TWI546638B - 電漿處理裝置及電漿處理方法以及解析方法 - Google Patents

電漿處理裝置及電漿處理方法以及解析方法 Download PDF

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Publication number
TWI546638B
TWI546638B TW104126399A TW104126399A TWI546638B TW I546638 B TWI546638 B TW I546638B TW 104126399 A TW104126399 A TW 104126399A TW 104126399 A TW104126399 A TW 104126399A TW I546638 B TWI546638 B TW I546638B
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TW
Taiwan
Prior art keywords
plasma processing
regression equation
column
value
luminous intensity
Prior art date
Application number
TW104126399A
Other languages
English (en)
Chinese (zh)
Other versions
TW201627785A (zh
Inventor
Ryoji Asakura
Kenji Tamaki
Daisuke Shiraishi
Akira Kagoshima
Satomi Inoue
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of TW201627785A publication Critical patent/TW201627785A/zh
Application granted granted Critical
Publication of TWI546638B publication Critical patent/TWI546638B/zh

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
    • G01N21/68—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence using high frequency electric fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Immunology (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
TW104126399A 2015-01-30 2015-08-13 電漿處理裝置及電漿處理方法以及解析方法 TWI546638B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015017642A JP6310866B2 (ja) 2015-01-30 2015-01-30 プラズマ処理装置及びプラズマ処理方法並びに解析方法

Publications (2)

Publication Number Publication Date
TW201627785A TW201627785A (zh) 2016-08-01
TWI546638B true TWI546638B (zh) 2016-08-21

Family

ID=56553298

Family Applications (1)

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TW104126399A TWI546638B (zh) 2015-01-30 2015-08-13 電漿處理裝置及電漿處理方法以及解析方法

Country Status (4)

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US (2) US10408762B2 (enExample)
JP (1) JP6310866B2 (enExample)
KR (1) KR101746044B1 (enExample)
TW (1) TWI546638B (enExample)

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JP6875224B2 (ja) 2017-08-08 2021-05-19 株式会社日立ハイテク プラズマ処理装置及び半導体装置製造システム
JP7058129B2 (ja) 2018-01-17 2022-04-21 株式会社日立ハイテク プラズマ処理装置
JP7075771B2 (ja) * 2018-02-08 2022-05-26 株式会社Ｓｃｒｅｅｎホールディングス データ処理方法、データ処理装置、データ処理システム、およびデータ処理プログラム
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Also Published As

Publication number Publication date
JP6310866B2 (ja) 2018-04-11
JP2016143738A (ja) 2016-08-08
KR101746044B1 (ko) 2017-06-12
US10408762B2 (en) 2019-09-10
US20190170653A1 (en) 2019-06-06
US12442770B2 (en) 2025-10-14
KR20160094251A (ko) 2016-08-09
TW201627785A (zh) 2016-08-01
US20160225681A1 (en) 2016-08-04

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