SG10201508634SA - System and method for detecting a process point in multi-mode pulse processes - Google Patents

System and method for detecting a process point in multi-mode pulse processes

Info

Publication number
SG10201508634SA
SG10201508634SA SG10201508634SA SG10201508634SA SG10201508634SA SG 10201508634S A SG10201508634S A SG 10201508634SA SG 10201508634S A SG10201508634S A SG 10201508634SA SG 10201508634S A SG10201508634S A SG 10201508634SA SG 10201508634S A SG10201508634S A SG 10201508634SA
Authority
SG
Singapore
Prior art keywords
detecting
process point
mode pulse
pulse processes
processes
Prior art date
Application number
SG10201508634SA
Inventor
Kabouzi Yassine
Luque Jorge
D Bailey Andrew Iii
Derya Tetiker Mehmet
Subramanian Ramkumar
Yamaguchi Yoko
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201508634SA publication Critical patent/SG10201508634SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
SG10201508634SA 2014-10-20 2015-10-19 System and method for detecting a process point in multi-mode pulse processes SG10201508634SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462066330P 2014-10-20 2014-10-20
US14/523,770 US9640371B2 (en) 2014-10-20 2014-10-24 System and method for detecting a process point in multi-mode pulse processes

Publications (1)

Publication Number Publication Date
SG10201508634SA true SG10201508634SA (en) 2016-05-30

Family

ID=54337130

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201508634SA SG10201508634SA (en) 2014-10-20 2015-10-19 System and method for detecting a process point in multi-mode pulse processes

Country Status (7)

Country Link
US (2) US9640371B2 (en)
EP (1) EP3012855B1 (en)
JP (1) JP2016082233A (en)
KR (1) KR102623688B1 (en)
CN (2) CN110246743B (en)
SG (1) SG10201508634SA (en)
TW (1) TWI679671B (en)

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US9640371B2 (en) * 2014-10-20 2017-05-02 Lam Research Corporation System and method for detecting a process point in multi-mode pulse processes
JP6356615B2 (en) * 2015-02-06 2018-07-11 東芝メモリ株式会社 Semiconductor manufacturing apparatus and semiconductor manufacturing method
US10522429B2 (en) * 2015-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device
US20170330764A1 (en) * 2016-05-12 2017-11-16 Lam Research Corporation Methods and apparatuses for controlling transitions between continuous wave and pulsing plasmas
CN107644811B (en) * 2016-07-20 2020-05-22 中微半导体设备(上海)股份有限公司 Bosch process etching end point monitoring method and Bosch etching method
US11209478B2 (en) * 2018-04-03 2021-12-28 Applied Materials, Inc. Pulse system verification
CN110648888B (en) * 2018-06-27 2020-10-13 北京北方华创微电子装备有限公司 Radio frequency pulse matching method and device and pulse plasma generating system
US10748823B2 (en) 2018-09-27 2020-08-18 International Business Machines Corporation Embedded etch rate reference layer for enhanced etch time precision
WO2020106297A1 (en) * 2018-11-21 2020-05-28 Lam Research Corporation Method for determining cleaning endpoint
CN111238669B (en) * 2018-11-29 2022-05-13 拓荆科技股份有限公司 Temperature measuring method for semiconductor radio frequency processing device
KR20240031441A (en) * 2019-06-27 2024-03-07 램 리써치 코포레이션 Alternating etch and passivation process
JP7454971B2 (en) * 2020-03-17 2024-03-25 東京エレクトロン株式会社 Detection method and plasma processing apparatus
GB202109722D0 (en) * 2021-07-06 2021-08-18 Oxford Instruments Nanotechnology Tools Ltd Method of etching or depositing a thin film
WO2024054380A1 (en) * 2022-09-08 2024-03-14 Lam Research Corporation Multi-sensor determination of a state of semiconductor equipment

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KR20010042965A (en) * 1998-04-23 2001-05-25 샌디아 코포레이션 Method and apparatus for monitoring plasma processing operations
US6566272B2 (en) * 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
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US8257546B2 (en) * 2003-04-11 2012-09-04 Applied Materials, Inc. Method and system for monitoring an etch process
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Also Published As

Publication number Publication date
KR102623688B1 (en) 2024-01-10
CN110246743A (en) 2019-09-17
US9640371B2 (en) 2017-05-02
TWI679671B (en) 2019-12-11
EP3012855B1 (en) 2018-07-18
TW201630028A (en) 2016-08-16
CN105679688B (en) 2019-04-16
CN110246743B (en) 2022-12-20
CN105679688A (en) 2016-06-15
JP2016082233A (en) 2016-05-16
US10242849B2 (en) 2019-03-26
US20170207070A1 (en) 2017-07-20
EP3012855A1 (en) 2016-04-27
US20160111261A1 (en) 2016-04-21
KR20160046309A (en) 2016-04-28

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