JP2016538359A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016538359A5 JP2016538359A5 JP2016521703A JP2016521703A JP2016538359A5 JP 2016538359 A5 JP2016538359 A5 JP 2016538359A5 JP 2016521703 A JP2016521703 A JP 2016521703A JP 2016521703 A JP2016521703 A JP 2016521703A JP 2016538359 A5 JP2016538359 A5 JP 2016538359A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- chemical mechanical
- mechanical polishing
- abrasive particles
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 42
- 239000000203 mixture Substances 0.000 claims 37
- 239000002245 particle Substances 0.000 claims 37
- 239000000126 substance Substances 0.000 claims 25
- 238000005296 abrasive Methods 0.000 claims 19
- OFJATJUUUCAKMK-UHFFFAOYSA-N Cerium(IV) oxide Chemical compound [O-2]=[Ce+4]=[O-2] OFJATJUUUCAKMK-UHFFFAOYSA-N 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- WPYMKLBDIGXBTP-UHFFFAOYSA-N Benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims 4
- 239000003002 pH adjusting agent Substances 0.000 claims 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims 4
- 239000011146 organic particle Substances 0.000 claims 3
- 239000005711 Benzoic acid Substances 0.000 claims 2
- 108010010803 Gelatin Proteins 0.000 claims 2
- 239000002202 Polyethylene glycol Substances 0.000 claims 2
- 150000001413 amino acids Chemical class 0.000 claims 2
- 239000008365 aqueous carrier Substances 0.000 claims 2
- 235000010233 benzoic acid Nutrition 0.000 claims 2
- 125000002091 cationic group Chemical group 0.000 claims 2
- 229920002678 cellulose Polymers 0.000 claims 2
- 239000001913 cellulose Substances 0.000 claims 2
- 230000001747 exhibiting Effects 0.000 claims 2
- 229920000159 gelatin Polymers 0.000 claims 2
- 239000008273 gelatin Substances 0.000 claims 2
- 235000019322 gelatine Nutrition 0.000 claims 2
- 235000011852 gelatine desserts Nutrition 0.000 claims 2
- 229920001223 polyethylene glycol Polymers 0.000 claims 2
- 229920002338 polyhydroxyethylmethacrylate Polymers 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229920000126 Latex Polymers 0.000 claims 1
- SIOXPEMLGUPBBT-UHFFFAOYSA-N Picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims 1
- 239000004372 Polyvinyl alcohol Substances 0.000 claims 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Tris Chemical group OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims 1
- 239000000654 additive Substances 0.000 claims 1
- 150000003973 alkyl amines Chemical group 0.000 claims 1
- 150000001412 amines Chemical group 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 claims 1
- 239000000412 dendrimer Substances 0.000 claims 1
- 229920000736 dendritic polymer Polymers 0.000 claims 1
- 229920001519 homopolymer Polymers 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxyl anion Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- 239000004816 latex Substances 0.000 claims 1
- 239000000178 monomer Substances 0.000 claims 1
- 229940081066 picolinic acid Drugs 0.000 claims 1
- 229920000058 polyacrylate Polymers 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 229920005553 polystyrene-acrylate Polymers 0.000 claims 1
- 229920002451 polyvinyl alcohol Polymers 0.000 claims 1
- USFMMZYROHDWPJ-UHFFFAOYSA-N trimethyl-[2-(2-methylprop-2-enoyloxy)ethyl]azanium Chemical compound CC(=C)C(=O)OCC[N+](C)(C)C USFMMZYROHDWPJ-UHFFFAOYSA-N 0.000 claims 1
Claims (19)
- 化学機械研磨組成物であって、
（ａ）セリア粒子であり、３０ｎｍ〜１μｍの平均粒子サイズを有し、０．００５〜２ｗｔ％の濃度で前記研磨組成物中に存在する、第１の研磨粒子と、
（ｂ）セリア粒子、表面が修飾されたシリカ粒子、又は有機粒子であり、１ｎｍ〜６０ｎｍの平均粒子サイズを有し、０．００５〜２ｗｔ％の濃度で前記研磨組成物中に存在する、第２の研磨粒子と、
（ｃ）官能化ピリジン、安息香酸、アミノ酸、又はそれらの組み合わせと、
（ｄ）ｐＨ調整剤と、
（ｅ）水性キャリヤーと
を含み、多峰性の粒度分布を示し、ｐＨが３．５〜９である、化学機械研磨組成物。 - 前記第１の研磨粒子が、５０ｎｍ〜７０ｎｍの平均粒子サイズを有する、請求項１に記載の化学機械研磨組成物。
- 前記第２の研磨粒子がセリア粒子であり、２０ｎｍ〜４０ｎｍの平均粒子サイズを有する、請求項１に記載の化学機械研磨組成物。
- 前記研磨組成物中に存在する、前記第１の研磨粒子の濃度と前記第２の研磨粒子の濃度の比が１：１〜５：１である、請求項３に記載の化学機械研磨組成物。
- 前記第２の研磨粒子がセリア粒子であり、１ｎｍ〜１５ｎｍの平均粒子サイズを有する、請求項１に記載の化学機械研磨組成物。
- 前記研磨組成物中に存在する、前記第１の研磨粒子の濃度と前記第２の研磨粒子の濃度の比が３：１〜６：１である、請求項５に記載の化学機械研磨組成物。
- 前記第２の研磨粒子が、表面が修飾されたシリカ粒子であり、１ｎｍ〜４０ｎｍの平均粒子サイズを有する、請求項１に記載の化学機械研磨組成物。
- 前記第２の研磨粒子がカチオン性のシリカ粒子である、請求項７に記載の化学機械研磨組成物。
- 前記研磨組成物中に存在する、前記第１の研磨粒子の濃度と前記第２の研磨粒子の濃度の比が１：１〜１５：１である、請求項７に記載の化学機械研磨組成物。
- 前記第２の研磨粒子が、ゼラチン、ラテックス、セルロース、ポリスチレン、及びポリアクリレートから選択される有機粒子であり、１ｎｍ〜４０ｎｍの平均粒子サイズを有する、請求項１に記載の化学機械研磨組成物。
- 前記第２の研磨粒子がゼラチン粒子である、請求項１０に記載の化学機械研磨組成物。
- 前記研磨組成物中に存在する、前記第１の研磨粒子の濃度と前記第２の研磨粒子の濃度の比が１：１〜３０：１である、請求項１０に記載の化学機械研磨組成物。
- 前記官能化ピリジン、安息香酸、又はアミノ酸がピコリン酸である、請求項１に記載の化学機械研磨組成物。
- 前記ｐＨ調整剤が、アルキルアミン、アルコールアミン、第四級水酸化アミン、アンモニア、又はそれらの組み合わせである、請求項１に記載の化学機械研磨組成物。
- 前記ｐＨ調整剤がトリエタノールアミンである、請求項１４に記載の化学機械研磨組成物。
- 前記研磨組成物のｐＨが３．５〜５である、請求項１に記載の化学機械研磨組成物。
- 化学機械研磨組成物であって、
（ａ）セリア粒子であり、３０ｎｍ〜１μｍの平均粒子サイズを有し、０．００５〜２ｗｔ％の濃度で前記研磨組成物中に存在する、第１の研磨粒子と、
（ｂ）セリア粒子、表面が修飾されたシリカ粒子、又は有機粒子であり、１ｎｍ〜６０ｎｍの平均粒子サイズを有し、０．００５〜２ｗｔ％の濃度で前記研磨組成物中に存在する、第２の研磨粒子と、
（ｃ）ポリエチレングリコール（ＰＥＧ）、ポリビニルアルコール、ポリ（ヒドロキシエチルメタクリレート）、ポリ（ヒドロキシエチルメタクリレート）のコポリマー、セルロース、カチオン性デンドリマー、メタクリロイルオキシエチルトリメチルアンモニウムのモノマー若しくはホモポリマー、又はそれらの組み合わせから選択されるポリマー添加物と、
（ｄ）ｐＨ調整剤と、
（ｅ）水性キャリヤーと
を含み、多峰性の粒度分布を示し、ｐＨが６〜９である、化学機械研磨組成物。 - （ｉ）基材を提供する工程、
（ｉｉ）研磨パッドを提供する工程、
（ｉｉｉ）請求項１に記載の化学機械研磨組成物を提供する工程、
（ｉｖ）前記基材を前記研磨パッド及び前記化学機械研磨組成物に接触させる工程、並びに、
（ｖ）前記基材に対して、前記研磨パッド及び前記化学機械研磨組成物を動かし、前記基材の少なくとも一部をすり減らして、前記基材を研磨する工程
を含む、基材の研磨方法。 - （ｉ）酸化ケイ素の層を含む基材を提供する工程、
（ｉｉ）研磨パッドを提供する工程、
（ｉｉｉ）請求項１〜１６のいずれか１項に記載の化学機械研磨組成物を提供する工程、
（ｉｖ）前記基材を前記研磨パッド及び前記化学機械研磨組成物に接触させる工程、並びに、
（ｖ）前記基材に対して、前記研磨パッド及び前記化学機械研磨組成物を動かし、前記基材の表面の酸化ケイ素の層の少なくとも一部をすり減らして、前記基材を研磨する工程
を含む、基材の研磨方法。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/051,121 | 2013-10-10 | ||
| US14/051,121 US9340706B2 (en) | 2013-10-10 | 2013-10-10 | Mixed abrasive polishing compositions |
| PCT/US2014/058268 WO2015053985A1 (en) | 2013-10-10 | 2014-09-30 | Mixed abrasive polishing compositions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016538359A JP2016538359A (ja) | 2016-12-08 |
| JP2016538359A5 true JP2016538359A5 (ja) | 2017-11-09 |
| JP6542761B2 JP6542761B2 (ja) | 2019-07-10 |
Family
ID=52808764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016521703A Active JP6542761B2 (ja) | 2013-10-10 | 2014-09-30 | 混合研磨材の研磨組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9340706B2 (ja) |
| EP (2) | EP3055376B1 (ja) |
| JP (1) | JP6542761B2 (ja) |
| KR (1) | KR102289577B1 (ja) |
| CN (1) | CN105814163B (ja) |
| TW (1) | TWI516582B (ja) |
| WO (1) | WO2015053985A1 (ja) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9303187B2 (en) * | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
| KR102525356B1 (ko) * | 2014-10-21 | 2023-04-25 | 씨엠씨 머티리얼즈, 인코포레이티드 | 코발트 파임 제어제 |
| US10029345B2 (en) | 2015-07-13 | 2018-07-24 | Cabot Microelectronics Corporation | Methods and compositions for processing dielectric substrate |
| US10128146B2 (en) * | 2015-08-20 | 2018-11-13 | Globalwafers Co., Ltd. | Semiconductor substrate polishing methods and slurries and methods for manufacturing silicon on insulator structures |
| WO2017040571A1 (en) * | 2015-09-03 | 2017-03-09 | Cabot Microelectronics Corporation | Methods and compositions for processing dielectric substrate |
| JP7041135B2 (ja) * | 2016-10-17 | 2022-03-23 | シーエムシー マテリアルズ，インコーポレイティド | 改善されたディッシングおよびパターン選択性を有する酸化物および窒化物選択性のｃｍｐ組成物 |
| US9783702B1 (en) | 2016-10-19 | 2017-10-10 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Aqueous compositions of low abrasive silica particles |
| US11566150B2 (en) | 2017-03-27 | 2023-01-31 | Showa Denko Materials Co., Ltd. | Slurry and polishing method |
| WO2018179061A1 (ja) | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
| CN113637412A (zh) * | 2017-04-17 | 2021-11-12 | 嘉柏微电子材料股份公司 | 自停止性抛光组合物及用于块状氧化物平坦化的方法 |
| CN109251675B (zh) * | 2017-07-13 | 2021-07-30 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| US10584265B2 (en) * | 2017-09-28 | 2020-03-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them |
| US10584266B2 (en) * | 2018-03-14 | 2020-03-10 | Cabot Microelectronics Corporation | CMP compositions containing polymer complexes and agents for STI applications |
| WO2020021680A1 (ja) | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | スラリ及び研磨方法 |
| JP7056728B2 (ja) * | 2018-03-22 | 2022-04-19 | 昭和電工マテリアルズ株式会社 | 研磨液、研磨液セット及び研磨方法 |
| US11572490B2 (en) | 2018-03-22 | 2023-02-07 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set, and polishing method |
| US10988635B2 (en) | 2018-12-04 | 2021-04-27 | Cmc Materials, Inc. | Composition and method for copper barrier CMP |
| KR102241941B1 (ko) * | 2018-12-28 | 2021-04-20 | 주식회사 케이씨텍 | 다결정 실리콘 연마용 cmp 슬러리 조성물 및 그를 이용한 연마 방법 |
| US11326076B2 (en) | 2019-01-25 | 2022-05-10 | Versum Materials Us, Llc | Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives |
| US20200303198A1 (en) * | 2019-03-22 | 2020-09-24 | Fujimi Incorporated | Polishing composition and polishing method |
| KR102453292B1 (ko) * | 2020-07-07 | 2022-10-12 | 주식회사 나노신소재 | 산화세륨 복합분말의 분산 조성물 |
| TW202311461A (zh) * | 2020-07-20 | 2023-03-16 | 美商Ｃｍｃ材料股份有限公司 | 矽晶圓拋光組合物及方法 |
| KR102396281B1 (ko) * | 2021-04-14 | 2022-05-10 | 성균관대학교산학협력단 | 연마용 조성물 및 이의 제조방법 |
| KR102620964B1 (ko) * | 2021-07-08 | 2024-01-03 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 이를 이용한 연마된 물품의 제조방법 |
Family Cites Families (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JPH07223166A (ja) * | 1994-02-10 | 1995-08-22 | Tokyo Jiki Insatsu Kk | 研磨フィルム |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| JP3416855B2 (ja) | 1994-04-15 | 2003-06-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨方法 |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| US6602439B1 (en) | 1997-02-24 | 2003-08-05 | Superior Micropowders, Llc | Chemical-mechanical planarization slurries and powders and methods for using same |
| US5896870A (en) * | 1997-03-11 | 1999-04-27 | International Business Machines Corporation | Method of removing slurry particles |
| US6093649A (en) | 1998-08-07 | 2000-07-25 | Rodel Holdings, Inc. | Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto |
| US5942015A (en) * | 1997-09-16 | 1999-08-24 | 3M Innovative Properties Company | Abrasive slurries and abrasive articles comprising multiple abrasive particle grades |
| US6143662A (en) | 1998-02-18 | 2000-11-07 | Rodel Holdings, Inc. | Chemical mechanical polishing composition and method of polishing a substrate |
| US6358853B2 (en) | 1998-09-10 | 2002-03-19 | Intel Corporation | Ceria based slurry for chemical-mechanical polishing |
| US6270395B1 (en) | 1998-09-24 | 2001-08-07 | Alliedsignal, Inc. | Oxidizing polishing slurries for low dielectric constant materials |
| US6368955B1 (en) * | 1999-11-22 | 2002-04-09 | Lucent Technologies, Inc. | Method of polishing semiconductor structures using a two-step chemical mechanical planarization with slurry particles having different particle bulk densities |
| JP2001192645A (ja) * | 2000-01-14 | 2001-07-17 | Asahi Kasei Corp | 半導体装置製造用の研磨用組成物 |
| JP4123685B2 (ja) | 2000-05-18 | 2008-07-23 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体 |
| US6443811B1 (en) * | 2000-06-20 | 2002-09-03 | Infineon Technologies Ag | Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing |
| JP2002110596A (ja) * | 2000-10-02 | 2002-04-12 | Mitsubishi Electric Corp | 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法 |
| TWI281493B (en) * | 2000-10-06 | 2007-05-21 | Mitsui Mining & Smelting Co | Polishing material |
| US20040192172A1 (en) | 2001-06-14 | 2004-09-30 | Dan Towery | Oxidizing polishing slurries for low dielectric constant materials |
| US6638328B1 (en) | 2002-04-25 | 2003-10-28 | Taiwan Semiconductor Manufacturing Co. Ltd | Bimodal slurry system |
| US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US6896591B2 (en) * | 2003-02-11 | 2005-05-24 | Cabot Microelectronics Corporation | Mixed-abrasive polishing composition and method for using the same |
| JP2004319759A (ja) * | 2003-04-16 | 2004-11-11 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
| CN1849379B (zh) * | 2003-07-11 | 2011-12-14 | 格雷斯公司 | 用于化学机械抛光的磨料颗粒 |
| US20050092620A1 (en) * | 2003-10-01 | 2005-05-05 | Applied Materials, Inc. | Methods and apparatus for polishing a substrate |
| CN1667026B (zh) * | 2004-03-12 | 2011-11-30 | K.C.科技股份有限公司 | 抛光浆料及其制备方法和基板的抛光方法 |
| IL161771A0 (en) * | 2004-05-04 | 2005-11-20 | J G Systems Inc | Method and composition to minimize dishing in semiconductor wafer processing |
| US7368388B2 (en) * | 2005-04-15 | 2008-05-06 | Small Robert J | Cerium oxide abrasives for chemical mechanical polishing |
| JP4872919B2 (ja) * | 2005-11-11 | 2012-02-08 | 日立化成工業株式会社 | 酸化ケイ素用研磨剤、添加液および研磨方法 |
| JP2007266500A (ja) * | 2006-03-29 | 2007-10-11 | Toshiba Corp | タッチアップｃｍｐ用スラリーおよび半導体装置の製造方法 |
| JP2007273910A (ja) * | 2006-03-31 | 2007-10-18 | Fujifilm Corp | 研磨用組成液 |
| US8167684B2 (en) * | 2006-10-24 | 2012-05-01 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry, its preparation method, and use for the same |
| US20080274618A1 (en) * | 2007-05-04 | 2008-11-06 | Ferro Corporation | Polishing composition and method for high selectivity polysilicon cmp |
| CN101463227B (zh) | 2007-12-21 | 2013-06-12 | 安集微电子（上海）有限公司 | 一种用于阻挡层抛光的化学机械抛光液 |
| JP5396047B2 (ja) * | 2008-09-03 | 2014-01-22 | 三井金属鉱業株式会社 | ガラス用研摩材スラリー |
| EP2321378B1 (en) * | 2008-09-12 | 2014-03-05 | Ferro Corporation | Chemical-mechanical polishing compositions and methods of making and using the same |
| KR101084676B1 (ko) | 2008-12-03 | 2011-11-22 | 주식회사 엘지화학 | 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법 |
| KR101075491B1 (ko) | 2009-01-16 | 2011-10-21 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| KR20100091436A (ko) * | 2009-02-10 | 2010-08-19 | 삼성전자주식회사 | 화학적 기계적 연마용 용액 조성물 |
| US8883034B2 (en) * | 2009-09-16 | 2014-11-11 | Brian Reiss | Composition and method for polishing bulk silicon |
| JP5568641B2 (ja) * | 2009-10-13 | 2014-08-06 | エルジー・ケム・リミテッド | Ｃｍｐ用スラリー組成物及び研磨方法 |
| KR101809762B1 (ko) | 2009-11-13 | 2017-12-15 | 바스프 에스이 | 무기 입자 및 중합체 입자를 포함하는 화학적 기계적 연마 (ｃｍｐ) 조성물 |
| US8858819B2 (en) | 2010-02-15 | 2014-10-14 | Air Products And Chemicals, Inc. | Method for chemical mechanical planarization of a tungsten-containing substrate |
| JP2012182299A (ja) * | 2011-03-01 | 2012-09-20 | Hitachi Chem Co Ltd | 半導体基板用研磨液及び半導体基板の研磨方法 |
| SG11201404747UA (en) * | 2012-02-10 | 2014-09-26 | Basf Se | Chemical mechanical polishing (cmp) composition comprising a protein |
| US8859428B2 (en) * | 2012-10-19 | 2014-10-14 | Air Products And Chemicals, Inc. | Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof |
| US8974692B2 (en) * | 2013-06-27 | 2015-03-10 | Air Products And Chemicals, Inc. | Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications |
-
2013
- 2013-10-10 US US14/051,121 patent/US9340706B2/en active Active
-
2014
- 2014-09-30 EP EP14852315.2A patent/EP3055376B1/en active Active
- 2014-09-30 WO PCT/US2014/058268 patent/WO2015053985A1/en active Application Filing
- 2014-09-30 CN CN201480067701.5A patent/CN105814163B/zh active Active
- 2014-09-30 KR KR1020167011919A patent/KR102289577B1/ko active IP Right Grant
- 2014-09-30 EP EP18208724.7A patent/EP3470487B1/en active Active
- 2014-09-30 JP JP2016521703A patent/JP6542761B2/ja active Active
- 2014-10-09 TW TW103135182A patent/TWI516582B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2016538359A5 (ja) | ||
| JP2017505532A5 (ja) | ||
| JP2018513229A5 (ja) | ||
| JP2018512475A5 (ja) | ||
| JP2018513552A5 (ja) | ||
| JP2006278522A5 (ja) | ||
| JP6530401B2 (ja) | 窒化ケイ素の選択的な除去のためのｃｍｐ組成物及び方法 | |
| TWI609076B (zh) | 拋光粒子-分散層複合體及包括其之拋光漿料組合物 | |
| TW201723136A (zh) | 添加劑組合物及包括此的陽性拋光料漿組合物 | |
| JP7067614B2 (ja) | 研磨液、研磨液セット及び研磨方法 | |
| JP2013505145A5 (ja) | ||
| JP2008537704A5 (ja) | ||
| TW201038690A (en) | Abrasive compositions for chemical mechanical polishing and methods for using same | |
| TW201343825A (zh) | 研磨劑、研磨劑套組及基體的研磨方法 | |
| JP2016135882A5 (ja) | ||
| TWI413678B (zh) | 研磨液 | |
| JP2013511144A5 (ja) | ||
| JP2013527879A5 (ja) | ||
| JP2016523989A5 (ja) | ||
| KR102039319B1 (ko) | 중합체성 폴리아민을 포함하는 화학적 기계적 폴리싱 (cmp) 조성물 | |
| JP2015523438A5 (ja) | ||
| JP2014515777A5 (ja) | ||
| JP2016524520A5 (ja) | ||
| JP2017531311A (ja) | ゲルマニウムの化学機械研磨 | |
| Penta et al. | Role of poly (diallyldimethylammonium chloride) in selective polishing of polysilicon over silicon dioxide and silicon nitride films |