JP2016522979A - 誘導自己組織化用途における中立層オーバーコートのトポグラフィの最小化 - Google Patents
誘導自己組織化用途における中立層オーバーコートのトポグラフィの最小化 Download PDFInfo
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- JP2016522979A JP2016522979A JP2016502295A JP2016502295A JP2016522979A JP 2016522979 A JP2016522979 A JP 2016522979A JP 2016502295 A JP2016502295 A JP 2016502295A JP 2016502295 A JP2016502295 A JP 2016502295A JP 2016522979 A JP2016522979 A JP 2016522979A
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- G—PHYSICS
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Abstract
Description
コータ-現像処理システムに、基板をロードするステップと、
前記基板にフォトレジスト材料をコーティングして、前記基板にフォトレジスト材料層形成するステップと、
前記フォトレジスト材料層をパターン化して、前記基板にフォトレジストパターンを形成するステップと、
前記基板を成膜処理システムに移送するステップと、
前記フォトレジストパターンおよび前記基板の露出部に、中立層を成膜するステップと、
を有する。
前記フォトレジスト材料のパターン化に引き続き、前記フォトレジストパターンを硬化して、後続の前記中立層の成膜に対して耐性のある前記フォトレジストパターンを得るステップ、
を有する。別の実施例では、当該方法は、さらに、
前記フォトレジスト材料のパターン化に引き続き、前記フォトレジストパターンをトリミングするステップ、
を有する。
前記フォトレジストパターンの上に成膜された前記中立層の一部をリフトオフして、後続の自己組織化(DSA)パターン化用の中立層テンプレートを露出させるステップと、
前記中立層テンプレートの上に、DSA材料層を成膜するステップと、
前記DSA材料層を熱処理して、DSAパターンを形成するステップと、
前記DSA材料層を現像して、その後の特徴物のエッチングのため、最終DSAパターンを露出させるステップと
を有する。
ブロックコポリマの一つの高分子ブロックの選択的エッチング後に残留する、特徴物の寸法である構造周期(Ls)を、パターン化構造の臨界寸法を決める基礎として使用してもよい。
図3Cに示す予備パターン化された基板は、成膜処理システムに移送される。ある実施例では、成膜処理システムは、GCIB処理システムである。適当なGCIB処理システムの例は、例えば、これに限られるものではないが、米国特許第8097860号、第7794798号、および米国特許出願公開第2010/0193701号に記載されている。これらの特許文献の全内容は、本願の参照として取り入れられる。GCIBの基本的な作動原理は、表面が高エネルギーのナノスケールのクラスターイオンビームで衝突された際に、コーティングが形成されるることである。高圧ガス(約10気圧)が、適当な形状のノズルを介して、実質的に低圧の真空下で膨脹した際に、クラスタが形成される。断熱的なガス膨脹、およびその後の冷却により、イオンクラスタが凝集される。
本発明の別の実施例では、予備パターン化基板は、原子層成膜(ALD)処理システムに移送される。例えば、好適なALD処理システムの非限定的な例は、米国特許出願公開第2007/0037412号、第2007/0237697号、第2005/0056219号に示されている。これらの特許文献は、本願の参照として取り入れられている。
Claims (17)
- 層状化基板をパターン化する方法であって、
コータ-現像処理システムに、基板をロードするステップと、
前記基板にフォトレジスト材料をコーティングして、前記基板にフォトレジスト材料層を形成するステップと、
前記フォトレジスト材料層をパターン化して、前記基板にフォトレジストパターンを形成するステップと、
前記基板を成膜処理システムに移送するステップと、
前記フォトレジストパターンおよび前記基板の露出部に、中立層を成膜するステップと、
を有する方法。 - 前記成膜処理システムは、ガスクラスタイオンビーム(GCIB)システムであり、
前記中立層は、第1の混合ガスから形成されたガスクラスタイオンのGCIB成膜を用いて成膜される、請求項1に記載の方法。 - 前記中立層は、前記フォトレジストパターンおよび前記基板の露出部の上に、非等方的に成膜される、請求項2に記載の方法。
- 前記第1の混合ガスは、少なくとも一つのC含有ガスを含む、請求項2に記載の方法。
- 前記第1の混合ガスは、少なくとも一つのO含有ガスを含む、請求項2に記載の方法。
- 前記第1の混合ガスは、少なくとも一つのH含有ガスを含む、請求項2に記載の方法。
- 前記第1の混合ガスは、少なくとも一つのSi含有ガスを含む、請求項2に記載の方法。
- 前記第1の混合ガスは、後続の誘導自己組織化(DSA)パターン化処理のため、前記中立層の化学的特性を設定するように調整される、請求項2に記載の方法。
- 前記成膜処理システムは、原子層成膜(ALD)システムであり、
前記中立層は、少なくとも一つの前駆体ガスを利用したALD成膜法を用いて成膜される、請求項1に記載の方法。 - 前記中立層は、前記フォトレジストパターンおよび前記基板の露出部の上に、非等方的に成膜される、請求項9に記載の方法。
- 前記少なくとも一つの前駆体ガスは、C含有ガスを含む、請求項8に記載の方法。
- 前記少なくとも一つの前駆体ガスは、H含有ガスを含む、請求項8に記載の方法。
- 前記少なくとも一つの前駆体ガスは、O含有ガスを含む、請求項8に記載の方法。
- 前記少なくとも一つの前駆体ガスは、Si含有ガスを含む、請求項8に記載の方法。
- さらに、
前記フォトレジスト材料のパターン化に引き続き、前記フォトレジストパターンをトリミングするステップ、
を有する、請求項1に記載の方法。 - さらに、
前記フォトレジスト材料のパターン化に引き続き、前記フォトレジストパターンを硬化して、後続の前記中立層の成膜に対して耐性のある前記フォトレジストパターンを得るステップ、
を有する、請求項1に記載の方法。 - さらに、
前記フォトレジストパターンの上に成膜された前記中立層の一部をリフトオフして、後続の自己組織化(DSA)パターン化用の中立層テンプレートを露出させるステップと、
前記中立層テンプレートの上に、DSA材料層を成膜するステップと、
前記DSA材料層を熱処理して、DSAパターンを形成するステップと、
前記DSA材料層を現像して、その後の特徴物のエッチングのため、最終DSAパターンを露出させるステップと
を有する、請求項1に記載の方法。
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US20140273514A1 (en) | 2014-09-18 |
JP6139011B2 (ja) | 2017-05-31 |
TW201501176A (zh) | 2015-01-01 |
TWI560746B (en) | 2016-12-01 |
WO2014152116A1 (en) | 2014-09-25 |
KR101691321B1 (ko) | 2016-12-29 |
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US9147574B2 (en) | 2015-09-29 |
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