JP2016174162A5 - - Google Patents
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- Publication number
- JP2016174162A5 JP2016174162A5 JP2016082779A JP2016082779A JP2016174162A5 JP 2016174162 A5 JP2016174162 A5 JP 2016174162A5 JP 2016082779 A JP2016082779 A JP 2016082779A JP 2016082779 A JP2016082779 A JP 2016082779A JP 2016174162 A5 JP2016174162 A5 JP 2016174162A5
- Authority
- JP
- Japan
- Prior art keywords
- main surface
- silicon carbide
- carbide substrate
- atoms
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 12
- 229910010271 silicon carbide Inorganic materials 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 4
- 229910052804 chromium Inorganic materials 0.000 claims 4
- 239000011651 chromium Substances 0.000 claims 4
- 229910052750 molybdenum Inorganic materials 0.000 claims 4
- 239000011733 molybdenum Substances 0.000 claims 4
- 229910052759 nickel Inorganic materials 0.000 claims 4
- 229910052697 platinum Inorganic materials 0.000 claims 4
- 229910052719 titanium Inorganic materials 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 4
- 229910052721 tungsten Inorganic materials 0.000 claims 4
- 239000010937 tungsten Substances 0.000 claims 4
- 229910052720 vanadium Inorganic materials 0.000 claims 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 4
- 229910052726 zirconium Inorganic materials 0.000 claims 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052791 calcium Inorganic materials 0.000 claims 3
- 239000011575 calcium Substances 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 239000010949 copper Substances 0.000 claims 3
- 229910052742 iron Inorganic materials 0.000 claims 3
- 239000011591 potassium Substances 0.000 claims 3
- 229910052700 potassium Inorganic materials 0.000 claims 3
- 229910052708 sodium Inorganic materials 0.000 claims 3
- 239000011734 sodium Substances 0.000 claims 3
- 230000003746 surface roughness Effects 0.000 claims 3
- 229910052718 tin Inorganic materials 0.000 claims 3
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014216483 | 2014-10-23 | ||
| JP2014216483 | 2014-10-23 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015562220A Division JP5924462B1 (ja) | 2014-10-23 | 2015-08-31 | 炭化珪素基板の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019225374A Division JP6849049B2 (ja) | 2014-10-23 | 2019-12-13 | 炭化珪素基板およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016174162A JP2016174162A (ja) | 2016-09-29 |
| JP2016174162A5 true JP2016174162A5 (enrdf_load_stackoverflow) | 2018-08-30 |
| JP6634942B2 JP6634942B2 (ja) | 2020-01-22 |
Family
ID=55760678
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015562220A Active JP5924462B1 (ja) | 2014-10-23 | 2015-08-31 | 炭化珪素基板の製造方法 |
| JP2016082779A Active JP6634942B2 (ja) | 2014-10-23 | 2016-04-18 | 炭化珪素基板およびその製造方法 |
| JP2019225374A Active JP6849049B2 (ja) | 2014-10-23 | 2019-12-13 | 炭化珪素基板およびその製造方法 |
| JP2021033379A Active JP7095765B2 (ja) | 2014-10-23 | 2021-03-03 | 炭化珪素基板およびその製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015562220A Active JP5924462B1 (ja) | 2014-10-23 | 2015-08-31 | 炭化珪素基板の製造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019225374A Active JP6849049B2 (ja) | 2014-10-23 | 2019-12-13 | 炭化珪素基板およびその製造方法 |
| JP2021033379A Active JP7095765B2 (ja) | 2014-10-23 | 2021-03-03 | 炭化珪素基板およびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10113249B2 (enrdf_load_stackoverflow) |
| JP (4) | JP5924462B1 (enrdf_load_stackoverflow) |
| CN (2) | CN106796877B (enrdf_load_stackoverflow) |
| DE (1) | DE112015004795T5 (enrdf_load_stackoverflow) |
| WO (1) | WO2016063632A1 (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112015002906B4 (de) * | 2015-02-02 | 2022-12-22 | Fuji Electric Co., Ltd. | Verfahren zur Herstellung einer Siliciumcarbid-Halbleitervorrichtung und Siliciumcarbid-Halbleitervorrichtung |
| CN111108171B (zh) | 2017-09-29 | 2022-08-12 | 福吉米株式会社 | 研磨用组合物 |
| EP3666937B1 (en) * | 2018-10-16 | 2023-07-05 | Sicc Co., Ltd. | High-flatness, low-damage and large-diameter monocrystalline silicon carbide substrate, and manufacturing method therefor |
| CN109321980B (zh) * | 2018-10-16 | 2019-11-19 | 山东天岳先进材料科技有限公司 | 一种高平整度、低损伤大直径单晶碳化硅衬底 |
| CN109571154A (zh) * | 2018-12-28 | 2019-04-05 | 天津洙诺科技有限公司 | 一种4h碳化硅晶片的抛光方法 |
| WO2020235225A1 (ja) * | 2019-05-17 | 2020-11-26 | 住友電気工業株式会社 | 炭化珪素基板 |
| WO2020235205A1 (ja) * | 2019-05-17 | 2020-11-26 | 住友電気工業株式会社 | 炭化珪素基板 |
| JP7622645B2 (ja) * | 2019-12-02 | 2025-01-28 | 住友電気工業株式会社 | 炭化珪素基板および炭化珪素基板の製造方法 |
| KR102340307B1 (ko) * | 2020-04-09 | 2021-12-15 | 포항공과대학교 산학협력단 | 4H-SiC 기판에 옴 접촉을 형성하는 반도체 및 그것의 제조 방법 |
| KR102236398B1 (ko) * | 2020-09-22 | 2021-04-02 | 에스케이씨 주식회사 | 웨이퍼의 세정방법 및 불순물이 저감된 웨이퍼 |
| CN115592555B (zh) * | 2022-10-11 | 2024-12-10 | 南方科技大学 | 一种硅基材料的表面修整器及其在修型与抛光中的应用 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11157989A (ja) | 1997-11-25 | 1999-06-15 | Toyo Tanso Kk | 気相成長用サセプター及びその製造方法 |
| JP2004014536A (ja) | 2002-06-03 | 2004-01-15 | Nec Electronics Corp | 半導体基板の汚染物除去方法 |
| NZ542844A (en) * | 2003-03-11 | 2008-11-28 | Primet Prec Materials Inc | Multi-carbide material manufacture and use |
| KR100612853B1 (ko) * | 2004-07-21 | 2006-08-14 | 삼성전자주식회사 | 와이어 형태의 실리사이드를 포함하는 Ｓｉ 계열 물질층및 그 제조방법 |
| US7514323B2 (en) * | 2005-11-28 | 2009-04-07 | International Business Machines Corporation | Vertical SOI trench SONOS cell |
| DE102006011312B4 (de) | 2006-03-11 | 2010-04-15 | Fachhochschule Hildesheim/Holzminden/Göttingen - Körperschaft des öffentlichen Rechts - | Vorrichtung zur Plasmabehandlung unter Atmosphärendruck |
| JP2008280207A (ja) * | 2007-05-10 | 2008-11-20 | Matsushita Electric Ind Co Ltd | ＳｉＣ単結晶基板の製造方法 |
| JP4552968B2 (ja) * | 2007-05-29 | 2010-09-29 | 住友電気工業株式会社 | 化合物半導体基板の研磨方法、化合物半導体基板、化合物半導体エピ基板の製造方法および化合物半導体エピ基板 |
| JP4887266B2 (ja) * | 2007-10-15 | 2012-02-29 | 株式会社荏原製作所 | 平坦化方法 |
| US8734661B2 (en) * | 2007-10-15 | 2014-05-27 | Ebara Corporation | Flattening method and flattening apparatus |
| JP2009194216A (ja) | 2008-02-15 | 2009-08-27 | Hitachi Ltd | 半導体装置の製造方法 |
| JP5267177B2 (ja) * | 2009-02-04 | 2013-08-21 | 日立金属株式会社 | 炭化珪素単結晶基板の製造方法 |
| JP2011003769A (ja) * | 2009-06-19 | 2011-01-06 | Panasonic Corp | ＳｉＣ単結晶基板の製造方法 |
| JP5033168B2 (ja) | 2009-09-29 | 2012-09-26 | 忠弘 大見 | 炭化珪素製品、その製造方法、及び、炭化珪素製品の洗浄方法 |
| JP5644175B2 (ja) * | 2010-04-27 | 2014-12-24 | 和人 山内 | ＳｉＣ基板へのグラフェン成膜方法 |
| DE202012013565U1 (de) * | 2011-07-20 | 2017-11-14 | Sumitomo Electric Industries, Ltd. | Siliziumkarbidsubstrat und Halbleitervorrichtung |
| CN104979184B (zh) * | 2011-10-07 | 2018-02-02 | 旭硝子株式会社 | 碳化硅单晶基板及研磨液 |
| JPWO2013073216A1 (ja) * | 2011-11-14 | 2015-04-02 | 住友電気工業株式会社 | 炭化珪素基板、半導体装置およびこれらの製造方法 |
| WO2013084934A1 (ja) | 2011-12-06 | 2013-06-13 | 国立大学法人大阪大学 | 固体酸化物の加工方法及びその装置 |
| JP5803786B2 (ja) * | 2012-04-02 | 2015-11-04 | 住友電気工業株式会社 | 炭化珪素基板、半導体装置およびこれらの製造方法 |
| WO2014050831A1 (ja) | 2012-09-28 | 2014-04-03 | Hoya株式会社 | 多層反射膜付き基板の製造方法 |
| JP2014210690A (ja) * | 2013-04-22 | 2014-11-13 | 住友電気工業株式会社 | 炭化珪素基板の製造方法 |
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2015
- 2015-08-31 CN CN201580055161.3A patent/CN106796877B/zh active Active
- 2015-08-31 US US15/520,435 patent/US10113249B2/en active Active
- 2015-08-31 DE DE112015004795.6T patent/DE112015004795T5/de not_active Ceased
- 2015-08-31 WO PCT/JP2015/074741 patent/WO2016063632A1/ja active Application Filing
- 2015-08-31 CN CN202011131017.2A patent/CN112531019B/zh active Active
- 2015-08-31 JP JP2015562220A patent/JP5924462B1/ja active Active
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2016
- 2016-04-18 JP JP2016082779A patent/JP6634942B2/ja active Active
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2018
- 2018-08-21 US US16/106,101 patent/US10704163B2/en active Active
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2019
- 2019-12-13 JP JP2019225374A patent/JP6849049B2/ja active Active
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2021
- 2021-03-03 JP JP2021033379A patent/JP7095765B2/ja active Active