DE60324409D1 - Verfahren zur herstellung eines siliciumcarbid-einkristalles - Google Patents

Verfahren zur herstellung eines siliciumcarbid-einkristalles

Info

Publication number
DE60324409D1
DE60324409D1 DE60324409T DE60324409T DE60324409D1 DE 60324409 D1 DE60324409 D1 DE 60324409D1 DE 60324409 T DE60324409 T DE 60324409T DE 60324409 T DE60324409 T DE 60324409T DE 60324409 D1 DE60324409 D1 DE 60324409D1
Authority
DE
Germany
Prior art keywords
preparing
silicon carbide
carbide crystal
crystal
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60324409T
Other languages
English (en)
Inventor
Kazuhiko Kusunoki
Shinji Munetoh
Kazuhito Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Application granted granted Critical
Publication of DE60324409D1 publication Critical patent/DE60324409D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
DE60324409T 2002-04-15 2003-04-10 Verfahren zur herstellung eines siliciumcarbid-einkristalles Expired - Lifetime DE60324409D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002112382 2002-04-15
PCT/JP2003/004551 WO2003087440A1 (fr) 2002-04-15 2003-04-10 Monocristal de carbure de silicium et procede de fabrication correspondant

Publications (1)

Publication Number Publication Date
DE60324409D1 true DE60324409D1 (de) 2008-12-11

Family

ID=29243317

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60324409T Expired - Lifetime DE60324409D1 (de) 2002-04-15 2003-04-10 Verfahren zur herstellung eines siliciumcarbid-einkristalles

Country Status (3)

Country Link
EP (1) EP1498518B1 (de)
DE (1) DE60324409D1 (de)
WO (1) WO2003087440A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1806437B1 (de) * 2004-09-03 2016-08-17 Nippon Steel & Sumitomo Metal Corporation Verfahren zur herstellung von siliciumcarbid-einkristall
JP4811354B2 (ja) * 2007-06-11 2011-11-09 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
EP2484815B1 (de) * 2009-09-29 2014-12-24 Fuji Electric Co., Ltd. VERFAHREN ZUR HERSTELLUNG EINES SiC-EINKRISTALLES
JP5355533B2 (ja) * 2010-11-09 2013-11-27 新日鐵住金株式会社 ｎ型ＳｉＣ単結晶の製造方法
EP2775015B1 (de) * 2011-10-31 2017-06-21 Toyota Jidosha Kabushiki Kaisha Herstellungsverfahren für einen sic-einkristall
US10443149B2 (en) * 2014-01-29 2019-10-15 Kyocera Corporation Method of producing crystal
CN115478324A (zh) * 2022-08-31 2022-12-16 昆明理工大学 一种助溶剂法生长单晶或多晶SiC晶体的方法
CN117385467B (zh) * 2023-12-12 2024-02-13 乾晶半导体(衢州)有限公司 一种制备碳化硅晶体的方法及碳化硅晶体

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58156597A (ja) * 1982-03-11 1983-09-17 Toshiba Corp 炭化珪素結晶の成長装置
EP0967304B1 (de) * 1998-05-29 2004-04-07 Denso Corporation Verfahren zur Herstellung eines Siliziumkarbid-Einkristalls
JP2000264790A (ja) * 1999-03-17 2000-09-26 Hitachi Ltd 炭化珪素単結晶の製造方法
EP1130137B1 (de) * 1999-07-30 2006-03-08 Nissin Electric Co., Ltd. Material zum ziehen von sic-einkristallen und verfahren zur herstellung von sic-einkristallen
JP4304783B2 (ja) * 1999-09-06 2009-07-29 住友電気工業株式会社 ＳｉＣ単結晶およびその成長方法
JP2001106600A (ja) * 1999-10-12 2001-04-17 Mitsubishi Cable Ind Ltd 炭化硅素結晶の液相成長方法

Also Published As

Publication number Publication date
EP1498518A1 (de) 2005-01-19
EP1498518B1 (de) 2008-10-29
WO2003087440A1 (fr) 2003-10-23
EP1498518A4 (de) 2006-08-02

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