TWI583029B - 處理半導體結構之方法 - Google Patents
處理半導體結構之方法 Download PDFInfo
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- TWI583029B TWI583029B TW101130877A TW101130877A TWI583029B TW I583029 B TWI583029 B TW I583029B TW 101130877 A TW101130877 A TW 101130877A TW 101130877 A TW101130877 A TW 101130877A TW I583029 B TWI583029 B TW I583029B
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- 239000004065 semiconductor Substances 0.000 title claims description 78
- 238000000034 method Methods 0.000 title claims description 37
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- 239000000203 mixture Substances 0.000 description 9
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 7
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- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 1
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
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- 229910005540 GaP Inorganic materials 0.000 description 1
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- 239000005083 Zinc sulfide Substances 0.000 description 1
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- 238000002679 ablation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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- 230000004888 barrier function Effects 0.000 description 1
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- 229910052794 bromium Inorganic materials 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
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- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
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- 239000005283 halide glass Substances 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
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- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
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- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- BWOROQSFKKODDR-UHFFFAOYSA-N oxobismuth;hydrochloride Chemical compound Cl.[Bi]=O BWOROQSFKKODDR-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
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- 238000007639 printing Methods 0.000 description 1
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- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description
本發明係關於將包含一半導體結構之一晶圓接合至一基板,然後將該晶圓處理成多個發光裝置。
包含發光二極體(LED)、諧振腔發光二極體(RCLED)、垂直腔雷射二極體(VCSEL)及邊緣發射雷射之半導體發光裝置皆在當前可用之最高效光源之列。當前在製造能夠跨越可見光譜操作之高亮度發光裝置中所關注之材料系統包含III族至V族半導體,特定而言鎵、鋁、銦與氮之二元、三元及四元合金(亦稱作III族氮化物材料)。通常,藉由金屬-有機物化學汽相沈積(MOCVD)、分子束磊晶(MBE)或其他磊晶技術在一藍寶石、碳化矽、III族氮化物或其他適合基板上磊晶生長不同組合物及摻雜劑濃度之一半導體層堆疊來製作III族氮化物發光裝置。該堆疊通常包含形成在基板上方之摻雜有(舉例而言)Si之一或多個n型層、形成在一或多個n型層上方之一作用區中之一或多個發光層及形成在該作用區上方之摻雜有(舉例而言)Mg之一或多個p型層。在該等n型區及p型區上形成電觸點。
隨著發射藍色光或紫外光之高效LED之發展,產生透過由LED發射之初級光之一部分之磷光體轉換來產生白色光之LED已變得可行。該磷光體將初級光之一部分轉換至在較長波長處之次級光。未經轉換之初級光可與次級光組合以產生白色光。
圖13圖解說明在US 7,553,683中較詳細闡述之一種形成一經磷光體轉換之發光裝置之方法100。首先,產生一波長轉換材料薄片(步驟102)。可使用(例如)分散在諸如玻璃之一無機材料中之一磷光體或其他類似發光材料產生該波長轉換材料薄片。在一坩堝中加熱磷光體與粉末玻璃之一充分均質化混合物。在該玻璃混合物熔融之後,在爐中均質化熔體,然後將其傾注至一板上且准許其硬化成一扁平薄片。一旦該波長轉換材料薄片硬化,即將該薄片分離成若干個個別元件(步驟104)。該等個別波長轉換元件經調整大小以被安裝在一LED晶粒上方。然後提供一半導體發光裝置晶粒(步驟106)。該LED晶粒可係一經安裝之晶粒,例如安裝在一反射器杯或一基台中。另一選擇係,該LED晶粒可係未經安裝的。然後將一波長轉換元件接合至該LED晶粒(步驟108)。
本發明之一目的係提供一種在將一半導體結構接合至一第二基板之後將該半導體結構處理成若干發光裝置之方法。在接合之後的處理可准許在接合期間使用較高溫度。
根據本發明之實施例之一種方法包含提供包含在一生長基板上生長之一半導體結構之一晶圓,該半導體結構包括夾在一n型區與一p型區之間的一發光層。將該晶圓接合至一第二基板。移除該生長基板。在將晶圓接合至第二基板之後,將晶圓處理成多個發光裝置。
由於在將晶圓接合至第二基板之後而非之前將該晶圓處
理成發光裝置,因此可使用較高接合溫度及需要較高處理溫度之基板材料,此可改良發光裝置之效能。
在圖13之方法中,在將半導體材料之一晶圓生長、處理成若干裝置且單粒化成個別裝置晶片之後,將波長轉換玻璃部件接合至LED晶粒。在處理及單粒化完成之後,通常可僅在高達~400℃之溫度處處理LED晶片。在較高溫度處處理LED可導致LED效能特徵之退化及在處理期間沈積之層之潛在分層或破裂。諸多適合之玻璃層要求接合溫度大大超過400℃。因此,圖13之製程溫度約束(~400℃)限制可使用之材料之選擇。另外,具有較低接合溫度之適合玻璃往往比具有較高接合溫度之適合玻璃更具光學吸收性-尤其在較短光學波長處。併入有較低溫度接合玻璃之裝置可藉此招致一效能損失。
在本發明之實施例中,在一晶圓級製程中,在半導體結構之生長之後及在進一步處理半導體結構之前,(舉例而言)藉由形成金屬觸點而將包含安置在一n型區與一p型區之間的一發光區之一半導體結構接合至一高指數基板。然後將該半導體結構處理成諸如發光二極體之發光裝置。如在本文中所用,「晶圓」指在將一結構分割成較小結構之前的結構,諸如在其上已生長有用於諸多發光裝置之半導體材料之一生長基板。雖然在下文實例中該半導體發光裝置係發藍色光或UV光之III族氮化物LED,但亦可使用除LED外的半導體發光裝置,諸如由其他材料系統(諸如其他
III族至V族材料、III族磷化物、III族砷化物、II族至VI族材料、ZnO或基於Si之材料)製成之雷射二極體及半導體發光裝置。
圖1圖解說明在一生長基板11上生長之一半導體結構13。基板11可係任何適合基板,諸如(舉例而言)藍寶石、SiC、Si、GaN或合成基板。該半導體結構包含夾在n型區12與p型區16之間的一發光區或作用區14。一n型區12可首先生長,且可包含不同組合物及摻雜劑濃度之多個層,其包含(舉例而言)諸如緩衝層或成核層之準備層,及/或經設計以促進生長基板之移除的層(其可係n型或並非有意摻雜的),及經設計用於發光區高效發射光所期望之特定光學或電學特性之n型或甚至p型裝置層。一發光區或作用區14在n型區12上方生長。適合發光區之實例包含一單個厚或薄發光層,或包含藉由障壁層分離之多個薄或厚發光層之一多量子井發光區。然後一p型區16可在發光區14上方生長。如同n型區12,p型區16可包含不同組合物、厚度及摻雜劑濃度之多個層,包含並非有意摻雜之層或n型層。裝置中所有半導體材料之總厚度在某些實施例中小於10 μm,且在某些實施例中小於6 μm。在某些實施例中,半導體材料可在生長之後視情況在200℃與800℃之間退火。
在某些實施例中,在圖1中生長之結構附接至如在圖2中所圖解說明之一處置晶圓20。處置晶圓20在生長基板11之移除期間機械地支撐半導體結構13。處置晶圓20可係(舉例而言)藍寶石、矽或任何其他適合材料。在某些實施例
中,(舉例而言)藉由在熱及壓力下一起按壓處置晶圓20及半導體結構13或藉由陽極接合(其中在熱及一靜電場下一起按壓處置晶圓20及半導體結構13)而將處置晶圓20直接接合至半導體結構13。在某些實施例中,藉由一或多個接合層18將處置晶圓20接合至半導體結構13。一接合層可僅形成在處置晶圓20上、僅在半導體結構13上或在處置晶圓20及半導體結構13兩者上。接合層可係任何適合材料,諸如(舉例而言)矽之一或多種氧化物。在形成接合層之後,在熱及壓力下或在熱及一靜電場下一起按壓處置晶圓20及半導體結構13。在附接處置晶圓20之後,藉由包含(舉例而言)雷射剝離、蝕刻或機械技術之適合於生長基板材料之任何技術來移除生長基板11。
在圖3中所圖解說明之結構中,在此實例中已自圖2之結構移除生長基板,曝露第一生長層、n型區12。一選用光阻抗匹配層22可形成在n型區12上。光阻抗匹配層22增強自半導體結構之提取而不要求半導體結構之表面之粗糙化。光阻抗匹配層22可係(舉例而言)藉由包含蒸鍍及濺鍍之任何適合技術而形成之一防反射堆疊。在某些實施例中,將n型區12粗糙化。在其中將n型區12粗糙化之實施例中,使用一順應性接合層23,其流動填充在經粗糙化之表面中之間隙以使得可形成完全無空隙之一接合。
一或多個接合層23形成在選用光阻抗匹配層22(若存在)上或在n型區12上。接合層23通常係高折射率(舉例而言,在某些實施例中至少1.5)、低光學吸收層。接合層23可形
成在光阻抗匹配層22(或若不存在層22則在半導體結構13)上、在基板24上或在兩者上。用於接合層23之適合材料之實例包含:III族至V族半導體,其包含但不限於砷化鎵、氮化鎵、磷化鎵、及磷化鎵銦;II族至VI族半導體,其包含但不限於硒化鎘、硫化鎘、碲化鎘、硫化鋅、硒化鋅及碲化鋅;IV族半導體及化合物,其包含但不限於鍺、矽及碳化矽;有機半導體、氧化物、金屬氧化物及稀土氧化物,其包含但不限於鋁、銻、砷、鉍、硼、鎘、鈰、鉻、鈷、銅、鎵、鍺、銦、銦錫、鉛、鋰、鉬、釹、鎳、鈮、磷、鉀、矽、鈉、碲、鉈、鈦、鎢、鋅或鋯之氧化物或氮化物;鹵氧化物,諸如氯氧化鉍;氟化物、氯化物及溴化物,其包含但不限於鈣、鉛、鎂、鉀、鈉及鋅之氟化物、氯化物及溴化物;金屬,其包含但不限於銦、鎂、錫及鋅;鐿鋁石榴石(「YAG」)、磷化物化合物、砷化物化合物、銻化物化合物、氮化物化合物、高指數有機化合物;及其混合物或合金。可藉由包含蒸鍍、濺鍍、化學汽相沈積、分配、印刷、噴塗、旋塗或刮塗之任何適合方法施加一或多個接合層23。一高指數接合材料可以流體形式沈積,且可保持流體直至連接之時刻,或可在連接之時刻部分地固化或凝膠,或可係在加熱之後旋即增黏以達成簡單連接之一固體。高指數接合材料可反應以形成可介於自一凝膠狀態至一硬樹脂之間的範圍內之一固化接合。
將半導體結構經由接合層23接合至一基板24。基板24可係一透明、高折射率材料,諸如預形成為一基板晶圓然後
接合至半導體結構13之玻璃。上述玻璃之折射率在某些實施例中可係在1.5至2.2或更高之範圍內,與GaN之折射率(2.4)緊密匹配。用於基板24之適合材料包含但不限於電絕緣材料、非半導體材料、熔結玻璃、適合的高折射率玻璃,諸如氯化鉛、溴化鉛、氟化鉀、氟化鋅、鋁、銻、鉍、硼、鉛、鋰、磷、鉀、矽、鈉、碲、鉈、鎢或鋅之氧化物或其任何混合物。舉例而言,高折射率玻璃亦包含以下材料:諸如Schott玻璃LaSFN35、LaF10、NZK7、NLAF21、LaSFN18、SF59或LaSF3,或Ohara玻璃SLAH51或SLAM60,或其混合物,諸如(Ge、As、Sb、Ga)(S、Se、Te、F、Cl、I、Br)硫屬化物及硫屬鹵化物玻璃之玻璃。在某些實施例中,基板24可包含或由諸如玻璃、氟化鎂及聚合物之較低指數材料形成。諸如聚矽氧或矽氧烷之高指數及低指數樹脂兩者可自諸如Shin-Etsu Chemical Co.,Ltd.(日本,東京)之製造商獲得。可修改矽氧烷主鏈之側鏈以改變聚矽氧之折射率。
實質上無傳統的基於有機物之黏合劑(諸如環氧樹脂)之玻璃往往具有較高折射率,此乃因有機黏合劑往往具有低折射率。此等基於有機物之黏合劑亦往往在短波長光與高溫之一組合下降級,將LED之最大操作溫度限制至~150℃。因此,在某些實施例中,基板24係一無有機物材料,該材料可允許LED之較高效操作,及/或在較高溫度處之操作。
在某些實施例中,基板24係上述材料中之任一者之一矩
陣,其中併入有將由發光區發射之波長光轉換至其他波長之一或多個發光材料。可藉由波長轉換材料轉換由發光區發射且入射在波長轉換材料上之光之全部或僅一部分。由發光區發射之未經轉換之光可係光之最終光譜之部分,但亦無需如此。常見組合之實例包含一發藍色光LED與一發黃色光之波長轉換材料組合、一發藍色光LED與發綠色光及發紅色光之波長轉換材料組合、一發UV光LED與發藍色光及發黃色光之波長轉換材料組合及一發UV光LED與發藍色光、發綠色光及發紅色光之波長轉換材料組合。可添加發射其他色彩之光之波長轉換材料以裁整自該裝置發射之光之光譜。波長轉換材料可係習用磷光體顆粒、有機半導體、II族至VI族或III族至V族半導體、II族至VI族或III族至V族半導體量子點或奈米結晶、染料、聚合物或諸如發光之GaN之材料。若基板24包含習用磷光體顆粒,則在某些實施例中基板24足夠厚以容納通常具有大約5微米至大約50微米之一大小之顆粒。可使用包含以下各項之任何適合磷光體:基於石榴石之磷光體,諸如Y3Al5O12:Ce(YAG)、Lu3Al5O12:Ce(LuAG)、Y3Al5-xGaxO12:Ce(YAlGaG)、(Ba1-xSrx)SiO3:Eu(BOSE),及基於氮化物之磷光體,諸如(Ca,Sr)AlSiN3:Eu及(Ca,Sr,Ba)2Si5N8:Eu。
在某些實施例中,基板24係一陶瓷,該陶瓷可係波長轉換的。一陶瓷基板24可藉由(舉例而言)燒結磷光體顆粒(諸如上文列舉之磷光體中之任一者)或燒結其他材料(諸如Al2O3、ZrO2、SiC、AlON、SiON、AlSiON、諸如鈦酸
鋇、鈦酸鈣、鈦酸鍶、鋯鈦酸鉛或未活化之YAG之鈦酸鹽類)而形成。一陶瓷基板24可係透明、半透明或散射的。
在某些實施例中,藉由在高溫處一起按壓兩種結構而將半導體結構13接合至基板24。舉例而言,在某些實施例中接合溫度可高達800℃,在某些實施例中大於400℃,在某些實施例中大於500℃,且在某些實施例中在500℃與800℃之間。在某些實施例中,亦可在接合時施加小於90 kN之壓力。在某些實施例中,亦可在半導體結構13與基板24之間施加一電位差。
如在圖4中所圖解說明,在接合至基板24之後,(舉例而言)藉由蝕刻、機械分離、雷射剝離或任何其他適合技術而移除處置晶圓20。(舉例而言)藉由蝕刻來移除在移除處置晶圓20之後剩餘之任何接合材料18。在圖4中所圖解說明之結構中,將半導體結構透過n型區12之表面接合至基板24。曝露p型區16之頂表面。
作為對在圖2、圖3及圖4中所圖解說明之製程之一替代,可將圖1之結構處理成在圖5中圖解說明之結構。在圖5中所圖解說明之結構中,一選用光阻抗匹配層22形成在圖1中所圖解說明之半導體結構之p型區16之頂表面上。形成一或多個接合層23,然後如上文參考圖3所闡述將半導體結構接合至基板24。然後如上文所闡述移除生長基板11。在圖5中所圖解說明之結構中,將半導體結構13經由p型區16接合至基板24。曝露n型區12之頂表面。
圖6圖解說明在形成電連接至n型區及p型區之金屬觸點
之後的圖4之結構。首先形成p觸點33。所圖解說明之p觸點33包含兩個金屬層32及34。金屬32可藉由(舉例而言)蒸鍍或濺鍍而沈積,然後藉由包含(舉例而言)蝕刻或剝離之標準光微影操作而圖案化。金屬32可係與諸如(舉例而言)銀之p型III族氮化物材料形成一歐姆接觸之一反射性金屬。金屬32亦可係一過渡金屬及銀之一多層堆疊。舉例而言,該過渡金屬可係鎳。金屬32在某些實施例中在100 Å與2000 Å之間厚,在某些實施例中在500 Å與1700 Å之間厚,且在某些實施例中在1000 Å與1600 Å之間。可視情況在金屬32之沈積之後對該結構進行退火。
一選用第二p觸點金屬34可藉由(舉例而言)蒸鍍或濺鍍而沈積在p觸點金屬32上方,然後藉由諸如(舉例而言)蝕刻或剝離之標準光微影操作而圖案化。金屬34可係最低限度地與銀反應之任何導電材料,諸如鈦與鎢之一合金。此合金可部分地、完全地或根本不氮化。另一選擇係,金屬34可係鉻、鉑或矽,或可係經最佳化用於黏合至周圍層及用於阻擋金屬32之擴散之上述材料中之任一者之一多層堆疊。金屬34在某些實施例中可在1000 Å與10000 Å之間厚,在某些實施例中在2000 Å與8000 Å之間,且在某些實施例中在2000 Å與7000 Å之間厚。
然後藉由標準光微影操作將該結構圖案化,且藉由(舉例而言)其中使用化學反應性電漿來移除半導體材料之反應性離子蝕刻(RIE)或其中藉由一RF供電之磁場來產生電漿之一RIE程序之感應耦合式電漿(ICP)蝕刻來蝕刻該結
構。在某些實施例中,藉由用於圖案化p觸點金屬34之光微影遮罩來判定圖案。在此等實施例中,可在一單個操作中在蝕刻p觸點金屬34之後即執行蝕刻。在某些區中,移除p型區16之整個厚度及發光區14之整個厚度,顯露n型區12之一表面。
一金屬n觸點36形成在藉由蝕刻掉p型區及發光區而曝露之n型區12之一部分上。n觸點36可係包含鋁之任一適合金屬,或包含鋁、鈦鎢合金、銅及金之一多層金屬堆疊。在其中n觸點36係一多層堆疊之實施例中,第一金屬(亦即,毗鄰於n型區12之金屬)可經選擇以形成與GaN之一歐姆接觸且反射藍色光及白色光。舉例而言,此一第一層可係鋁。可藉由包含(舉例而言)濺鍍、蒸鍍、電鍍或此等製程之一組合之任何適合製程來沈積n觸點36。
舉例而言,可藉由電漿增強型化學汽相沈積(PECVD)、化學汽相沈積(CVD)或蒸鍍而將一介電質38沈積在該結構上方。介電質38電隔離n觸點36與p觸點33。介電質38藉由標準光微影操作而圖案化且藉由ICP蝕刻或RIE而蝕刻以曝露n觸點36及p觸點33。介電質38可係包含氮化矽、氧化矽及氮氧化矽之任何適合介電質。在某些實施例中,介電質38係一反射堆疊。介電質38可在n觸點36之形成之前或之後形成。
接合墊40a及40b可在n觸點及p觸點及介電質38上方形成,以將n觸點及p觸點再分配成適合用於接合至諸如(舉例而言)一PC板之另一結構之大導電墊。接合墊通常係金
屬,但亦可係任何適合的導電材料。接合墊40a透過p觸點33電連接至p型區16。接合墊40b透過n觸點36電連接至n型區12。接合墊40可係(舉例而言)Cu或包括(舉例而言)藉由濺鍍或藉由濺鍍及電鍍之一組合而沈積之Ti、TiW、Cu、Ni及Au之多層金屬堆疊。接合墊40a及40b可如在圖6及圖7中所圖解說明以一間隙電隔離,或藉由諸如上文參考介電質38所闡述之材料之一固態介電質電隔離。
圖7圖解說明在形成電連接至n型區及p型區之金屬觸點之後的圖5之結構。圖7係圖6之反轉-可首先形成一n觸點36,然後蝕刻掉n型區12及發光區14之一部分以顯露p型區16,然後在p型區16之曝露部分上形成一p觸點33。n觸點36與p觸點33藉由介電質38電隔離。接合墊40a及40b分別電連接至p觸點33及n觸點36。n觸點金屬36及p觸點金屬33、介電質38及接合墊40可係以與上文參考圖6所闡述之相同方式形成之相同材料。
雖然在圖6及圖7之每一者中僅圖解說明一個裝置,但應理解上文所圖解說明及闡述之處理步驟通常發生在包含多個裝置之一晶圓上。在某些實施例中,n觸點及/或p觸點可經分配以使得蝕刻在圖6中之多個n觸點開口及在圖7中之多個p觸點開口。在圖8、圖9、圖10、圖11及圖12中,圖解說明多個裝置,該多個裝置可係在圖6中所圖解說明之裝置或在圖7中所圖解說明之裝置。在圖8、圖9、圖10、圖11及圖12中,半導體結構13可如在圖6中所圖解說明使得p型區16在頂部或如在圖7中所圖解說明使得n型區
12在頂部。類似地,在圖8、圖9、圖10、圖11及圖12中展示為結構31之金屬觸點33及36及介電質38可以在圖6中所圖解說明之組態或在圖7中所圖解說明之組態形成。
在晶圓上之個別裝置完成之後,可測試該全晶圓。在其中基板24係波長轉換的之實施例中,可在圖8中所圖解說明之選用步驟中調諧每一LED之色彩。圖8之結構包含一晶圓之一部分,該晶圓包含半導體結構13。圖解說明三個裝置42、44及46。基於測試結果,可藉由基於測試結果而修改所存在之每裝置的波長轉換材料之數量來進一步調諧在晶圓上之每一個別LED晶粒之色彩。若在全晶圓測試時裝置並未產生所期望之波長光譜,則(例如)藉由局部地(裝置42及46)沈積額外波長轉換材料或藉由透過剝蝕、蝕刻或溶解而局部地(裝置44)移除某些波長轉換材料來更改波長轉換基板24之厚度。若需要,則可能數次測試及再調整波長轉換材料厚度直至產生光之所期望波長光譜。光轉換層之厚度係回應於由LED產生之光而控制,從而導致一高度可再現色彩。此外,由於光轉換層之厚度回應於由LED產生之特定波長而更改,因此可容納跨越該晶圓在由LED產生之光波長中之一變化。因此,可拒絕產生具有一非所期望之波長光譜之光的較少LED。
在圖9中,藉由粗糙化或圖案化來視情況紋理化和與一或多個接合層23接觸之表面相對之基板24之表面48,此可改良光提取。紋理化可藉由包含(舉例而言)蝕刻、雷射剝蝕之任何適合技術或藉由將另一結構層壓至諸如一光柵或
諸如一菲涅耳透鏡(Fresnel lens)之一透鏡之基板24上來執行。
在圖10中,一保護性剝離聚合物層52沈積在晶圓之頂部上,然後裝置之晶圓經單粒化成裝置晶片。每一裝置晶片可包含一單個發光二極體或一發光二極體群組。如圖10、圖11及圖12中所圖解說明,由於將半導體結構13及基板24一起分割,因此基板不比裝置寬。可(舉例而言)藉由習用鋸割、藉由使用193 nm、248 nm或355 nm光之雷射剝蝕或藉由噴水式切割來執行單粒化。亦可經由劃線及機械斷裂之一組合來執行單粒化,劃線係(舉例而言)藉由習用鋸割、藉由使用193 nm、248 nm或355 nm光之雷射剝蝕或藉由噴水式切割來執行。
在圖11中,一選用反射塗層形成在裝置之頂部56及側面54上方。舉例而言,該反射塗層形成在保護性剝離聚合物層52上方及在聚合物層52、接合墊40a及40b、結構31、半導體結構13、接合層23及基板24之側面上。該塗層可係(舉例而言)藉由包含蒸鍍之任何適合技術形成之一高反射介電質堆疊。側面塗層54減少或消除光自每一裝置之側面之洩漏。在移除保護性剝離聚合物層52以曝露接合墊40時,在圖12中移除在裝置之頂部56上之塗層。現在該裝置可藉由焊接而附接至任何適合結構,舉例而言至一PC板。
雖然上述之實例圖解說明覆晶裝置,但可能使用其他裝置幾何型態,包含具有透明觸點之裝置(其中透過該等觸點自裝置提取光)及具有頂部及底部觸點之垂直裝置。在
一垂直裝置中,可移除或不形成基板24之一部分以容納(舉例而言)具有一金屬填充導通體之一觸點。另一選擇係,在垂直裝置中之一觸點可在一導電基板24上形成。在上文所圖解說明之實例中,可將大部分光朝向基板24引導出半導體結構。在某些實施例中,諸如具有透明觸點之一裝置或一垂直裝置,可將大部分光朝向與基板24相對之半導體結構之一表面引導出半導體結構。在此等實施例中,可使用諸如一反射金屬之一反射接合層,且基板24可係透明或不透明的。亦可將一金屬接合層用作一觸點。
本發明之實施例可提供優於習用處理之優勢。在圖6及圖7中所圖解說明之處理(亦即,金屬觸點及介電質層之形成)之前,可在高達~800℃之溫度處處理半導體結構13。由於在圖6及圖7中所圖解說明之處理之前將半導體結構13接合至基板24,因此基板24可由一高熔點、高折射率材料製成。高熔點、高折射率玻璃通常比較低熔點高折射率玻璃具有較低光學吸收性。具有較低光學吸收性之一基板24之使用可改良裝置之效能。此外,高溫軟化點玻璃通常具有較低熱膨脹係數(CTE),其比較低熔點玻璃之CTE更好地匹配一III族氮化物半導體結構13之CTE。所產生之結構可因此具有減少之內置應力,因此儘管有藉以將半導體結構13接合至基板24之高溫,但此仍可減少結構在溫度循環期間由於應力所致的破裂或分層之趨勢。
在已詳細闡述本發明後,熟習此項技術者應瞭解,在給出本發明揭示內容之情況下,可對本發明作出修改而不背
離在本文中所闡述之發明概念之精神。因此,並非意欲將本發明之範疇限制至所圖解說明及所闡述之特定實施例。
11‧‧‧生長基板/基板
12‧‧‧n型區
13‧‧‧半導體結構/III族氮化物半導體結構
14‧‧‧發光區或作用區/發光區
16‧‧‧p型區
18‧‧‧接合層/接合材料
20‧‧‧處置晶圓
22‧‧‧選用光阻抗匹配層/光阻抗匹配層/層
23‧‧‧順應性接合層/接合層
24‧‧‧波長轉換基板/基板/陶瓷基板/導電基板
31‧‧‧結構
32‧‧‧金屬層/金屬
33‧‧‧金屬觸點/p觸點金屬/p觸點
34‧‧‧金屬層/金屬/p觸點金屬/選用第二p觸點金屬
36‧‧‧金屬n觸點/n觸點/n觸點金屬/金屬觸點
38‧‧‧介電質
40‧‧‧接合墊
40a‧‧‧接合墊
40b‧‧‧接合墊
42‧‧‧裝置
44‧‧‧裝置
46‧‧‧裝置
48‧‧‧表面
52‧‧‧保護性剝離聚合物層/聚合物層
54‧‧‧側面/側面塗層
56‧‧‧裝置之頂部
圖1圖解說明包含在一生長基板上生長之一n型區、一發光區及一p型區之一半導體結構。
圖2圖解說明接合至一處置晶圓之圖1之結構。
圖3圖解說明在移除生長基板且接合至一第二基板之後的圖2之結構。
圖4圖解說明在移除處置晶圓之後的圖3之結構。
圖5圖解說明在接合至一第二基板且移除生長基板之後的圖1之結構。
圖6圖解說明在形成一金屬p觸點、蝕刻一臺面及形成一金屬n觸點之後的在圖4中圖解說明之結構之一部分。
圖7圖解說明在形成一金屬n觸點、蝕刻一臺面及形成一金屬p觸點之後的在圖5中所圖解說明之結構之一部分。
圖8圖解說明在調整基板中之波長轉換材料之數量之後的裝置之一晶圓之一部分。
圖9圖解說明在紋理化基板之後的裝置之一晶圓之一部分。
圖10圖解說明在單粒化裝置之一晶圓之後的三個裝置。
圖11圖解說明在形成一介電質塗層之後的三個裝置。
圖12圖解說明在移除過量介電質塗層之後的三個裝置。
圖13圖解說明用於形成一經磷光體轉換LED之一先前技術方法。
12‧‧‧n型區
13‧‧‧半導體結構/III族氮化物半導體結構
14‧‧‧發光或作用區/發光區
16‧‧‧p型區
22‧‧‧選用光阻抗匹配層/光阻抗匹配層/層
23‧‧‧順應性接合層/接合層
24‧‧‧波長轉換基板/基板/陶瓷基板/導電基板
Claims (18)
- 一種處理一半導體結構之方法,其包括:提供包括在一生長基板上生長之一半導體結構之一晶圓,該半導體結構包括夾在一n型區與一p型區之間的一III族氮化物發光層;將該晶圓接合至一第二基板,其中該第二基板係透明的且包括安置在玻璃中之一波長轉換材料,其中該第二基板具有大於1.5之一折射率;移除該生長基板;及在將該晶圓接合至該第二基板之後,將該晶圓處理成多個發光裝置。
- 如請求項1之方法,其中具有大於1.5之一折射率之該第二基板包括玻璃。
- 如請求項1之方法,其進一步包括:在將該晶圓處理成多個發光裝置之後測試該晶圓;及根據該測試之結果來調整對應於每一發光裝置之波長轉換材料之數量。
- 如請求項3之方法,其中調整包括:藉由雷射剝蝕來移除波長轉換材料。
- 如請求項3之方法,其中調整包括:添加波長轉換材料。
- 如請求項1之方法,其中將該晶圓接合至一第二基板包括:在大於500℃之一溫度處一起按壓該晶圓及該第二基板。
- 如請求項1之方法,其中將該晶圓處理成多個發光裝置包括:在該p型區上形成一金屬觸點;移除該發光層及該p型區之一部分以顯露該n型區之一部分;及在藉由移除該發光層及該p型區之一部分而曝露之該n型區上形成一金屬觸點。
- 如請求項1之方法,其中將該晶圓處理成多個發光裝置包括:將該晶圓分割成單個發光二極體或發光二極體群組。
- 如請求項8之方法,其進一步包括在分割該晶圓之後在每一單個發光二極體或每一發光二極體群組之側面上形成一反射塗層。
- 如請求項1之方法,其進一步包括在接合之前在該半導體結構上形成一光阻抗匹配層。
- 如請求項1之方法,其進一步包括在該半導體結構及該第二基板中之一者上形成一接合層。
- 如請求項1之方法,其進一步包括紋理化與接合至該半導體結構之一表面相對之該第二基板之一表面。
- 如請求項1之方法,其中將該晶圓處理成多個發光裝置發生在移除該生長基板之後。
- 如請求項1之方法,其進一步包括在移除該生長基板之前將該晶圓接合至一處置晶圓,其中將該晶圓接合至一第二基板發生在移除該生長基板同時將該半導體結構接 合至該處置晶圓之後。
- 如請求項14之方法,其進一步包括在將該晶圓接合至一第二基板之後移除該處置晶圓。
- 如請求項1之方法,其進一步包括在與接合至該第二基板之一表面相對之該半導體結構之一表面上形成一反射觸點。
- 一種處理一半導體結構之方法,其包括:提供包括在一生長基板上生長之一半導體結構之一晶圓,該半導體結構包括夾在一n型區與一p型區之間的一發光層;將該晶圓接合至包括安置在玻璃中之一波長轉換材料之一基板,其中該基板具有大於1.5之一折射率;移除該生長基板;及在將該晶圓接合至該玻璃基板之後,將該晶圓處理成多個發光裝置。
- 如請求項17之方法,其中將一波長轉換材料安置在該玻璃基板中。
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