JP6671304B2 - 赤色発光蛍光体及びその関連装置 - Google Patents
赤色発光蛍光体及びその関連装置 Download PDFInfo
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- JP6671304B2 JP6671304B2 JP2016571167A JP2016571167A JP6671304B2 JP 6671304 B2 JP6671304 B2 JP 6671304B2 JP 2016571167 A JP2016571167 A JP 2016571167A JP 2016571167 A JP2016571167 A JP 2016571167A JP 6671304 B2 JP6671304 B2 JP 6671304B2
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
- C09K11/615—Halogenides
- C09K11/616—Halogenides with alkali or alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
- C09K11/617—Silicates
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00012—Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
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Description
Ax[MFy]:Mn4+ (I)
式中、
AはLi、Na、K、Rb、Cs又はそれらの組合せであり、
MはSi、Ge、Sn、Ti、Zr、Al、Ga、In、Sc、Hf、Y、La、Nb、Ta、Bi、Gd又はそれらの組合せであり、
xは[MFy]イオンの電荷の絶対値であり、
yは5、6又は7である。
蛍光体を溶液に接触させる温度は約20℃〜約50℃の範囲内である。蛍光体の処理に必要な時間は約1分〜約5時間、詳しくは約5分〜約1時間の範囲内である。HF水溶液におけるフッ化水素酸の濃度は、約20%w/w〜約70%w/w、詳しくは約40%w/w〜約70%w/wの範囲内である。溶液濃度が下がると、蛍光体の収量がそれだけ減少し得る。
(A)A2[MF5]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択され、MはAl、Ga、In及びその組合せから選択される)、
(B)A3[MF6]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択され、MはAl、Ga、In及びその組合せから選択される)、
(C)Zn2[MF7]:Mn4+(式中、MはAl、Ga、In及びその組合せから選択される)、
(D)A[In2F7]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択される)、
(E)A2[MF6]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択され、MはSi、Ge、Sn、Ti、Zr及びその組合せから選択される)、
(F)E[MF6]:Mn4+(式中、EはMg、Ca、Sr、Ba、Zn及びその組合せから選択され、MはSi、Ge、Sn、Ti、Zr及びその組合せから選択される)、
(G)Ba0.65Zr0.35F2.70:Mn4+、及び
(H)A3[ZrF7]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択される)
この方法における時間、温度及びフッ素含有酸化剤は上記で説明した通りである。
((Sr1-z(Ca,Ba,Mg,Zn)z)1-(x+w)(Li,Na,K,Rb)wCex)3(Al1-ySiy)O4+y+3(x-w)F1-y-3(x-w)(0<x≦0.10,0≦y≦0.5,0≦z≦0.5,0≦w≦x);
(Ca,Ce)3Sc2Si3O12(CaSiG);
(Sr,Ca,Ba)3Al1-xSixO4+xF1-x:Ce3+(SASOF));
(Ba,Sr,Ca)5(PO4)3(Cl,F,Br,OH):Eu2+,Mn2+;(Ba,Sr,Ca)BPO5:Eu2+,Mn2+;(Sr,Ca)10(PO4)6*νB2O3:Eu2+(0<ν≦1);Sr2Si3O8*2SrCl2:Eu2+;(Ca,Sr,Ba)3MgSi2O8:Eu2+,Mn2+;BaAl8O13:Eu2+;2SrO*0.84P2O5*0.16B2O3:Eu2+;(Ba,Sr,Ca)MgAl10O17:Eu2+,Mn2+;(Ba,Sr,Ca)Al2O4:Eu2+;(Y,Gd,Lu,Sc,La)BO3:Ce3+,Tb3+;ZnS:Cu+,Cl-;ZnS:Cu+,Al3+;ZnS:Ag+,Cl-;ZnS:Ag+,Al3+;(Ba,Sr,Ca)2Si1-ξO4-2ξ:Eu2+(0.2≦ξ≦0.2);(Ba,Sr,Ca)2(Mg,Zn)Si2O7:Eu2+;(Sr,Ca,Ba)(Al,Ga,In)2S4:Eu2+;(Y,Gd,Tb,La,Sm,Pr,Lu)3(Al,Ga)5-αO12-3/2α:Ce3+(0≦α≦0.5);(Ca,Sr)8(Mg,Zn)(SiO4)4Cl2:Eu2+,Mn2+;Na2Gd2B2O7:Ce3+,Tb3+;(Sr,Ca,Ba,Mg,Zn)2P2O7:Eu2+,Mn2+;(Gd,Y,Lu,La)2O3:Eu3+,Bi3+;(Gd,Y,Lu,La)2O2S:Eu3+,Bi3+;(Gd,Y,Lu,La)VO4:Eu3+,Bi3+;(Ca,Sr)S:Eu2+,Ce3+;SrY2S4:Eu2+;CaLa2S4:Ce3+;(Ba,Sr,Ca)MgP2O7:Eu2+,Mn2+;(Y,Lu)2WO6:Eu3+,Mo6+;(Ba,Sr,Ca)βSiγNμ:Eu2+(2β+4γ=3μ);(Ba,Sr,Ca)2Si5-xAlxN8-xOx:Eu2+(0≦x≦2);Ca3(SiO4)Cl2:Eu2+;(Lu,Sc,Y,Tb)2-u-vCevCa1+uLiwMg2-wPw(Si,Ge)3-wO12-u/2(−0.5≦u≦1,0<v≦0.1,かつ0≦w≦0.2);(Y,Lu,Gd)2-φCaφSi4N6+φC1-φ:Ce3+,(0≦φ≦0.5);Eu2+及び/又はCe3+でドープした(Lu,Ca,Li,Mg,Y),α−SiAlON;(Ca,Sr,Ba)SiO2N2:Eu2+,Ce3+;β−SiAlON:Eu2+,3.5MgO*0.5MgF2*GeO2:Mn4+;(Sr,Ca,Ba)AlSiN3:Eu2+;(Sr,Ca,Ba)3SiO5:Eu2+;Ca1-c-fCecEufAl1+cSi1-cN3(0≦c≦0.2,0≦f≦0.2);Ca1-h-rCehEurAl1-h(Mg,Zn)hSiN3(0≦h≦0.2,0≦r≦0.2);
Ca1-2s-tCes(Li,Na)sEutAlSiN3(0≦s≦0.2,0≦f≦0.2,s+t>0);及び
Ca1-σ-χ-φCeσ(Li,Na)χEuφAl1+σ-χSi1-σ+χN3(0≦σ≦0.2,0≦χ≦0.4,0≦φ≦0.2)。
D50粒径が46μmの粒子を有し、前駆体材料の全重量に対して0.76wt%のMnを含有する、15gのマンガンドープフルオロケイ酸カリウム(PFS:Mn)前駆体K2SiF6:Mn4+を、乾燥ミリング媒体が入った250ミリリットルのナルゲン(nalgene)ボトルに添加し、ボトル中に密封した。ボトルを15分間、ローラーミルにかけた。粉砕された前駆体をボトルから取り出した。同前駆体のD50粒径は16μmであった。
D50粒径が46μmの粒子を有し、前駆体材料の全重量に対して0.76wt%のMnを含有する、15gのマンガンドープフルオロケイ酸カリウム(PFS:Mn)前駆体K2SiF6:Mn4+を、乾燥ミリング媒体が入った250ミリリットルのナルゲンボトルに添加し、ボトル中に密封した。ボトルを15分間、ローラーミルにかけた。粉砕された前駆体をボトルから取り出した。同前駆体のD50粒径は24μm〜30μmの間であった。表2は、PFS:Mn前駆体のQEが粉砕後に低下したことを示している。
[実施態様1]
以下の化学式Iの蛍光体前駆体の粒子を粉砕する工程と、
粉砕後の粒子を高温でフッ素含有酸化剤と接触させる工程と
を含む、マンガンドープ蛍光体の合成方法
Ax[MFy]:Mn4+ (I)
式中、AはLi、Na、K、Rb、Cs又はそれらの組合せであり、
MはSi、Ge、Sn、Ti、Zr、Al、Ga、In、Sc、Hf、Y、La、Nb、Ta、Bi、Gd又はそれらの組合せであり、
xは[MFy]イオンの電荷の絶対値であり、
yは5、6又は7である。
[実施態様2]
MがSi、Ge、Sn、Ti、Zr又はそれらの組合せである、実施態様1に記載の合成方法。
[実施態様3]
化学式Iの蛍光体前駆体の粒子は粉砕後に約30μm未満のD50値を有する粒径分布を有する、実施態様1に記載の合成方法。
[実施態様4]
化学式Iの蛍光体前駆体の粒子は粉砕後に約10μm〜約25μmの範囲内のD50値を有する粒径分布を有する、実施態様1に記載の合成方法。
[実施態様5]
フッ素含有酸化剤がF2を含有する、実施態様1に記載の合成方法。
[実施態様6]
粒子を約500℃〜約600℃の範囲内の温度でフッ素含有酸化剤と接触させる、実施態様1に記載の合成方法。
[実施態様7]
粒子を4時間以上にわたってフッ素含有酸化剤と接触させる、実施態様1に記載の合成方法。
[実施態様8]
粉砕後の粒子をフッ素含有酸化剤と接触させた後、粉砕後の粒子を、水性フッ化水素酸に溶解した化学式IIの化合物の飽和溶液と接触させる工程をさらに含む、実施態様1に記載の合成方法。
[実施態様9]
AがNa、K、Rb、Cs又はそれらの組合せであり、MがSi、Ge、Ti又はそれらの組合せであり、Yが6である、実施態様1に記載の合成方法。
[実施態様10]
蛍光体前駆体がK2SiF6:Mn4+である、実施態様1に記載の合成方法。
[実施態様11]
実施態様1に記載の合成方法で調製したマンガンドープ錯フッ化物蛍光体。
[実施態様12]
半導体光源と、
実施態様1に記載の合成方法で調製したマンガンドープ蛍光体と
を含む照明装置。
[実施態様13]
半導体光源と、
実施態様1に記載の合成方法方法で調製したマンガンドープ蛍光体と
を含むバックライト装置。
[実施態様14]
以下の(A)〜(H):
(A)A2[MF5]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択され、MはAl、Ga、In及びその組合せから選択される)、
(B)A3[MF6]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択され、MはAl、Ga、In及びその組合せから選択される)、
(C)Zn2[MF7]:Mn4+(式中、MはAl、Ga、In及びその組合せから選択される)、
(D)A[In2F7]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択される)、
(E)A2[MF6]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択され、MはSi、Ge、Sn、Ti、Zr及びその組合せから選択される)、
(F)E[MF6]:Mn4+(式中、EはMg、Ca、Sr、Ba、Zn及びその組合せから選択され、MはSi、Ge、Sn、Ti、Zr及びその組合せから選択される)、
(G)Ba0.65Zr0.35F2.70:Mn4+、及び
(H)A3[ZrF7]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択される)
からなる群から選択される蛍光体前駆体の粒子を粉砕する工程と、
粒子を高温でフッ素含有酸化剤と接触させる工程と
を含む、マンガンドープ蛍光体の合成方法。
[実施態様15]
半導体光源と、
実施態様14に記載の合成方法方法で調製したマンガンドープ蛍光体と
を含む照明装置。
[実施態様16]
半導体光源と、
実施態様14に記載の合成方法方法で調製したマンガンドープ蛍光体と
を含むバックライト装置。
Claims (7)
- 以下の化学式Iの蛍光体前駆体の粒子を粉砕する工程と、
粉砕後の粒子を100℃以上の温度でフッ素含有酸化剤と接触させる工程と
を含む、マンガンドープ蛍光体の合成方法
Ax[MFy]:Mn4+ (I)
式中、AはLi、Na、K、Rb、Cs又はそれらの組合せであり、
MはSi、Ge、Sn、Ti、Zr、Al、Ga、In、Sc、Hf、Y、La、Nb、Ta、Bi、Gd又はそれらの組合せであり、
xは[MFy]イオンの電荷の絶対値であり、
yは5、6又は7である。 - 化学式Iの蛍光体前駆体の粒子が粉砕後に30μm未満のD50値を有する粒径分布を有する、請求項1に記載の合成方法。
- 化学式Iの蛍光体前駆体の粒子が粉砕後に10μm〜25μmの範囲内のD50値を有する粒径分布を有する、請求項1に記載の合成方法。
- フッ素含有酸化剤はF2を含有する、請求項1に記載の合成方法。
- 粉砕後の粒子をフッ素含有酸化剤と接触させた後、粉砕後の粒子を、水性フッ化水素酸に溶解した化学式IIの化合物の飽和溶液と接触させる工程をさらに含む、請求項1に記載の合成方法。
Ax[MFy] (II) - 蛍光体前駆体がK2SiF6:Mn4+である、請求項1に記載の合成方法。
- 以下の(A)〜(H):
(A)A2[MF5]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択され、MはAl、Ga、In及びその組合せから選択される)、
(B)A3[MF6]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択され、MはAl、Ga、In及びその組合せから選択される)、
(C)Zn2[MF7]:Mn4+(式中、MはAl、Ga、In及びその組合せから選択される)、
(D)A[In2F7]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択される)、
(E)A2[MF6]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択され、MはSi、Ge、Sn、Ti、Zr及びその組合せから選択される)、
(F)E[MF6]:Mn4+(式中、EはMg、Ca、Sr、Ba、Zn及びその組合せから選択され、MはSi、Ge、Sn、Ti、Zr及びその組合せから選択される)、
(G)Ba0.65Zr0.35F2.70:Mn4+、及び
(H)A3[ZrF7]:Mn4+(式中、AはLi、Na、K、Rb、Cs及びその組合せから選択される)
からなる群から選択される蛍光体前駆体の粒子を粉砕する工程と、
粒子を100℃以上の温度でフッ素含有酸化剤と接触させる工程と
を含む、マンガンドープ蛍光体の合成方法。
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EP3155065B1 (en) | 2018-10-10 |
US20150361335A1 (en) | 2015-12-17 |
EP3155065A1 (en) | 2017-04-19 |
PH12016502269A1 (en) | 2017-02-06 |
CN106459754B (zh) | 2020-01-07 |
CN106459754A (zh) | 2017-02-22 |
US9567516B2 (en) | 2017-02-14 |
KR20170016966A (ko) | 2017-02-14 |
CA2951410C (en) | 2023-01-03 |
WO2015191943A1 (en) | 2015-12-17 |
MY177361A (en) | 2020-09-14 |
TW201610093A (zh) | 2016-03-16 |
CA2951410A1 (en) | 2015-12-17 |
AU2015274474B2 (en) | 2018-08-02 |
JP2017521511A (ja) | 2017-08-03 |
KR102496972B1 (ko) | 2023-02-07 |
MX2016016392A (es) | 2017-05-01 |
TWI638030B (zh) | 2018-10-11 |
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