JP2016527706A5 - - Google Patents

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JP2016527706A5
JP2016527706A5 JP2016518033A JP2016518033A JP2016527706A5 JP 2016527706 A5 JP2016527706 A5 JP 2016527706A5 JP 2016518033 A JP2016518033 A JP 2016518033A JP 2016518033 A JP2016518033 A JP 2016518033A JP 2016527706 A5 JP2016527706 A5 JP 2016527706A5
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JP6227128B2 (ja
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JP2016518033A 2013-06-07 2014-06-06 マルチカラーｌｅｄ及びその製造方法 Active JP6227128B2 (ja)

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Application Number Priority Date Filing Date Title
US201361832377P 2013-06-07 2013-06-07
US61/832,377 2013-06-07
PCT/US2014/041308 WO2014197799A1 (en) 2013-06-07 2014-06-06 Multicolor led and method of fabricating thereof

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JP2016527706A JP2016527706A (ja) 2016-09-08
JP2016527706A5 true JP2016527706A5 (enExample) 2017-08-10
JP6227128B2 JP6227128B2 (ja) 2017-11-08

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US (3) US9054233B2 (enExample)
EP (1) EP3005429B1 (enExample)
JP (1) JP6227128B2 (enExample)
TW (1) TW201511357A (enExample)
WO (1) WO2014197799A1 (enExample)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102022266B1 (ko) * 2013-01-29 2019-09-18 삼성전자주식회사 나노구조 반도체 발광소자 제조방법
US9054233B2 (en) 2013-06-07 2015-06-09 Glo Ab Multicolor LED and method of fabricating thereof
KR20150053586A (ko) * 2013-11-08 2015-05-18 삼성전자주식회사 발광소자 패키지
EP3084847B1 (en) 2013-12-17 2018-02-14 Glo Ab Iii-nitride nanowire led with strain modified surface active region and method of making thereof
FR3019188B1 (fr) * 2014-03-27 2017-11-24 Commissariat Energie Atomique Procede de croissance d'un element allonge a partir d'un germe forme dans un creux d'une couche ou d'un plot de nucleation
KR102188497B1 (ko) * 2014-03-27 2020-12-09 삼성전자주식회사 나노구조 반도체 발광소자
WO2016022824A1 (en) 2014-08-08 2016-02-11 Glo Ab Pixilated display device based upon nanowire leds and method for making the same
KR20170066319A (ko) 2014-08-12 2017-06-14 글로 에이비 스트레인 수정된 표면 활성 영역을 가진 iii-질화물 나노와이어 led 및 이의 제조 방법
WO2016049507A1 (en) 2014-09-26 2016-03-31 Glo Ab Monolithic image chip for near-to-eye display
US10453825B2 (en) 2014-11-11 2019-10-22 Cree, Inc. Light emitting diode (LED) components and methods
FR3032064B1 (fr) * 2015-01-22 2018-03-09 Aledia Dispositif optoelectronique et son procede de fabrication
JP6156402B2 (ja) * 2015-02-13 2017-07-05 日亜化学工業株式会社 発光装置
FR3039929B1 (fr) * 2015-08-07 2018-08-10 Valeo Vision Dispositif d’eclairage et/ou de signalisation pour vehicule automobile
FR3041576B1 (fr) * 2015-09-25 2019-11-29 Valeo Vision Dispositif et procede permettant de conferer differentes couleurs blanches a un faisceau lumineux
FR3041575B1 (fr) * 2015-09-25 2019-05-24 Valeo Vision Dispositif lumineux comprenant une source lumineuse a batonnets avec des zones de couleurs differentes
US10790410B2 (en) 2015-10-23 2020-09-29 Sensor Electronic Technology, Inc. Light extraction from optoelectronic device
US9559240B1 (en) 2015-12-17 2017-01-31 International Business Machines Corporation Nano-pillar-based biosensing device
WO2017111801A1 (en) * 2015-12-24 2017-06-29 Intel Corporation Light emitting diode integration techniques for iii-v material systems
WO2017111827A1 (en) * 2015-12-26 2017-06-29 Intel Corporation Nanowire led pixel
US9978808B2 (en) 2016-05-04 2018-05-22 Glo Ab Monolithic multicolor direct view display containing different color LEDs and method of making thereof
FR3053434B1 (fr) * 2016-06-30 2019-06-28 Valeo Vision Module d'emission de lumiere blanche a spectre enrichi
FR3053760B1 (fr) * 2016-07-05 2020-07-17 Valeo Vision Source lumineuse et module lumineux correspondant pour vehicule automobile
US10177195B2 (en) 2016-09-30 2019-01-08 Intel Corporation Micro-LED displays
US10418499B2 (en) 2017-06-01 2019-09-17 Glo Ab Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof
US10734545B2 (en) 2017-06-21 2020-08-04 The Regents Of The University Of Michigan Monolithically integrated InGaN/GaN quantum nanowire devices
US10707374B2 (en) 2017-09-15 2020-07-07 Glo Ab Etendue enhancement for light emitting diode subpixels
WO2019071160A1 (en) 2017-10-06 2019-04-11 Glo Ab LIGHT-EMITTING DIODE CONTAINING OXIDIZED METAL CONTACTS
US11362238B2 (en) 2017-10-06 2022-06-14 Nanosys, Inc. Light emitting diode containing oxidized metal contacts
US11005004B2 (en) 2017-10-20 2021-05-11 Korea Advanced Institute Of Science And Technology Micro light emitting diode (LED) structure, method for manufacturing the same and display including the same
DE102017130760A1 (de) 2017-12-20 2019-06-27 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauteil und verfahren zur herstellung von optoelektronischen halbleiterbauteilen
FR3076080B1 (fr) * 2017-12-27 2019-11-29 Aledia Pseudo-substrat pour dispositif optoelectronique et son procede de fabrication
US10957736B2 (en) * 2018-03-12 2021-03-23 Cree, Inc. Light emitting diode (LED) components and methods
US11605668B2 (en) * 2018-05-21 2023-03-14 Intel Corporation Pixel architectures for low power micro light-emitting diode displays
DE102018116224A1 (de) * 2018-07-04 2020-01-09 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil
JP7105441B2 (ja) * 2018-07-26 2022-07-25 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7188689B2 (ja) * 2018-08-06 2022-12-13 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7320770B2 (ja) * 2018-09-28 2023-08-04 セイコーエプソン株式会社 発光装置およびプロジェクター
FR3087942B1 (fr) * 2018-10-29 2021-09-17 Commissariat Energie Atomique Dispositif d'affichage electroluminescent multi-couleurs et procede de fabrication d'un tel dispositif
JP7227463B2 (ja) 2018-12-27 2023-02-22 日亜化学工業株式会社 発光素子及びその製造方法
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
FR3098019B1 (fr) 2019-06-25 2022-05-20 Aledia Dispositif optoélectronique comprenant des éléments semi-conducteurs tridimensionnels et procédé pour sa fabrication
GB201910348D0 (en) * 2019-07-19 2019-09-04 Univ Sheffield LED Arrays
WO2021021415A1 (en) * 2019-07-28 2021-02-04 Applied Materials, Inc. Micro-led and micro-led manufacturing method
US11094782B1 (en) * 2020-02-19 2021-08-17 Intel Corporation Gate-all-around integrated circuit structures having depopulated channel structures
JP7485278B2 (ja) * 2020-03-09 2024-05-16 セイコーエプソン株式会社 発光装置およびプロジェクター
KR20210155693A (ko) 2020-06-16 2021-12-23 삼성전자주식회사 플랫 탑을 갖는 나노로드 반도체층과 이를 이용한 마이크로 led와 이를 포함하는 화소 플레이트와 이를 포함하는 디스플레이 장치와 전자장치들
TW202211498A (zh) * 2020-08-04 2022-03-16 英商普羅科技有限公司 Led裝置及製造方法
JP7520305B2 (ja) * 2020-08-31 2024-07-23 株式会社小糸製作所 半導体発光素子および半導体発光素子の製造方法
US11322649B2 (en) * 2020-09-15 2022-05-03 Applied Materials, Inc. Three color light sources integrated on a single wafer
JP7320794B2 (ja) * 2021-03-15 2023-08-04 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
JP2022144164A (ja) * 2021-03-18 2022-10-03 キオクシア株式会社 半導体装置、テンプレート、およびテンプレートの製造方法
CN118284974A (zh) * 2021-11-08 2024-07-02 亮锐有限责任公司 具有非重叠分割的双结led
US20250169260A1 (en) * 2022-01-26 2025-05-22 Ams-Osram International Gmbh Method for producing an array of light emitting elements and display
CN114975710A (zh) * 2022-05-06 2022-08-30 武汉大学 一种多色混合Micro-LED芯片及其制备方法
KR20240005286A (ko) * 2022-07-04 2024-01-12 삼성전자주식회사 발광 소자, 이를 포함하는 디스플레이 장치 및 그 제조 방법
CN114975699B (zh) * 2022-07-27 2022-09-27 北京大学 一种全彩氮化物半导体Micro-LED阵列的单片集成制备方法
US12446385B2 (en) 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US5795798A (en) * 1996-11-27 1998-08-18 The Regents Of The University Of California Method of making full color monolithic gan based leds
JP3906654B2 (ja) * 2000-07-18 2007-04-18 ソニー株式会社 半導体発光素子及び半導体発光装置
WO2002044443A1 (en) * 2000-11-30 2002-06-06 North Carolina State University Methods and apparatus for producing m'n based materials
US7122827B2 (en) 2003-10-15 2006-10-17 General Electric Company Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same
US20060038188A1 (en) * 2004-08-20 2006-02-23 Erchak Alexei A Light emitting diode systems
JP4462249B2 (ja) * 2005-09-22 2010-05-12 ソニー株式会社 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法
US20080149946A1 (en) 2006-12-22 2008-06-26 Philips Lumileds Lighting Company, Llc Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light
CN101681813B (zh) * 2007-01-12 2012-07-11 昆南诺股份有限公司 氮化物纳米线及其制造方法
KR100857410B1 (ko) 2007-03-08 2008-09-08 전북대학교산학협력단 백색 엘이디의 제조방법
JP5145120B2 (ja) * 2008-05-26 2013-02-13 パナソニック株式会社 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体発光素子の製造方法
KR101567121B1 (ko) * 2008-09-01 2015-11-06 가꼬호징 조찌가꾸잉 반도체 광소자 어레이 및 그의 제조방법
WO2010044129A1 (ja) * 2008-10-17 2010-04-22 国立大学法人北海道大学 半導体発光素子アレー、およびその製造方法
EP2449609A1 (en) * 2009-06-30 2012-05-09 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction
JP2011135058A (ja) * 2009-11-30 2011-07-07 Honda Motor Co Ltd 太陽電池素子、カラーセンサ、ならびに発光素子及び受光素子の製造方法
KR20110131801A (ko) * 2010-05-31 2011-12-07 삼성전자주식회사 발광 소자 및 다중 파장의 광을 만드는 방법
KR101710159B1 (ko) * 2010-09-14 2017-03-08 삼성전자주식회사 Ⅲ족 질화물 나노로드 발광소자 및 그 제조 방법
KR101897481B1 (ko) * 2010-11-04 2018-09-12 루미리즈 홀딩 비.브이. 결정학적으로 이완된 구조에 기초한 고체 상태 발광 디바이스
US8557507B2 (en) * 2010-11-05 2013-10-15 California Institute Of Technology Fabrication of nano-twinned nanopillars
US8937297B2 (en) * 2011-12-02 2015-01-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Optoelectronic device including nanowires with a core/shell structure
DE102013104273A1 (de) * 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Anordnung mit säulenartiger Struktur und einer aktiven Zone
US9054233B2 (en) * 2013-06-07 2015-06-09 Glo Ab Multicolor LED and method of fabricating thereof

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