JP2014075571A - Light-emitting device and process of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device that has suitable heat-radiation characteristics and is improved in light extraction efficiency.SOLUTION: A light-emitting device 1 includes: a nitride semiconductor light-emitting element 20 containing a substrate 21 mounted on a base 2 and a plurality of nitride semiconductor layers; and a first resin member 4, disposed at a side of the nitride semiconductor light-emitting element 20, containing phosphor having a function of converting a wavelength of light to a longer side, and having refractive index equal to or lower than that of the substrate 21.

Description

  The present invention relates to a light emitting device and a method for manufacturing the same.

  Conventional fluorescent tubes and heating bulbs used as illumination light sources and liquid crystal backlight light sources are replaced with light emitting devices including semiconductor light emitting elements from the viewpoint of energy saving, space saving, and long life. As a light-emitting device including a semiconductor light-emitting element, a white LED (Light Emitting Diode) in which a gallium nitride-based semiconductor light-emitting element and a phosphor are combined, which can obtain advantages of high efficiency and low cost, is often used.

  In particular, in recent years, mounting on devices such as mobile devices and edge-type backlight TVs has progressed, and there is a demand for light-emitting devices with lower cost, compactness, and high brightness. For this reason, it is desirable to improve the light extraction efficiency from the light emitting device by increasing the number of light emitting elements mounted on the light emitting device. The light extraction efficiency includes, for example, a first light extraction efficiency for extracting light emitted inside the light emitting element to the outside of the light emitting element, and a first light extraction efficiency for extracting light extracted outside the light emitting element to the outside of the light emitting device further including a sealing resin. It can be divided into two light extraction efficiencies.

In general, a gallium nitride based semiconductor light emitting device has an n-GaN layer, a light emitting layer, a p-GaN layer, an ITO layer, a SiO ₂ layer and an electrode part (p-side electrode and n-side electrode) stacked on a sapphire substrate. Formed. The substrate may be SiC, GaN, or the like. The light generated in the light emitting layer is emitted from the uppermost SiO ₂ layer of the light emitting element and the side surfaces of each layer.

  However, the refractive index of any layer of the light emitting element is as high as 2.5 for the GaN layer and 1.78 for the sapphire substrate. When a light emitting element is sealed with a silicone resin (refractive index˜1.4) generally used as a sealing resin in a semiconductor light emitting device, the total reflection critical angle of the interface is 34 at the GaN / silicone resin interface due to the difference in refractive index. °, 52 ° at the sapphire / silicone resin interface, and most of the light is confined. Since the confined light is reabsorbed inside the light emitting element (light emitting layer, p-side electrode and n-side electrode) or the substrate surface in contact with the bottom face of the light emitting element, the first light extraction efficiency is lowered as a result. Therefore, a conventional technique for improving the light extraction efficiency from the light emitting device in which the light emitting element is sealed is proposed, and the techniques are disclosed in Patent Documents 1 and 2.

  The conventional light-emitting device described in Patent Document 1 includes a light-transmitting first sealing resin having a refractive index smaller than that of the light-emitting element substrate covering the side surfaces of the light-emitting element, and a first sealing resin covering the first sealing resin. And a translucent second sealing resin having a refractive index smaller than that of the one sealing resin. Thereby, the critical angle at each interface is widened to improve the second light extraction efficiency emitted from the side surface of the light emitting element.

  In the conventional light emitting device described in Patent Document 2, a phosphor-containing region containing a phosphor is disposed in a resin around the light emitting element. Thereby, the light emitted from the light emitting element is converted into fluorescent light by the phosphor. Therefore, the ratio of fluorescent light that is not reabsorbed by the light emitting element increases, the ratio of scattered light that is reabsorbed by the light emitting element decreases, and light loss is reduced to improve luminance. That is, the first light extraction efficiency is improved.

  Patent Document 3 will be described later.

JP 2010-147040 A JP 2010-245481 A JP 2002-314142 A

  However, the conventional light emitting device described in Patent Document 1 causes an absorption loss when a part of the light in the sealing resin is reflected on the substrate surface of the light emitting device, and the second light extraction efficiency is reduced. was there. For example, when the substrate surface of the light emitting device is made of Ag in a mirror state, light with a wavelength of 450 nm emitted from the gallium nitride semiconductor light emitting element is absorbed by about 7%. In addition, there is a problem in that part of the light once extracted from the light emitting element returns to the light emitting element and is reabsorbed by the light emitting layer, and the first light extraction efficiency is reduced. The case where the light is scattered on the substrate surface or the case where the light is totally reflected at the interface between the resins corresponds to the cause of the decrease in the light emission efficiency.

  In the conventional light emitting device described in Patent Document 2, a resin containing a phosphor is present on the bottom surface of the light emitting element. As a result, an interval of at least about several μm to several tens of μm is generated between the surface of the base of the light emitting device having the role of heat dissipation and the bottom of the light emitting element. The resin has extremely poor thermal conductivity as compared with materials such as metals and ceramics constituting the light emitting element substrate and the surface of the light emitting device, and the thermal conductivity is further deteriorated as the thickness increases. Thus, the presence of the resin containing the phosphor on the bottom surface of the light emitting element has a problem that the reliability is lowered due to thermal factors.

  The present invention has been made in view of the above points, and an object of the present invention is to provide a light-emitting device that has favorable heat dissipation characteristics and improved light extraction efficiency, and a method for manufacturing the same.

  In order to solve the above problems, a light emitting device of the present invention includes a nitride semiconductor light emitting element including a substrate placed on a base and a plurality of nitride semiconductor layers, and a side of the nitride semiconductor light emitting element. And a first resin member having a refractive index that is the same as or lower than that of the substrate, including a phosphor having a function of converting the wavelength of light arranged on the long-wave side.

  According to this configuration, the first resin member has an intermediate refractive index with respect to the substrate and air, or the substrate and the sealing resin described later. Therefore, the first resin member has a small difference in refractive index from the substrate and a critical angle, and the light extraction efficiency from the substrate to the first resin member is improved. In addition, since the first resin member includes the phosphor, the light emission direction is changed and the light extraction efficiency is improved. Furthermore, once the wavelength of the light emitted from the nitride semiconductor light emitting device is once converted to the long wave side by the phosphor, the amount absorbed is reduced even when reentering the nitride semiconductor light emitting device. Therefore, the light extraction efficiency is further improved.

  In the light emitting device having the above structure, the nitride semiconductor light emitting element is electrically connected to the base body by flip chip mounting.

  According to this configuration, the thermal conductivity between the nitride semiconductor light emitting element and the substrate is improved, and the heat dissipation is improved. In addition, a metal wire that electrically connects the nitride semiconductor light emitting element and the substrate and a space on the substrate side electrode for connecting the metal wire become unnecessary, and the light emitting device is downsized. Therefore, for example, a television with an edge-type backlight can be reduced in thickness, and the degree of freedom in product design is increased. In addition, as the light emitting device is miniaturized, the manufacturing cost is also reduced.

  In the light emitting device having the above-described configuration, the first resin member is in contact with a side surface of the nitride semiconductor light emitting element.

  According to this configuration, the light extraction efficiency from the side surface of the nitride semiconductor light emitting device is improved. That is, it is effective when it is difficult to extract light from the side surface of the nitride semiconductor light emitting device, for example, when the side surface is in a mirror state and light is easily totally reflected inside the nitride semiconductor light emitting device.

  In the light emitting device having the above structure, the first resin member is separated from a side surface of the nitride semiconductor light emitting element.

  According to this configuration, the wavelength conversion efficiency of the emitted light from the nitride semiconductor light emitting element is improved. That is, it is effective when it is easy to extract light from the side surface of the nitride semiconductor light emitting device, for example, when the side surface is rough and it is difficult for the light to be totally reflected inside the nitride semiconductor light emitting device.

  In the light emitting device having the above-described configuration, the first resin member is formed as a molded body, and is arranged separately from the side surface of the nitride semiconductor light emitting element.

  According to this structure, the 1st resin member which is a molded object in another process is created previously. Therefore, working efficiency is improved. Furthermore, since the shape of the first resin member and the phosphor content are stably stabilized, the conversion rate of light received from the nitride semiconductor light emitting element is also stabilized. Therefore, the chromaticity yield of the light emitting device is improved.

  In the light emitting device having the above-described configuration, the first resin member is mainly composed of a silicone resin or an epoxy resin, and includes particles having the same or higher refractive index than the substrate.

  According to this configuration, the first resin member has a refractive index substantially higher than that of the substrate. Therefore, there is no total reflection at the interface between the substrate and the first resin member, and the light in the substrate is efficiently emitted to the first resin member side. More specifically, the particles preferably have a refractive index of 1.7 to 2.5 and a diameter of 100 μm or less. Further, the amount of particles contained in the first resin member is preferably as long as it can be formed in a desired form. This is because the amount of particles in contact with the substrate surface increases as the amount of resin increases, and the total reflection of light within the substrate can be more efficiently suppressed. The light confined in the first resin member having a high refractive index is scattered by the phosphor. In addition, when the light emitting device includes a third resin member described later, light is efficiently extracted to the outside by the third resin member.

  In the light emitting device having the above structure, the first resin member has a surface from which light is extracted, a surface facing the side surface of the nitride semiconductor light emitting element, and a surface facing the base.

  In the light-emitting device having the above-described configuration, the first resin member is characterized in that a cross-sectional shape perpendicular to the mounting surface of the nitride semiconductor light-emitting element of the base is substantially triangular.

  By setting the shape of the first resin member as in these configurations, the angular distribution of the light emitted from the first resin member changes.

  Further, in the light emitting device having the above-described configuration, the nitride semiconductor light emitting element is opposed to the mounting surface of the nitride semiconductor light emitting element of the base, and the shape viewed from above is substantially rectangular, and the first resin member Is arranged only on the long side of the nitride semiconductor light emitting device as viewed from above.

  In the light emitting device having the above-described configuration, the nitride semiconductor light emitting element is electrically connected to the base via a metal wire, and the first resin member connects the nitride semiconductor light emitting element to the nitride semiconductor of the base. The light emitting element is disposed only on the side of the nitride semiconductor light emitting element facing the mounting surface of the light emitting element so that the metal wire does not cross when viewed from above.

  In the light emitting device having the above-described configuration, the first resin member is disposed only on a side of the nitride semiconductor light emitting element.

  Further, in the light emitting device having the above-described configuration, the phosphor is not included between the base and the nitride semiconductor light emitting element below the nitride semiconductor light emitting element, and the refractive index is lower than that of the substrate. Two resin members are arranged.

  According to this configuration, since the refractive index of the second resin member is lower than that of the substrate, total reflection is likely to occur at the interface between the substrate and the second resin member, and light absorption into the substrate is suppressed. Light that is not absorbed by the substrate due to total reflection is extracted from the side surface of the substrate to the outside through the first resin member, so that the efficiency is improved. Furthermore, an increase in the thickness of the second resin member is suppressed. Therefore, the deterioration of the thermal conductivity in the second resin member is suppressed, and the heat dissipation characteristics are improved.

  In the light emitting device having the above-described configuration, the second resin member has a lower refractive index than the first resin member.

  According to this configuration, the light of the substrate is more confined in the first resin member, and the light emission efficiency is improved.

  In the light emitting device having the above structure, a third resin material is disposed on the side of the nitride semiconductor light emitting element and between the nitride semiconductor light emitting element and the first resin member. .

  In the light emitting device having the above-described configuration, the third resin member has a lower refractive index than the first resin member.

  In the light emitting device having the above-described configuration, the third resin member does not include a phosphor.

  In the light emitting device having the above-described configuration, the third resin member is made of a silicone resin.

  In the light-emitting device having the above-described configuration, the nitride semiconductor light-emitting element includes a portion having a surface roughness rougher than that of the periphery on a side surface thereof.

  According to this configuration, the third resin member has an intermediate refractive index with respect to the first resin member and air, or the first resin member and the sealing resin described later. Therefore, total reflection of light within the first resin member can be suppressed, and light can be efficiently extracted to the third resin member and further to the sealing resin.

  In order to solve the above problems, a method for manufacturing a light emitting device according to the present invention includes a step of placing a second resin member on a substrate, and a nitride semiconductor light emitting element on the second resin member. Placing the first resin member on the base, contacting the nitride semiconductor light emitting element, and curing the first resin member. And a step of providing a metal wire straddling between the substrate and the nitride semiconductor light emitting device.

  In order to solve the above problems, a method for manufacturing a light emitting device according to the present invention includes a step of placing a second resin member on a substrate, and a nitride semiconductor light emitting element on the second resin member. Placing the first resin member made of a molded body on the base and spaced apart from the side surface of the nitride semiconductor light emitting element; and curing the second resin member; And a step of providing a metal wire straddling between the base and the nitride semiconductor light emitting device.

  In the method for manufacturing a light emitting device having the above-described structure, a step of providing a sealing resin on the base so as to cover the nitride semiconductor light emitting element, the first resin member, the second resin member, and the metal wire. It is characterized by including.

  In order to solve the above problems, a method of manufacturing a light emitting device according to the present invention includes a step of electrically connecting and fixing the nitride semiconductor light emitting element to the base by flip chip mounting, The method includes a step of placing the first resin member in contact with the nitride semiconductor light emitting element and a step of curing the first resin member.

  In order to solve the above problems, a method for manufacturing a light-emitting device according to the present invention includes a step of electrically connecting and fixing the nitride semiconductor light-emitting element to the base by flip-chip mounting; And a step of disposing a first resin member made of a molded body so as to be separated from a side surface of the nitride semiconductor light emitting element.

  The method for manufacturing a light emitting device having the above-described configuration includes a step of providing a sealing resin on the base so as to cover the nitride semiconductor light emitting element and the first resin member.

  In order to solve the above problems, a method for manufacturing a light emitting device according to the present invention includes a step of placing a second resin member on a substrate, and a nitride semiconductor light emitting element on the second resin member. A step of placing, a step of curing the second resin member, a step of placing the third resin member in contact with the nitride semiconductor light emitting element on the base, and curing the third resin member A step of placing the first resin member in contact with the third resin member outside the third resin member, a step of curing the first resin member, the base and the nitride semiconductor light emitting And a step of providing a metal wire straddling the element.

  Further, in the method of manufacturing the light emitting device having the above configuration, the nitride semiconductor light emitting element, the first resin member, the second resin member, the third resin member, and the metal wire are sealed on the base so as to cover. It includes a step of providing a stop resin.

  In order to solve the above problems, a method of manufacturing a light emitting device according to the present invention includes a step of electrically connecting and fixing the nitride semiconductor light emitting element to the base by flip chip mounting, Placing the third resin member in contact with the nitride semiconductor light emitting device; curing the third resin member; contacting the third resin member outside the third resin member; The method includes a step of placing one resin member and a step of curing the first resin member.

  The method of manufacturing a light emitting device having the above-described structure includes a step of providing a sealing resin on the base so as to cover the nitride semiconductor light emitting element, the first resin member, and the third resin member. It is said.

  According to the configuration of the present invention, it is possible to provide a light emitting device and a method for manufacturing the same that have favorable heat dissipation characteristics and improved light extraction efficiency.

It is sectional drawing of the light-emitting device of 1st Embodiment of this invention. It is sectional drawing of the light emitting element of the light-emitting device of 1st Embodiment of this invention. It is a top view of the light emitting element and 1st resin member of the light-emitting device of 1st Embodiment of this invention. It is a perspective view of the light emitting element and 1st resin member of the light-emitting device of 1st Embodiment of this invention. It is a top view of the light emitting element and 1st resin member of the light-emitting device of 3rd Embodiment of this invention. It is sectional drawing of the light-emitting device of 4th Embodiment of this invention. It is a top view of the light emitting element and 1st resin member of the light-emitting device of 4th Embodiment of this invention. It is sectional drawing of the light-emitting device of 5th Embodiment of this invention. It is sectional drawing of the light-emitting device of 6th Embodiment of this invention. It is sectional drawing of the light-emitting device of 7th Embodiment of this invention. It is sectional drawing of the light emitting element of the light-emitting device of 7th Embodiment of this invention. It is sectional drawing of the light-emitting device of 8th Embodiment of this invention. It is sectional drawing of the light-emitting device of 9th Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to FIGS.

<First Embodiment>
First, the configuration of the light emitting device according to the first embodiment of the present invention will be described with reference to FIGS. 1 is a cross-sectional view of the light-emitting device, FIG. 2 is a cross-sectional view of the light-emitting element of the light-emitting device, FIG. 3 is a plan view of the light-emitting element and the first resin member of the light-emitting device, and FIG. It is a perspective view of a member.

  The light emitting device 1 includes a nitride semiconductor light emitting element 20 mounted on a base 2 as shown in FIG. The nitride semiconductor light emitting element 20 has a rectangular parallelepiped shape as viewed from above as shown in FIG.

  As shown in FIG. 2, the nitride semiconductor light emitting element 20 includes a nitride semiconductor stacked unit 30 in which a plurality of nitride semiconductor layers are stacked on a main growth surface of a substrate 21 made of, for example, a sapphire substrate, a GaN substrate, or a SiC substrate. . As the nitride semiconductor laminated portion 30, an n-type nitride semiconductor layer 31 composed of an n-type GaN layer, a light emitting layer 32, and a p-type nitride semiconductor layer 33 composed of a p-type GaN layer are grown in order from the substrate 21 side. . The nitride semiconductor laminated portion 30 on the substrate 21 is grown using an epitaxial growth method such as a MOCVD (Metal Organic Chemical Vapor Deposition) method.

An ITO layer 22 is formed on the upper surface of the nitride semiconductor multilayer portion 30. Further, a SiO ₂ layer 23 is formed on the upper surface of the ITO layer 22. The SiO ₂ layer 23 is not formed on the entire surface of the ITO layer 22. In the electrode connection portion, the SiO ₂ layer 23 is removed, and the ITO layer 22 or the n-type nitride semiconductor layer 31 and the n-side electrode are exposed. In addition, an electrode portion 25 (see FIG. 4) is formed in the upper layer of the nitride semiconductor multilayer portion 30. As shown in FIGS. 1 and 4, the nitride semiconductor light emitting device 20 is electrically connected to an electrode portion (not shown) provided on the base 2 by an electrode portion 25 provided on the surface of the nitride semiconductor light emitting device 20.

The light generated in the light emitting layer 32 is emitted from the SiO ₂ layer 23 that is the uppermost surface of the nitride semiconductor light emitting element 20 and the side surfaces 24 of each layer (both end surfaces in the left and right direction and both end surfaces in the depth direction of the paper in FIGS. 1 and 2). Is done.

  Such a nitride semiconductor light emitting device 20 is constituted by a substrate 21 made of a sapphire substrate, a GaN substrate, or a SiC substrate, which has a relatively high refractive index on the side surface 24. And the light-emitting device 1 is provided with the 1st resin member 4 in the side of this nitride semiconductor light-emitting element 20, as shown in FIG.1 and FIG.3. The first resin member 4 is provided on two long side sides of the nitride semiconductor light emitting element 20 having a rectangular shape when viewed from above (see FIG. 3).

  When the nitride semiconductor light emitting element 20 is rectangular, generally the side surface on the long side has lower light extraction efficiency than the side surface on the short side. This is because the distance (optical path) between the two opposite long side surfaces is short, and the long side surface has a high probability of being totally reflected by the incidence of light having a critical angle or more. Thereby, when it is desired to increase the light extraction efficiency only on the side surface on the long side, the first resin member 4 may be placed only on the side surface on the long side.

  In the case where the nitride semiconductor light emitting element 20 has the electrode portion 25 on the upper surface as described above, the nitride semiconductor light emitting element 20 is electrically connected to the substrate 2 via the metal wire 3 such as an Au wire in order to make an electrical connection with the outside. Connected. If the first resin member 4 is to be placed after the metal wire 3 is connected to the nitride semiconductor light emitting element 20 and the base 2, the metal wire 3 becomes an obstacle and it is difficult to place the first resin member 4. Therefore, the first resin member 4 is not disposed on the side surface 24 where the metal wire 3 crosses when the nitride semiconductor light emitting element 20 is opposed to the mounting surface of the nitride semiconductor light emitting element 20 of the base 2 and viewed from above. By disposing the first resin member 4 only on the side surface 24 where the line 3 does not cross (see FIG. 4), the above problem can be solved. Further, due to misalignment when the first resin member 4 is provided, the first resin member 4 adheres to the electrode portion of the base 2 for connecting the metal wire 3 and the metal wire 3 causes poor connection. Can be prevented.

  The first resin member 4 is made of a silicone resin or an epoxy resin having a relatively high refractive index in contact with the side surface 24 of the nitride semiconductor light emitting element 20. Further, the first resin member 4 includes a phosphor.

  The first resin member 4 has a substantially triangular cross-sectional shape perpendicular to the mounting surface of the nitride semiconductor light-emitting element 20 of the base 2, that is, the cross-sectional shape viewed from the depth direction of FIG. Thereby, the first resin member 4 has a surface 4 a for extracting light, a surface 4 b that faces the side surface 24 of the nitride semiconductor light emitting element 20, and a surface 4 c that faces the base 2.

  The second resin member 5 is disposed below the nitride semiconductor light emitting element 20 and between the base 2. The second resin member 5 does not contain a phosphor and has a lower refractive index than the substrate 21 and the first resin member 4.

  The nitride semiconductor light emitting element 20, the metal wire 3, the first resin member 4, and the second resin member 5 are covered with a sealing resin 6 as shown in FIG. 1. The sealing resin 6 has a dome shape with an outer surface formed in a substantially hemispherical shape on the base 2. The sealing resin 6 is made of, for example, a thermosetting silicone resin or an epoxy resin. Further, the sealing resin 6 may contain additives such as a phosphor and a diffusing agent. Further, the sealing resin 6 has a lower refractive index than the first resin member 4.

  Next, a method for manufacturing the light emitting device 1 having the above configuration will be described.

  First, the second resin member 5 is placed on the surface of the base 2. Then, the nitride semiconductor light emitting element 20 is bonded so that the entire lower surface of the substrate 21 facing the electrode on the surface of the base 2 is in contact with the second resin member 5. It is desirable to place the second resin member 5 as thin as possible so as not to impair the heat dissipation characteristics.

  In order to control the refractive index of the second resin member 5, particles having a refractive index of 1.7 to 2.5 and a diameter of 100 μm or less, for example, zirconium oxide particles or titanium oxide particles are mixed. The refractive index of these particles is determined by the dielectric constant of the main material (for example, silicone resin) of the second resin member 5, and the refractive index of the second resin member 5 after mixing is determined by the mixing ratio of the particles and the main material.

  Subsequently, a thermosetting process is performed on the second resin member 5. As curing conditions, the temperature and the time are preferred so that the translucency of the second resin member 5 is not lost and the adhesion is not impaired.

  Subsequently, the first resin member 4 is placed so as to cover the side surface of the nitride semiconductor light emitting element 20. The first resin member 4 is placed on the two long side sides of the nitride semiconductor light emitting element 20 having a rectangular shape when viewed from above.

  By masking a region where the first resin member 4 should not be placed, the first resin member 4 can be partially placed. The first resin member 4 is prevented from contacting the top surface including the electrode portion of the nitride semiconductor light emitting device 20. By using scooping up that utilizes the viscosity of the first resin member 4, the cross-sectional shape viewed from the depth direction in FIG. In this way, the first resin member 4 is disposed only on the side of the nitride semiconductor light emitting element 20.

  For the first resin member 4, for example, a silicone resin having a refractive index that is the same as or lower than the refractive index of the substrate 21 of the nitride semiconductor light emitting element 20 is used. For the first resin member 4 and the second resin member 5, thermosetting resins such as silicone resins, epoxy resins, acrylic resins, and imide resins that are conventionally used as die bond pastes for semiconductor light emitting devices can be used. In particular, a silicone resin has a high transmittance with respect to light having a short wavelength in a blue to ultraviolet region, and a method of using it as a sealing agent for sealing a semiconductor light emitting element is known (see Patent Document 3).

  The first resin member 4 is previously mixed with a phosphor having a function of converting the wavelength of light to the long wave side. Conventionally known phosphors include YAG (yttrium, aluminum, garnet) phosphors that are often used in white LEDs. Currently, a phosphor having a particle diameter of about 100 nm is obtained. For example, such a phosphor can be included in the first resin member 4.

  Further, as the phosphor included in the first resin member 4, for example, Ce: YAG (cerium activated yttrium / aluminum / garnet) phosphor (Y3Al5O12: Ce, (Y, Gd) 3Al5O12: Ce, etc.), Eu: BOSE (europium) Activated barium, strontium, orthosilicate) phosphor, Eu: SOSE (europium activated strontium, barium, orthosilicate) phosphor, europium activated α sialon phosphor, Ce: TAG (cerium activated terbium, aluminum, garnet) phosphor ( Tb3Al5O12: Ce, etc.), alkaline earth (Eu-activated M2Si5N8: Eu, MSi12O2N2: Eu, etc., Ce-activated Ca3SC2Si3O12), Casun-Eu (Eu-activated CaAlSi3N3), La oxynitride-C Ce Fukatsu LaAl (Si6-zAl2) N10-z0, can be applied, such as β-sialon-based. (Sr, Ba, Mg) 2SiO4: Eu, green phosphor made of Ca3 (Sc, Mg) 2Si3O12: Ce, red phosphor made of (Sr, Ca) AlSiN3: Eu, CaAlSiN3: Eu, etc. ) A diffusing agent may be included together with the phosphor, such as a yellow phosphor composed of 6 (O, N) 8: Eu, (Ba, Sr) 2SiO4: Eu, and the like.

  Although it does not restrict | limit especially as a diffusing agent, For example, a barium titanate, a titanium oxide, an aluminum oxide, a silicon oxide, a calcium carbonate, silicon dioxide etc. can be used conveniently, and the thing with a comparatively small particle size is preferable. .

  Subsequently, a thermosetting process is performed on the first resin member 4.

  Then, for each of the n-pole and the p-pole, a metal wire 3 is provided between the electrode portion of the nitride semiconductor light emitting element 20 and the electrode portion on the surface of the base 2 to be electrically connected. For the connection, it is desirable to use an Au wire with little heat and gas deterioration as the metal wire 3. Further, in order to reduce the light absorption loss due to the metal wire 3, it is desirable that the Au wire is provided so that the solid angle is as small as possible when viewed from the nitride semiconductor light emitting element 20.

  Subsequently, the nitride semiconductor light emitting element 20, the metal wire 3, the first resin member 4, and the second resin member provided on the base 2 using the sealing resin 6 having a lower refractive index than that of the first resin member 4. 5 is resin-sealed. As the first resin member 4 and the second resin member 5, a thermosetting resin such as a silicone resin, an epoxy resin, an acrylic resin, and an imide resin can be used for the sealing resin 6.

  The sealing resin 6 is dropped toward the upper surface of the base 2 using, for example, a dispenser. For example, when the nitride semiconductor light emitting element 20 is turned on, the dropped sealing resin 6 is heated and cured immediately after the dropping. Since the heat generated by light emission of the nitride semiconductor light emitting element 20 is conducted radially around the nitride semiconductor light emitting element 20, the sealing resin 6 dropped toward the nitride semiconductor light emitting element 20 has a substantially semicircular cross section shown in FIG. It is formed in a hemispherical dome shape.

  A phosphor similar to the first resin member 4 is agitated and mixed in the sealing resin 6 in advance. Further, a diffusing agent may be used for the sealing resin 6.

  As described above, the light emitting device 1 is disposed on the side of the nitride semiconductor light emitting element 20 including the nitride semiconductor light emitting element 20 including the substrate 21 and the plurality of nitride semiconductor layers placed on the base 2. A first resin member 4 having a refractive index that is the same as or lower than that of the substrate 21 is included. Thereby, the first resin member 4 has an intermediate refractive index with respect to the substrate 21 and air or between the substrate 21 and the sealing resin 6. Therefore, the first resin member 4 has a small refractive index difference from the substrate 21 and a critical angle, and the light extraction efficiency from the substrate 21 to the first resin member 4, that is, from the side surface 24 of the nitride semiconductor light emitting element 20. The light extraction efficiency is improved.

  Here, most of the light emitted from the side surface 24 is light emitted downward from the light emitting layer 32. A part of the light generated by the nitride semiconductor light emitting device 20 is not multiple-reflected and emitted outside the device unless it is greatly scattered inside the device, and the light intensity is reduced. Further, when there is no scatterer outside the nitride semiconductor light emitting device 20, it collides with the substrate 2 and is absorbed.

  This effect becomes significant when the wavelength of light emitted from the nitride semiconductor light emitting device 20 is in the ultraviolet region. For example, when Al plating, which is an efficient reflector for ultraviolet rays, is applied to the substrate surface, the absorption rate by the substrate 2 can be reduced by about 10% if the light wavelength is 320 nm to 390 nm. If the wavelength of light is about 100 nm, the absorption rate by the substrate 2 can be reduced by about 80%.

  On the other hand, when the first resin member 4 includes the phosphor, the light extraction efficiency can be improved by changing the light emission direction. Furthermore, once the wavelength of the emitted light from the nitride semiconductor light emitting device 20 is once converted to the long wave side by the phosphor, the amount absorbed is reduced even when reentering the nitride semiconductor light emitting device 20. Therefore, the light extraction efficiency can be further improved.

  In addition, since the first resin member 4 contacts the side surface 24 of the nitride semiconductor light emitting element 20, the light extraction efficiency from the side surface 24 of the nitride semiconductor light emitting element 20 is improved. This is particularly effective when it is difficult to extract light from the side surface 24 of the nitride semiconductor light emitting device 20.

  The first resin member 4 has a surface 4 a for extracting light, a surface 4 b that faces the side surface 24 of the nitride semiconductor light emitting element 20, and a surface 4 c that faces the base 2, and the nitride semiconductor light emission of the base 2 The cross-sectional shape perpendicular to the mounting surface of the element 20 has a substantially triangular shape. Thereby, the angular distribution of the light emitted from the first resin member 4 can be changed. This is because the reflectivity has angle dependency due to the nature of Fresnel reflection. For example, when the light emitting device 1 is mounted on a package having a reflector having a high reflectance outside the first resin member 4, the surface shape of the first resin member 4 is changed so as to match an angle at which the reflector can be effectively used. Thus, the light extraction efficiency can be further improved.

  Further, the shape of the nitride semiconductor light emitting element 20 facing the mounting surface of the nitride semiconductor light emitting element 20 of the base 2 as viewed from above is substantially rectangular, and the first resin member 4 is the nitride semiconductor light emitting element 20. Is disposed only on the long side when viewed from above. The first resin member 4 is preferably placed so as to cover the entire side surface 24 of the nitride semiconductor light emitting element 20, but considering the mass production efficiency and cost, it is sufficient to exhibit a sufficient effect only on the long side of the rectangular shape. Conceivable.

  In addition, the first resin member 4 faces the nitride semiconductor light emitting element 20 on the base 2 on the mounting surface of the nitride semiconductor light emitting element 20 so that the metal wire 3 does not cross when viewed from above. It is arranged only in the direction. Thereby, when mounting the 1st resin member 4, the metal wire 3 does not become obstructive, and mounting of the 1st resin member 4 becomes easy.

  Further, the second resin member 5 which does not include a phosphor and has a lower refractive index than the substrate 21 is disposed below the nitride semiconductor light emitting element 20 and between the base 2 and the nitride semiconductor light emitting element 20. . Since the second resin member 5 has a lower refractive index than the substrate 21, total reflection is likely to occur at the interface between the substrate 21 and the second resin member 5, and light absorption into the base 2 is suppressed. Light that is not absorbed by the base 2 due to total reflection is extracted from the side surface of the substrate 21 to the outside through the first resin member 4, so that the efficiency is improved. Furthermore, an increase in the thickness of the second resin member 5 can be suppressed. Therefore, the deterioration of the thermal conductivity in the second resin member 5 is suppressed, and the heat dissipation characteristics can be improved.

  Further, since the second resin member 5 has a lower refractive index than the first resin member 4, the light of the substrate 21 is more confined in the first resin member 4. Therefore, the light emitting device 1 improves the light emission efficiency.

  As described above, according to the configuration of the above embodiment of the present invention, it is possible to provide the light emitting device 1 having a preferable heat dissipation characteristic and improving the light extraction efficiency and a method for manufacturing the same.

Second Embodiment
Next, a light emitting device according to a second embodiment of the invention will be described with reference to FIG. Since the basic configuration of this embodiment is the same as that of the first embodiment described with reference to FIGS. 1 to 4, the same components as those of the first embodiment are denoted by the same reference numerals as before, and the drawings. And the detailed description thereof will be omitted.

  The light emitting device 1 according to the second embodiment is made of a resin having a relatively high refractive index in which the first resin member 4 is in contact with the side surface 24 of the nitride semiconductor light emitting element 20 (see FIG. 1). In order to control the refractive index, the first resin member 4 is made of a silicone resin or an epoxy resin containing particles having a refractive index of 1.7 to 2.5 and a diameter of 100 μm or less, such as zirconium particles and titanium oxide particles. The refractive index of these particles is determined by the dielectric constant of the main material (for example, silicone resin) of the first resin member 4, and the refractive index of the first resin member 4 after mixing is determined by the blending ratio of the particles and the main material.

  According to this configuration, the first resin member 4 has a refractive index substantially higher than that of the substrate 21. Accordingly, there is no total reflection at the interface between the substrate 21 and the first resin member 4, and the light in the substrate 21 is efficiently emitted to the first resin member 4 side. More specifically, the particles preferably have a refractive index of 1.7 to 2.5 and a diameter of 100 μm or less. Further, the amount of particles contained in the first resin member 4 is preferably as long as it can be formed in a desired form. This is because the amount of particles in contact with the surface of the substrate 21 increases as the amount of resin increases, and the total reflection of light within the substrate 21 can be more efficiently suppressed. The light confined in the first resin member 4 having a high refractive index is scattered by the phosphor. In addition, when the light emitting device 1 includes a third resin member 8 described later, the light is efficiently extracted to the outside by the third resin member 8.

<Third Embodiment>
Next, a light emitting device according to a third embodiment of the invention will be described with reference to FIG. FIG. 5 is a plan view of the light emitting element and the first resin member of the light emitting device. Since the basic configuration of this embodiment is the same as that of the first embodiment described with reference to FIGS. 1 to 3, the same reference numerals are assigned to the same components as those of the first embodiment. Detailed description thereof will be omitted.

  The light emitting device 1 according to the third embodiment includes a first resin member 4 on the side of the nitride semiconductor light emitting element 20 as shown in FIG. The first resin member 4 is provided in contact with the side surface 24 of the nitride semiconductor light emitting element 20 over the entire periphery of the nitride semiconductor light emitting element 20 having a rectangular shape when viewed from above. According to this configuration, the light extraction efficiency can be further improved.

<Fourth embodiment>
Next, a light emitting device according to a fourth embodiment of the invention will be described with reference to FIGS. FIG. 6 is a cross-sectional view of the light emitting device, and FIG. 7 is a plan view of the light emitting element and the first resin member of the light emitting device. Since the basic configuration of this embodiment is the same as that of the first embodiment described with reference to FIGS. 1 to 3, the same reference numerals are assigned to the same components as those of the first embodiment. Detailed description thereof will be omitted. In FIG. 6, drawing of the metal wire 3 and the sealing resin 6 is omitted.

  The light emitting device 1 according to the fourth embodiment includes the first resin member 7 on the side of the nitride semiconductor light emitting element 20 as shown in FIGS. 6 and 7. The first resin member 7 is spaced apart from the side surface 24 of the nitride semiconductor light emitting element 20. Further, the first resin member 7 is formed and arranged in advance as a molded body in which a cross-sectional shape perpendicular to the mounting surface of the nitride semiconductor light emitting element 20 of the base 2 is a substantially triangular shape.

  Next, a method for manufacturing the light emitting device 1 having the above configuration will be described.

  First, the second resin member 5 is placed on the surface of the base 2. Then, the nitride semiconductor light emitting element 20 is bonded so that the entire lower surface of the substrate 21 facing the electrode on the surface of the base 2 is in contact with the second resin member 5.

  Subsequently, the first resin member 7 made of a molded body is disposed on the base 2 and spaced from the side surface 24 of the nitride semiconductor light emitting element 20. The first resin member 7 is placed on the two long side sides of the nitride semiconductor light emitting element 20 having a rectangular shape when viewed from above.

  Subsequently, a thermosetting process is performed on the second resin member 5. And the metal wire 3 straddling between the base | substrate 2 and the nitride semiconductor light-emitting device 20 is provided, and they are electrically connected.

  Finally, the nitride semiconductor light emitting element 20, the metal wire 3, the first resin member 7, and the second resin member 5 provided on the base 2 are sealed with the sealing resin 6.

  As described above, since the first resin member 7 is separated from the side surface 24 of the nitride semiconductor light emitting element 20, the wavelength conversion efficiency of the light emitted from the nitride semiconductor light emitting element 20 is improved. That is, it is effective when it is easy to extract light from the side surface 24 of the nitride semiconductor light emitting device 20.

  Moreover, according to this structure, the 1st resin member 7 which is a molded object is produced in another process previously. Therefore, working efficiency can be improved. Furthermore, since the shape of the first resin member 7 and the phosphor content are constantly stabilized, the conversion rate of light received from the nitride semiconductor light emitting element 20 can be stabilized. Therefore, the chromaticity yield of the light emitting device 1 can be improved.

<Fifth Embodiment>
Next, a light emitting device according to a fifth embodiment of the invention will be described with reference to FIG. FIG. 8 is a cross-sectional view of the light emitting device. Since the basic configuration of this embodiment is the same as that of the first embodiment described with reference to FIGS. 1 to 3, the same reference numerals are assigned to the same components as those of the first embodiment. Detailed description thereof will be omitted. In FIG. 8, drawing of the metal wire 3 and the sealing resin 6 is omitted.

  The light emitting device 1 according to the fifth embodiment includes a first resin member 4 and a third resin member 8 on the side of the nitride semiconductor light emitting element 20 as shown in FIG. The third resin member 8 is disposed between the nitride semiconductor light emitting element 20 and the first resin member 4. Therefore, the first resin member 4 is disposed away from the side surface 24 of the nitride semiconductor light emitting element 20. The third resin member 8 is made of, for example, a silicone resin and does not include a phosphor. Further, the third resin member 8 has a lower refractive index than the first resin member 4.

  Next, a method for manufacturing the light emitting device 1 having the above configuration will be described.

  First, the second resin member 5 is placed on the surface of the base 2. Then, the nitride semiconductor light emitting element 20 is bonded so that the entire lower surface of the substrate 21 facing the electrode on the surface of the base 2 is in contact with the second resin member 5. Thereafter, a thermosetting process is performed on the second resin member 5.

  Subsequently, the third resin member 8 is placed so as to cover the side surface 24 of the nitride semiconductor light emitting element 20, and a thermosetting process is performed on the third resin member 8. Subsequently, the first resin member 4 is placed outside the third resin member 8 in contact with the third resin member 8, and a thermosetting process is performed on the first resin member 4.

  And the metal wire 3 straddling between the base | substrate 2 and the nitride semiconductor light-emitting device 20 is provided, and they are electrically connected.

  Finally, the nitride semiconductor light emitting element 20, the metal wire 3, the first resin member 4, the second resin member 5, and the third resin member 8 provided on the substrate 2 are sealed with the sealing resin 6.

  According to this configuration, the third resin member 8 having a refractive index lower than that of the first resin member 4 is interposed between the nitride semiconductor light emitting element 20 and the first resin member 4. Thereby, the confinement of the light inside the 1st resin member 4 can be increased, and the conversion efficiency to the long wave side of the wavelength of the light by the fluorescent substance which the 1st resin member 4 contains can be improved. When the conversion efficiency of the wavelength of light increases, the amount of phosphor used can be reduced, and the cost can be reduced.

  In this embodiment, it is desirable that the contact area between the first resin member 4 and the base 2 is small. This is to suppress the frequency with which light that causes multiple reflection at the interface between the first resin member 4 and the outside thereof is absorbed by the base 2.

<Sixth Embodiment>
Next, a light emitting device according to a sixth embodiment of the invention will be described with reference to FIG. FIG. 9 is a cross-sectional view of the light emitting device. Since the basic configuration of this embodiment is the same as that of the first embodiment described with reference to FIGS. 1 to 3, the same reference numerals are assigned to the same components as those of the first embodiment. Detailed description thereof will be omitted. In FIG. 9, drawing of the metal wire 3 and the sealing resin 6 is omitted.

  The light emitting device 1 according to the sixth embodiment includes a first resin member 4 and a third resin member 8 on the side of the nitride semiconductor light emitting element 20 as shown in FIG. The nitride semiconductor light emitting device 20 includes a rough surface portion 24a that is a portion having a surface roughness rougher than that of the periphery on the side surface 24 thereof. As a method of forming the rough surface portion 24a, for example, a stealth dicing method or an etching method can be used in addition to the pulse laser processing.

According to this configuration, the third resin member 8 has an intermediate refractive index with respect to the first resin member 4 and air or the first resin member 4 and the sealing resin 6. Therefore, total reflection of light in the first resin member 4 can be suppressed, and light can be efficiently extracted to the third resin member 8 and the sealing resin 6.
<Seventh embodiment>
Next, a light emitting device according to a seventh embodiment of the invention will be described with reference to FIGS. 10 is a cross-sectional view of the light-emitting device, and FIG. 11 is a cross-sectional view of a light-emitting element of the light-emitting device. Since the basic configuration of this embodiment is the same as that of the first embodiment and the third embodiment described above, the same reference numerals are given to the same components as those of the previous embodiment, and the drawings And the detailed description thereof will be omitted.

  In the light emitting device 1 according to the seventh embodiment, as shown in FIG. 10, a nitride semiconductor light emitting element 20 is electrically connected and fixed to the base 2 by flip chip mounting.

As shown in FIG. 11, the nitride semiconductor light emitting device 20 has a configuration in which the nitride semiconductor light emitting device 20 described in the first embodiment with reference to FIG. 2 is turned upside down. The nitride semiconductor light emitting device 20 includes a substrate 21, an n-type nitride semiconductor layer 31, a light emitting layer 32, a p-type nitride semiconductor layer 33, a transparent electrode layer 22 such as ITO / IZO, and SiO ₂ / SiN in order from the top layer. A protective film layer 23 is provided. The electrode portion 25 is disposed on the bottom surface portion of the nitride semiconductor light emitting element 20. The electrode portion 25 includes a p-electrode 25 p that is electrically connected to the p-type nitride semiconductor layer 33 and an n-electrode 25 n that is electrically connected to the n-type nitride semiconductor layer 31.

  In flip chip mounting, bumps 9 made of Au or the like provided corresponding to the electrode portions 25 on the bottom surface of the nitride semiconductor light emitting element 20 are melted using ultrasonic vibration or the like and bonded to the electrodes of the substrate 2.

  In addition, the light emitting device 1 includes a first resin member 4 on the side of the nitride semiconductor light emitting element 20 as shown in FIG. The first resin member 4 is provided in contact with the side surface 24 of the nitride semiconductor light emitting element 20. The first resin member 4 may be provided on two long side sides of the nitride semiconductor light emitting element 20 having a rectangular shape when viewed from above (see FIG. 3), or around the nitride semiconductor light emitting element 20. It may be provided over the entire area (see FIG. 5). If the first resin member 4 is provided in contact with the side surface 24 over the entire periphery of the nitride semiconductor light emitting element 20, the light extraction efficiency can be further improved.

  Next, a method for manufacturing the light emitting device 1 having the above configuration will be described.

  First, the nitride semiconductor light emitting element 20 is mounted on the base 2 so that the electrode portion 25 on the bottom surface of the nitride semiconductor light emitting element 20 corresponding to the electrode on the surface of the base 2 is in contact with the electrode of the base 2 via the bump 9. To do. Then, the bump 9 is melted using ultrasonic vibration or the like, and the nitride semiconductor light emitting element 20 and the base 2 are electrically joined and fixed.

  Subsequently, the first resin member 4 is placed so as to cover the side surface 24 of the nitride semiconductor light emitting device 20. Then, a thermosetting process is performed on the first resin member 4.

  Finally, the nitride semiconductor light emitting element 20 and the first resin member 4 provided on the substrate 2 are resin-sealed using a sealing resin 6 having a lower refractive index than that of the first resin member 4.

  According to this configuration, the thermal conductivity between the nitride semiconductor light emitting element 20 and the base 2 is improved, and the heat dissipation is improved. Further, the metal wire 3 that electrically connects the nitride semiconductor light emitting element 20 and the base 2 and the space of the electrode on the substrate side for connecting the metal wire 3 become unnecessary, and the light emitting device 1 is downsized. Therefore, for example, a television with an edge-type backlight can be reduced in thickness, and the degree of freedom in product design can be increased. Further, it is possible to reduce the manufacturing cost as the light emitting device 1 is downsized.

<Eighth Embodiment>
Next, a light emitting device according to an eighth embodiment of the invention will be described with reference to FIG. FIG. 12 is a cross-sectional view of the light emitting device. Since the basic configuration of this embodiment is the same as that of the first embodiment, the fourth embodiment, and the seventh embodiment described above, the same reference numerals are used for the components common to those embodiments. The detailed description thereof will be omitted. In FIG. 12, drawing of the sealing resin 6 is omitted.

  In the light emitting device 1 according to the eighth embodiment, as shown in FIG. 12, the nitride semiconductor light emitting element 20 is electrically connected and fixed to the base 2 by flip chip mounting. In flip chip mounting, bumps 9 made of Au or the like provided corresponding to the electrode portions 25 on the bottom surface of the nitride semiconductor light emitting element 20 are melted using ultrasonic vibration or the like and bonded to the electrodes of the substrate 2.

  In addition, the light emitting device 1 includes the first resin member 7 on the side of the nitride semiconductor light emitting element 20. The first resin member 7 is spaced apart from the side surface 24 of the nitride semiconductor light emitting element 20. The first resin member 7 is formed and arranged in advance as a molded body having a substantially triangular cross-sectional shape perpendicular to the mounting surface of the nitride semiconductor light emitting element 20 of the base 2.

  Next, a method for manufacturing the light emitting device 1 having the above configuration will be described.

  First, the nitride semiconductor light emitting element 20 is mounted on the base 2 so that the electrode portion 25 on the bottom surface of the nitride semiconductor light emitting element 20 corresponding to the electrode on the surface of the base 2 is in contact with the electrode of the base 2 via the bump 9. To do. Then, the bump 9 is melted using ultrasonic vibration or the like, and the nitride semiconductor light emitting element 20 and the base 2 are electrically joined and fixed.

  Subsequently, the first resin member 7 made of a molded body is disposed on the base 2 and spaced from the side surface 24 of the nitride semiconductor light emitting element 20. The first resin member 7 may be placed on two long side sides of the nitride semiconductor light emitting element 20 having a rectangular shape when viewed from above, or over the entire periphery of the nitride semiconductor light emitting element 20. May be placed.

  Finally, the nitride semiconductor light emitting element 20 and the first resin member 7 provided on the base 2 are sealed with a sealing resin 6.

  As described above, since the first resin member 7 is separated from the side surface 24 of the nitride semiconductor light emitting element 20, the wavelength conversion efficiency of the light emitted from the nitride semiconductor light emitting element 20 is improved. That is, it is effective when it is easy to extract light from the side surface 24 of the nitride semiconductor light emitting device 20. Furthermore, the thermal conductivity between the nitride semiconductor light emitting element 20 and the base 2 is improved, and the heat dissipation is improved. Further, the light emitting device 1 can be downsized and the manufacturing cost can be reduced.

<Ninth Embodiment>
Next, a light emitting device according to a ninth embodiment of the invention will be described with reference to FIG. FIG. 13 is a cross-sectional view of the light emitting device. Since the basic configuration of this embodiment is the same as that of the first embodiment, the fifth embodiment, and the seventh embodiment described above, the same reference numerals are used for the components common to those embodiments. The detailed description thereof will be omitted. In FIG. 13, the drawing of the sealing resin 6 is omitted.

  In the light emitting device 1 according to the ninth embodiment, as shown in FIG. 13, the nitride semiconductor light emitting element 20 is electrically connected and fixed to the substrate 2 by flip chip mounting. In flip chip mounting, bumps 9 made of Au or the like provided corresponding to the electrode portions 25 on the bottom surface of the nitride semiconductor light emitting element 20 are melted using ultrasonic vibration or the like and bonded to the electrodes of the substrate 2.

  The light emitting device 1 includes a first resin member 4 and a third resin member 8 on the side of the nitride semiconductor light emitting element 20. The third resin member 8 is disposed between the nitride semiconductor light emitting element 20 and the first resin member 4. Therefore, the first resin member 4 is disposed away from the side surface 24 of the nitride semiconductor light emitting element 20. The third resin member 8 is made of, for example, a silicone resin and does not include a phosphor. Further, the third resin member 8 has a lower refractive index than the first resin member 4.

  Next, a method for manufacturing the light emitting device 1 having the above configuration will be described.

  First, the nitride semiconductor light emitting element 20 is mounted on the base 2 so that the electrode portion 25 on the bottom surface of the nitride semiconductor light emitting element 20 corresponding to the electrode on the surface of the base 2 is in contact with the electrode of the base 2 via the bump 9. To do. Then, the bump 9 is melted using ultrasonic vibration or the like, and the nitride semiconductor light emitting element 20 and the base 2 are electrically joined and fixed.

  Subsequently, the third resin member 8 is placed so as to cover the side surface 24 of the nitride semiconductor light emitting element 20, and a thermosetting process is performed on the third resin member 8. Subsequently, the first resin member 4 is placed outside the third resin member 8 in contact with the third resin member 8, and a thermosetting process is performed on the first resin member 4.

  Finally, the nitride semiconductor light emitting element 20, the first resin member 4, and the third resin member 8 provided on the base 2 are sealed with the sealing resin 6.

  According to this structure, the confinement of the light inside the 1st resin member 4 can be increased, and the conversion efficiency to the long wave side of the wavelength of the light by the fluorescent substance which the 1st resin member 4 contains can be improved. When the conversion efficiency of the wavelength of light increases, the amount of phosphor used can be reduced, and the cost can be reduced. Furthermore, the thermal conductivity between the nitride semiconductor light emitting element 20 and the base 2 is improved, and the heat dissipation is improved. Further, the light emitting device 1 can be downsized and the manufacturing cost can be reduced.

  Although the embodiments of the present invention have been described above, the scope of the present invention is not limited to these embodiments, and various modifications can be made without departing from the spirit of the invention.

  The present invention can be used in a light emitting device and a manufacturing method thereof.

DESCRIPTION OF SYMBOLS 1 Light-emitting device 2 Base | substrate 3 Metal wire 4, 7 1st resin member 5 2nd resin member 6 Sealing resin 8 3rd resin member 9 Bump 20 Nitride semiconductor light emitting element 21 Board | substrate 24 Side surface 24a Rough surface part (surface roughness from circumference | surroundings) Is rough)
25 electrode part 25n n electrode 25p p electrode 30 nitride semiconductor laminated part

Claims (28)

A nitride semiconductor light emitting device including a substrate placed on a substrate and a plurality of nitride semiconductor layers;
A first resin member having a refractive index equal to or lower than that of the substrate, including a phosphor having a function of converting a wavelength of light disposed on a side of the nitride semiconductor light emitting element to a long wave side;
A light emitting device comprising:   The light-emitting device according to claim 1, wherein the nitride semiconductor light-emitting element is electrically connected to the base body by flip-chip mounting.   The light emitting device according to claim 1, wherein the first resin member is in contact with a side surface of the nitride semiconductor light emitting element.   The light emitting device according to claim 1, wherein the first resin member is separated from a side surface of the nitride semiconductor light emitting element.   5. The light emitting device according to claim 4, wherein the first resin member is formed as a molded body and is spaced apart from a side surface of the nitride semiconductor light emitting element.   2. The light emitting device according to claim 1, wherein the first resin member is made of a silicone resin or an epoxy resin as a main component and includes particles having a refractive index equal to or higher than that of the substrate.   The light emitting device according to claim 1, wherein the first resin member has a surface for extracting light, a surface facing a side surface of the nitride semiconductor light emitting element, and a surface facing the base.   2. The light emitting device according to claim 1, wherein the first resin member has a substantially triangular cross-sectional shape perpendicular to a mounting surface of the nitride semiconductor light emitting element of the base. The shape of the nitride semiconductor light emitting element viewed from above facing the mounting surface of the nitride semiconductor light emitting element of the base body is substantially rectangular,
The light emitting device according to claim 1, wherein the first resin member is disposed only on a long side when the nitride semiconductor light emitting element is viewed from above. The nitride semiconductor light emitting device is electrically connected to the base via a metal wire,
The first resin member faces the nitride semiconductor light emitting element mounting surface of the base of the nitride semiconductor light emitting element so that the metal wire does not cross when viewed from above only on the side of the nitride semiconductor light emitting element. The light-emitting device according to claim 1, wherein   The light emitting device according to claim 1, wherein the first resin member is disposed only on a side of the nitride semiconductor light emitting element.   A second resin member is disposed below the nitride semiconductor light emitting element and between the base and the nitride semiconductor light emitting element, the second resin member not including a phosphor and having a low refractive index relative to the substrate. The light-emitting device according to claim 1.   The light emitting device according to claim 12, wherein the second resin member has a lower refractive index than the first resin member.   The light emitting device according to claim 1, wherein a third resin material is disposed on a side of the nitride semiconductor light emitting element and between the nitride semiconductor light emitting element and the first resin member.   The light emitting device according to claim 14, wherein the third resin member has a lower refractive index than the first resin member.   The light emitting device according to claim 14, wherein the third resin member does not include a phosphor.   The light emitting device according to claim 14, wherein the third resin member is made of a silicone resin.   The light-emitting device according to claim 1, wherein the nitride semiconductor light-emitting element includes a portion having a surface roughness rougher than that of a periphery on a side surface thereof. Placing the second resin member on the substrate;
Placing the nitride semiconductor light emitting element on the second resin member;
Curing the second resin member;
Placing the first resin member in contact with the nitride semiconductor light emitting element on the substrate;
Curing the first resin member;
Providing a metal wire straddling between the base and the nitride semiconductor light emitting device;
A method for manufacturing a light-emitting device, comprising: Placing the second resin member on the substrate;
Placing the nitride semiconductor light emitting element on the second resin member;
Disposing a first resin member made of a molded body on the base and spaced apart from the side surface of the nitride semiconductor light emitting element; and
Curing the second resin member;
Providing a metal wire straddling between the base and the nitride semiconductor light emitting device;
A method for manufacturing a light-emitting device, comprising:   20. The method according to claim 19, further comprising a step of providing a sealing resin on the base so as to cover the nitride semiconductor light emitting element, the first resin member, the second resin member, and the metal wire. 20. A method for manufacturing a light emitting device according to 20. Electrically connecting and fixing the nitride semiconductor light emitting element to the substrate by flip chip mounting;
Placing the first resin member in contact with the nitride semiconductor light emitting element on the substrate;
Curing the first resin member;
A method for manufacturing a light-emitting device, comprising: Electrically connecting and fixing the nitride semiconductor light emitting element to the substrate by flip chip mounting;
Disposing a first resin member made of a molded body on the base and spaced apart from the side surface of the nitride semiconductor light emitting element; and
A method for manufacturing a light-emitting device, comprising:   24. The method for manufacturing a light emitting device according to claim 22, further comprising a step of providing a sealing resin on the base so as to cover the nitride semiconductor light emitting element and the first resin member. Placing the second resin member on the substrate;
Placing the nitride semiconductor light emitting element on the second resin member;
Curing the second resin member;
Placing the third resin member on the substrate in contact with the nitride semiconductor light emitting element; and
Curing the third resin member;
Placing the first resin member in contact with the third resin member on the outside of the third resin member;
Curing the first resin member;
Providing a metal wire straddling between the base and the nitride semiconductor light emitting device;
A method for manufacturing a light-emitting device, comprising:   Including a step of providing a sealing resin on the base so as to cover the nitride semiconductor light emitting element, the first resin member, the second resin member, the third resin member, and the metal wire. The method for manufacturing a light emitting device according to claim 25. Electrically connecting and fixing the nitride semiconductor light emitting element to the substrate by flip chip mounting;
Placing the third resin member on the substrate in contact with the nitride semiconductor light emitting element; and
Curing the third resin member;
Placing the first resin member in contact with the third resin member on the outside of the third resin member;
Curing the first resin member;
A method for manufacturing a light-emitting device, comprising:   28. The method of manufacturing a light emitting device according to claim 27, further comprising a step of providing a sealing resin on the base so as to cover the nitride semiconductor light emitting element, the first resin member, and the third resin member. Method.

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