JP6704001B2 - Mnドープされたフッ化物燐光体を製造するための方法 - Google Patents
Mnドープされたフッ化物燐光体を製造するための方法 Download PDFInfo
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- JP6704001B2 JP6704001B2 JP2017558370A JP2017558370A JP6704001B2 JP 6704001 B2 JP6704001 B2 JP 6704001B2 JP 2017558370 A JP2017558370 A JP 2017558370A JP 2017558370 A JP2017558370 A JP 2017558370A JP 6704001 B2 JP6704001 B2 JP 6704001B2
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Classifications
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- C09K11/7705—Halogenides with alkali or alkaline earth metals
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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Description
AaBbCcDdXx:Mn4+ (I)
AaiBbiCciDdXxYd:Mn4+ (II)
A1 3G2-m-nMnmMgnLi3F12Op (III)
AZF4:Mn4+ (IV)
(式中、
Aは、Li、Na、K、Rb、Cs、またはこれらの組合せであり;
Bは、Be、Mg、Ca、Sr、Ba、またはこれらの組合せであり;
Cは、Sc、Y、B、Al、Ga、In、TI、またはこれらの組合せであり;
Dは、Ti、Zr、Hf、Rf、Si、Ge、Sn、Pb、またはこれらの組合せであり;
Xは、F、またはFと、Br、Cl、およびIのうちの少なくとも1つとの組合せであり;
Yは、O、またはOと、SおよびSeのうちの少なくとも1つとの組合せであり;
A1は、NaもしくはK、またはこれらの組合せであり;
Gは、Al、B、Sc、Fe、Cr、Ti、In、またはこれらの組合せであり;
Zは、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Sc、Y、In、またはこれらの組合せであり;
0≦a<2;
0≦b<1;
0≦c<1;
0≦d≦1;
0.8≦ai≦1.2;
0.8≦bi≦1.2;
0≦ciii≦1.2;
5.0≦x≦7;
0.8≦c+d≦1.2;
a+2b+3c+4d=x;
0.8≦ci+d≦1;
5.0≦x+d≦7.0;
ai+2bi+3ci+4d=x+2d;
0.02≦m≦0.2;
0≦n≦0.4;
0≦p<1
である)
の前駆体を高温でガス状形態のフッ素含有酸化剤と接触させて、色安定なMn4+ドープ燐光体を形成する。
AaBbCcDdXx:Mn4+ (I)
(式中、
Aは、Li、Na、K、Rb、Cs、またはこれらの組合せであり;
Bは、Be、Mg、Ca、Sr、Ba、またはこれらの組合せであり;
Cは、Sc、Y、B、Al、Ga、In、TI、またはこれらの組合せであり;
Dは、Ti、Zr、Hf、Rf、Si、Ge、Sn、Pb、またはこれらの組合せであり;
Xは、F、またはFと、Br、Cl、およびIのうちの少なくとも1つとの組合せであり;
0≦a<2;
0≦b<1;
0≦c<1;
0≦d≦1;
0.8≦c+d≦1.2;
5.0≦x≦7;
a+2b+3c+4d=x
である)
の前駆体は、三菱化学株式会社に譲渡された国際公開第2014/104143号に記載されている。
AaiBbiCciDdXxYd:Mn4+ (II)
(式中、
Yは、O、またはOと、SおよびSeのうちの少なくとも1つとの組合せであり;
0.8≦ai≦1.2;
0.8≦bi≦1.2;
0≦ci≦1.2;
0.8≦ci+di≦1;
5.0≦x+d≦7.0;
ai+2bi+3ci+4d=x+2d;
Yは、O、またはOと、SおよびSeのうちの少なくとも1つとの組合せ
である)
の前駆体、は、国際公開第2014/104143号に記載されている。
A1 3G2-m-nMnmMgnLi3F12Op (III)
(式中、
A1は、NaもしくはK、またはこれらの組合せであり;
Gは、Al、B、Sc、Fe、Cr、Ti、In、またはこれらの組合せであり;
0.02≦m≦0.2;
0≦n≦0.4;
0≦p<1
である)
の前駆体、は、Koninklijke Philips Electronics N.V.に譲渡された米国特許第2012/0305972号に記載されている。
AZF4:Mn4+ (IV)
(式中、
Zは、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Sc、Y、In、またはこれらの組合せである)
の前駆体は、Fujian Institute of Structure of Matterに譲渡された中国特許第102827601号に記載されている。
((Sr1-z(Ca,Ba,Mg,Zn)z)1-(x+w)(Li,Na,K,Rb)wCex)3(Al1-ySiy)O4+y+3(x-w)F1-y-3(x-w)、0<x≦0.10、0≦y≦0.5、0≦z≦0.5、0≦w≦x;
(Ca,Ce)3Sc2Si3O12(CaSiG);
(Sr,Ca,Ba)3Al1-xSixO4+xF1-x:Ce3+(SASOF);
(Ba,Sr,Ca)5(PO4)3(Cl,F,Br,OH):Eu2+,Mn2+;(Ba,Sr,Ca)BPO5:Eu2+,Mn2+;
(Sr,Ca)10(PO4)6*νB2O3:Eu2+(式中、0<ν≦1);Sr2Si3O8*2SrCl2:Eu2+;
(Ca,Sr,Ba)3MgSi2O8:Eu2+,Mn2+;BaAl8O13:Eu2+;2SrO*0.84P2O5*0.16B2O3:Eu2+;
(Ba,Sr,Ca)MgAl10O17:Eu2+,Mn2+;(Ba,Sr,Ca)Al2O4:Eu2+;(Y,Gd,Lu,Sc,La)BO3:Ce3+,Tb3+;
ZnS:Cu+,Cl-,ZnS:Cu+,Al3+;ZnS:Ag+,Cl-;ZnS:Ag+,Al3+;(Ba,Sr,Ca)2Si1-ξO4-2ξ:Eu2+(式中、0≦ξ≦0.2);(Ba,Sr,Ca)2(Mg(Zn))Si2O7:Eu2+;(Sr,Ca,Ba)(Al,Ga,In)2S4:Eu2+;
(Y,Gd,Tb,La,Sm,Pr,Lu)3(Al,Ga)5-αO12-3/2α:Ce3+(式中、0≦α≦0.5);
(Ca,Sr)8(Mg(Zn))(SiO4)4Cl2:Eu2+,Mn2+;Na2Gd2B2O7:Ce3+Tb3+;(Sr,Ca,Ba,Mg,Zn)2P2O7:Eu2+,Mn2+;
(Gd,Y,Lu,La)2O3:Eu3+,Bi3+;(Gd,Y,Lu,La)2O2S:Eu3+,Bi3+;(Gd,Y,Lu,La)VO4:Eu3+,Bi3+;
(CaSr)S:Eu2+,Ce3+;SrY2S4:Eu2+;CaLa2S4:Ce3+;(Ba,Sr,Ca)MgP2O7:Eu2+,Mn2+;
(Y,Lu)2WO6:Eu3+,Mo6+;(Ba,Sr,Ca)βSiγNμ:Eu2+(式中、2β+4γ=3μ);Ca3(SiO4)Cl2:Eu2+;
(Lu,Sc,Y,Tb)2-u-vCevCa1+uLiwMg2-wPw(Si,Ge)3-wO12-u/2(式中、−0.5≦u≦1、0<v≦0.1、および0≦w≦0.2);
(Y,Lu,Gd)2-ΦCaΦSi4N6+ΦC1-Φ:Ce3+(式中、0≦Φ≦0.5);(Lu,Ca,Li,Mg,Y),Eu2+および/またはCe3+がドープされたα−SiAlON;(Ca,Sr,Ba)SiO2N2:Eu2+;Ce3+;β−SiAlON:Eu2+,3.5MgO*0.5MgF2*GeO2:Mn4+;Ca1-c-fCecEufAl1+cSi1-cN3(式中、0≦c≦0.2、0≦f≦0.2);Ca1-h-rCehEurAl1-h(Mg,Zn)hSiN3(式中、0≦h≦0.2、0≦r≦0.2);Ca1-2s-tCes(Li(Na))sEutAlSiN3(式中、0≦s≦0.2、0≦f≦0.2、s+t>0);(Sr,Ca)AlSiN3:Eu2+およびCa1-α-χ-φCeσ(Li,Na)χEuφAl1+σ-χSi1-σ+χN3(式中、0≦σ≦0.2、0≦χ≦0.4、0≦φ≦0.2)が含まれるが、これらに限定されない。
実施例
12 LEDチップ
14 リード
16 リードフレーム
18 シェル
20 封止剤
22 燐光体
24 白色光
112 LEDチップ
120 封止剤材料
122 燐光体
124 白色光
126 矢印
212 LEDチップ
218 エンベロープ
222 燐光体
224 白色光
226 放射
412 LEDチップ
416 リード
420 封止剤材料
430 反射カップ
432 導線
550 発光ダイオード
552 発光窓
554 光ガイド部材
Claims (12)
- 色安定なMn4+ドープされた燐光体(22、122、222)を合成するための方法であって、式I、II、III、またはIV
AaBbCcDdXx:Mn4+ (I)
AaiBbiCciDdXxYd:Mn4+ (II)
A1 3G2−m−nMnmMgnLi3F12−pOp (III)
AZF4:Mn4+ (IV)
(式中、
Aは、Li、Na、K、Rb、Cs、またはこれらの組合せであり;
Bは、Be、Mg、Ca、Sr、Ba、またはこれらの組合せであり;
Cは、Sc、Y、B、Al、Ga、In、TI、またはこれらの組合せであり;
Dは、Ti、Zr、Hf、Rf、Si、Ge、Sn、Pb、またはこれらの組合せであり;
Xは、F、またはFと、Br、Cl、およびIのうちの少なくとも1つとの組合せであり;
Yは、O、またはOと、SおよびSeのうちの少なくとも1つとの組合せであり;
A1は、NaもしくはK、またはこれらの組合せであり;
Gは、Al、B、Sc、Fe、Cr、Ti、In、またはこれらの組合せであり;
Zは、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Sc、Y、In、またはこれらの組合せであり;
0≦a<2;
0<b<1;
0<c<1;
0≦d≦1;
0.8≦ai≦1.2;
0.8≦bi≦1.2;
0≦ci≦1.2;
5.0≦x≦7;
0.8≦c+d≦1.2;
a+2b+3c+4d=x;
0.8≦ci+d≦1;
5.0≦x+d≦7.0;
ai+2bi+3ci+4d=x+2d;
0.02≦m≦0.2;
0≦n≦0.4;
0≦p<1
である)
の前駆体を高温でガス状形態のフッ素含有酸化剤と接触させて、前記色安定なMn4+ドープされた燐光体(22、122、222)を形成するステップを含む、方法。 - 前記前駆体が式Iである、請求項1記載の方法。
- 前記前駆体が式IIである、請求項1記載の方法。
- 前記前駆体が式IIIである、請求項1記載の方法。
- 前記前駆体が式IVである、請求項1記載の方法。
- XがFである、請求項1記載の方法。
- YがOである、請求項1記載の方法。
- BがCa、Sr、Ba、またはこれらの組合せである、請求項1記載の方法。
- CがAl、Ga、またはこれらの組合せである、請求項1記載の方法。
- DがSi、Ge、Ti、またはこれらの組合せである、請求項1記載の方法。
- 前記フッ素含有酸化剤がF2である、請求項1記載の方法。
- 前記高温でガス状形態のフッ素含有酸化剤の温度が200℃〜700℃の範囲にある、請求項1記載の方法。
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US10754081B2 (en) | 2016-03-07 | 2020-08-25 | Current Lighting Solutions, Llc | Devices containing a remote phosphor package with red line emitting phosphors and green emitting quantum dots |
US10193030B2 (en) | 2016-08-08 | 2019-01-29 | General Electric Company | Composite materials having red emitting phosphors |
CA3063060A1 (en) * | 2017-04-12 | 2018-10-18 | Current Lighting Solutions, Llc | Devices containing a remote phosphor package with red line emitting phosphors and green emitting quantum dots |
DE102017123265B4 (de) * | 2017-10-06 | 2023-05-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtstoff und Konversions-LED |
DE102017123269A1 (de) * | 2017-10-06 | 2019-04-11 | Osram Opto Semiconductors Gmbh | Leuchtstoff und Konversions-LED |
CN107706403B (zh) * | 2017-11-20 | 2020-09-25 | 中国科学院过程工程研究所 | 一种复合碳材料及采用其制备的改性电极材料和锂离子电池 |
CN109280551B (zh) * | 2018-10-23 | 2019-07-12 | 旭宇光电(深圳)股份有限公司 | 高光效的氟氧化物荧光粉及其制备方法和半导体发光装置 |
CN109294566A (zh) * | 2018-10-29 | 2019-02-01 | 温州大学 | 一种四价锰离子激活的氟铟酸钡红色荧光粉及其制备方法 |
CN110684527B (zh) * | 2019-07-24 | 2022-07-12 | 云南民族大学 | 一种蓝光激发的掺Mn4+的六氟铁酸盐红色发光材料及其合成方法 |
CN112816467B (zh) * | 2021-02-08 | 2023-08-29 | 杭州可靠护理用品股份有限公司 | 一种用于尿液检测的显色剂及其在纸尿裤上的应用 |
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US6621211B1 (en) | 2000-05-15 | 2003-09-16 | General Electric Company | White light emitting phosphor blends for LED devices |
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US8703016B2 (en) | 2008-10-22 | 2014-04-22 | General Electric Company | Phosphor materials and related devices |
US9133390B2 (en) * | 2009-12-17 | 2015-09-15 | Koninklijke Philips N.V. | Light emitting diode device with luminescent material |
US8057706B1 (en) * | 2010-07-27 | 2011-11-15 | General Electric Company | Moisture-resistant phosphor and associated method |
CN102986044B (zh) | 2010-10-15 | 2015-05-06 | 三菱化学株式会社 | 白色发光装置及照明器具 |
US8252613B1 (en) * | 2011-03-23 | 2012-08-28 | General Electric Company | Color stable manganese-doped phosphors |
WO2013158929A1 (en) | 2012-04-18 | 2013-10-24 | Nitto Denko Corporation | Phosphor ceramics and methods of making the same |
CN102827601B (zh) | 2012-09-17 | 2014-08-20 | 中国科学院福建物质结构研究所 | 氟化物荧光粉体材料及其半导体发光器件 |
WO2014104143A1 (ja) * | 2012-12-26 | 2014-07-03 | 三菱化学株式会社 | 蛍光体、その蛍光体を用いた蛍光体含有組成物及び発光装置、並びに、その発光装置を用いた画像表示装置及び照明装置 |
US9698314B2 (en) * | 2013-03-15 | 2017-07-04 | General Electric Company | Color stable red-emitting phosphors |
US9868898B2 (en) * | 2013-03-15 | 2018-01-16 | General Electric Company | Processes for preparing color stable red-emitting phosphors |
US9580648B2 (en) * | 2013-03-15 | 2017-02-28 | General Electric Company | Color stable red-emitting phosphors |
US9399732B2 (en) * | 2013-08-22 | 2016-07-26 | General Electric Company | Processes for preparing color stable manganese-doped phosphors |
US20150123153A1 (en) * | 2013-11-06 | 2015-05-07 | General Electric Company | Led package with red-emitting phosphors |
US9512356B2 (en) * | 2014-05-01 | 2016-12-06 | General Electric Company | Process for preparing red-emitting phosphors |
US9385282B2 (en) * | 2014-06-12 | 2016-07-05 | General Electric Company | Color stable red-emitting phosphors |
US9376615B2 (en) * | 2014-06-12 | 2016-06-28 | General Electric Company | Color stable red-emitting phosphors |
US9567516B2 (en) * | 2014-06-12 | 2017-02-14 | General Electric Company | Red-emitting phosphors and associated devices |
US10174248B2 (en) | 2015-05-18 | 2019-01-08 | General Electric Company | Process for improved halide materials |
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US20180155618A1 (en) | 2018-06-07 |
TW201708502A (zh) | 2017-03-01 |
KR102167629B1 (ko) | 2020-10-20 |
CN107592880A (zh) | 2018-01-16 |
TWI726878B (zh) | 2021-05-11 |
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