CN110246743B - 在多模式脉冲处理中检测处理点的系统和方法 - Google Patents

在多模式脉冲处理中检测处理点的系统和方法 Download PDF

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Publication number
CN110246743B
CN110246743B CN201910203268.8A CN201910203268A CN110246743B CN 110246743 B CN110246743 B CN 110246743B CN 201910203268 A CN201910203268 A CN 201910203268A CN 110246743 B CN110246743 B CN 110246743B
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track
cycles
selected wafer
output variable
processing
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CN110246743A (zh
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亚辛·卡布兹
豪尔赫·卢克
安德鲁·D·贝利三世
穆罕默德·德里亚·特蒂克
拉姆库马尔·苏布拉马尼安
山口阳子
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
CN201910203268.8A 2014-10-20 2015-10-20 在多模式脉冲处理中检测处理点的系统和方法 Active CN110246743B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462066330P 2014-10-20 2014-10-20
US62/066,330 2014-10-20
US14/523,770 2014-10-24
US14/523,770 US9640371B2 (en) 2014-10-20 2014-10-24 System and method for detecting a process point in multi-mode pulse processes
CN201510683129.1A CN105679688B (zh) 2014-10-20 2015-10-20 在多模式脉冲处理中检测处理点的系统和方法

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US (2) US9640371B2 (https=)
EP (1) EP3012855B1 (https=)
JP (1) JP2016082233A (https=)
KR (1) KR102623688B1 (https=)
CN (2) CN110246743B (https=)
SG (1) SG10201508634SA (https=)
TW (1) TWI679671B (https=)

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CN107644811B (zh) * 2016-07-20 2020-05-22 中微半导体设备(上海)股份有限公司 博世工艺的刻蚀终点监测方法以及博世刻蚀方法
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CN110648888B (zh) * 2018-06-27 2020-10-13 北京北方华创微电子装备有限公司 射频脉冲匹配方法及其装置、脉冲等离子体产生系统
US10748823B2 (en) 2018-09-27 2020-08-18 International Business Machines Corporation Embedded etch rate reference layer for enhanced etch time precision
WO2020106297A1 (en) * 2018-11-21 2020-05-28 Lam Research Corporation Method for determining cleaning endpoint
CN111238669B (zh) * 2018-11-29 2022-05-13 拓荆科技股份有限公司 用于半导体射频处理装置的温度测量方法
US11551938B2 (en) * 2019-06-27 2023-01-10 Lam Research Corporation Alternating etch and passivation process
JP7454971B2 (ja) * 2020-03-17 2024-03-25 東京エレクトロン株式会社 検出方法及びプラズマ処理装置
TW202311555A (zh) 2021-04-21 2023-03-16 美商蘭姆研究公司 最小化錫氧化物腔室清潔時間
TW202309969A (zh) * 2021-05-06 2023-03-01 日商東京威力科創股份有限公司 電漿處理裝置及終點檢測方法
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GB202109722D0 (en) * 2021-07-06 2021-08-18 Oxford Instruments Nanotechnology Tools Ltd Method of etching or depositing a thin film
JP2024527822A (ja) * 2021-07-22 2024-07-26 ラム リサーチ コーポレーション プラズマプロセスの監視および制御
JP2025531746A (ja) * 2022-09-08 2025-09-25 ラム リサーチ コーポレーション 半導体機器の状態のマルチセンサ判定
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Publication number Publication date
CN105679688A (zh) 2016-06-15
CN105679688B (zh) 2019-04-16
US20170207070A1 (en) 2017-07-20
US20160111261A1 (en) 2016-04-21
JP2016082233A (ja) 2016-05-16
US10242849B2 (en) 2019-03-26
CN110246743A (zh) 2019-09-17
KR102623688B1 (ko) 2024-01-10
KR20160046309A (ko) 2016-04-28
TW201630028A (zh) 2016-08-16
SG10201508634SA (en) 2016-05-30
US9640371B2 (en) 2017-05-02
EP3012855A1 (en) 2016-04-27
EP3012855B1 (en) 2018-07-18
TWI679671B (zh) 2019-12-11

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