JP2016213490A5 - - Google Patents

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Publication number
JP2016213490A5
JP2016213490A5 JP2016142915A JP2016142915A JP2016213490A5 JP 2016213490 A5 JP2016213490 A5 JP 2016213490A5 JP 2016142915 A JP2016142915 A JP 2016142915A JP 2016142915 A JP2016142915 A JP 2016142915A JP 2016213490 A5 JP2016213490 A5 JP 2016213490A5
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JP
Japan
Prior art keywords
wafer
light emitting
substrate
semiconductor structure
layer
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JP2016142915A
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English (en)
Japanese (ja)
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JP2016213490A (ja
JP6294402B2 (ja
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Publication of JP2016213490A5 publication Critical patent/JP2016213490A5/ja
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JP2016142915A 2011-08-26 2016-07-21 半導体構造の処理方法 Active JP6294402B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161527634P 2011-08-26 2011-08-26
US61/527,634 2011-08-26

Related Parent Applications (1)

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JP2014526585A Division JP6305337B2 (ja) 2011-08-26 2012-08-21 半導体構造の処理方法

Publications (3)

Publication Number Publication Date
JP2016213490A JP2016213490A (ja) 2016-12-15
JP2016213490A5 true JP2016213490A5 (https=) 2017-04-20
JP6294402B2 JP6294402B2 (ja) 2018-03-14

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JP2014526585A Active JP6305337B2 (ja) 2011-08-26 2012-08-21 半導体構造の処理方法
JP2016142915A Active JP6294402B2 (ja) 2011-08-26 2016-07-21 半導体構造の処理方法

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JP2014526585A Active JP6305337B2 (ja) 2011-08-26 2012-08-21 半導体構造の処理方法

Country Status (7)

Country Link
US (1) US10056531B2 (https=)
EP (1) EP2748864B1 (https=)
JP (2) JP6305337B2 (https=)
KR (2) KR101965265B1 (https=)
CN (1) CN103748696B (https=)
TW (2) TWI583029B (https=)
WO (1) WO2013030718A1 (https=)

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EP2732478B1 (en) 2011-07-15 2018-09-19 Lumileds Holding B.V. Method of bonding a semiconductor device to a support substrate
WO2013118072A2 (en) 2012-02-10 2013-08-15 Koninklijke Philips N.V. Wavelength converted light emitting device
KR20170069240A (ko) * 2014-10-01 2017-06-20 코닌클리케 필립스 엔.브이. 조절가능한 방출 스펙트럼을 갖는 광원
US10217914B2 (en) 2015-05-27 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor light emitting device
JP2017220479A (ja) * 2016-06-03 2017-12-14 株式会社ディスコ 発光ダイオードチップの製造方法
JP2017224726A (ja) * 2016-06-15 2017-12-21 株式会社ディスコ 発光ダイオードチップの製造方法
JP2017224728A (ja) * 2016-06-15 2017-12-21 株式会社ディスコ 発光ダイオードチップの製造方法
JP2018014425A (ja) * 2016-07-21 2018-01-25 株式会社ディスコ 発光ダイオードチップの製造方法
TWI759289B (zh) * 2017-03-21 2022-04-01 晶元光電股份有限公司 發光元件
US10559727B2 (en) * 2017-07-25 2020-02-11 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Manufacturing method of colorful Micro-LED, display modlue and terminals
CN109461805B (zh) * 2018-03-07 2021-08-10 普瑞光电股份有限公司 具有位于包含荧光体的玻璃转换板上的玻璃透镜的汽车led光源
DE112018007310T5 (de) 2018-03-21 2020-12-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische vorrichtung, die eine leuchtstoffplatte aufweist und verfahren zur herstellung der optoelektronischen vorrichtung
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JP2019212875A (ja) * 2018-06-08 2019-12-12 信越半導体株式会社 発光素子及び発光素子の製造方法
JP7108196B2 (ja) 2019-12-26 2022-07-28 日亜化学工業株式会社 発光装置、波長変換部材の製造方法及び発光装置の製造方法
KR20210123064A (ko) * 2020-04-02 2021-10-13 웨이브로드 주식회사 3족 질화물 반도체 소자를 제조하는 방법

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JP2002344029A (ja) 2001-05-17 2002-11-29 Rohm Co Ltd 発光ダイオードの色調調整方法
TWI231054B (en) * 2003-03-13 2005-04-11 Showa Denko Kk Light-emitting diode and its manufacturing method
WO2005050748A1 (ja) 2003-11-19 2005-06-02 Nichia Corporation 半導体素子及びその製造方法
JP4594708B2 (ja) * 2003-12-05 2010-12-08 昭和電工株式会社 発光ダイオードおよびその製造方法、発光ダイオードランプ。
JP2005259912A (ja) 2004-03-10 2005-09-22 Shin Etsu Handotai Co Ltd 発光素子の製造方法
WO2005091390A1 (en) * 2004-03-18 2005-09-29 Showa Denko K.K. Group iii nitride semiconductor light-emitting device and producing method thereof
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US10147843B2 (en) 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
DE102008039790B4 (de) 2008-08-26 2022-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
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WO2010110204A1 (ja) * 2009-03-27 2010-09-30 コニカミノルタオプト株式会社 蛍光体部材、蛍光体部材の製造方法、及び照明装置
US8581229B2 (en) 2009-11-23 2013-11-12 Koninklijke Philips N.V. III-V light emitting device with thin n-type region

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