TWI679671B - 多模式脈衝程序中程序點偵測用之控制器、方法及電腦可讀取媒體 - Google Patents

多模式脈衝程序中程序點偵測用之控制器、方法及電腦可讀取媒體 Download PDF

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Publication number
TWI679671B
TWI679671B TW104134173A TW104134173A TWI679671B TW I679671 B TWI679671 B TW I679671B TW 104134173 A TW104134173 A TW 104134173A TW 104134173 A TW104134173 A TW 104134173A TW I679671 B TWI679671 B TW I679671B
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TW
Taiwan
Prior art keywords
program
mode pulse
point
identifying
pulse program
Prior art date
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TW104134173A
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English (en)
Chinese (zh)
Other versions
TW201630028A (zh
Inventor
亞辛 卡布茲
Yassine Kabouzi
豪爾赫 路克
Jorge Luque
安祖 Ｄ 貝利三世
Andrew D. Bailey Iii
穆罕默德 德里亞理查 泰蒂凱爾
Mehmet Derya TETIKER
萊姆庫瑪 賽伯瑪尼恩
Ramkumar Subramanian
山口葉子
Yoko Yamaguchi
Original Assignee
美商蘭姆研究公司
Lam Research Corporation
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Application filed by 美商蘭姆研究公司, Lam Research Corporation filed Critical 美商蘭姆研究公司
Publication of TW201630028A publication Critical patent/TW201630028A/zh
Application granted granted Critical
Publication of TWI679671B publication Critical patent/TWI679671B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
TW104134173A 2014-10-20 2015-10-19 多模式脈衝程序中程序點偵測用之控制器、方法及電腦可讀取媒體 TWI679671B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462066330P 2014-10-20 2014-10-20
US62/066,330 2014-10-20
US14/523,770 2014-10-24
US14/523,770 US9640371B2 (en) 2014-10-20 2014-10-24 System and method for detecting a process point in multi-mode pulse processes

Publications (2)

Publication Number Publication Date
TW201630028A TW201630028A (zh) 2016-08-16
TWI679671B true TWI679671B (zh) 2019-12-11

Family

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Family Applications (1)

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TW104134173A TWI679671B (zh) 2014-10-20 2015-10-19 多模式脈衝程序中程序點偵測用之控制器、方法及電腦可讀取媒體

Country Status (7)

Country Link
US (2) US9640371B2 (https=)
EP (1) EP3012855B1 (https=)
JP (1) JP2016082233A (https=)
KR (1) KR102623688B1 (https=)
CN (2) CN110246743B (https=)
SG (1) SG10201508634SA (https=)
TW (1) TWI679671B (https=)

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TWI893072B (zh) * 2020-03-17 2025-08-11 日商東京威力科創股份有限公司 偵測方法及電漿處理裝置

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US20170330764A1 (en) * 2016-05-12 2017-11-16 Lam Research Corporation Methods and apparatuses for controlling transitions between continuous wave and pulsing plasmas
CN107644811B (zh) * 2016-07-20 2020-05-22 中微半导体设备(上海)股份有限公司 博世工艺的刻蚀终点监测方法以及博世刻蚀方法
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KR102841279B1 (ko) 2018-03-19 2025-07-31 램 리써치 코포레이션 챔퍼리스 (chamferless) 비아 통합 스킴 (scheme)
US11209478B2 (en) * 2018-04-03 2021-12-28 Applied Materials, Inc. Pulse system verification
CN110648888B (zh) * 2018-06-27 2020-10-13 北京北方华创微电子装备有限公司 射频脉冲匹配方法及其装置、脉冲等离子体产生系统
US10748823B2 (en) 2018-09-27 2020-08-18 International Business Machines Corporation Embedded etch rate reference layer for enhanced etch time precision
WO2020106297A1 (en) * 2018-11-21 2020-05-28 Lam Research Corporation Method for determining cleaning endpoint
CN111238669B (zh) * 2018-11-29 2022-05-13 拓荆科技股份有限公司 用于半导体射频处理装置的温度测量方法
US11551938B2 (en) * 2019-06-27 2023-01-10 Lam Research Corporation Alternating etch and passivation process
TW202311555A (zh) 2021-04-21 2023-03-16 美商蘭姆研究公司 最小化錫氧化物腔室清潔時間
TW202309969A (zh) * 2021-05-06 2023-03-01 日商東京威力科創股份有限公司 電漿處理裝置及終點檢測方法
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JP2024527822A (ja) * 2021-07-22 2024-07-26 ラム リサーチ コーポレーション プラズマプロセスの監視および制御
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Also Published As

Publication number Publication date
CN105679688A (zh) 2016-06-15
CN105679688B (zh) 2019-04-16
US20170207070A1 (en) 2017-07-20
US20160111261A1 (en) 2016-04-21
CN110246743B (zh) 2022-12-20
JP2016082233A (ja) 2016-05-16
US10242849B2 (en) 2019-03-26
CN110246743A (zh) 2019-09-17
KR102623688B1 (ko) 2024-01-10
KR20160046309A (ko) 2016-04-28
TW201630028A (zh) 2016-08-16
SG10201508634SA (en) 2016-05-30
US9640371B2 (en) 2017-05-02
EP3012855A1 (en) 2016-04-27
EP3012855B1 (en) 2018-07-18

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