JP6694398B2 - 色安定性赤色発光蛍光体 - Google Patents
色安定性赤色発光蛍光体 Download PDFInfo
- Publication number
- JP6694398B2 JP6694398B2 JP2016572305A JP2016572305A JP6694398B2 JP 6694398 B2 JP6694398 B2 JP 6694398B2 JP 2016572305 A JP2016572305 A JP 2016572305A JP 2016572305 A JP2016572305 A JP 2016572305A JP 6694398 B2 JP6694398 B2 JP 6694398B2
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- temperature
- led
- color
- precursor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 89
- 239000002243 precursor Substances 0.000 claims description 24
- 229910052731 fluorine Inorganic materials 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 20
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 17
- 239000011737 fluorine Substances 0.000 claims description 17
- 239000007800 oxidant agent Substances 0.000 claims description 15
- 229910052744 lithium Inorganic materials 0.000 claims description 10
- 229910052700 potassium Inorganic materials 0.000 claims description 10
- 229910052708 sodium Inorganic materials 0.000 claims description 10
- 229910052727 yttrium Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052701 rubidium Inorganic materials 0.000 claims description 9
- 229910052792 caesium Inorganic materials 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 230000002194 synthesizing effect Effects 0.000 claims description 2
- 239000011572 manganese Substances 0.000 description 68
- 239000000203 mixture Substances 0.000 description 32
- 239000000463 material Substances 0.000 description 30
- 229910052791 calcium Inorganic materials 0.000 description 22
- 229910052712 strontium Inorganic materials 0.000 description 20
- 229910052788 barium Inorganic materials 0.000 description 18
- 238000001816 cooling Methods 0.000 description 16
- 239000008393 encapsulating agent Substances 0.000 description 15
- 229920001296 polysiloxane Polymers 0.000 description 15
- 229910052748 manganese Inorganic materials 0.000 description 14
- 229920000642 polymer Polymers 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 230000005855 radiation Effects 0.000 description 12
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 239000000523 sample Substances 0.000 description 9
- 239000000178 monomer Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 229910052749 magnesium Inorganic materials 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000003085 diluting agent Substances 0.000 description 5
- -1 fluoride ions Chemical class 0.000 description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910016569 AlF 3 Inorganic materials 0.000 description 3
- 229910052765 Lutetium Inorganic materials 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000013068 control sample Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 2
- 229910003564 SiAlON Inorganic materials 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000001045 blue dye Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007850 fluorescent dye Substances 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000001044 red dye Substances 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- 229910015999 BaAl Inorganic materials 0.000 description 1
- 229910004573 CdF 2 Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910020313 ClF Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 241000120527 Kemerovo virus Species 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910017639 MgSi Inorganic materials 0.000 description 1
- 101100175321 Mus musculus Gdf6 gene Proteins 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 229920000291 Poly(9,9-dioctylfluorene) Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910018287 SbF 5 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910008449 SnF 2 Inorganic materials 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 206010003549 asthenia Diseases 0.000 description 1
- 238000007630 basic procedure Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002591 computed tomography Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000001046 green dye Substances 0.000 description 1
- 239000001056 green pigment Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- NKVDKFWRVDHWGC-UHFFFAOYSA-N iridium(3+);1-phenylisoquinoline Chemical compound [Ir+3].C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 NKVDKFWRVDHWGC-UHFFFAOYSA-N 0.000 description 1
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
- C09K11/617—Silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
- C09K11/615—Halogenides
- C09K11/616—Halogenides with alkali or alkaline earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Liquid Crystal (AREA)
Description
Ax(M1-z,Mnz)Fy I
式中、
Aは、Li、Na、K、Rb、Cs又はそれらの組合せであり、
Mは、Si、Ge、Sn、Ti、Zr、Al、Ga、In、Sc、Hf、Y、La、Nb、Ta、Bi、Gd又はそれらの組合せであり、
xは、[MFy]イオンの電荷の絶対値であり、
yは、5、6、又は7であり、
0.03≦z≦0.10である。
(A)A2[MF5]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択され、MはAl、Ga、In及びその組合せから選択される)、
(B)A3[MF6]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択され、MはAl、Ga、In及びその組合せから選択される)、
(C)Zn2[MF7]:Mn4+(式中、MはAl、Ga、In及びその組合せから選択される)、
(D)A[In2F7]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択される)、
(E)A2[MF6]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択され、MはSi、Ge、Sn、Ti、Zr及びその組合せから選択される)、
(F)E[MF6]:Mn4+(式中、EはMg、Ca、Sr、Ba、Zn及びその組合せから選択され、MはSi、Ge、Sn、Ti、Zr及びその組合せから選択される)、
(G)Ba0.65Zr0.35F2.70:Mn4+、及び
(H)A3[ZrF7]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択される)。
蛍光体をこの溶液と接触させる温度は、約20℃〜約50℃の範囲である。色安定性蛍光体を生産するために必要な時間は、約1分〜約5時間、特に約5分〜約1時間の範囲である。HF水溶液中のフッ化水素酸の濃度は、約20重量/重量%〜約70重量/重量%、特に約40重量/重量%〜約70重量/重量%の範囲である。溶液の濃度がより低いと、蛍光体の収率が低くなる場合がある。
((Sr1-z(Ca,Ba,Mg,Zn)z)1-(x+w)(Li,Na,K,Rb)wCex)3(Al1-ySiy)O4+y+3(x-w)F1-y-3(x-w)(0<x≦0.10,0≦y≦0.5,0≦z≦0.5,0≦w≦x);
(Ca,Ce)3Sc2Si3O12(CaSiG);
(Sr,Ca,Ba)3Al1-xSixO4+xF1-x:Ce3+(SASOF));
(Ba,Sr,Ca)5(PO4)3(Cl,F,Br,OH):Eu2+,Mn2+;(Ba,Sr,Ca)BPO5:Eu2+,Mn2+;(Sr,Ca)10(PO4)6*νB2O3:Eu2+(0<ν≦1);Sr2Si3O8*2SrCl2:Eu2+;(Ca,Sr,Ba)3MgSi2O8:Eu2+,Mn2+;BaAl8O13:Eu2+;2SrO*0.84P2O5*0.16B2O3:Eu2+;(Ba,Sr,Ca)MgAl10O17:Eu2+,Mn2+;(Ba,Sr,Ca)Al2O4:Eu2+;(Y,Gd,Lu,Sc,La)BO3:Ce3+,Tb3+;ZnS:Cu+,Cl-;ZnS:Cu+,Al3+;ZnS:Ag+,Cl-;ZnS:Ag+,Al3+;(Ba,Sr,Ca)2Si1-ξO4-2ξ:Eu2+(0.2≦ξ≦0.2);(Ba,Sr,Ca)2(Mg,Zn)Si2O7:Eu2+;(Sr,Ca,Ba)(Al,Ga,In)2S4:Eu2+;(Y,Gd,Tb,La,Sm,Pr,Lu)3(Al,Ga)5-αO12-3/2α:Ce3+(0≦α≦0.5);(Ca,Sr)8(Mg,Zn)(SiO4)4Cl2:Eu2+,Mn2+;Na2Gd2B2O7:Ce3+,Tb3+;(Sr,Ca,Ba,Mg,Zn)2P2O7:Eu2+,Mn2+;(Gd,Y,Lu,La)2O3:Eu3+,Bi3+;(Gd,Y,Lu,La)2O2S:Eu3+,Bi3+;(Gd,Y,Lu,La)VO4:Eu3+,Bi3+;(Ca,Sr)S:Eu2+,Ce3+;SrY2S4:Eu2+;CaLa2S4:Ce3+;(Ba,Sr,Ca)MgP2O7:Eu2+,Mn2+;(Y,Lu)2WO6:Eu3+,Mo6+;(Ba,Sr,Ca)βSiγNμ:Eu2+(2β+4γ=3μ);(Ba,Sr,Ca)2Si5-xAlxN8-xOx:Eu2+(0≦x≦2);Ca3(SiO4)Cl2:Eu2+;(Lu,Sc,Y,Tb)2-u-vCevCa1+uLiwMg2-wPw(Si,Ge)3-wO12-u/2(−0.5≦u≦1,0<v≦0.1,かつ0≦w≦0.2);(Y,Lu,Gd)2-φCaφSi4N6+φC1-φ:Ce3+,(0≦φ≦0.5);Eu2+及び/又はCe3+でドープした(Lu,Ca,Li,Mg,Y),α−SiAlON;(Ca,Sr,Ba)SiO2N2:Eu2+,Ce3+;β−SiAlON:Eu2+,3.5MgO*0.5MgF2*GeO2:Mn4+;(Sr,Ca,Ba)AlSiN3:Eu2+;(Sr,Ca,Ba)3SiO5:Eu2+;Ca1-c-fCecEufAl1+cSi1-cN3(0≦c≦0.2,0≦f≦0.2);Ca1-h-rCehEurAl1-h(Mg,Zn)hSiN3(0≦h≦0.2,0≦r≦0.2);
Ca1-2s-tCes(Li,Na)sEutAlSiN3(0≦s≦0.2,0≦f≦0.2,s+t>0);及び
Ca1-σ-χ-φCeσ(Li,Na)χEuφAl1+σ-χSi1-σ+χN3(0≦σ≦0.2,0≦χ≦0.4,0≦φ≦0.2)。
シリコーンテープ試料調製
試料は、500mgの試験しようとする物質を、1.50gのシリコーン(Sylgard 184)と混合することにより調製した。混合物を、真空チャンバーで約15分間脱気した。混合物(0.70g)を、円盤状のテンプレート(直径28.7mm及び厚さ0.79mm)に注ぎ、90℃で30分間焼成した。試料を、試験用におよそ5mm×5mmの大きさの正方形に切断した。
高光束条件
446nmで発光するレーザーダイオードを光ファイバーに接続し、その他方端部をコリメータに接続した。出力は310mWだった。試料でのビーム直径は、700ミクロンだった。これは、試料表面では80W/cm2のフラックスと等しい。レーザーからの散乱放射及び励起蛍光体からの発光の組合せであるスペクトルパワー分布(SPD)スペクトルを、1メートル(直径)の積分球で収集し、データを分光計ソフトウェア(Specwin)で処理する。SPDをそれぞれ400nm〜500nm及び550nm〜700nmまで積算することにより、約21時間の期間にわたって、レーザーの積算出力及び蛍光体発光を2分間隔で記録した。レーザーの熱安定化による効果を回避するために、測定の最初の90分間を廃棄する。レーザー損傷による強度損失の割合は、以下のように計算される:
蛍光体粉末を、0.825gのシリコーンに対して0.9gの蛍光体の比率で(A+B部)、2部のメチルシリコーン結合剤(RTV−615、Momentive Performance Materials社)に混合することにより、高温高湿(HTHH)処理用の試料を製作した。その後、蛍光体/シリコーン混合物を、アルミニウム試料ホルダに注ぎ、90℃で20分間硬化させる。対照試料を窒素下で保管し、HTHH条件に供するための試料を、85℃/85%RHに制御した雰囲気のチャンバーに配置した。それらHTHH試料を、定期的に取り出し、450nm励起下でのルミネセンス強度を、対照試料のルミネッセンス強度と比較した。
0.91重量%〜1.19重量%の範囲のマンガンレベルを有するK2SiF6:Mn4+の調製
ビーカーA〜Dの出発物質の量及び分布が表1に示されている。実施例4の場合、5mLのアセトンを、ビーカーBにさらに添加した。手順:ビーカーAを、激しく撹拌し、ビーカーBの内容物を、75mL/分の速度で30秒間にわたって滴加し、その後、反応時間の残りにわたって60mL/分の速度で滴加した。ビーカーDの内容物を、ビーカーBの内容物を添加し始めた20秒後に、13mL/分の速度でビーカーAに滴加した。ビーカーCの内容物を、ビーカーBの内容物を添加し始めた30秒後に、13mL/分の速度でビーカーAに滴加した。沈殿物を5分間温浸し、撹拌を停止した。上清をデカントし、沈殿物を、減圧ろ過し、酢酸で1回及びアセトンで2回すすぎ、その後減圧下で乾燥した。乾燥粉末を、44ミクロンメッシュでふるい分けし、540℃にて8時間20%F2下でアニールした。アニールした蛍光体を、K2SiF6で飽和させた49%HF溶液で洗浄し、減圧下で乾燥し、ふるい分けした。
物質の全重量に基づいて0.84重量%のMnを含有するMnドープフルオロケイ酸カリウムを、10psiaの20%F2/80%N2下の540℃の炉で8時間アニールした。アニールした蛍光体を、K2SiF6で飽和させた49%HF溶液で洗浄し、減圧下で乾燥し、ふるいにかけた。蛍光体及びアニールした未処理の市販試料を、高光束条件下で試験した。結果は表3に示されている。
0.9重量%及び1.25重量%のマンガンを有するK2SiF6:Mn4+の特性
Mnドープフルオロケイ酸カリウム試料を、実施例1〜4と同様に調製及び処理した。量子効率及び減衰時間を測定し、処置前後のMnの重量%をICP−MSで決定した。結果は表4に示されている。高Mn試料の量子効率が向上し、濃度消光の発生/効果が低減されたことを理解することができる。少なくともQEの向上は、より低いMnレベルで観察されたものよりも著しく高い。例えば、0.84重量%のMnを有する比較例1の蛍光体のQEは、100(相対的)から107(相対的)まで約7%増加で増加したが、表4に示されている増加は、0.9重量%のMnを含有する試料では約15%であり、1.25重量%のMnを含有する試料では約20%である。
0.70%のマンガン含有量(誘導結合プラズマで決定)を有する市販のPFS蛍光体を、10psiaの窒素(80%)及びフッ素(20%)雰囲気下の炉に配置し、540℃で8時間加熱した。8時間後、温度を毎分10℃の速度で低下させた。アニールした蛍光体を、K2SiF6で飽和させた49%HF溶液で洗浄し、減圧下で乾燥し、ふるいにかけた。
アニール後の徐冷
0.70%のマンガン含有量(誘導結合プラズマで決定)を有する市販のPFS蛍光体を、10psiaの窒素(80%)及びフッ素(20%)雰囲気下の炉に配置し、540℃で8時間加熱した。8時間後、温度を毎分1℃の速度で低下させた。アニールした蛍光体を、K2SiF6で飽和させた49%HF溶液で洗浄し、減圧下で乾燥し、ふるいにかけた。
Claims (7)
- Mn4+ドープ蛍光体の合成方法であって、以下の式Iの前駆体を、ガス状のフッ素含有酸化剤と100℃以上の温度で接触させて、Mn4+ドープ蛍光体を形成することを含む方法。
Ax(M1-z,Mnz)Fy I
式中、
Aは、Li、Na、K、Rb、Cs又はそれらの組合せであり、
Mは、Si、Ge、Sn、Ti、Zr、Al、Ga、In、Sc、Hf、Y、La、Nb、Ta、Bi、Gd又はそれらの組合せであり、
xは、[MFy]イオンの電荷の絶対値であり、
yは、5、6、又は7であり、
0.03≦z≦0.10であり、
Mn 4+ ドープ蛍光体がK 2 SiF 6 :Mn 4+ である。 - 0.035≦z≦0.060である、請求項1に記載の方法。
- 0.035≦z≦0.0510である、請求項1に記載の方法。
- 蛍光体の量子効率が前駆体の量子効率よりも8%以上高い、請求項1に記載の方法。
- 蛍光体の量子効率が前駆体の量子効率よりも20%以上高い、請求項1に記載の方法。
- 温度が500℃〜600℃の範囲内の温度である、請求項1に記載の方法。
- フッ素含有酸化剤がF2である、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/302,823 US9385282B2 (en) | 2014-06-12 | 2014-06-12 | Color stable red-emitting phosphors |
US14/302,823 | 2014-06-12 | ||
PCT/US2015/034938 WO2015191607A2 (en) | 2014-06-12 | 2015-06-09 | Color stable red-emitting phosphors |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017520644A JP2017520644A (ja) | 2017-07-27 |
JP6694398B2 true JP6694398B2 (ja) | 2020-05-13 |
Family
ID=54545419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016572305A Active JP6694398B2 (ja) | 2014-06-12 | 2015-06-09 | 色安定性赤色発光蛍光体 |
Country Status (12)
Country | Link |
---|---|
US (1) | US9385282B2 (ja) |
EP (1) | EP3155066B1 (ja) |
JP (1) | JP6694398B2 (ja) |
KR (1) | KR102492385B1 (ja) |
CN (1) | CN106459753B (ja) |
AU (1) | AU2015274758B2 (ja) |
BR (1) | BR112016028806A8 (ja) |
CA (1) | CA2952250C (ja) |
MX (1) | MX2016016390A (ja) |
MY (1) | MY174279A (ja) |
TW (1) | TWI618778B (ja) |
WO (1) | WO2015191607A2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9868898B2 (en) * | 2013-03-15 | 2018-01-16 | General Electric Company | Processes for preparing color stable red-emitting phosphors |
US9371481B2 (en) * | 2014-06-12 | 2016-06-21 | General Electric Company | Color stable red-emitting phosphors |
CA2967642C (en) * | 2014-11-21 | 2023-03-07 | General Electric Company | Color stable red-emitting phosphors |
KR102167629B1 (ko) * | 2015-05-18 | 2020-10-20 | 제네럴 일렉트릭 컴퍼니 | Mn 도핑된 플루오르화물 인광체의 제조 방법 |
US10024982B2 (en) * | 2015-08-06 | 2018-07-17 | Lawrence Livermore National Security, Llc | Scintillators having the K2PtCl6 crystal structure |
US9929321B2 (en) * | 2016-08-04 | 2018-03-27 | Kabushiki Kaisha Toshiba | Phosphor, producing method thereof and light-emitting device employing the phosphor |
US10193030B2 (en) * | 2016-08-08 | 2019-01-29 | General Electric Company | Composite materials having red emitting phosphors |
US10731076B2 (en) | 2016-12-01 | 2020-08-04 | Current Lighting Solutions, Llc | Processes for preparing stable red-emitting phosphors |
JP6940777B2 (ja) | 2018-12-26 | 2021-09-29 | 日亜化学工業株式会社 | フッ化物蛍光体、発光装置及びフッ化物蛍光体の製造方法 |
CN113214825B (zh) * | 2021-04-26 | 2022-11-15 | 云南民族大学 | 一种固态照明led用多氟化物红光材料及其制备方法和应用 |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2522074A (en) | 1946-05-03 | 1950-09-12 | Univ Rochester | Method of rendering infrared radiation visible employing doubly activated alkaline earth sulfide phosphors |
US3576756A (en) | 1968-06-12 | 1971-04-27 | Mallinckrodt Chemical Works | Fluocomplexes of titanium, silicon, tin and germanium, activated by tetravalent manganese |
GB1360690A (en) | 1973-02-16 | 1974-07-17 | Gen Electric Co Ltd | Luminescent materials |
US4479886A (en) | 1983-08-08 | 1984-10-30 | Gte Products Corporation | Method of making cerium activated yttrium aluminate phosphor |
US6103296A (en) | 1998-04-22 | 2000-08-15 | Osram Sylvania Inc. | Method for improving the screen brightness of gadolinium oxysulfide x-ray phosphors |
CN1157462C (zh) | 2002-04-15 | 2004-07-14 | 清华大学 | 一种制备纳米级氟化物基质上转换荧光材料的方法 |
CN100577575C (zh) | 2004-09-10 | 2010-01-06 | 昭和电工株式会社 | 制造氟化锰的方法 |
US7270773B2 (en) | 2005-01-10 | 2007-09-18 | General Electric Company | Quantum-splitting fluoride-based phosphors, method of producing, and radiation sources incorporating same |
US7648649B2 (en) | 2005-02-02 | 2010-01-19 | Lumination Llc | Red line emitting phosphors for use in led applications |
US7497973B2 (en) | 2005-02-02 | 2009-03-03 | Lumination Llc | Red line emitting phosphor materials for use in LED applications |
US7358542B2 (en) | 2005-02-02 | 2008-04-15 | Lumination Llc | Red emitting phosphor materials for use in LED and LCD applications |
TWI389337B (zh) | 2005-05-12 | 2013-03-11 | Panasonic Corp | 發光裝置與使用其之顯示裝置及照明裝置,以及發光裝置之製造方法 |
KR20120109645A (ko) | 2005-06-14 | 2012-10-08 | 덴끼 가가꾸 고교 가부시키가이샤 | 형광체 함유 수지 조성물 및 시트, 그것들을 사용한 발광 소자 |
US20080116468A1 (en) * | 2006-11-22 | 2008-05-22 | Gelcore Llc | LED backlight using discrete RGB phosphors |
JP2008274254A (ja) | 2007-03-30 | 2008-11-13 | Mitsubishi Chemicals Corp | 蛍光体及びその製造方法、蛍光体含有組成物、発光装置、並びに画像表示装置及び照明装置 |
WO2009005035A1 (ja) | 2007-06-29 | 2009-01-08 | Mitsubishi Chemical Corporation | 蛍光体、蛍光体の製造方法、蛍光体含有組成物、並びに発光装置 |
TWI429731B (zh) | 2007-07-16 | 2014-03-11 | Lumination Llc | 由4價錳離子活化之發紅光錯合氟化磷光體 |
JP5332673B2 (ja) * | 2008-02-07 | 2013-11-06 | 三菱化学株式会社 | 半導体発光装置、バックライトおよびカラー画像表示装置 |
CN101939857B (zh) | 2008-02-07 | 2013-05-15 | 三菱化学株式会社 | 半导体发光装置、背光源、彩色图像显示装置以及这些中使用的荧光体 |
CN102790164B (zh) | 2008-03-03 | 2016-08-10 | Ge磷光体技术有限责任公司 | 发光装置 |
JP5545665B2 (ja) | 2008-03-25 | 2014-07-09 | 国立大学法人群馬大学 | 蛍光体の製造方法 |
JP5239043B2 (ja) * | 2008-07-18 | 2013-07-17 | シャープ株式会社 | 発光装置および発光装置の製造方法 |
JP2010093132A (ja) | 2008-10-09 | 2010-04-22 | Sharp Corp | 半導体発光装置およびそれを用いた画像表示装置、液晶表示装置 |
US8703016B2 (en) | 2008-10-22 | 2014-04-22 | General Electric Company | Phosphor materials and related devices |
CN102782086B (zh) | 2009-12-17 | 2016-02-17 | 皇家飞利浦电子股份有限公司 | 具有发光材料的发光二极管装置 |
TW201140890A (en) | 2009-12-17 | 2011-11-16 | Koninkl Philips Electronics Nv | Lighting device with light source and wavelength converting element |
US8593062B2 (en) | 2010-04-29 | 2013-11-26 | General Electric Company | Color stable phosphors for LED lamps and methods for preparing them |
US8057706B1 (en) * | 2010-07-27 | 2011-11-15 | General Electric Company | Moisture-resistant phosphor and associated method |
US8210698B2 (en) | 2010-07-28 | 2012-07-03 | Bridgelux, Inc. | Phosphor layer having enhanced thermal conduction and light sources utilizing the phosphor layer |
EP2629341B8 (en) | 2010-10-15 | 2020-04-08 | Mitsubishi Chemical Corporation | White light emitting device and lighting device |
US8252613B1 (en) * | 2011-03-23 | 2012-08-28 | General Electric Company | Color stable manganese-doped phosphors |
MY161542A (en) | 2011-04-08 | 2017-04-28 | Shinetsu Chemical Co | Preparation of complex fluoride and complex fluoride phosphor |
JP5418548B2 (ja) | 2011-07-06 | 2014-02-19 | 日亜化学工業株式会社 | フッ化物蛍光体及びそのフッ化物蛍光体を用いた発光装置 |
JP5375906B2 (ja) | 2011-09-13 | 2013-12-25 | 日亜化学工業株式会社 | フッ化物蛍光体及びそれを用いた発光装置 |
US9422471B2 (en) | 2011-12-16 | 2016-08-23 | Koninklijke Philips N.V. | Mn-activated hexafluorosilicates for LED applications |
RU2613963C2 (ru) | 2012-02-16 | 2017-03-22 | Конинклейке Филипс Н.В. | Имеющие покрытие фторсиликаты, излучающие красный узкополосный свет, для полупроводниковых светоизлучающих устройств |
US9765257B2 (en) * | 2012-03-12 | 2017-09-19 | Nitto Denko Corporation | Emissive compacts and method of making the same |
JP5840540B2 (ja) | 2012-03-15 | 2016-01-06 | 株式会社東芝 | 白色照明装置 |
US9343613B2 (en) | 2012-03-29 | 2016-05-17 | Koninklijke Philips N.V. | Phosphor in inorganic binder for LED applications |
WO2013158929A1 (en) | 2012-04-18 | 2013-10-24 | Nitto Denko Corporation | Phosphor ceramics and methods of making the same |
CN102827601B (zh) | 2012-09-17 | 2014-08-20 | 中国科学院福建物质结构研究所 | 氟化物荧光粉体材料及其半导体发光器件 |
CN102851026B (zh) | 2012-10-15 | 2014-07-02 | 温州大学 | 一种二基色白光led用红光材料及其制备方法 |
KR20150082426A (ko) | 2012-11-01 | 2015-07-15 | 코닌클리케 필립스 엔.브이. | 넓은 색 역을 가진 led 기반 장치 |
US9698314B2 (en) * | 2013-03-15 | 2017-07-04 | General Electric Company | Color stable red-emitting phosphors |
US20150069299A1 (en) | 2013-09-11 | 2015-03-12 | Nitto Denko Corporation | Phosphor Ceramics and Methods of Making the Same |
US9546318B2 (en) * | 2014-05-01 | 2017-01-17 | General Electric Company | Process for preparing red-emitting phosphors |
-
2014
- 2014-06-12 US US14/302,823 patent/US9385282B2/en active Active
-
2015
- 2015-06-09 MY MYPI2016704474A patent/MY174279A/en unknown
- 2015-06-09 KR KR1020177000734A patent/KR102492385B1/ko active IP Right Grant
- 2015-06-09 WO PCT/US2015/034938 patent/WO2015191607A2/en active Application Filing
- 2015-06-09 BR BR112016028806A patent/BR112016028806A8/pt not_active Application Discontinuation
- 2015-06-09 CA CA2952250A patent/CA2952250C/en active Active
- 2015-06-09 AU AU2015274758A patent/AU2015274758B2/en active Active
- 2015-06-09 EP EP15795004.9A patent/EP3155066B1/en active Active
- 2015-06-09 CN CN201580031379.5A patent/CN106459753B/zh active Active
- 2015-06-09 MX MX2016016390A patent/MX2016016390A/es unknown
- 2015-06-09 JP JP2016572305A patent/JP6694398B2/ja active Active
- 2015-06-11 TW TW104118927A patent/TWI618778B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20170019418A (ko) | 2017-02-21 |
EP3155066B1 (en) | 2020-05-06 |
MX2016016390A (es) | 2017-10-12 |
US20150364655A1 (en) | 2015-12-17 |
CN106459753B (zh) | 2020-03-27 |
CA2952250C (en) | 2023-03-07 |
BR112016028806A8 (pt) | 2021-05-04 |
AU2015274758A1 (en) | 2016-12-22 |
EP3155066A2 (en) | 2017-04-19 |
KR102492385B1 (ko) | 2023-01-26 |
TWI618778B (zh) | 2018-03-21 |
WO2015191607A2 (en) | 2015-12-17 |
CA2952250A1 (en) | 2015-12-17 |
JP2017520644A (ja) | 2017-07-27 |
US9385282B2 (en) | 2016-07-05 |
BR112016028806A2 (pt) | 2017-08-22 |
CN106459753A (zh) | 2017-02-22 |
AU2015274758B2 (en) | 2018-08-02 |
TW201612297A (en) | 2016-04-01 |
WO2015191607A3 (en) | 2016-03-10 |
MY174279A (en) | 2020-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7094715B2 (ja) | 色安定赤色発光蛍光体 | |
US11851595B2 (en) | Color stable red-emitting phosphors | |
JP6694398B2 (ja) | 色安定性赤色発光蛍光体 | |
JP6671302B2 (ja) | 色安定赤色発光蛍光体 | |
JP6671304B2 (ja) | 赤色発光蛍光体及びその関連装置 | |
JP6743002B2 (ja) | 色安定性赤色発光蛍光体 | |
US9376615B2 (en) | Color stable red-emitting phosphors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180601 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190723 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190820 |
|
RD12 | Notification of acceptance of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7432 Effective date: 20190910 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20190911 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191007 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191018 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200103 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200318 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200417 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6694398 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |