KR101746044B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법과 해석 장치 및 해석 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법과 해석 장치 및 해석 방법 Download PDF

Info

Publication number
KR101746044B1
KR101746044B1 KR1020150106692A KR20150106692A KR101746044B1 KR 101746044 B1 KR101746044 B1 KR 101746044B1 KR 1020150106692 A KR1020150106692 A KR 1020150106692A KR 20150106692 A KR20150106692 A KR 20150106692A KR 101746044 B1 KR101746044 B1 KR 101746044B1
Authority
KR
South Korea
Prior art keywords
recipe
emission intensity
regression equation
plasma processing
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020150106692A
Other languages
English (en)
Korean (ko)
Other versions
KR20160094251A (ko
Inventor
료지 아사쿠라
겐지 다마키
다이스케 시라이시
아키라 가고시마
사토미 이노우에
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히다치 하이테크놀로지즈 filed Critical 가부시키가이샤 히다치 하이테크놀로지즈
Publication of KR20160094251A publication Critical patent/KR20160094251A/ko
Application granted granted Critical
Publication of KR101746044B1 publication Critical patent/KR101746044B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L21/3065—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
    • G01N21/68—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence using high frequency electric fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
KR1020150106692A 2015-01-30 2015-07-28 플라즈마 처리 장치 및 플라즈마 처리 방법과 해석 장치 및 해석 방법 Active KR101746044B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-017642 2015-01-30
JP2015017642A JP6310866B2 (ja) 2015-01-30 2015-01-30 プラズマ処理装置及びプラズマ処理方法並びに解析方法

Publications (2)

Publication Number Publication Date
KR20160094251A KR20160094251A (ko) 2016-08-09
KR101746044B1 true KR101746044B1 (ko) 2017-06-12

Family

ID=56553298

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150106692A Active KR101746044B1 (ko) 2015-01-30 2015-07-28 플라즈마 처리 장치 및 플라즈마 처리 방법과 해석 장치 및 해석 방법

Country Status (4)

Country Link
US (2) US10408762B2 (enExample)
JP (1) JP6310866B2 (enExample)
KR (1) KR101746044B1 (enExample)
TW (1) TWI546638B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3388196B1 (en) * 2016-05-16 2024-07-17 Sintokogio, Ltd. Surface treatment processing method and surface treatment processing device
JP6730941B2 (ja) * 2017-01-10 2020-07-29 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6875224B2 (ja) * 2017-08-08 2021-05-19 株式会社日立ハイテク プラズマ処理装置及び半導体装置製造システム
JP7058129B2 (ja) 2018-01-17 2022-04-21 株式会社日立ハイテク プラズマ処理装置
JP7080065B2 (ja) 2018-02-08 2022-06-03 株式会社Ｓｃｒｅｅｎホールディングス データ処理方法、データ処理装置、データ処理システム、およびデータ処理プログラム
JP7074490B2 (ja) * 2018-02-08 2022-05-24 株式会社Ｓｃｒｅｅｎホールディングス データ処理方法、データ処理装置、データ処理システム、およびデータ処理プログラム
JP7075771B2 (ja) * 2018-02-08 2022-05-26 株式会社Ｓｃｒｅｅｎホールディングス データ処理方法、データ処理装置、データ処理システム、およびデータ処理プログラム
JP7038563B2 (ja) * 2018-02-15 2022-03-18 東京エレクトロン株式会社 基板処理装置、流量制御方法及び流量制御プログラム
JP7108562B2 (ja) * 2019-02-22 2022-07-28 株式会社日立製作所 処理の制御パラメータの決定方法、及び計測システム
JP2020181959A (ja) * 2019-04-26 2020-11-05 東京エレクトロン株式会社 学習方法、管理装置および管理プログラム
US20250006478A1 (en) * 2023-06-28 2025-01-02 Mks Instruments, Inc. Pulse-Shaping Using A Sub-Region Tuning Apparatus And Method

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5170367A (en) * 1990-04-25 1992-12-08 The Expert System Technologies, Inc. Nondestructive determination of phase fractions of composite materials
JPH08330278A (ja) * 1995-05-30 1996-12-13 Anelva Corp 表面処理方法および表面処理装置
JP2927226B2 (ja) * 1995-12-18 1999-07-28 日本電気株式会社 形状シミュレーション方法
US5904487A (en) * 1996-10-08 1999-05-18 Advanced Micro Devices, Inc. Electrode reshaping in a semiconductor etching device
JP4227301B2 (ja) * 1998-02-03 2009-02-18 東京エレクトロンＡｔ株式会社 半導体プラズマ処理における終点検出方法
US7138156B1 (en) * 2000-09-26 2006-11-21 Myrick Michael L Filter design algorithm for multi-variate optical computing
JP2004527117A (ja) * 2001-03-23 2004-09-02 東京エレクトロン株式会社 部分最小自乗を使用したエンドポイント検知方法と装置
JP3708031B2 (ja) * 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
JP2003197609A (ja) * 2001-12-27 2003-07-11 Tokyo Electron Ltd プラズマ処理装置の監視方法及びプラズマ処理装置
AU2003235901A1 (en) * 2002-05-16 2003-12-02 Tokyo Electron Limited Method of predicting processing device condition or processed result
US7505879B2 (en) * 2002-06-05 2009-03-17 Tokyo Electron Limited Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus
US7712056B2 (en) * 2002-06-07 2010-05-04 Cadence Design Systems, Inc. Characterization and verification for integrated circuit designs
TWI259546B (en) * 2002-06-28 2006-08-01 Tokyo Electron Ltd Method and system for predicting process performance using material processing tool and sensor data
JP4464276B2 (ja) * 2002-08-13 2010-05-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US6830939B2 (en) * 2002-08-28 2004-12-14 Verity Instruments, Inc. System and method for determining endpoint in etch processes using partial least squares discriminant analysis in the time domain of optical emission spectra
JP4448335B2 (ja) * 2004-01-08 2010-04-07 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US7821655B2 (en) * 2004-02-09 2010-10-26 Axcelis Technologies, Inc. In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction
US7079984B2 (en) * 2004-03-03 2006-07-18 Fisher-Rosemount Systems, Inc. Abnormal situation prevention in a process plant
US7533140B2 (en) * 2004-04-13 2009-05-12 Jaber Associates, L.L.C. Method and apparatus for enhancing processing speed for performing a least mean square operation by parallel processing
US7630064B2 (en) * 2006-03-16 2009-12-08 Tokyo Electron Limited Prediction method and apparatus for substrate processing apparatus
US7502709B2 (en) * 2006-03-28 2009-03-10 Tokyo Electron, Ltd. Dynamic metrology sampling for a dual damascene process
JP5192850B2 (ja) 2008-02-27 2013-05-08 株式会社日立ハイテクノロジーズ エッチング終点判定方法
US8396582B2 (en) * 2008-03-08 2013-03-12 Tokyo Electron Limited Method and apparatus for self-learning and self-improving a semiconductor manufacturing tool
JP5334787B2 (ja) * 2009-10-09 2013-11-06 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8489218B2 (en) * 2010-10-15 2013-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Chamber match using important variables filtered by dynamic multivariate analysis
US8877080B2 (en) * 2010-10-18 2014-11-04 Tokyo Electron Limited Using vacuum ultra-violet (VUV) data in microwave sources
JP2012190842A (ja) * 2011-03-08 2012-10-04 Renesas Electronics Corp 半導体装置の製造方法
US12002545B2 (en) * 2011-08-03 2024-06-04 ExSano, Inc. Technique for identifying features
JP5779482B2 (ja) 2011-11-15 2015-09-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2013161913A (ja) 2012-02-03 2013-08-19 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
US9240360B2 (en) * 2012-07-25 2016-01-19 International Business Machines Corporation Run-to-run control utilizing virtual metrology in semiconductor manufacturing
US9177875B2 (en) * 2013-11-15 2015-11-03 Taiwan Seminconductor Manufacturing Co., Ltd. Advanced process control method for controlling width of spacer and dummy sidewall in semiconductor device
US9256702B2 (en) * 2013-12-18 2016-02-09 Johnson Controls Technology Company Systems and methods for determining an appropriate model parameter order
JP6504770B2 (ja) * 2014-06-30 2019-04-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6220319B2 (ja) * 2014-07-17 2017-10-25 株式会社日立ハイテクノロジーズ データ解析方法及びプラズマエッチング方法並びにプラズマ処理装置

Also Published As

Publication number Publication date
JP6310866B2 (ja) 2018-04-11
US20190170653A1 (en) 2019-06-06
JP2016143738A (ja) 2016-08-08
US12442770B2 (en) 2025-10-14
US20160225681A1 (en) 2016-08-04
KR20160094251A (ko) 2016-08-09
TW201627785A (zh) 2016-08-01
US10408762B2 (en) 2019-09-10
TWI546638B (zh) 2016-08-21

Similar Documents

Publication Publication Date Title
KR101746044B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법과 해석 장치 및 해석 방법
JP6549917B2 (ja) プラズマ処理装置およびそのデータ解析装置
JP6220319B2 (ja) データ解析方法及びプラズマエッチング方法並びにプラズマ処理装置
KR101571928B1 (ko) 분석 방법, 분석 장치 및 에칭 처리 시스템
JP6875224B2 (ja) プラズマ処理装置及び半導体装置製造システム
KR102206347B1 (ko) 시스템 및 처리 조건의 결정 방법
US11410836B2 (en) Analysis method and semiconductor etching apparatus
KR102100210B1 (ko) 플라스마 처리 장치
KR101887383B1 (ko) 플라스마 처리 장치 및 플라스마 처리 데이터를 해석하는 해석 방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000