JP2016143738A5 - - Google Patents

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Publication number
JP2016143738A5
JP2016143738A5 JP2015017642A JP2015017642A JP2016143738A5 JP 2016143738 A5 JP2016143738 A5 JP 2016143738A5 JP 2015017642 A JP2015017642 A JP 2015017642A JP 2015017642 A JP2015017642 A JP 2015017642A JP 2016143738 A5 JP2016143738 A5 JP 2016143738A5
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JP
Japan
Prior art keywords
plasma processing
regression equation
processing apparatus
combination
emission intensity
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JP2015017642A
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English (en)
Japanese (ja)
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JP2016143738A (ja
JP6310866B2 (ja
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Priority claimed from JP2015017642A external-priority patent/JP6310866B2/ja
Priority to JP2015017642A priority Critical patent/JP6310866B2/ja
Application filed filed Critical
Priority to KR1020150106692A priority patent/KR101746044B1/ko
Priority to US14/825,098 priority patent/US10408762B2/en
Priority to TW104126399A priority patent/TWI546638B/zh
Publication of JP2016143738A publication Critical patent/JP2016143738A/ja
Publication of JP2016143738A5 publication Critical patent/JP2016143738A5/ja
Publication of JP6310866B2 publication Critical patent/JP6310866B2/ja
Application granted granted Critical
Priority to US16/272,354 priority patent/US12442770B2/en
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JP2015017642A 2015-01-30 2015-01-30 プラズマ処理装置及びプラズマ処理方法並びに解析方法 Active JP6310866B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2015017642A JP6310866B2 (ja) 2015-01-30 2015-01-30 プラズマ処理装置及びプラズマ処理方法並びに解析方法
KR1020150106692A KR101746044B1 (ko) 2015-01-30 2015-07-28 플라즈마 처리 장치 및 플라즈마 처리 방법과 해석 장치 및 해석 방법
US14/825,098 US10408762B2 (en) 2015-01-30 2015-08-12 Plasma processing apparatus, plasma processing method and plasma processing analysis method
TW104126399A TWI546638B (zh) 2015-01-30 2015-08-13 電漿處理裝置及電漿處理方法以及解析方法
US16/272,354 US12442770B2 (en) 2015-01-30 2019-02-11 Plasma processing apparatus, plasma processing method and plasma processing analysis method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015017642A JP6310866B2 (ja) 2015-01-30 2015-01-30 プラズマ処理装置及びプラズマ処理方法並びに解析方法

Publications (3)

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JP2016143738A JP2016143738A (ja) 2016-08-08
JP2016143738A5 true JP2016143738A5 (enExample) 2017-04-20
JP6310866B2 JP6310866B2 (ja) 2018-04-11

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US (2) US10408762B2 (enExample)
JP (1) JP6310866B2 (enExample)
KR (1) KR101746044B1 (enExample)
TW (1) TWI546638B (enExample)

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CN109153109B (zh) * 2016-05-16 2020-11-20 新东工业株式会社 表面处理加工方法以及表面处理加工装置
JP6730941B2 (ja) * 2017-01-10 2020-07-29 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6875224B2 (ja) 2017-08-08 2021-05-19 株式会社日立ハイテク プラズマ処理装置及び半導体装置製造システム
JP7058129B2 (ja) 2018-01-17 2022-04-21 株式会社日立ハイテク プラズマ処理装置
JP7075771B2 (ja) * 2018-02-08 2022-05-26 株式会社Ｓｃｒｅｅｎホールディングス データ処理方法、データ処理装置、データ処理システム、およびデータ処理プログラム
JP7080065B2 (ja) 2018-02-08 2022-06-03 株式会社Ｓｃｒｅｅｎホールディングス データ処理方法、データ処理装置、データ処理システム、およびデータ処理プログラム
JP7074490B2 (ja) * 2018-02-08 2022-05-24 株式会社Ｓｃｒｅｅｎホールディングス データ処理方法、データ処理装置、データ処理システム、およびデータ処理プログラム
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