟まれた発光層を有する。   The LED chip 12 is a flip chip type LED chip, and includes a chip substrate 12a and a crystal layer 12b. The chip substrate 12a is, for example, a sapphire substrate. The crystal layer 12b is a layer formed by epitaxial crystal growth on the chip substrate 12a, and has a light emitting layer sandwiched between an n-type semiconductor layer and a p-type semiconductor layer.

結晶層１２ｂのｎ型半導体層とｐ型半導体層は、それぞれ導電バンプや導電ペースト等の接続部１５を介して基板１１の図示しない導電パターンに接続される。ＬＥＤチップ１２はフリップチップ型に限定されず、例えばフェイスアップ型であってもよい。また、接続部１５の代わりにワイヤーにより基板１１の導電パターンと接続されてもよい。   The n-type semiconductor layer and the p-type semiconductor layer of the crystal layer 12b are connected to a conductive pattern (not shown) of the substrate 11 through connection portions 15 such as conductive bumps and conductive paste. The LED chip 12 is not limited to the flip chip type, and may be a face-up type, for example. Further, instead of the connection portion 15, the conductive pattern of the substrate 11 may be connected by a wire.

ダム材１３は、例えば、シリコーン系樹脂やエポキシ系樹脂等の高粘度の樹脂からなる。ダム材１３の材料となる樹脂は自身で形状を維持しなければならないため、封止樹脂１４の材料となる樹脂よりも粘度が高く、組成や添加物が異なる。例えば、封止樹脂１４の材料となる樹脂よりも高いチキソ性を有していることが好ましく、具体的には、アエロジル等のチキソ性付与剤の含有量が封止樹脂１４の材料となる樹脂よりも多いことが好ましい。ダム材１３の平面形状は、多角形環や円環の環形状である。   The dam material 13 is made of a high viscosity resin such as a silicone resin or an epoxy resin, for example. Since the resin used as the material of the dam material 13 must maintain its own shape, the viscosity is higher than that of the resin used as the material of the sealing resin 14 and the composition and additives are different. For example, it is preferable that the resin has a higher thixotropy than the resin used as the material of the sealing resin 14. Specifically, the resin whose content of the thixotropic agent such as aerosil is used as the material of the sealing resin 14. It is preferable that there are more. The planar shape of the dam material 13 is a polygonal ring or an annular ring shape.

ダム材１３は、二酸化チタン等の反射性粒子を含まず、透光性を有する。また、透光性が損なわれない範囲の量の反射性粒子をダム材１３に含めることにより、ダム材１３の配光特性を制御してもよい。   The dam material 13 does not contain reflective particles such as titanium dioxide and has translucency. Further, the light distribution characteristics of the dam material 13 may be controlled by including the reflective particles in an amount that does not impair the translucency in the dam material 13.

また、ダム材１３は、ＬＥＤチップ１２の一部に接するように設置されるため、ＬＥＤチップ１２から間隔をおいて設置される場合と比較して、平面方向の大きさが小さい。さらに、よりＬＥＤチップ１２との重なりを大きくして小型化するために、ダム材１３はＬＥＤチップ１２の上面に接することがこのましい。ここで、ＬＥＤチップ１２の上面とはＬＥＤチップ１２の基板１１と反対側の面（図２の上側の面）であり、チップ基板１２ａの基板１１と反対側の面である。ＬＥＤチップ１２がフェイスアップ型であり、結晶層１２ｂが上側にある場合は、ＬＥＤチップ１２の上面は、結晶層１２ｂの基板１１と反対側の面である。   Moreover, since the dam material 13 is installed so as to be in contact with a part of the LED chip 12, the size in the plane direction is small as compared with the case where the dam material 13 is installed at a distance from the LED chip 12. Furthermore, in order to further reduce the size by increasing the overlap with the LED chip 12, the dam material 13 is preferably in contact with the upper surface of the LED chip 12. Here, the upper surface of the LED chip 12 is a surface opposite to the substrate 11 of the LED chip 12 (an upper surface in FIG. 2), and is a surface opposite to the substrate 11 of the chip substrate 12a. When the LED chip 12 is a face-up type and the crystal layer 12b is on the upper side, the upper surface of the LED chip 12 is the surface opposite to the substrate 11 of the crystal layer 12b.

なお、ダム材１３は透光性を有するため、ＬＥＤチップ１２から発せられる光を妨げずに透過させることができる。このため、ダム材１３がＬＥＤチップ１２に接することによる発光装置１０の発光量の低下はほとんどない。   In addition, since the dam material 13 has translucency, the light emitted from the LED chip 12 can be transmitted without being disturbed. For this reason, there is almost no decrease in the light emission amount of the light emitting device 10 due to the dam material 13 coming into contact with the LED chip 12.

封止樹脂１４は、ＬＥＤチップ１２を封止する部材であり、透光性を有する。封止樹脂１４は、例えば、シリコーン系樹脂やエポキシ系樹脂等の樹脂からなり、蛍光体を含んでもよい。封止樹脂１４に含まれる蛍光体は、ＬＥＤチップ１２から発せられる光のエネルギーを吸収し、蛍光を発する。ＬＥＤチップ１２から発せられて封止樹脂１４を透過して外部へ射出される光の色と、蛍光体から発せられる蛍光の色との混色が発光装置１０の発光色となる。例えば、ＬＥＤチップ１２の発光色が青色であり、蛍光体の発光色が黄色である場合は、発光装置１０の発光色は白色になる。   The sealing resin 14 is a member that seals the LED chip 12 and has translucency. The sealing resin 14 is made of, for example, a resin such as a silicone resin or an epoxy resin, and may include a phosphor. The phosphor contained in the sealing resin 14 absorbs the energy of light emitted from the LED chip 12 and emits fluorescence. A color mixture of the color of light emitted from the LED chip 12 and transmitted through the sealing resin 14 to the outside and the color of fluorescence emitted from the phosphor becomes the emission color of the light emitting device 10. For example, when the emission color of the LED chip 12 is blue and the emission color of the phosphor is yellow, the emission color of the light emitting device 10 is white.

以下に、蛍光体材料の例を挙げる。青色蛍光体として、ＢａＭｇＡｌ１０Ｏ１７：Ｅｕ等のＢＡＭ系蛍光体を用いることができる。青緑〜橙色蛍光体として、（Ｙ，Ｇｄ）３Ａｌ５Ｏ１２：Ｃｅ等のガーネット系蛍光体、（Ｂａ，Ｓｒ）２ＳｉＯ４：Ｅｕ，（Ｂａ，Ｓｒ）３ＳｉＯ５：Ｅｕ等のオキシ・オルト・シリケート系蛍光体、又は（Ｂａ，Ｓｒ，Ｃａ）Ｓｉ２Ｏ２Ｎ２：Ｅｕ等のＳＩＯＮ系蛍光体を用いることができる。黄色蛍光体として、α−Ｓｉ３Ｎ４を母体としたα−サイアロン（Ｃａ−ＳｉＡｌＯＮ：Ｅｕ）を用いることができる。緑色蛍光体として、β−Ｓｉ３Ｎ４を母体としたＳｉＡｌＯＮ：Ｅｕを用いることができる。赤色蛍光体として、ＣａＡｌＳｉＮ３：Ｅｕ等のＣＡＳＮ系蛍光体を用いることができる。 Examples of phosphor materials are given below. As the blue phosphor, a BAM phosphor such as BaMgAl 10 O 17 : Eu can be used. As the blue-green to orange phosphors, garnet-based phosphors such as (Y, Gd) 3 Al 5 O 12 : Ce, (Ba, Sr) 2 SiO 4 : Eu, (Ba, Sr) 3 SiO 5 : Eu, etc. Oxy-ortho-silicate phosphors or SION phosphors such as (Ba, Sr, Ca) Si 2 O 2 N 2 : Eu can be used. As the yellow phosphor, α-sialon (Ca—SiAlON: Eu) based on α-Si 3 N 4 can be used. As the green phosphor, SiAlON: Eu based on β-Si 3 N 4 can be used. As the red phosphor, a CASN phosphor such as CaAlSiN 3 : Eu can be used.

封止樹脂１４が蛍光体を含む場合は、ダム材１３も蛍光体を含むことが好ましい。封止樹脂１４に含まれる蛍光体の蛍光色とダム材１３に含まれる蛍光体の蛍光色は、同じであっても、異なっていてもよい。また、封止樹脂１４に含まれる蛍光体とダム材１３に含まれる蛍光体は、蛍光色が同じで、ＬＥＤチップ１２から発せられる光に対する励起効率等の特性が異なっていてもよい。例えば、封止樹脂１４とダム材１３に同種の蛍光体を同じ濃度で含めることができる。   When the sealing resin 14 includes a phosphor, the dam material 13 preferably also includes the phosphor. The fluorescent color of the phosphor contained in the sealing resin 14 and the fluorescent color of the phosphor contained in the dam material 13 may be the same or different. Further, the phosphor contained in the sealing resin 14 and the phosphor contained in the dam material 13 may have the same fluorescent color and different characteristics such as excitation efficiency for light emitted from the LED chip 12. For example, the same kind of phosphor can be included in the sealing resin 14 and the dam material 13 at the same concentration.

ダム材１３と封止樹脂１４とで蛍光体の種類及びその含有量を変化させることにより、視野角に依らず、均一な白色光を得ることができ、また、意図的に、視野角に応じて異なる色温度の白色光を得ることもできる。   By changing the type and content of the phosphor between the dam material 13 and the sealing resin 14, it is possible to obtain uniform white light regardless of the viewing angle, and intentionally according to the viewing angle. It is also possible to obtain white light with different color temperatures.

以下に、発光装置１０の製造方法の一例を示す。   Below, an example of the manufacturing method of the light-emitting device 10 is shown.

図３（ａ）〜（ｃ）は、実施の形態に係る発光装置１０の製造工程を表す垂直断面図である。   3A to 3C are vertical cross-sectional views illustrating manufacturing steps of the light emitting device 10 according to the embodiment.

まず、図３（ａ）に示される様に、基板１１上にＬＥＤチップ１２を搭載する。ＬＥＤチップ１２は、接続部１５を介して基板１１の導電パターンに接続される。   First, as shown in FIG. 3A, the LED chip 12 is mounted on the substrate 11. The LED chip 12 is connected to the conductive pattern of the substrate 11 via the connection portion 15.

次に、図３（ｂ）に示される様に、基板１１上に、ＬＥＤチップ１２の一部に接するように、ＬＥＤチップ１２を囲む透光性を有するダム材１３を形成する。このとき、ダム材１３はＬＥＤチップ１２の上面に接することが好ましい。ダム材１３は、例えば、ディスペンサにより液状の高粘度樹脂を環状に吐出した後、その樹脂を加熱して硬化させることにより形成される。   Next, as shown in FIG. 3B, a translucent dam material 13 surrounding the LED chip 12 is formed on the substrate 11 so as to be in contact with a part of the LED chip 12. At this time, the dam material 13 is preferably in contact with the upper surface of the LED chip 12. The dam material 13 is formed, for example, by discharging a liquid high-viscosity resin in a ring shape with a dispenser and then curing the resin by heating.

次に、図３（ｃ）に示される様に、基板１１上のダム材１３の内側に、ＬＥＤチップ１２を封止する封止樹脂１４を形成する。封止樹脂１４は、例えば、ディスペンサにより液状の樹脂をダム材１３の内側の領域に吐出し、その樹脂を加熱して硬化させることにより形成される。   Next, as shown in FIG. 3C, a sealing resin 14 for sealing the LED chip 12 is formed inside the dam material 13 on the substrate 11. The sealing resin 14 is formed, for example, by discharging a liquid resin to a region inside the dam member 13 with a dispenser and heating and curing the resin.

（実施の形態の効果）
実施の形態によれば、ダム材１３をＬＥＤチップ１２に接するように形成するため、ダム材１３の平面方向の大きさが小さく、発光装置１０を小型化することができる。 (Effect of embodiment)
According to the embodiment, since the dam material 13 is formed so as to be in contact with the LED chip 12, the size of the dam material 13 in the planar direction is small, and the light emitting device 10 can be downsized.

本発明は、上記の実施の形態に限定されず、発明の主旨を逸脱しない範囲内において種々変形実施が可能である。   The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the invention.

また、上記の実施の形態は特許請求の範囲に係る発明を限定するものではない。また、実施の形態の中で説明した特徴の組合せの全てが発明の課題を解決するための手段に必須であるとは限らない点に留意すべきである。   Moreover, said embodiment does not limit the invention which concerns on a claim. In addition, it should be noted that not all the combinations of features described in the embodiments are essential to the means for solving the problems of the invention.

１０ 発光装置
１１ 基板
１２ ＬＥＤチップ
１３ ダム材
１４ 封止樹脂 DESCRIPTION OF SYMBOLS 10 Light-emitting device 11 Board | substrate 12 LED chip 13 Dam material 14 Sealing resin

Claims (6)

基板上にＬＥＤチップを搭載する工程と、
前記基板上に、前記ＬＥＤチップの一部に接するように、前記ＬＥＤチップを囲む透光性を有するダム材を形成する工程と、
前記基板上の前記ダム材の内側に、前記ＬＥＤチップを封止する封止樹脂を形成する工程と、
を含む、発光装置の製造方法。 Mounting the LED chip on the substrate;
Forming a translucent dam material surrounding the LED chip on the substrate so as to be in contact with a part of the LED chip;
Forming a sealing resin for sealing the LED chip inside the dam material on the substrate;
A method for manufacturing a light emitting device, comprising: 前記ダム材は、前記ＬＥＤチップの上面に接するように形成される、
請求項１に記載の発光装置の製造方法。 The dam material is formed in contact with the upper surface of the LED chip.
The manufacturing method of the light-emitting device of Claim 1. 前記ダム材及び前記封止樹脂は蛍光体を含む、
請求項１又は２に記載の発光装置の製造方法。 The dam material and the sealing resin include a phosphor,
The manufacturing method of the light-emitting device of Claim 1 or 2. 基板と、
前記基板上に搭載されたＬＥＤチップと、
前記基板上において、前記ＬＥＤチップの一部に接するように前記ＬＥＤチップを囲む、透光性を有するダム材と、
前記基板上の前記ダム材の内側の、前記ＬＥＤチップを封止する封止樹脂と、
を有する発光装置。 A substrate,
An LED chip mounted on the substrate;
On the substrate, a dam material having translucency surrounding the LED chip so as to be in contact with a part of the LED chip;
A sealing resin for sealing the LED chip inside the dam material on the substrate;
A light emitting device. 前記ダム材は、前記ＬＥＤチップの上面に接する、
請求項４に記載の発光装置。 The dam material is in contact with the upper surface of the LED chip.
The light emitting device according to claim 4. 前記ダム材及び前記封止樹脂は蛍光体を含む、
請求項４又は５に記載の発光装置。 The dam material and the sealing resin include a phosphor,
The light emitting device according to claim 4 or 5.
JP2012157412A 2012-07-13 2012-07-13 Light-emitting device and method for manufacturing the same Pending JP2014022435A (en)

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