JP2016513914A5 - - Google Patents
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- Publication number
- JP2016513914A5 JP2016513914A5 JP2015561534A JP2015561534A JP2016513914A5 JP 2016513914 A5 JP2016513914 A5 JP 2016513914A5 JP 2015561534 A JP2015561534 A JP 2015561534A JP 2015561534 A JP2015561534 A JP 2015561534A JP 2016513914 A5 JP2016513914 A5 JP 2016513914A5
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- level
- voltage level
- circuit
- coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/787,590 | 2013-03-06 | ||
| US13/787,590 US9306553B2 (en) | 2013-03-06 | 2013-03-06 | Voltage level shifter with a low-latency voltage boost circuit |
| PCT/US2014/020238 WO2014138033A1 (en) | 2013-03-06 | 2014-03-04 | Voltage level shifter with a low-latency voltage boost circuit |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019005284A Division JP2019097179A (ja) | 2013-03-06 | 2019-01-16 | 待ち時間が短い電圧昇圧回路を備えた電圧レベルシフタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016513914A JP2016513914A (ja) | 2016-05-16 |
| JP2016513914A5 true JP2016513914A5 (enExample) | 2017-03-16 |
| JP6517157B2 JP6517157B2 (ja) | 2019-05-22 |
Family
ID=50336567
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015561534A Expired - Fee Related JP6517157B2 (ja) | 2013-03-06 | 2014-03-04 | 待ち時間が短い電圧昇圧回路を備えた電圧レベルシフタ |
| JP2019005284A Pending JP2019097179A (ja) | 2013-03-06 | 2019-01-16 | 待ち時間が短い電圧昇圧回路を備えた電圧レベルシフタ |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019005284A Pending JP2019097179A (ja) | 2013-03-06 | 2019-01-16 | 待ち時間が短い電圧昇圧回路を備えた電圧レベルシフタ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9306553B2 (enExample) |
| EP (1) | EP2965425B1 (enExample) |
| JP (2) | JP6517157B2 (enExample) |
| KR (1) | KR102122304B1 (enExample) |
| CN (1) | CN105027439B (enExample) |
| WO (1) | WO2014138033A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9473120B1 (en) | 2015-05-18 | 2016-10-18 | Qualcomm Incorporated | High-speed AC-coupled inverter-based buffer with replica biasing |
| JP6820480B2 (ja) * | 2015-12-08 | 2021-01-27 | 株式会社ソシオネクスト | 出力回路 |
| CN106067804B (zh) * | 2016-08-04 | 2023-04-07 | 成都博思微科技有限公司 | 一种时钟信号的电平位移幅度控制电路 |
| TWI723470B (zh) * | 2018-07-31 | 2021-04-01 | 台灣積體電路製造股份有限公司 | 驅動電路、積體電路、及操作驅動電路的方法 |
| KR102594977B1 (ko) * | 2019-04-09 | 2023-10-30 | 에스케이하이닉스 주식회사 | 신호전달회로 및 이를 포함하는 반도체 장치 |
| JP7379660B2 (ja) * | 2019-08-09 | 2023-11-14 | シリコン ストーリッジ テクノロージー インコーポレイテッド | 集積回路のための改善されたレベルシフタ |
| KR102244707B1 (ko) * | 2019-09-20 | 2021-04-27 | 고려대학교 산학협력단 | 조건부 스위칭 신호를 위한 주기적인 리프레시 동작을 수행하는 용량성 결합 레벨 시프터 및 그 동작 방법 |
| CN112865778B (zh) * | 2019-11-28 | 2025-07-25 | 硅存储技术股份有限公司 | 用于集成电路的低电压电平移位器 |
| CN111106822B (zh) * | 2019-12-03 | 2023-12-12 | 上海集成电路研发中心有限公司 | 一种电源上电模块 |
| CN114679167B (zh) * | 2022-04-12 | 2023-05-05 | 电子科技大学 | 一种高速无静态功耗的电平位移电路 |
| US20250141451A1 (en) * | 2023-10-27 | 2025-05-01 | STMicroelectronics International N. V. | Level shifting circuit |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09148913A (ja) * | 1995-11-21 | 1997-06-06 | Seiko Epson Corp | 高電位差レベルシフト回路 |
| US6064250A (en) * | 1996-07-29 | 2000-05-16 | Townsend And Townsend And Crew Llp | Various embodiments for a low power adaptive charge pump circuit |
| TW362277B (en) * | 1996-07-29 | 1999-06-21 | Hynix Semiconductor Inc | Charge pump for a semiconductor substrate |
| JP2880493B2 (ja) * | 1997-02-03 | 1999-04-12 | 松下電器産業株式会社 | チャージポンプ回路および論理回路 |
| IT1304060B1 (it) | 1998-12-29 | 2001-03-07 | St Microelectronics Srl | Variatore di livello per circuiteria a tensione d'alimentazionemultipla |
| WO2001056159A1 (en) * | 2000-01-27 | 2001-08-02 | Hitachi, Ltd. | Semiconductor device |
| JP4432197B2 (ja) * | 2000-03-24 | 2010-03-17 | セイコーエプソン株式会社 | 多段レベルシフト回路およびそれを用いた半導体装置 |
| CN1233093C (zh) | 2002-02-20 | 2005-12-21 | 松下电器产业株式会社 | 驱动电路 |
| US20040104756A1 (en) | 2002-12-03 | 2004-06-03 | Payne James E. | Voltage level shifter circuit having high speed and low switching power |
| US6894537B1 (en) | 2002-12-18 | 2005-05-17 | National Semiconductor Corporation | Apparatus and method for level shifting in power-on reset circuitry in dual power supply domains |
| US7268588B2 (en) | 2005-06-29 | 2007-09-11 | Freescale Semiconductor, Inc. | Cascadable level shifter cell |
| US7304530B2 (en) | 2005-06-30 | 2007-12-04 | Silicon Laboratories Inc. | Utilization of device types having different threshold voltages |
| KR100711516B1 (ko) * | 2006-02-14 | 2007-04-27 | 한양대학교 산학협력단 | 저전력 및 소면적의 용량 결합형 레벨 시프트 회로 |
| JP4787671B2 (ja) | 2006-05-16 | 2011-10-05 | 旭化成エレクトロニクス株式会社 | クロック昇圧回路 |
| KR101230313B1 (ko) * | 2006-07-05 | 2013-02-06 | 재단법인서울대학교산학협력재단 | 레벨 시프터 및 그의 구동 방법 |
| US7777547B2 (en) | 2007-11-22 | 2010-08-17 | Mediatek Inc. | Level shifter for high-speed and low-leakage operation |
| US7800426B2 (en) | 2008-03-27 | 2010-09-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Two voltage input level shifter with switches for core power off application |
| KR100911866B1 (ko) * | 2008-04-14 | 2009-08-11 | 주식회사 하이닉스반도체 | 내부전압 생성회로를 포함하는 반도체 메모리장치 |
| SG169941A1 (en) * | 2009-09-11 | 2011-04-29 | Agency Science Tech & Res | Circuit arrangement |
-
2013
- 2013-03-06 US US13/787,590 patent/US9306553B2/en active Active
-
2014
- 2014-03-04 JP JP2015561534A patent/JP6517157B2/ja not_active Expired - Fee Related
- 2014-03-04 CN CN201480012224.2A patent/CN105027439B/zh active Active
- 2014-03-04 KR KR1020157027360A patent/KR102122304B1/ko active Active
- 2014-03-04 EP EP14711409.4A patent/EP2965425B1/en active Active
- 2014-03-04 WO PCT/US2014/020238 patent/WO2014138033A1/en not_active Ceased
-
2019
- 2019-01-16 JP JP2019005284A patent/JP2019097179A/ja active Pending
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