JP2016179942A5 - - Google Patents
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- Publication number
- JP2016179942A5 JP2016179942A5 JP2016141548A JP2016141548A JP2016179942A5 JP 2016179942 A5 JP2016179942 A5 JP 2016179942A5 JP 2016141548 A JP2016141548 A JP 2016141548A JP 2016141548 A JP2016141548 A JP 2016141548A JP 2016179942 A5 JP2016179942 A5 JP 2016179942A5
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- solution
- temperature
- growth step
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 58
- 238000004519 manufacturing process Methods 0.000 claims description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 claims 2
- 230000008025 crystallization Effects 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014014102 | 2014-01-29 | ||
| JP2014014102 | 2014-01-29 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015525338A Division JP6014258B2 (ja) | 2014-01-29 | 2015-01-29 | 結晶の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016179942A JP2016179942A (ja) | 2016-10-13 |
| JP2016179942A5 true JP2016179942A5 (enExample) | 2016-12-01 |
| JP6231622B2 JP6231622B2 (ja) | 2017-11-15 |
Family
ID=53757113
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015525338A Active JP6014258B2 (ja) | 2014-01-29 | 2015-01-29 | 結晶の製造方法 |
| JP2016141548A Active JP6231622B2 (ja) | 2014-01-29 | 2016-07-19 | 結晶の製造方法 |
| JP2016185984A Active JP6267303B2 (ja) | 2014-01-29 | 2016-09-23 | 結晶の製造方法 |
| JP2017244801A Pending JP2018043930A (ja) | 2014-01-29 | 2017-12-21 | 結晶の製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015525338A Active JP6014258B2 (ja) | 2014-01-29 | 2015-01-29 | 結晶の製造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016185984A Active JP6267303B2 (ja) | 2014-01-29 | 2016-09-23 | 結晶の製造方法 |
| JP2017244801A Pending JP2018043930A (ja) | 2014-01-29 | 2017-12-21 | 結晶の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10443149B2 (enExample) |
| JP (4) | JP6014258B2 (enExample) |
| WO (1) | WO2015115543A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10573093B2 (en) | 1995-06-07 | 2020-02-25 | Automotive Technologies International, Inc. | Vehicle computer design and use techniques for receiving navigation software |
| US10358057B2 (en) | 1997-10-22 | 2019-07-23 | American Vehicular Sciences Llc | In-vehicle signage techniques |
| US9177476B2 (en) | 1997-10-22 | 2015-11-03 | American Vehicular Sciences Llc | Method and system for guiding a person to a location |
| US10240935B2 (en) | 1998-10-22 | 2019-03-26 | American Vehicular Sciences Llc | Vehicle software upgrade techniques |
| KR102092231B1 (ko) * | 2015-10-26 | 2020-03-23 | 주식회사 엘지화학 | 실리콘계 용융 조성물 및 이를 이용한 SiC 단결정의 제조 방법 |
| KR102061781B1 (ko) * | 2015-10-26 | 2020-01-02 | 주식회사 엘지화학 | 실리콘계 용융 조성물 및 이를 이용한 SiC 단결정의 제조 방법 |
| CN115787065A (zh) * | 2021-09-10 | 2023-03-14 | 日立金属株式会社 | 单晶制造方法、单晶制造装置和坩埚 |
| WO2025175274A1 (en) * | 2024-02-16 | 2025-08-21 | Vladimir Mancevski | Joule heating of a mixed powder |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3053635A (en) * | 1960-09-26 | 1962-09-11 | Clevite Corp | Method of growing silicon carbide crystals |
| US3353914A (en) * | 1964-12-30 | 1967-11-21 | Martin Marietta Corp | Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof |
| JPH07172998A (ja) | 1993-12-21 | 1995-07-11 | Toshiba Corp | 炭化ケイ素単結晶の製造方法 |
| JP4100228B2 (ja) * | 2002-04-15 | 2008-06-11 | 住友金属工業株式会社 | 炭化珪素単結晶とその製造方法 |
| US7520930B2 (en) * | 2002-04-15 | 2009-04-21 | Sumitomo Metal Industries, Ltd. | Silicon carbide single crystal and a method for its production |
| DE60324409D1 (de) * | 2002-04-15 | 2008-12-11 | Sumitomo Metal Ind | Verfahren zur herstellung eines siliciumcarbid-einkristalles |
| JP4419937B2 (ja) * | 2005-09-16 | 2010-02-24 | 住友金属工業株式会社 | 炭化珪素単結晶の製造方法 |
| JP4853449B2 (ja) * | 2007-10-11 | 2012-01-11 | 住友金属工業株式会社 | ＳｉＣ単結晶の製造方法、ＳｉＣ単結晶ウエハ及びＳｉＣ半導体デバイス |
| JP5071406B2 (ja) | 2009-02-13 | 2012-11-14 | トヨタ自動車株式会社 | 溶液法によるＳｉＣ単結晶成長用種結晶の複合接着方法 |
| DE112009005154B4 (de) * | 2009-07-17 | 2016-07-14 | Toyota Jidosha Kabushiki Kaisha | Verfahren zum Erzeugen eines SiC-Einkristalls |
| KR101666596B1 (ko) * | 2009-09-29 | 2016-10-14 | 후지 덴키 가부시키가이샤 | ＳｉＣ 단결정 및 그 제조 방법 |
| BR112012018814A2 (pt) * | 2010-01-27 | 2016-04-12 | Afl Telecommunications Llc | cabo de registro |
| JP5434801B2 (ja) | 2010-06-03 | 2014-03-05 | トヨタ自動車株式会社 | ＳｉＣ単結晶の製造方法 |
| KR101690490B1 (ko) * | 2010-10-21 | 2016-12-28 | 에스케이이노베이션 주식회사 | 탄화규소 단결정의 제조방법 및 장치 |
| JP5273130B2 (ja) * | 2010-11-26 | 2013-08-28 | 信越化学工業株式会社 | ＳｉＣ単結晶の製造方法 |
| JP5478528B2 (ja) * | 2011-02-09 | 2014-04-23 | トヨタ自動車株式会社 | 溶液法によるＳｉＣ単結晶の製造方法 |
| US8838284B2 (en) * | 2011-07-26 | 2014-09-16 | General Electric Company | Devices and methods for decentralized Volt/VAR control |
| JP5803519B2 (ja) | 2011-09-29 | 2015-11-04 | トヨタ自動車株式会社 | ＳｉＣ単結晶の製造方法及び製造装置 |
| JP5318300B1 (ja) * | 2011-10-28 | 2013-10-16 | 京セラ株式会社 | 結晶の製造方法 |
-
2015
- 2015-01-29 JP JP2015525338A patent/JP6014258B2/ja active Active
- 2015-01-29 WO PCT/JP2015/052520 patent/WO2015115543A1/ja not_active Ceased
- 2015-01-29 US US15/114,751 patent/US10443149B2/en active Active
-
2016
- 2016-07-19 JP JP2016141548A patent/JP6231622B2/ja active Active
- 2016-09-23 JP JP2016185984A patent/JP6267303B2/ja active Active
-
2017
- 2017-12-21 JP JP2017244801A patent/JP2018043930A/ja active Pending
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