TWM492915U - 在ｉｃｐ電漿處理腔室中用於高產出、基板極端邊緣缺陷減少之單環設計 - Google Patents

在ｉｃｐ電漿處理腔室中用於高產出、基板極端邊緣缺陷減少之單環設計 Download PDF

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Publication number
TWM492915U
TWM492915U TW103207940U TW103207940U TWM492915U TW M492915 U TWM492915 U TW M492915U TW 103207940 U TW103207940 U TW 103207940U TW 103207940 U TW103207940 U TW 103207940U TW M492915 U TWM492915 U TW M492915U
Authority
TW
Taiwan
Prior art keywords
substrate
inches
diameter
lip
single ring
Prior art date
Application number
TW103207940U
Other languages
English (en)
Chinese (zh)
Inventor
吳兆騰
李昌憲
道慧奇
藍亞當
威沃斯麥克Ｄ
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TWM492915U publication Critical patent/TWM492915U/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW103207940U 2013-06-26 2014-05-07 在ｉｃｐ電漿處理腔室中用於高產出、基板極端邊緣缺陷減少之單環設計 TWM492915U (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361839823P 2013-06-26 2013-06-26

Publications (1)

Publication Number Publication Date
TWM492915U true TWM492915U (zh) 2015-01-01

Family

ID=52142541

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103207940U TWM492915U (zh) 2013-06-26 2014-05-07 在ｉｃｐ電漿處理腔室中用於高產出、基板極端邊緣缺陷減少之單環設計

Country Status (6)

Country Link
US (1) US20160099162A1 (enExample)
JP (2) JP6853038B2 (enExample)
KR (1) KR102253990B1 (enExample)
CN (2) CN111180305A (enExample)
TW (1) TWM492915U (enExample)
WO (1) WO2014209492A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444579B2 (en) 2020-03-23 2025-10-14 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
US12500068B2 (en) 2018-08-13 2025-12-16 Lam Research Corporation Edge rings providing kinematic coupling and corresponding substrate processing systems
US12562350B2 (en) 2020-10-05 2026-02-24 Lam Research Corporation Moveable edge rings for plasma processing systems
US12695067B2 (en) 2017-11-21 2026-07-28 Lam Research Corporation Bottom and middle edge rings
US12695066B2 (en) 2019-08-05 2026-07-28 Lam Research Corporation Moveable edge rings with reduced capacitance variation for substrate processing systems

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US9633862B2 (en) * 2015-08-31 2017-04-25 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method
WO2018187679A1 (en) * 2017-04-07 2018-10-11 Applied Materials, Inc. Plasma density control on substrate edge
KR102591660B1 (ko) * 2017-07-24 2023-10-19 램 리써치 코포레이션 이동가능한 에지 링 설계들
KR102191611B1 (ko) * 2017-09-13 2020-12-15 주식회사 엘지화학 패턴화 기판의 제조 방법
CN108269753B (zh) * 2018-01-10 2023-12-05 池州海琳服装有限公司 一种硅片单面清洗机
CN108063110B (zh) * 2018-01-10 2023-11-24 池州海琳服装有限公司 一种硅片浮动支撑机构
WO2020081644A1 (en) * 2018-10-18 2020-04-23 Lam Research Corporation Lower plasma exclusion zone ring for bevel etcher
JP7541005B2 (ja) * 2018-12-03 2024-08-27 アプライド マテリアルズ インコーポレイテッド チャックとアーク放電に関する性能が改良された静電チャック設計
EP3987081A4 (en) * 2019-06-18 2023-07-05 Lam Research Corporation REDUCED DIAMETER SUPPORT RING MATERIAL FOR SUBSTRATE PROCESSING SYSTEMS
EP4010915A4 (en) * 2019-08-05 2023-12-13 Lam Research Corporation EDGE RING SYSTEMS FOR SUBSTRATE PROCESSING SYSTEMS
US20220282371A1 (en) * 2021-03-03 2022-09-08 Applied Materials, Inc. Electrostatic chuck with metal shaft
CN217387074U (zh) 2021-12-03 2022-09-06 朗姆研究公司 用于衬底处理系统中增强屏蔽的宽覆盖边缘环
WO2026106861A2 (en) * 2024-11-15 2026-05-21 Lam Research Corporation Electrostatic chuck

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1036406B1 (en) * 1997-11-03 2003-04-02 ASM America, Inc. Improved low mass wafer support system
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
US7882800B2 (en) * 2001-12-13 2011-02-08 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
JP4209618B2 (ja) * 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
JP4286025B2 (ja) * 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 石英治具の再生方法、再生使用方法および半導体装置の製造方法
TWI488236B (zh) * 2003-09-05 2015-06-11 東京威力科創股份有限公司 Focusing ring and plasma processing device
US7024105B2 (en) * 2003-10-10 2006-04-04 Applied Materials Inc. Substrate heater assembly
EP2995997B1 (en) * 2004-12-15 2017-08-30 Nikon Corporation Exposure apparatus, exposure method, and device fabricating method
US7736528B2 (en) * 2005-10-12 2010-06-15 Panasonic Corporation Plasma processing apparatus and plasma processing method
JP2007250967A (ja) * 2006-03-17 2007-09-27 Tokyo Electron Ltd プラズマ処理装置および方法とフォーカスリング
US7378618B1 (en) * 2006-12-14 2008-05-27 Applied Materials, Inc. Rapid conductive cooling using a secondary process plane
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US8287650B2 (en) * 2008-09-10 2012-10-16 Applied Materials, Inc. Low sloped edge ring for plasma processing chamber
KR20100043844A (ko) * 2008-10-21 2010-04-29 주식회사 테스 플라즈마 처리 장치
DE202010014805U1 (de) * 2009-11-02 2011-03-24 Lam Research Corporation (Delaware Corporation) Heissrandring mit geneigter oberer Oberfläche
DE202010015933U1 (de) * 2009-12-01 2011-05-05 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
US8988848B2 (en) * 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12695067B2 (en) 2017-11-21 2026-07-28 Lam Research Corporation Bottom and middle edge rings
US12500068B2 (en) 2018-08-13 2025-12-16 Lam Research Corporation Edge rings providing kinematic coupling and corresponding substrate processing systems
US12695066B2 (en) 2019-08-05 2026-07-28 Lam Research Corporation Moveable edge rings with reduced capacitance variation for substrate processing systems
US12444579B2 (en) 2020-03-23 2025-10-14 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
US12562350B2 (en) 2020-10-05 2026-02-24 Lam Research Corporation Moveable edge rings for plasma processing systems

Also Published As

Publication number Publication date
KR20160023646A (ko) 2016-03-03
WO2014209492A1 (en) 2014-12-31
US20160099162A1 (en) 2016-04-07
KR102253990B1 (ko) 2021-05-18
JP2016530706A (ja) 2016-09-29
JP2021068909A (ja) 2021-04-30
CN111180305A (zh) 2020-05-19
JP6853038B2 (ja) 2021-03-31
CN105074869A (zh) 2015-11-18

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