JP2016143738A5 - - Google Patents
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- JP2016143738A5 JP2016143738A5 JP2015017642A JP2015017642A JP2016143738A5 JP 2016143738 A5 JP2016143738 A5 JP 2016143738A5 JP 2015017642 A JP2015017642 A JP 2015017642A JP 2015017642 A JP2015017642 A JP 2015017642A JP 2016143738 A5 JP2016143738 A5 JP 2016143738A5
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- JP
- Japan
- Prior art keywords
- plasma processing
- regression equation
- processing apparatus
- combination
- emission intensity
- Prior art date
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- 238000004458 analytical method Methods 0.000 claims 13
- 238000009832 plasma treatment Methods 0.000 claims 12
- 230000036962 time dependent Effects 0.000 claims 4
- 238000003672 processing method Methods 0.000 claims 2
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015017642A JP6310866B2 (ja) | 2015-01-30 | 2015-01-30 | プラズマ処理装置及びプラズマ処理方法並びに解析方法 |
| KR1020150106692A KR101746044B1 (ko) | 2015-01-30 | 2015-07-28 | 플라즈마 처리 장치 및 플라즈마 처리 방법과 해석 장치 및 해석 방법 |
| US14/825,098 US10408762B2 (en) | 2015-01-30 | 2015-08-12 | Plasma processing apparatus, plasma processing method and plasma processing analysis method |
| TW104126399A TWI546638B (zh) | 2015-01-30 | 2015-08-13 | 電漿處理裝置及電漿處理方法以及解析方法 |
| US16/272,354 US12442770B2 (en) | 2015-01-30 | 2019-02-11 | Plasma processing apparatus, plasma processing method and plasma processing analysis method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015017642A JP6310866B2 (ja) | 2015-01-30 | 2015-01-30 | プラズマ処理装置及びプラズマ処理方法並びに解析方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016143738A JP2016143738A (ja) | 2016-08-08 |
| JP2016143738A5 true JP2016143738A5 (enExample) | 2017-04-20 |
| JP6310866B2 JP6310866B2 (ja) | 2018-04-11 |
Family
ID=56553298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015017642A Active JP6310866B2 (ja) | 2015-01-30 | 2015-01-30 | プラズマ処理装置及びプラズマ処理方法並びに解析方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US10408762B2 (enExample) |
| JP (1) | JP6310866B2 (enExample) |
| KR (1) | KR101746044B1 (enExample) |
| TW (1) | TWI546638B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BR112018014159A2 (pt) * | 2016-05-16 | 2018-12-11 | Sintokogio Ltd | método de processamento de tratamento de superfície e dispositivo de processamento de tratamento de superfície |
| JP6730941B2 (ja) * | 2017-01-10 | 2020-07-29 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| JP6875224B2 (ja) | 2017-08-08 | 2021-05-19 | 株式会社日立ハイテク | プラズマ処理装置及び半導体装置製造システム |
| JP7058129B2 (ja) | 2018-01-17 | 2022-04-21 | 株式会社日立ハイテク | プラズマ処理装置 |
| JP7075771B2 (ja) * | 2018-02-08 | 2022-05-26 | 株式会社Screenホールディングス | データ処理方法、データ処理装置、データ処理システム、およびデータ処理プログラム |
| JP7074490B2 (ja) * | 2018-02-08 | 2022-05-24 | 株式会社Screenホールディングス | データ処理方法、データ処理装置、データ処理システム、およびデータ処理プログラム |
| JP7080065B2 (ja) | 2018-02-08 | 2022-06-03 | 株式会社Screenホールディングス | データ処理方法、データ処理装置、データ処理システム、およびデータ処理プログラム |
| JP7038563B2 (ja) * | 2018-02-15 | 2022-03-18 | 東京エレクトロン株式会社 | 基板処理装置、流量制御方法及び流量制御プログラム |
| JP7108562B2 (ja) * | 2019-02-22 | 2022-07-28 | 株式会社日立製作所 | 処理の制御パラメータの決定方法、及び計測システム |
| JP2020181959A (ja) * | 2019-04-26 | 2020-11-05 | 東京エレクトロン株式会社 | 学習方法、管理装置および管理プログラム |
| US20250006478A1 (en) * | 2023-06-28 | 2025-01-02 | Mks Instruments, Inc. | Pulse-Shaping Using A Sub-Region Tuning Apparatus And Method |
Family Cites Families (35)
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| US5170367A (en) * | 1990-04-25 | 1992-12-08 | The Expert System Technologies, Inc. | Nondestructive determination of phase fractions of composite materials |
| JPH08330278A (ja) * | 1995-05-30 | 1996-12-13 | Anelva Corp | 表面処理方法および表面処理装置 |
| JP2927226B2 (ja) * | 1995-12-18 | 1999-07-28 | 日本電気株式会社 | 形状シミュレーション方法 |
| US5904487A (en) * | 1996-10-08 | 1999-05-18 | Advanced Micro Devices, Inc. | Electrode reshaping in a semiconductor etching device |
| JP4227301B2 (ja) * | 1998-02-03 | 2009-02-18 | 東京エレクトロンAt株式会社 | 半導体プラズマ処理における終点検出方法 |
| US7138156B1 (en) * | 2000-09-26 | 2006-11-21 | Myrick Michael L | Filter design algorithm for multi-variate optical computing |
| US7297287B2 (en) * | 2001-03-23 | 2007-11-20 | Tokyo Electron Limited | Method and apparatus for endpoint detection using partial least squares |
| JP3708031B2 (ja) * | 2001-06-29 | 2005-10-19 | 株式会社日立製作所 | プラズマ処理装置および処理方法 |
| JP2003197609A (ja) * | 2001-12-27 | 2003-07-11 | Tokyo Electron Ltd | プラズマ処理装置の監視方法及びプラズマ処理装置 |
| AU2003235901A1 (en) * | 2002-05-16 | 2003-12-02 | Tokyo Electron Limited | Method of predicting processing device condition or processed result |
| US7505879B2 (en) * | 2002-06-05 | 2009-03-17 | Tokyo Electron Limited | Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus |
| US7712056B2 (en) * | 2002-06-07 | 2010-05-04 | Cadence Design Systems, Inc. | Characterization and verification for integrated circuit designs |
| WO2004003969A2 (en) * | 2002-06-28 | 2004-01-08 | Tokyo Electron Limited | Method and system for predicting process performance using material processing tool and sensor data |
| JP4464276B2 (ja) * | 2002-08-13 | 2010-05-19 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US6830939B2 (en) * | 2002-08-28 | 2004-12-14 | Verity Instruments, Inc. | System and method for determining endpoint in etch processes using partial least squares discriminant analysis in the time domain of optical emission spectra |
| JP4448335B2 (ja) * | 2004-01-08 | 2010-04-07 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US7821655B2 (en) * | 2004-02-09 | 2010-10-26 | Axcelis Technologies, Inc. | In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction |
| US7079984B2 (en) * | 2004-03-03 | 2006-07-18 | Fisher-Rosemount Systems, Inc. | Abnormal situation prevention in a process plant |
| US7533140B2 (en) * | 2004-04-13 | 2009-05-12 | Jaber Associates, L.L.C. | Method and apparatus for enhancing processing speed for performing a least mean square operation by parallel processing |
| US7630064B2 (en) * | 2006-03-16 | 2009-12-08 | Tokyo Electron Limited | Prediction method and apparatus for substrate processing apparatus |
| US7502709B2 (en) * | 2006-03-28 | 2009-03-10 | Tokyo Electron, Ltd. | Dynamic metrology sampling for a dual damascene process |
| JP5192850B2 (ja) | 2008-02-27 | 2013-05-08 | 株式会社日立ハイテクノロジーズ | エッチング終点判定方法 |
| US8396582B2 (en) * | 2008-03-08 | 2013-03-12 | Tokyo Electron Limited | Method and apparatus for self-learning and self-improving a semiconductor manufacturing tool |
| JP5334787B2 (ja) * | 2009-10-09 | 2013-11-06 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US8489218B2 (en) * | 2010-10-15 | 2013-07-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chamber match using important variables filtered by dynamic multivariate analysis |
| US8883024B2 (en) * | 2010-10-18 | 2014-11-11 | Tokyo Electron Limited | Using vacuum ultra-violet (VUV) data in radio frequency (RF) sources |
| JP2012190842A (ja) * | 2011-03-08 | 2012-10-04 | Renesas Electronics Corp | 半導体装置の製造方法 |
| US12002545B2 (en) * | 2011-08-03 | 2024-06-04 | ExSano, Inc. | Technique for identifying features |
| JP5779482B2 (ja) * | 2011-11-15 | 2015-09-16 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP2013161913A (ja) | 2012-02-03 | 2013-08-19 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
| US9240360B2 (en) * | 2012-07-25 | 2016-01-19 | International Business Machines Corporation | Run-to-run control utilizing virtual metrology in semiconductor manufacturing |
| US9177875B2 (en) * | 2013-11-15 | 2015-11-03 | Taiwan Seminconductor Manufacturing Co., Ltd. | Advanced process control method for controlling width of spacer and dummy sidewall in semiconductor device |
| US9256702B2 (en) * | 2013-12-18 | 2016-02-09 | Johnson Controls Technology Company | Systems and methods for determining an appropriate model parameter order |
| JP6504770B2 (ja) * | 2014-06-30 | 2019-04-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP6220319B2 (ja) * | 2014-07-17 | 2017-10-25 | 株式会社日立ハイテクノロジーズ | データ解析方法及びプラズマエッチング方法並びにプラズマ処理装置 |
-
2015
- 2015-01-30 JP JP2015017642A patent/JP6310866B2/ja active Active
- 2015-07-28 KR KR1020150106692A patent/KR101746044B1/ko active Active
- 2015-08-12 US US14/825,098 patent/US10408762B2/en active Active
- 2015-08-13 TW TW104126399A patent/TWI546638B/zh active
-
2019
- 2019-02-11 US US16/272,354 patent/US12442770B2/en active Active
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