JP2016082233A - マルチモードパルスプロセスにおいてプロセス点を検出するためのシステム及び方法 - Google Patents

マルチモードパルスプロセスにおいてプロセス点を検出するためのシステム及び方法 Download PDF

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Publication number
JP2016082233A
JP2016082233A JP2015200658A JP2015200658A JP2016082233A JP 2016082233 A JP2016082233 A JP 2016082233A JP 2015200658 A JP2015200658 A JP 2015200658A JP 2015200658 A JP2015200658 A JP 2015200658A JP 2016082233 A JP2016082233 A JP 2016082233A
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Japan
Prior art keywords
output variable
point
collected
pulse
multimode
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JP2015200658A
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Japanese (ja)
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JP2016082233A5 (https=
Inventor
ヤシン・カボウジ
Kabouzi Yassine
ホルヘ・ルケ
Luque Jorge
サード アンドリュー・ディー．・ベイリー・ザ
D Bailey Andrew Iii
サード アンドリュー・ディー．・ベイリー・ザ
メフメト・デルヤ・テティカー
Derya Tetiker Mehmet
ラムクマル・スバラマニアン
Subramanian Ramkumar
葉子 山口
Yoko Yamaguchi
葉子 山口
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Lam Research Corp
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Lam Research Corp
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Publication of JP2016082233A publication Critical patent/JP2016082233A/ja
Publication of JP2016082233A5 publication Critical patent/JP2016082233A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
JP2015200658A 2014-10-20 2015-10-09 マルチモードパルスプロセスにおいてプロセス点を検出するためのシステム及び方法 Pending JP2016082233A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462066330P 2014-10-20 2014-10-20
US62/066,330 2014-10-20
US14/523,770 2014-10-24
US14/523,770 US9640371B2 (en) 2014-10-20 2014-10-24 System and method for detecting a process point in multi-mode pulse processes

Publications (2)

Publication Number Publication Date
JP2016082233A true JP2016082233A (ja) 2016-05-16
JP2016082233A5 JP2016082233A5 (https=) 2018-12-06

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JP2015200658A Pending JP2016082233A (ja) 2014-10-20 2015-10-09 マルチモードパルスプロセスにおいてプロセス点を検出するためのシステム及び方法

Country Status (7)

Country Link
US (2) US9640371B2 (https=)
EP (1) EP3012855B1 (https=)
JP (1) JP2016082233A (https=)
KR (1) KR102623688B1 (https=)
CN (2) CN110246743B (https=)
SG (1) SG10201508634SA (https=)
TW (1) TWI679671B (https=)

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JP2021150379A (ja) * 2020-03-17 2021-09-27 東京エレクトロン株式会社 検出方法及びプラズマ処理装置
JP2022539991A (ja) * 2019-06-27 2022-09-14 ラム リサーチ コーポレーション 交互のエッチングプロセスおよび不動態化プロセス
JP2024526172A (ja) * 2021-06-29 2024-07-17 ラム リサーチ コーポレーション 高アスペクト比エッチングのための多状態パルシング
JP2024527365A (ja) * 2021-07-06 2024-07-24 オックスフォード インストルメンツ ナノテクノロジー ツールス リミテッド 薄膜のエッチング又は堆積方法
US12183589B2 (en) 2018-01-30 2024-12-31 Lam Research Corporation Tin oxide mandrels in patterning
US12417916B2 (en) 2017-02-17 2025-09-16 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US12584216B2 (en) 2021-04-21 2026-03-24 Lam Research Corporation Minimizing tin oxide chamber clean time
US12606905B2 (en) 2018-03-19 2026-04-21 Lam Research Corporation Chamfer-less via integration scheme

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US9640371B2 (en) * 2014-10-20 2017-05-02 Lam Research Corporation System and method for detecting a process point in multi-mode pulse processes
JP6356615B2 (ja) * 2015-02-06 2018-07-11 東芝メモリ株式会社 半導体製造装置および半導体製造方法
US10522429B2 (en) * 2015-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device
US20170330764A1 (en) * 2016-05-12 2017-11-16 Lam Research Corporation Methods and apparatuses for controlling transitions between continuous wave and pulsing plasmas
CN107644811B (zh) * 2016-07-20 2020-05-22 中微半导体设备(上海)股份有限公司 博世工艺的刻蚀终点监测方法以及博世刻蚀方法
US11209478B2 (en) * 2018-04-03 2021-12-28 Applied Materials, Inc. Pulse system verification
CN110648888B (zh) * 2018-06-27 2020-10-13 北京北方华创微电子装备有限公司 射频脉冲匹配方法及其装置、脉冲等离子体产生系统
US10748823B2 (en) 2018-09-27 2020-08-18 International Business Machines Corporation Embedded etch rate reference layer for enhanced etch time precision
WO2020106297A1 (en) * 2018-11-21 2020-05-28 Lam Research Corporation Method for determining cleaning endpoint
CN111238669B (zh) * 2018-11-29 2022-05-13 拓荆科技股份有限公司 用于半导体射频处理装置的温度测量方法
TW202309969A (zh) * 2021-05-06 2023-03-01 日商東京威力科創股份有限公司 電漿處理裝置及終點檢測方法
JP2024527822A (ja) * 2021-07-22 2024-07-26 ラム リサーチ コーポレーション プラズマプロセスの監視および制御
JP2025531746A (ja) * 2022-09-08 2025-09-25 ラム リサーチ コーポレーション 半導体機器の状態のマルチセンサ判定
US20240339309A1 (en) * 2023-04-10 2024-10-10 Tokyo Electron Limited Advanced OES Characterization

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JPH10125660A (ja) * 1996-08-29 1998-05-15 Fujitsu Ltd プラズマ処理装置、プロセスモニタ方法及び半導体装置の製造方法
JP2001044171A (ja) * 1999-07-28 2001-02-16 Matsushita Electric Ind Co Ltd エッチング終点検出方法および装置
JP2004134540A (ja) * 2002-10-10 2004-04-30 Dainippon Screen Mfg Co Ltd ドライエッチング装置および終点検出方法
JP2007501532A (ja) * 2003-05-09 2007-01-25 ウナクシス ユーエスエイ、インコーポレイテッド 時分割多重プロセスにおける包絡線フォロア終点検出
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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12437995B2 (en) 2017-02-17 2025-10-07 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US12417916B2 (en) 2017-02-17 2025-09-16 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US12183589B2 (en) 2018-01-30 2024-12-31 Lam Research Corporation Tin oxide mandrels in patterning
US12606905B2 (en) 2018-03-19 2026-04-21 Lam Research Corporation Chamfer-less via integration scheme
US12293919B2 (en) 2019-06-27 2025-05-06 Lam Research Corporation Alternating etch and passivation process
JP7549097B2 (ja) 2019-06-27 2024-09-10 ラム リサーチ コーポレーション 交互のエッチングプロセスおよび不動態化プロセス
JP2023134781A (ja) * 2019-06-27 2023-09-27 ラム リサーチ コーポレーション 交互のエッチングプロセスおよび不動態化プロセス
JP7320085B2 (ja) 2019-06-27 2023-08-02 ラム リサーチ コーポレーション 交互のエッチングプロセスおよび不動態化プロセス
JP2022539991A (ja) * 2019-06-27 2022-09-14 ラム リサーチ コーポレーション 交互のエッチングプロセスおよび不動態化プロセス
JP7454971B2 (ja) 2020-03-17 2024-03-25 東京エレクトロン株式会社 検出方法及びプラズマ処理装置
JP2021150379A (ja) * 2020-03-17 2021-09-27 東京エレクトロン株式会社 検出方法及びプラズマ処理装置
US12584216B2 (en) 2021-04-21 2026-03-24 Lam Research Corporation Minimizing tin oxide chamber clean time
JP2024526172A (ja) * 2021-06-29 2024-07-17 ラム リサーチ コーポレーション 高アスペクト比エッチングのための多状態パルシング
JP2024527365A (ja) * 2021-07-06 2024-07-24 オックスフォード インストルメンツ ナノテクノロジー ツールス リミテッド 薄膜のエッチング又は堆積方法

Also Published As

Publication number Publication date
CN105679688A (zh) 2016-06-15
CN105679688B (zh) 2019-04-16
US20170207070A1 (en) 2017-07-20
US20160111261A1 (en) 2016-04-21
CN110246743B (zh) 2022-12-20
US10242849B2 (en) 2019-03-26
CN110246743A (zh) 2019-09-17
KR102623688B1 (ko) 2024-01-10
KR20160046309A (ko) 2016-04-28
TW201630028A (zh) 2016-08-16
SG10201508634SA (en) 2016-05-30
US9640371B2 (en) 2017-05-02
EP3012855A1 (en) 2016-04-27
EP3012855B1 (en) 2018-07-18
TWI679671B (zh) 2019-12-11

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