JP2016518702A - ビアとコンデンサのプレートとの間に誘電体を有するコンデンサ - Google Patents

ビアとコンデンサのプレートとの間に誘電体を有するコンデンサ Download PDF

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Publication number
JP2016518702A
JP2016518702A JP2016501422A JP2016501422A JP2016518702A JP 2016518702 A JP2016518702 A JP 2016518702A JP 2016501422 A JP2016501422 A JP 2016501422A JP 2016501422 A JP2016501422 A JP 2016501422A JP 2016518702 A JP2016518702 A JP 2016518702A
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Prior art keywords
capacitor
substrate
plate
dielectric
partially
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Pending
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JP2016501422A
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Japanese (ja)
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JP2016518702A5 (https=
Inventor
ジェ−シュン・ラン
チェンジエ・ズオ
チャンハン・ユン
デイヴィッド・エフ・ベルディ
デイク・ディー・キム
ロバート・ピー・ミクルカ
マリオ・フランシスコ・ヴェレス
ジョンヘ・キム
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クアルコム，インコーポレイテッド
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Publication of JP2016518702A publication Critical patent/JP2016518702A/ja
Publication of JP2016518702A5 publication Critical patent/JP2016518702A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2016501422A 2013-03-15 2014-03-12 ビアとコンデンサのプレートとの間に誘電体を有するコンデンサ Pending JP2016518702A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/833,632 US9935166B2 (en) 2013-03-15 2013-03-15 Capacitor with a dielectric between a via and a plate of the capacitor
US13/833,632 2013-03-15
PCT/US2014/024118 WO2014150747A1 (en) 2013-03-15 2014-03-12 Capacitor with a dielectric between a via and a plate of the capacitor

Publications (2)

Publication Number Publication Date
JP2016518702A true JP2016518702A (ja) 2016-06-23
JP2016518702A5 JP2016518702A5 (https=) 2017-03-30

Family

ID=50625088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016501422A Pending JP2016518702A (ja) 2013-03-15 2014-03-12 ビアとコンデンサのプレートとの間に誘電体を有するコンデンサ

Country Status (6)

Country Link
US (1) US9935166B2 (https=)
EP (1) EP2973693B1 (https=)
JP (1) JP2016518702A (https=)
KR (1) KR20150130516A (https=)
CN (1) CN105009280B (https=)
WO (1) WO2014150747A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
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JP2018074134A (ja) * 2016-10-24 2018-05-10 大日本印刷株式会社 高周波部品及びその製造方法
JP2019033169A (ja) * 2017-08-08 2019-02-28 大日本印刷株式会社 貫通電極基板
JP2023535903A (ja) * 2020-07-20 2023-08-22 タレス・アレーニア・スペース・イタリア・エッセ・ピ・ア・コン・ウニコ・ソシオ 宇宙用途のためのハイブリッド密閉モジュールのための容量性フィードスルー
US12525397B2 (en) 2022-12-29 2026-01-13 Samsung Electro-Mechanics Co., Ltd. Capacitor component and manufacturing method of capacitor component

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US9954267B2 (en) 2015-12-28 2018-04-24 Qualcomm Incorporated Multiplexer design using a 2D passive on glass filter integrated with a 3D through glass via filter
US10373868B2 (en) * 2016-01-18 2019-08-06 Infineon Technologies Austria Ag Method of processing a porous conductive structure in connection to an electronic component on a substrate
US11616014B2 (en) * 2017-09-20 2023-03-28 Intel Corporation Peripheral inductors
JP2019102733A (ja) * 2017-12-06 2019-06-24 凸版印刷株式会社 配線基板、半導体装置、及び配線基板の製造方法
TWI669997B (zh) * 2018-01-25 2019-08-21 欣興電子股份有限公司 線路板結構及其製作方法
KR102609518B1 (ko) 2018-09-21 2023-12-05 삼성전자주식회사 반도체 소자 형성 방법
US12322669B2 (en) * 2021-04-23 2025-06-03 Beijing Boe Sensor Technology Co., Ltd. Substrate integrated with passive devices and manufacturing method thereof
US20220375865A1 (en) * 2021-05-18 2022-11-24 Intel Corporation Microelectronic assemblies with glass substrates and magnetic core inductors
US20220407212A1 (en) * 2021-06-17 2022-12-22 Intel Corporation Millimeter wave components in a glass core of a substrate
CN114400286B (zh) * 2022-01-14 2023-04-07 成都海威华芯科技有限公司 一种高可靠性通孔电容和制作方法

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Cited By (13)

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Publication number Priority date Publication date Assignee Title
JP7211445B2 (ja) 2016-10-24 2023-01-24 大日本印刷株式会社 高周波部品及びその製造方法
JP7586202B2 (ja) 2016-10-24 2024-11-19 大日本印刷株式会社 高周波部品及びその製造方法
JP2021101483A (ja) * 2016-10-24 2021-07-08 大日本印刷株式会社 高周波部品及びその製造方法
JP2018074134A (ja) * 2016-10-24 2018-05-10 大日本印刷株式会社 高周波部品及びその製造方法
JP2023040216A (ja) * 2016-10-24 2023-03-22 大日本印刷株式会社 高周波部品及びその製造方法
JP2021122066A (ja) * 2017-08-08 2021-08-26 大日本印刷株式会社 貫通電極基板
JP2023010784A (ja) * 2017-08-08 2023-01-20 大日本印刷株式会社 貫通電極基板
JP7176594B2 (ja) 2017-08-08 2022-11-22 大日本印刷株式会社 貫通電極基板
JP7552671B2 (ja) 2017-08-08 2024-09-18 大日本印刷株式会社 貫通電極基板
JP2019033169A (ja) * 2017-08-08 2019-02-28 大日本印刷株式会社 貫通電極基板
JP2023535903A (ja) * 2020-07-20 2023-08-22 タレス・アレーニア・スペース・イタリア・エッセ・ピ・ア・コン・ウニコ・ソシオ 宇宙用途のためのハイブリッド密閉モジュールのための容量性フィードスルー
JP7817233B2 (ja) 2020-07-20 2026-02-18 タレス・アレーニア・スペース・イタリア・エッセ・ピ・ア・コン・ウニコ・ソシオ 宇宙用途のためのハイブリッド密閉モジュールのための容量性フィードスルー
US12525397B2 (en) 2022-12-29 2026-01-13 Samsung Electro-Mechanics Co., Ltd. Capacitor component and manufacturing method of capacitor component

Also Published As

Publication number Publication date
EP2973693B1 (en) 2020-08-26
CN105009280A (zh) 2015-10-28
US9935166B2 (en) 2018-04-03
US20140268616A1 (en) 2014-09-18
WO2014150747A1 (en) 2014-09-25
KR20150130516A (ko) 2015-11-23
EP2973693A1 (en) 2016-01-20
CN105009280B (zh) 2017-12-15

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