CN105074869A - 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计 - Google Patents

在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计 Download PDF

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Publication number
CN105074869A
CN105074869A CN201480018535.XA CN201480018535A CN105074869A CN 105074869 A CN105074869 A CN 105074869A CN 201480018535 A CN201480018535 A CN 201480018535A CN 105074869 A CN105074869 A CN 105074869A
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CN
China
Prior art keywords
substrate
inches
lip
diameter
single ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480018535.XA
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English (en)
Chinese (zh)
Inventor
S·T·吴
C·李
H·达奥
A·莱恩
M·D·威尔沃斯
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Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN202010081458.XA priority Critical patent/CN111180305A/zh
Publication of CN105074869A publication Critical patent/CN105074869A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201480018535.XA 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计 Pending CN105074869A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010081458.XA CN111180305A (zh) 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361839823P 2013-06-26 2013-06-26
US61/839,823 2013-06-26
PCT/US2014/036213 WO2014209492A1 (en) 2013-06-26 2014-04-30 Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202010081458.XA Division CN111180305A (zh) 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计

Publications (1)

Publication Number Publication Date
CN105074869A true CN105074869A (zh) 2015-11-18

Family

ID=52142541

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201480018535.XA Pending CN105074869A (zh) 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计
CN202010081458.XA Pending CN111180305A (zh) 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202010081458.XA Pending CN111180305A (zh) 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计

Country Status (6)

Country Link
US (1) US20160099162A1 (enExample)
JP (2) JP6853038B2 (enExample)
KR (1) KR102253990B1 (enExample)
CN (2) CN105074869A (enExample)
TW (1) TWM492915U (enExample)
WO (1) WO2014209492A1 (enExample)

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CN111065965A (zh) * 2017-09-13 2020-04-24 株式会社Lg化学 图案化基底的制备方法

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US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US9633862B2 (en) * 2015-08-31 2017-04-25 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method
JP2020516770A (ja) * 2017-04-07 2020-06-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板端部上のプラズマ密度制御
EP3852137A1 (en) * 2017-07-24 2021-07-21 LAM Research Corporation Moveable edge ring design
CN118380375A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
CN108269753B (zh) * 2018-01-10 2023-12-05 池州海琳服装有限公司 一种硅片单面清洗机
CN108063110B (zh) * 2018-01-10 2023-11-24 池州海琳服装有限公司 一种硅片浮动支撑机构
TWI848010B (zh) * 2018-10-18 2024-07-11 美商蘭姆研究公司 用於斜面蝕刻器的下電漿排除區域環
JP7541005B2 (ja) 2018-12-03 2024-08-27 アプライド マテリアルズ インコーポレイテッド チャックとアーク放電に関する性能が改良された静電チャック設計
WO2020257095A1 (en) * 2019-06-18 2020-12-24 Lam Research Corporation Reduced diameter carrier ring hardware for substrate processing systems
KR20220038172A (ko) * 2019-08-05 2022-03-25 램 리써치 코포레이션 기판 프로세싱 시스템들을 위한 에지 링 시스템들
TWM602283U (zh) * 2019-08-05 2020-10-01 美商蘭姆研究公司 基板處理系統用之具有升降銷溝槽的邊緣環
JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
US20220282371A1 (en) * 2021-03-03 2022-09-08 Applied Materials, Inc. Electrostatic chuck with metal shaft
TW202324484A (zh) * 2021-12-03 2023-06-16 美商蘭姆研究公司 基板處理系統中用於增進屏蔽的寬覆蓋邊緣環

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US20050005859A1 (en) * 2001-12-13 2005-01-13 Akira Koshiishi Ring mechanism, and plasma processing device using the ring mechanism
CN1591793A (zh) * 2003-09-05 2005-03-09 东京毅力科创株式会社 聚焦环和等离子体处理装置
CN101038849A (zh) * 2006-03-17 2007-09-19 东京毅力科创株式会社 等离子体处理装置和方法以及聚焦环
US20080111984A1 (en) * 2004-12-15 2008-05-15 Nikon Corporation Substrate Holding Apparatus, Exposure Apparatus, and Device Fabrication Method
US20100059181A1 (en) * 2008-09-10 2010-03-11 Changhun Lee Low sloped edge ring for plasma processing chamber
KR20100043844A (ko) * 2008-10-21 2010-04-29 주식회사 테스 플라즈마 처리 장치
US20110126984A1 (en) * 2009-12-01 2011-06-02 Lam Research Corporation Edge ring assembly for plasma etching chambers
US20120270166A1 (en) * 2006-12-14 2012-10-25 Applied Materials, Inc. Rapid conductive cooling using a secondary process plane
TW201324674A (zh) * 2011-12-15 2013-06-16 Applied Materials Inc 用於極度邊緣可調性的延伸和獨立之射頻驅動陰極基材

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JP4209618B2 (ja) * 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
JP4286025B2 (ja) * 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 石英治具の再生方法、再生使用方法および半導体装置の製造方法
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KR100964775B1 (ko) * 2005-10-12 2010-06-21 파나소닉 주식회사 플라즈마 처리장치 및 플라즈마 처리방법
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
DE202010014805U1 (de) * 2009-11-02 2011-02-17 Lam Research Corporation (Delaware Corporation) Heissrandring mit geneigter oberer Oberfläche

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Publication number Priority date Publication date Assignee Title
US20050005859A1 (en) * 2001-12-13 2005-01-13 Akira Koshiishi Ring mechanism, and plasma processing device using the ring mechanism
CN1591793A (zh) * 2003-09-05 2005-03-09 东京毅力科创株式会社 聚焦环和等离子体处理装置
CN101162689B (zh) * 2003-09-05 2010-08-18 东京毅力科创株式会社 聚焦环和等离子体处理装置
US20080111984A1 (en) * 2004-12-15 2008-05-15 Nikon Corporation Substrate Holding Apparatus, Exposure Apparatus, and Device Fabrication Method
CN101038849A (zh) * 2006-03-17 2007-09-19 东京毅力科创株式会社 等离子体处理装置和方法以及聚焦环
US20120270166A1 (en) * 2006-12-14 2012-10-25 Applied Materials, Inc. Rapid conductive cooling using a secondary process plane
US20100059181A1 (en) * 2008-09-10 2010-03-11 Changhun Lee Low sloped edge ring for plasma processing chamber
KR20100043844A (ko) * 2008-10-21 2010-04-29 주식회사 테스 플라즈마 처리 장치
US20110126984A1 (en) * 2009-12-01 2011-06-02 Lam Research Corporation Edge ring assembly for plasma etching chambers
TW201324674A (zh) * 2011-12-15 2013-06-16 Applied Materials Inc 用於極度邊緣可調性的延伸和獨立之射頻驅動陰極基材
US20130155568A1 (en) * 2011-12-15 2013-06-20 Applied Materials, Inc. Extended and independent rf powered cathode substrate for extreme edge tunability

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111065965A (zh) * 2017-09-13 2020-04-24 株式会社Lg化学 图案化基底的制备方法
CN111065965B (zh) * 2017-09-13 2023-11-03 株式会社Lg化学 图案化基底的制备方法

Also Published As

Publication number Publication date
TWM492915U (zh) 2015-01-01
US20160099162A1 (en) 2016-04-07
WO2014209492A1 (en) 2014-12-31
CN111180305A (zh) 2020-05-19
KR20160023646A (ko) 2016-03-03
JP2016530706A (ja) 2016-09-29
JP2021068909A (ja) 2021-04-30
KR102253990B1 (ko) 2021-05-18
JP6853038B2 (ja) 2021-03-31

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Application publication date: 20151118

RJ01 Rejection of invention patent application after publication