JP2016522569A5 - - Google Patents

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Publication number
JP2016522569A5
JP2016522569A5 JP2016508221A JP2016508221A JP2016522569A5 JP 2016522569 A5 JP2016522569 A5 JP 2016522569A5 JP 2016508221 A JP2016508221 A JP 2016508221A JP 2016508221 A JP2016508221 A JP 2016508221A JP 2016522569 A5 JP2016522569 A5 JP 2016522569A5
Authority
JP
Japan
Prior art keywords
unit
ferroelectric
polymer
molar ratio
units
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016508221A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016522569A (ja
Filing date
Publication date
Priority claimed from FR1353571A external-priority patent/FR3004854B1/fr
Application filed filed Critical
Publication of JP2016522569A publication Critical patent/JP2016522569A/ja
Publication of JP2016522569A5 publication Critical patent/JP2016522569A5/ja
Pending legal-status Critical Current

Links

JP2016508221A 2013-04-19 2014-04-16 強誘電体メモリ装置 Pending JP2016522569A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1353571A FR3004854B1 (fr) 2013-04-19 2013-04-19 Dispositif de memoire ferroelectrique
FR1353571 2013-04-19
PCT/FR2014/050926 WO2014170606A1 (fr) 2013-04-19 2014-04-16 Dispositif de memoire ferroelectrique

Publications (2)

Publication Number Publication Date
JP2016522569A JP2016522569A (ja) 2016-07-28
JP2016522569A5 true JP2016522569A5 (enExample) 2017-04-27

Family

ID=48782411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016508221A Pending JP2016522569A (ja) 2013-04-19 2014-04-16 強誘電体メモリ装置

Country Status (7)

Country Link
US (1) US10199384B2 (enExample)
EP (1) EP2987178A1 (enExample)
JP (1) JP2016522569A (enExample)
KR (1) KR20150145257A (enExample)
CN (1) CN105283945B (enExample)
FR (1) FR3004854B1 (enExample)
WO (1) WO2014170606A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10636471B2 (en) 2016-04-20 2020-04-28 Micron Technology, Inc. Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays
US10403440B2 (en) 2016-12-02 2019-09-03 Carver Scientific, Inc. Capacitive energy storage device
ES2909846T3 (es) 2017-06-16 2022-05-10 Carrier Corp Sistema electrocalórico de transferencia de calor que comprende copolímeros
CN110444397B (zh) * 2019-07-26 2022-06-21 上海工程技术大学 一种线电极结构的有机铁电薄膜电容器及其制备方法
CN115053292A (zh) * 2020-03-17 2022-09-13 华为技术有限公司 平面存储器、立体存储器以及电子设备
EP4567054B1 (en) 2020-06-30 2025-12-17 Novocure GmbH Flexible transducer arrays with a polymer insulating layer for applying tumor treating fields (ttfields)
US12108605B2 (en) * 2022-08-19 2024-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method of forming the same
CN121270771A (zh) * 2025-12-10 2026-01-06 华中科技大学 一种铁电聚合物及交联改性制备铁电聚合物的方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2538157A1 (fr) 1982-12-15 1984-06-22 Saint Louis Inst Procede et dispositif pour polariser des materiaux ferroelectriques
JP2773215B2 (ja) * 1989-04-07 1998-07-09 ダイキン工業株式会社 高分子誘電体材料
US6787238B2 (en) * 1998-11-18 2004-09-07 The Penn State Research Foundation Terpolymer systems for electromechanical and dielectric applications
US6355749B1 (en) 2000-06-02 2002-03-12 The Penn State Research Foundation Semicrystalline ferroelectric fluoropolymers and process for preparing same
NO20005980L (no) 2000-11-27 2002-05-28 Thin Film Electronics Ab Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
AU2003281556A1 (en) * 2002-07-23 2004-02-09 Matsushita Electric Industrial Co., Ltd. Ferroelectric gate device
WO2004078814A2 (en) * 2003-03-04 2004-09-16 Honeywell International Inc. Fluorinated polymers, methods of production and uses in ferroelectric devices thereof
CN100437902C (zh) * 2003-12-22 2008-11-26 皇家飞利浦电子股份有限公司 铁电聚合物层的构图方法
NO324809B1 (no) * 2005-05-10 2007-12-10 Thin Film Electronics Asa Fremgangsmate til dannelse av ferroelektriske tynnfilmer, bruk av fremgangsmaten og et minne med et minnemateriale av ferroelektrisk oligomer
NO324539B1 (no) * 2005-06-14 2007-11-19 Thin Film Electronics Asa Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning
CN101356603B (zh) * 2005-12-28 2012-11-21 宾夕法尼亚州研究基金会 基于作为介质材料的独特聚(1,1-二氟乙烯)共聚物和三元共聚物的快速放电和高效率的高电能密度聚合物电容器
JP4124243B2 (ja) * 2006-06-05 2008-07-23 セイコーエプソン株式会社 記憶素子の製造方法、記憶素子、記憶装置、および電子機器、ならびにトランジスタの製造方法
US7842390B2 (en) 2006-10-03 2010-11-30 The Penn State Research Foundation Chain end functionalized fluoropolymers having good electrical properties and good chemical reactivity
WO2009005555A2 (en) * 2007-04-11 2009-01-08 The Penn State Research Foundation Methods to improve the efficiency and reduce the energy losses in high energy density capacitor films and articles comprising the same
EP1995736A1 (en) * 2007-05-22 2008-11-26 Rijksuniversiteit Groningen Ferro-electric device and modulatable injection barrier
CN101471180A (zh) * 2007-12-28 2009-07-01 中国科学院上海技术物理研究所 一种三元铁电聚合物薄膜材料的制备方法
FR2944285B1 (fr) * 2009-04-09 2011-11-25 Francois Bauer Procede de fabrication de terpolymeres a base de vdf, trfe et cfe ou ctfe
EP2655446B1 (en) * 2010-12-22 2014-10-29 Solvay Specialty Polymers Italy S.p.A. Vinylidene fluoride and trifluoroethylene polymers

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