JP6305337B2 - 半導体構造の処理方法 - Google Patents

半導体構造の処理方法 Download PDF

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JP6305337B2
JP6305337B2 JP2014526585A JP2014526585A JP6305337B2 JP 6305337 B2 JP6305337 B2 JP 6305337B2 JP 2014526585 A JP2014526585 A JP 2014526585A JP 2014526585 A JP2014526585 A JP 2014526585A JP 6305337 B2 JP6305337 B2 JP 6305337B2
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substrate
wafer
light emitting
semiconductor structure
type region
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JP2014525674A (ja
Inventor
チャンドラ バート，ジェローム
チャンドラ バート，ジェローム
アレキサンダー ステイガーワルド，ダニエル
アレキサンダー ステイガーワルド，ダニエル
デヴィッド キャムラス，マイケル
デヴィッド キャムラス，マイケル
ホー チョイ，ハン
ホー チョイ，ハン
フレデリク ガードナー，ネイサン
フレデリク ガードナー，ネイサン
ボリソビッチ シェチェキン，オレグ
ボリソビッチ シェチェキン，オレグ
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Koninklijke Philips NV
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Koninklijke Philips NV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
JP2014526585A 2011-08-26 2012-08-21 半導体構造の処理方法 Active JP6305337B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161527634P 2011-08-26 2011-08-26
US61/527,634 2011-08-26
PCT/IB2012/054225 WO2013030718A1 (en) 2011-08-26 2012-08-21 Method of processing a semiconductor structure

Related Child Applications (1)

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JP2016142915A Division JP6294402B2 (ja) 2011-08-26 2016-07-21 半導体構造の処理方法

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JP2014525674A JP2014525674A (ja) 2014-09-29
JP6305337B2 true JP6305337B2 (ja) 2018-04-04

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US (1) US10056531B2 (https=)
EP (1) EP2748864B1 (https=)
JP (2) JP6305337B2 (https=)
KR (2) KR101965265B1 (https=)
CN (1) CN103748696B (https=)
TW (2) TWI583029B (https=)
WO (1) WO2013030718A1 (https=)

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EP2732478B1 (en) 2011-07-15 2018-09-19 Lumileds Holding B.V. Method of bonding a semiconductor device to a support substrate
WO2013118072A2 (en) 2012-02-10 2013-08-15 Koninklijke Philips N.V. Wavelength converted light emitting device
KR20170069240A (ko) * 2014-10-01 2017-06-20 코닌클리케 필립스 엔.브이. 조절가능한 방출 스펙트럼을 갖는 광원
US10217914B2 (en) 2015-05-27 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor light emitting device
JP2017220479A (ja) * 2016-06-03 2017-12-14 株式会社ディスコ 発光ダイオードチップの製造方法
JP2017224726A (ja) * 2016-06-15 2017-12-21 株式会社ディスコ 発光ダイオードチップの製造方法
JP2017224728A (ja) * 2016-06-15 2017-12-21 株式会社ディスコ 発光ダイオードチップの製造方法
JP2018014425A (ja) * 2016-07-21 2018-01-25 株式会社ディスコ 発光ダイオードチップの製造方法
TWI759289B (zh) * 2017-03-21 2022-04-01 晶元光電股份有限公司 發光元件
US10559727B2 (en) * 2017-07-25 2020-02-11 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Manufacturing method of colorful Micro-LED, display modlue and terminals
CN109461805B (zh) * 2018-03-07 2021-08-10 普瑞光电股份有限公司 具有位于包含荧光体的玻璃转换板上的玻璃透镜的汽车led光源
DE112018007310T5 (de) 2018-03-21 2020-12-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische vorrichtung, die eine leuchtstoffplatte aufweist und verfahren zur herstellung der optoelektronischen vorrichtung
CN110544641A (zh) * 2018-05-28 2019-12-06 山东浪潮华光光电子股份有限公司 一种发光二极管芯片的测试方法
JP2019212875A (ja) * 2018-06-08 2019-12-12 信越半導体株式会社 発光素子及び発光素子の製造方法
JP7108196B2 (ja) 2019-12-26 2022-07-28 日亜化学工業株式会社 発光装置、波長変換部材の製造方法及び発光装置の製造方法
KR20210123064A (ko) * 2020-04-02 2021-10-13 웨이브로드 주식회사 3족 질화물 반도체 소자를 제조하는 방법

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Also Published As

Publication number Publication date
JP2016213490A (ja) 2016-12-15
TWI635628B (zh) 2018-09-11
KR102082499B1 (ko) 2020-02-27
JP2014525674A (ja) 2014-09-29
TW201318229A (zh) 2013-05-01
JP6294402B2 (ja) 2018-03-14
KR20190038671A (ko) 2019-04-08
CN103748696A (zh) 2014-04-23
EP2748864B1 (en) 2020-02-05
US10056531B2 (en) 2018-08-21
WO2013030718A1 (en) 2013-03-07
KR101965265B1 (ko) 2019-04-04
TW201717436A (zh) 2017-05-16
EP2748864A1 (en) 2014-07-02
CN103748696B (zh) 2018-06-22
KR20140053361A (ko) 2014-05-07
TWI583029B (zh) 2017-05-11
US20140179029A1 (en) 2014-06-26

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