JP2016534199A - 色安定性マンガンドープ蛍光体を調製する方法 - Google Patents
色安定性マンガンドープ蛍光体を調製する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 36
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 124
- -1 hexafluorosilicic acid Chemical compound 0.000 claims abstract description 14
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 14
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 10
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- 229910052718 tin Inorganic materials 0.000 claims abstract description 8
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 8
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 7
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 7
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 7
- 229910052738 indium Inorganic materials 0.000 claims abstract description 6
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 5
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 5
- 229910052701 rubidium Inorganic materials 0.000 claims abstract description 5
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 32
- 239000000203 mixture Substances 0.000 claims description 28
- 229910052731 fluorine Inorganic materials 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 15
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 13
- 239000011737 fluorine Substances 0.000 claims description 13
- 238000011282 treatment Methods 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 3
- 150000004761 hexafluorosilicates Chemical class 0.000 claims description 2
- 239000011572 manganese Substances 0.000 description 44
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 20
- 239000000243 solution Substances 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 229910052791 calcium Inorganic materials 0.000 description 15
- 229910052712 strontium Inorganic materials 0.000 description 15
- 239000008393 encapsulating agent Substances 0.000 description 13
- 230000005855 radiation Effects 0.000 description 13
- 229910052788 barium Inorganic materials 0.000 description 12
- 239000002245 particle Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000007800 oxidant agent Substances 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 229910052765 Lutetium Inorganic materials 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000013112 stability test Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 229910018287 SbF 5 Inorganic materials 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 238000011481 absorbance measurement Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 238000000790 scattering method Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 description 1
- 229910016569 AlF 3 Inorganic materials 0.000 description 1
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- 229910015999 BaAl Inorganic materials 0.000 description 1
- 101100042630 Caenorhabditis elegans sin-3 gene Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910017639 MgSi Inorganic materials 0.000 description 1
- 101100496858 Mus musculus Colec12 gene Proteins 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- FNCIDSNKNZQJTJ-UHFFFAOYSA-N alumane;terbium Chemical compound [AlH3].[Tb] FNCIDSNKNZQJTJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002591 computed tomography Methods 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000012430 stability testing Methods 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
- C09K11/617—Silicates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
- C09K11/674—Halogenides
- C09K11/675—Halogenides with alkali or alkaline earth metals
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/02—Combinations of only two kinds of elements
- F21V13/08—Combinations of only two kinds of elements the elements being filters or photoluminescent elements and reflectors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
- F21V3/10—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by coatings
- F21V3/12—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by coatings the coatings comprising photoluminescent substances
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
- F21V9/38—Combination of two or more photoluminescent elements of different materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
Abstract
Description
式中、
AはLi、Na、K、Rb、Cs、R4又はそれらの組合せであり、
MはSi、Ge、Sn、Ti、Zr、Al、Ga、In、Sc、Y、La、Nb、Ta、Bi、Gd又はそれらの組合せであり、
RはH、低級アルキル又はそれらの組合せであり、
xは[MFy]イオンの電荷の絶対値であり、
yは5、6又は7である。
本方法は、式Iの蛍光体をヘキサフルオロケイ酸を含む溶液と接触させる工程と、未処理の式Iの蛍光体に比べて色安定性が改善された処理後の式Iの蛍光体を単離する工程とを含む。
(Ba,Sr,Ca)5(PO4)3(Cl,F,Br,OH):Eu2+,Mn2+、(Ba,Sr,Ca)BPO5:Eu2+,Mn2+、(Sr,Ca)10(PO4)6*νB2O3:Eu2+(式中、0<ν≦1)、Sr2Si3O8*2SrCl2:Eu2+、(Ca,Sr,Ba)3MgSi2O8:Eu2+,Mn2+、BaAl8O13:Eu2+、2SrO*0.84P2O5*0.16B2O3:Eu2+、(Ba,Sr,Ca)MgAl10O17:Eu2+,Mn2+、(Ba,Sr,Ca)Al2O4:Eu2+、(Y,Gd,Lu,Sc,La)BO3:Ce3+,Tb3+、ZnS:Cu+,Cl-、ZnS:Cu+,Al3+、ZnS:Ag+,Cl-、ZnS:Ag+,Al3+、(Ba,Sr,Ca)2Si1-ξO4-2ξ:Eu2+(式中、0≦ξ≦0.2)、(Ba,Sr,Ca)2(Mg,Zn)Si2O7:Eu2+、(Sr,Ca,Ba)(Al,Ga,In)2S4:Eu2+、(Y,Gd,Tb,La,Sm,Pr,Lu)3(Al,Ga)5-αO12-3/2α:Ce3+(式中、0≦α≦0.5)、(Ca,Sr)8(Mg,Zn)(SiO4)4Cl2:Eu2+,Mn2+、Na2Gd2B2O7:Ce3+,Tb3+、(Sr,Ca,Ba,Mg,Zn)2P2O7:Eu2+,Mn2+、(Gd,Y,Lu,La)2O3:Eu3+,Bi3+、(Gd,Y,Lu,La)2O2S:Eu3+,Bi3+、(Gd,Y,Lu,La)VO4:Eu3+,Bi3+、(Ca,Sr)S:Eu2+,Ce3+、SrY2S4:Eu2+、CaLa2S4:Ce3+、(Ba,Sr,Ca)MgP2O7:Eu2+,Mn2+、(Y,Lu)2WO6:Eu3+,Mo6+、(Ba,Sr,Ca)βSiγNμ:Eu2+(式中、2β+4γ=3μ)、Ca3(SiO4)Cl2:Eu2+、(Lu,Sc,Y,Tb)2-u-vCevCa1+uLiwMg2-wPw(Si,Ge)3-wO12-u/2(式中、−0.5≦u≦1、0<v≦0.1、及び0≦w≦0.2)、(Y,Lu,Gd)2-φCaφSi4N6+φC1-φ:Ce3+(式中、0≦φ≦0.5)、Eu2+及び/又はCe3+がドープされた(Lu,Ca,Li,Mg,Y)α−SiAlON、(Ca,Sr,Ba)SiO2N2:Eu2+,Ce3+、3.5MgO*0.5MgF2*GeO2:Mn4+、Ca1-c-fCecEufAl1+cSi1-cN3(式中、0<c≦0.2、0≦f≦0.2)、Ca1-h-rCehEurAl1-h(Mg,Zn)hSiN3(式中、0<h≦0.2、0≦r≦0.2)、Ca1-2s-tCes(Li,Na)sEutAlSiN3(式中、0≦s≦0.2、0≦f≦0.2、s+t>0)及びCa1-σ-χ-φCeσ(Li,Na)χEuφAl1+σ-χSi1-σ+χN3(式中、0≦σ≦0.2、0<χ≦0.4、0≦φ≦0.2)
を含む。
アニーリングの手順
PFS蛍光体を炉チャンバに入れた。機械式ポンプを用いて炉チャンバを排気し、窒素、及び窒素とフッ素の混合物を用いて複数回パージした。複数のポンプ及びパージサイクルの後、炉チャンバを、20%のフッ素ガス及び80%の窒素ガスを含む雰囲気で満たし、約1気圧の圧力にした。次いで、チャンバを所望のアニール温度まで加熱した。約8時間保持した後、チャンバを室温まで冷却した。フッ素と窒素の混合物を排出し、チャンバを窒素で充填し、窒素で複数回パージして、チャンバを開放する前に確実にフッ素ガスを完全除去した。
48%HF(w/w)を用いてHFを含む水溶液を調製し、35%H2SiF6(w/w)を用いてH2SiF6を含む溶液を調製した。K2SiF6を用いる場合には、K2SiF6を溶液に加え、加えた後、溶液を30分間攪拌し、次いで、2.7ミクロンの孔径の濾紙によって重力濾過し、溶解していないK2SiF6を除去した。
蛍光体(3g.)を溶液(26ml)にゆっくりと加え、混合物を20分間攪拌した。蛍光体を1分間にわたって沈殿させ、次いで浮遊物を傾瀉し、処理後の蛍光体を濾過し、アセトンで3回洗浄し、真空下で3時間乾燥させ、ふるい分けた。
蛍光体の粉末を、二成分系メチルシリコーン結合剤(RTV−615、Momentive Performance Materials)中に蛍光体0.9g対シリコーン(成分A+B)0.825gの割合で混合することによって、高温高湿(HTHH)処理用の試料を作製した。次いで、蛍光体/シリコーン混合物をアルミニウムの試料ホルダ中に注ぎ、90℃で20分間硬化させた。対照試料は窒素下で保管し、HTHH条件に曝す試料は、85℃/85%RHに制御された雰囲気チャンバに入れた。これらのHTHHの試料を300時間後に取り出し、450nm励起におけるルミネセンス強度を対照試料のものと比較した。
446nmで発光するレーザダイオードを、その他端にコリメータを有する光学ファイバに結合した。出力は310mWであり、試料でのビーム直径は700ミクロンであった。これは、試料表面における80W/cm2のフラックスに相当する。散乱されたレーザからの放射と励起された蛍光体からの発光の組合せである分光分布(SPD)スペクトルを、1メートル(直径)の積分球で収集し、データを分光計のソフトウェア(Specwin)で処理する。レーザ及び蛍光体の発光からの積分出力を(それぞれ400nm〜500nm及び550nm〜700nmのSPDを積分することによって)2分間隔で記録した。レーザの熱的安定化による影響を避けるために、最初の90分の測定は破棄する。レーザ損傷による強度損失の割合は、以下のように計算する。
水性の処理に曝していない対照材料は、合成したままのPFS蛍光体、すなわち熱処理していない材料(比較例1)、及びF2アニーリング後のPFS蛍光体(比較例3)を含んでいた。また同じ材料を、米国特許第8252613号に記載されるように、K2SiF6を含むHF溶液で処理した(比較例2及び4)。
実施例1〜5では、合成したままのPFS蛍光体(熱処理せず)を、表1に示す水溶液で処理した。実施例6及び7では、PFS蛍光体をフッ素雰囲気下でアニールした後、表1に示すヘキサフルオロケイ酸溶液で処理した。
表3は、粉末表面の元素解析を行い、約0.1原子%の検出限界を有するXPS測定の結果を示している。プラークの吸光度測定と整合して、XPSは、処理後に表面[Mn]が測定システムの検出限界まで低下するさらなる証拠を示している。さらに、処理後には表面の炭素及び酸素も減少する。
Claims (22)
- 次の式I
Ax[MFy]:Mn4+ (I)
(式中、AはLi、Na、K、Rb、Cs、R4又はそれらの組合せであり、MはSi、Ge、Sn、Ti、Zr、Al、Ga、In、Sc、Y、La、Nb、Ta、Bi、Gd又はそれらの組合せであり、RはH、低級アルキル又はそれらの組合せであり、xは[MFy]イオンの電荷の絶対値であり、yは5、6又は7である。)のMn4+ドープ蛍光体の色安定性を改善する方法であって、
式Iの蛍光体をヘキサフルオロケイ酸を含む溶液と接触させる工程と、
未処理の蛍光体に比べて色安定性が改善された処理後の蛍光体を単離する工程と
を含む方法。 - 溶液が式Ax[MFy]の塩をさらに含む、請求項1記載の方法。
- 溶液がフッ化水素酸を含まない、請求項1記載の方法。
- 溶液がフッ化水素酸をさらに含む、請求項1記載の方法。
- 蛍光体を高温でフッ素ガスに曝すことをさらに含む、請求項1記載の方法。
- MがSi、Ge、Sn、Ti、Zr又はそれらの組合せである、請求項1記載の方法。
- Mn4+ドープ蛍光体がK2SiF6:Mn4+である、請求項1記載の方法。
- 請求項1記載の方法で調製された色安定性Mn4+ドープ蛍光体。
- 請求項1記載の方法で調製された色安定性Mn4+ドープ蛍光体を含む蛍光体ブレンド。
- 半導体光源と、
光源に放射結合した蛍光体材料であって、請求項1記載の方法で調製された色安定性Mn4+ドープ蛍光体を含む蛍光体材料と
を含む照明装置。 - 式K2SiF6:Mn4+の複合フッ化物化合物の色安定性を改善する方法であって、蛍光体をヘキサフルオロケイ酸を含む溶液と接触させる工程と、未処理の式K2SiF6:Mn4+の蛍光体に比べて色安定性が改善された処理後の式K2SiF6:Mn4+の蛍光体を単離する工程とを含む方法。
- 溶液がK2SiF6をさらに含む、請求項11記載の方法。
- 溶液がフッ化水素酸を含まない、請求項11記載の方法。
- 溶液がフッ化水素酸をさらに含む、請求項11記載の方法。
- 蛍光体を高温でフッ素ガスに曝すことをさらに含む、請求項11記載の方法。
- 照明装置であって、
半導体光源と、
光源に放射結合した蛍光体材料であって、次の式I
Ax[MFy]:Mn4+ (I)
(式中、AはLi、Na、K、Rb、Cs、R4又はそれらの組合せであり、MはSi、Ge、Sn、Ti、Zr、Al、Ga、In、Sc、Y、La、Nb、Ta、Bi、Gd又はそれらの組合せであり、RはH、低級アルキル又はそれらの組合せであり、xは[MFy]イオンの電荷の絶対値であり、yは5、6又は7である。)の色安定性Mn4+ドープ蛍光体を含む蛍光体材料であって、色安定性Mn4+ドープ蛍光体が、式Iの蛍光体をヘキサフルオロケイ酸を含む溶液と接触させ、未処理の式Iの蛍光体に比べて色安定性が改善された処理後の式Iの蛍光体を単離することを含む方法で調製される蛍光体材料と
を含む照明装置。 - 溶液がK2SiF6をさらに含む、請求項16記載の照明装置。
- 溶液がフッ化水素酸を含まない、請求項16記載の照明装置。
- 溶液がフッ化水素酸をさらに含む、請求項16記載の照明装置。
- 蛍光体を高温でフッ素ガスに曝すことをさらに含む、請求項16記載の照明装置。
- MがSi、Ge、Sn、Ti、Zr又はそれらの組合せである、請求項16記載の照明装置。
- Mn4+ドープ蛍光体が、K2SiF6:Mn4+である、請求項16記載の照明装置。
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AU2014308596A1 (en) | 2016-03-03 |
US20150054400A1 (en) | 2015-02-26 |
PH12016500292A1 (en) | 2016-05-02 |
AU2018201820A1 (en) | 2018-04-12 |
MX2016002275A (es) | 2016-05-31 |
TWI643937B (zh) | 2018-12-11 |
EP3036306B1 (en) | 2019-11-27 |
JP6420837B2 (ja) | 2018-11-07 |
CA2921044C (en) | 2019-01-08 |
CN105452418B (zh) | 2018-02-13 |
US9399732B2 (en) | 2016-07-26 |
BR112016002023A2 (pt) | 2017-08-01 |
EP3036306A1 (en) | 2016-06-29 |
TW201608009A (zh) | 2016-03-01 |
KR101931213B1 (ko) | 2018-12-21 |
WO2015027202A1 (en) | 2015-02-26 |
KR20160045788A (ko) | 2016-04-27 |
MY174710A (en) | 2020-05-10 |
CN105452418A (zh) | 2016-03-30 |
CA2921044A1 (en) | 2015-02-26 |
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