JP2016532629A5 - - Google Patents
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- Publication number
- JP2016532629A5 JP2016532629A5 JP2016540413A JP2016540413A JP2016532629A5 JP 2016532629 A5 JP2016532629 A5 JP 2016532629A5 JP 2016540413 A JP2016540413 A JP 2016540413A JP 2016540413 A JP2016540413 A JP 2016540413A JP 2016532629 A5 JP2016532629 A5 JP 2016532629A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- crucible
- substantially solid
- mixture
- solid silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 claims 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 16
- 229910010271 silicon carbide Inorganic materials 0.000 claims 16
- 239000002243 precursor Substances 0.000 claims 13
- 239000007787 solid Substances 0.000 claims 11
- 238000000034 method Methods 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 6
- 239000002245 particle Substances 0.000 claims 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 5
- 229910052799 carbon Inorganic materials 0.000 claims 5
- 239000011856 silicon-based particle Substances 0.000 claims 4
- 238000000859 sublimation Methods 0.000 claims 4
- 230000008022 sublimation Effects 0.000 claims 4
- 239000011810 insulating material Substances 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000008241 heterogeneous mixture Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361874606P | 2013-09-06 | 2013-09-06 | |
| US61/874,606 | 2013-09-06 | ||
| PCT/US2014/054262 WO2015035145A1 (en) | 2013-09-06 | 2014-09-05 | Method and apparatus for producing bulk silicon carbide from a silicon carbide precursor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019149415A Division JP6887174B2 (ja) | 2013-09-06 | 2019-08-16 | 炭化ケイ素前駆体からのバルクの炭化ケイ素の製造方法及び装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016532629A JP2016532629A (ja) | 2016-10-20 |
| JP2016532629A5 true JP2016532629A5 (https=) | 2017-10-19 |
Family
ID=52624261
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016540413A Pending JP2016532629A (ja) | 2013-09-06 | 2014-09-05 | 炭化ケイ素前駆体からのバルクの炭化ケイ素の製造方法及び装置 |
| JP2019149415A Active JP6887174B2 (ja) | 2013-09-06 | 2019-08-16 | 炭化ケイ素前駆体からのバルクの炭化ケイ素の製造方法及び装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019149415A Active JP6887174B2 (ja) | 2013-09-06 | 2019-08-16 | 炭化ケイ素前駆体からのバルクの炭化ケイ素の製造方法及び装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10633762B2 (https=) |
| JP (2) | JP2016532629A (https=) |
| KR (1) | KR102245506B1 (https=) |
| CN (1) | CN105518190B (https=) |
| DE (1) | DE112014004056T5 (https=) |
| TW (1) | TWI647349B (https=) |
| WO (1) | WO2015035145A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10633762B2 (en) * | 2013-09-06 | 2020-04-28 | GTAT Corporation. | Method for producing bulk silicon carbide by sublimation of a silicon carbide precursor prepared from silicon and carbon particles or particulate silicon carbide |
| JP7393900B2 (ja) * | 2019-09-24 | 2023-12-07 | 一般財団法人電力中央研究所 | 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法 |
| CN110872728B (zh) * | 2019-11-28 | 2021-05-28 | 山东大学 | 一种简单、高效降低SiC单晶中碳包裹物的方法 |
| AT523729B1 (de) * | 2020-09-28 | 2021-11-15 | Ebner Ind Ofenbau | Vorrichtung zum Züchten von Kristallen mit einer thermischen Umhüllungseinheit |
| AT524248B1 (de) | 2020-09-28 | 2023-07-15 | Ebner Ind Ofenbau | Verfahren zur Züchtung von Kristallen |
| AT524251B1 (de) | 2020-09-28 | 2023-04-15 | Ebner Ind Ofenbau | Vorrichtung zum Züchten von Einkristallen |
| AT524237B1 (de) | 2020-09-28 | 2022-04-15 | Ebner Ind Ofenbau | Vorrichtung zur Siliziumcarbideinkristall-Herstellung |
| EP4001475A1 (en) | 2020-11-19 | 2022-05-25 | Zadient Technologies SAS | Improved furnace apparatus for crystal production |
| EP4279641A1 (en) | 2022-05-18 | 2023-11-22 | Zadient Technologies SAS | Improved furnace apparatus for crystal production with seed holder repositioning unit |
| CN116716655B (zh) * | 2023-06-14 | 2024-04-02 | 通威微电子有限公司 | 生长高质量碳化硅晶体的装置、方法及碳化硅晶体 |
| CN117923495A (zh) * | 2023-12-22 | 2024-04-26 | 中山中晶半导体材料有限公司 | 一种高纯碳化硅原料的合成方法 |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4886652A (en) * | 1986-10-27 | 1989-12-12 | Osaka Gas Co., Ltd. | Production of metal carbides |
| JPS63190778A (ja) * | 1986-10-27 | 1988-08-08 | 大阪瓦斯株式会社 | 金属カーバイドの製造 |
| US4866005A (en) * | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
| JPH0465400A (ja) * | 1990-06-29 | 1992-03-02 | Sanyo Electric Co Ltd | ＳｉＣ単結晶の成長方法 |
| JPH06316499A (ja) * | 1993-04-30 | 1994-11-15 | Sharp Corp | 炭化珪素単結晶の製造方法 |
| US5683507A (en) * | 1995-09-05 | 1997-11-04 | Northrop Grumman Corporation | Apparatus for growing large silicon carbide single crystals |
| JPH08325099A (ja) * | 1996-06-24 | 1996-12-10 | Sanyo Electric Co Ltd | ＳｉＣ単結晶の成長方法 |
| JP4052678B2 (ja) * | 1997-01-31 | 2008-02-27 | ノースロップ グラマン コーポレーション | 大形炭化珪素単結晶成長装置 |
| JP3898278B2 (ja) * | 1997-04-21 | 2007-03-28 | 昭和電工株式会社 | 炭化ケイ素単結晶の製造方法及びその製造装置 |
| DE59901313D1 (de) * | 1998-07-13 | 2002-05-29 | Siemens Ag | VERFAHREN ZUR ZÜCHTUNG VON SiC-EINKRISTALLEN |
| JP4503736B2 (ja) * | 1999-08-31 | 2010-07-14 | 独立行政法人産業技術総合研究所 | 単結晶の製造方法およびその装置 |
| AU2001245270A1 (en) * | 2000-02-15 | 2001-09-03 | The Fox Group, Inc. | Method and apparatus for growing low defect density silicon carbide and resulting material |
| AU2001288020A1 (en) * | 2000-09-06 | 2002-03-22 | Silbid Ltd. | Method of producing silicon carbide and various forms thereof |
| US20020071803A1 (en) * | 2000-09-06 | 2002-06-13 | Silbid Ltd. | Method of producing silicon carbide power |
| JP4275308B2 (ja) * | 2000-12-28 | 2009-06-10 | 株式会社デンソー | 炭化珪素単結晶の製造方法およびその製造装置 |
| US7601441B2 (en) | 2002-06-24 | 2009-10-13 | Cree, Inc. | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| JP4427470B2 (ja) | 2004-03-29 | 2010-03-10 | 新日本製鐵株式会社 | 炭化珪素単結晶の製造方法 |
| US7323052B2 (en) * | 2005-03-24 | 2008-01-29 | Cree, Inc. | Apparatus and method for the production of bulk silicon carbide single crystals |
| US8361227B2 (en) * | 2006-09-26 | 2013-01-29 | Ii-Vi Incorporated | Silicon carbide single crystals with low boron content |
| WO2008014434A2 (en) | 2006-07-28 | 2008-01-31 | Caracal, Inc. | Crystal growth method and reactor design |
| JP2008072817A (ja) | 2006-09-13 | 2008-03-27 | Yaskawa Electric Corp | 真空用モータおよびその製造方法 |
| EP2245217A1 (en) | 2007-12-12 | 2010-11-03 | Dow Corning Corporation | Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes |
| JP2009184897A (ja) * | 2008-02-08 | 2009-08-20 | Bridgestone Corp | 炭化ケイ素単結晶の製造方法 |
| JP4831128B2 (ja) * | 2008-05-26 | 2011-12-07 | パナソニック株式会社 | 結晶成長用坩堝 |
| JP5779171B2 (ja) | 2009-03-26 | 2015-09-16 | トゥー‐シックス・インコーポレイテッド | ＳｉＣ単結晶の昇華成長方法及び装置 |
| CN101985773B (zh) * | 2009-11-05 | 2013-12-18 | 新疆天科合达蓝光半导体有限公司 | 一种籽晶处理方法和生长碳化硅单晶的方法 |
| JP2011184208A (ja) * | 2010-03-04 | 2011-09-22 | Bridgestone Corp | 炭化ケイ素単結晶の製造装置及び炭化ケイ素単結晶の製造方法 |
| JP2011195360A (ja) * | 2010-03-18 | 2011-10-06 | Sumitomo Electric Ind Ltd | 坩堝、結晶製造装置、および支持台 |
| CN101812723B (zh) * | 2010-04-20 | 2012-04-11 | 上海硅酸盐研究所中试基地 | 基于物理气相传输技术生长碳化硅体单晶方法及其装置 |
| JP2011251884A (ja) * | 2010-06-03 | 2011-12-15 | Bridgestone Corp | 炭化ケイ素単結晶の製造装置 |
| JP5706671B2 (ja) * | 2010-11-15 | 2015-04-22 | 独立行政法人産業技術総合研究所 | 昇華再結晶法による炭化ケイ素単結晶製造用炭化ケイ素粉体及びその製造方法 |
| JP5212455B2 (ja) * | 2010-12-16 | 2013-06-19 | 株式会社デンソー | 炭化珪素単結晶の製造装置 |
| JP2012171812A (ja) * | 2011-02-17 | 2012-09-10 | Bridgestone Corp | ４ｈ型炭化珪素単結晶の製造方法 |
| JP2012240869A (ja) * | 2011-05-18 | 2012-12-10 | Sumitomo Electric Ind Ltd | 炭化珪素粉末および炭化珪素粉末の製造方法 |
| JP2013103848A (ja) * | 2011-11-11 | 2013-05-30 | Mitsubishi Electric Corp | ＳｉＣ単結晶の製造方法 |
| KR101976594B1 (ko) * | 2011-12-26 | 2019-05-09 | 엘지이노텍 주식회사 | 탄화규소 분말, 이의 제조 방법 및 단결정 성장 방법 |
| CN202440568U (zh) * | 2012-01-17 | 2012-09-19 | 山东天岳先进材料科技有限公司 | 一种用于生长碳化硅晶棒的石墨坩埚 |
| CN110670124B (zh) * | 2013-09-06 | 2021-07-30 | Gtat公司 | 生产大块硅碳化物的方法 |
| US10633762B2 (en) * | 2013-09-06 | 2020-04-28 | GTAT Corporation. | Method for producing bulk silicon carbide by sublimation of a silicon carbide precursor prepared from silicon and carbon particles or particulate silicon carbide |
| CN105518189B (zh) * | 2013-09-06 | 2019-10-15 | Gtat公司 | 使用硅碳化物晶种来生产大块硅碳化物的方法和器具 |
| DE112014004073B4 (de) * | 2013-09-06 | 2026-04-30 | Gtat Corporation | Sublimationsofen |
-
2014
- 2014-09-05 US US14/478,512 patent/US10633762B2/en active Active
- 2014-09-05 CN CN201480049194.2A patent/CN105518190B/zh active Active
- 2014-09-05 JP JP2016540413A patent/JP2016532629A/ja active Pending
- 2014-09-05 KR KR1020167008940A patent/KR102245506B1/ko active Active
- 2014-09-05 DE DE112014004056.8T patent/DE112014004056T5/de active Pending
- 2014-09-05 WO PCT/US2014/054262 patent/WO2015035145A1/en not_active Ceased
- 2014-09-09 TW TW103130959A patent/TWI647349B/zh active
-
2019
- 2019-08-16 JP JP2019149415A patent/JP6887174B2/ja active Active
-
2020
- 2020-02-27 US US16/803,037 patent/US11434582B2/en active Active
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