JP2016530706A5 - - Google Patents

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Publication number
JP2016530706A5
JP2016530706A5 JP2016523737A JP2016523737A JP2016530706A5 JP 2016530706 A5 JP2016530706 A5 JP 2016530706A5 JP 2016523737 A JP2016523737 A JP 2016523737A JP 2016523737 A JP2016523737 A JP 2016523737A JP 2016530706 A5 JP2016530706 A5 JP 2016530706A5
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substrate
inches
image
lip
vertical
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JP2016523737A
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Japanese (ja)
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JP2016530706A (ja
JP6853038B2 (ja
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Priority claimed from PCT/US2014/036213 external-priority patent/WO2014209492A1/en
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Publication of JP2016530706A5 publication Critical patent/JP2016530706A5/ja
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JP2016523737A 2013-06-26 2014-04-30 Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 Active JP6853038B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361839823P 2013-06-26 2013-06-26
US61/839,823 2013-06-26
PCT/US2014/036213 WO2014209492A1 (en) 2013-06-26 2014-04-30 Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020213400A Division JP2021068909A (ja) 2013-06-26 2020-12-23 Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計

Publications (3)

Publication Number Publication Date
JP2016530706A JP2016530706A (ja) 2016-09-29
JP2016530706A5 true JP2016530706A5 (enExample) 2017-06-08
JP6853038B2 JP6853038B2 (ja) 2021-03-31

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ID=52142541

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016523737A Active JP6853038B2 (ja) 2013-06-26 2014-04-30 Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計
JP2020213400A Pending JP2021068909A (ja) 2013-06-26 2020-12-23 Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計

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JP2020213400A Pending JP2021068909A (ja) 2013-06-26 2020-12-23 Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計

Country Status (6)

Country Link
US (1) US20160099162A1 (enExample)
JP (2) JP6853038B2 (enExample)
KR (1) KR102253990B1 (enExample)
CN (2) CN105074869A (enExample)
TW (1) TWM492915U (enExample)
WO (1) WO2014209492A1 (enExample)

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US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US9633862B2 (en) * 2015-08-31 2017-04-25 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method
JP2020516770A (ja) * 2017-04-07 2020-06-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板端部上のプラズマ密度制御
EP3852137A1 (en) * 2017-07-24 2021-07-21 LAM Research Corporation Moveable edge ring design
EP3665531B1 (en) * 2017-09-13 2023-12-13 LG Chem, Ltd. Preparation method of patterned substrate
CN118380375A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
CN108269753B (zh) * 2018-01-10 2023-12-05 池州海琳服装有限公司 一种硅片单面清洗机
CN108063110B (zh) * 2018-01-10 2023-11-24 池州海琳服装有限公司 一种硅片浮动支撑机构
TWI848010B (zh) * 2018-10-18 2024-07-11 美商蘭姆研究公司 用於斜面蝕刻器的下電漿排除區域環
JP7541005B2 (ja) 2018-12-03 2024-08-27 アプライド マテリアルズ インコーポレイテッド チャックとアーク放電に関する性能が改良された静電チャック設計
WO2020257095A1 (en) * 2019-06-18 2020-12-24 Lam Research Corporation Reduced diameter carrier ring hardware for substrate processing systems
KR20220038172A (ko) * 2019-08-05 2022-03-25 램 리써치 코포레이션 기판 프로세싱 시스템들을 위한 에지 링 시스템들
TWM602283U (zh) * 2019-08-05 2020-10-01 美商蘭姆研究公司 基板處理系統用之具有升降銷溝槽的邊緣環
JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
US20220282371A1 (en) * 2021-03-03 2022-09-08 Applied Materials, Inc. Electrostatic chuck with metal shaft
TW202324484A (zh) * 2021-12-03 2023-06-16 美商蘭姆研究公司 基板處理系統中用於增進屏蔽的寬覆蓋邊緣環

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DE69813014T2 (de) * 1997-11-03 2004-02-12 Asm America Inc., Phoenix Verbesserte kleinmassige waferhaleeinrichtung
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
JP4209618B2 (ja) * 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
AU2002366921A1 (en) * 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
JP4286025B2 (ja) * 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 石英治具の再生方法、再生使用方法および半導体装置の製造方法
TW200520632A (en) * 2003-09-05 2005-06-16 Tokyo Electron Ltd Focus ring and plasma processing apparatus
US7024105B2 (en) * 2003-10-10 2006-04-04 Applied Materials Inc. Substrate heater assembly
KR101585310B1 (ko) * 2004-12-15 2016-01-14 가부시키가이샤 니콘 기판 유지 장치, 노광 장치 및 디바이스 제조방법
KR100964775B1 (ko) * 2005-10-12 2010-06-21 파나소닉 주식회사 플라즈마 처리장치 및 플라즈마 처리방법
JP2007250967A (ja) * 2006-03-17 2007-09-27 Tokyo Electron Ltd プラズマ処理装置および方法とフォーカスリング
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US8287650B2 (en) * 2008-09-10 2012-10-16 Applied Materials, Inc. Low sloped edge ring for plasma processing chamber
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